• 제목/요약/키워드: bonding temperature

검색결과 1,063건 처리시간 0.025초

레이저 유리 접합 공정의 유한요소해석 (Finite Element Analysis of Laser Class Bonding Process)

  • 홍석관;강정진;변철웅
    • 한국레이저가공학회지
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    • 제11권3호
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    • pp.10-15
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    • 2008
  • This study is aimed to analyse the laser glass bonding process numerically. Due to the viscoelastic behaviour of glass, the extremely large deformation of the frit seal is resulted continuously over the transition temperature, so that the thermal boundary condition be changed in the entire calculation process. The commercial FEM algorithm is restrictively able to remesh the large geometrical boundary shape and to adapt the boundary conditions simultaneously. According to our manual adaptation of increasing the laser line intensity to 700 mW/mm, it is possible to estimate the thermal glass bonding process under the fracture stress in principle. But it should be studied further in the case of high laser line intensity.

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A-8 Three -Dimensional Crystalizing Combined $\pi$-Bonding Orbitals ("O" S' Bonding) And Electrical And Mechanical Properties of Alloy Metals

  • Oh, Hung-Kuk
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 1995년도 춘계학술대회논문집
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    • pp.90-106
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    • 1995
  • The "O"S' BONDING make metallic and non-metalic crystal structures and form localized superconducting orbitals , which induce electrical conduction , semi-conduction, and superconduction. The orbitals are proced by Ampere's law, Faraday's law , Meissner effect, highcritical temperature of thecopper oxide layers. abnomal trans-membrane signal in cancer cell and plastic deformations bytwins and dislocations, In the case of alloying metals, the most deterimentla cases of electrical conduction are those of solid solution and intermetalic compound . The highest case for the hardness are also those of solid solution and intermetallic compound. It explains the contributions of the "O"S' BONDING for conduction bands and plastic deformation by twins and dislocations.ns and dislocations.

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연강-스테인리스강의 확산접합에 관한 연구 (Study on Diffusion Bonding of Stainless Steel to Mild Steel)

  • 김승태
    • 열처리공학회지
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    • 제11권1호
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    • pp.17-26
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    • 1998
  • Cladding of stainless steel on mild steel was prepared by diffusion bonding process. The bond strength increased with an increase of bonding temperature and time. It was also found that the bond strength increased as the surface roughness decreased. After the diffusion bonding of stainless steel-mild steel, the mild steel part near the bonded interface showed higher strength than the base steel due to the migration of chromium and nickel from stainless steel to mild steel. Carbon migration from mild steel gave effect on the formation of chromium carbides at grain boundaries of stainless steel, the fractograpohic features of the imperfectly bonded interface showed rather coarse dimples in the mild steel part and very fine dimples in the stainless steel part.

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$ZrO_2$와 NiTi 합금의 반응접합 : 분석투과전자현미경을 이용한 $ZrO_2/NiTi$ 접합층 반응생성물 분석 (Reaction Bonding of $ZrO_2$ and NiTi : Reaction Products Analyses on $ZrO_2/NiTi$ Bonding Interface with AEM)

  • 김영정;김환
    • 한국세라믹학회지
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    • 제30권11호
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    • pp.949-954
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    • 1993
  • Microstructural development at the ZrO2/NiTi bonding interface and reaction products were examined and identified with SEM and AEM. Ti-oxide, Ti2Ni and Ni2Ti layer were observed whose thickness depends on bonding temperature typically. The development of Ti-oxide layer is related with oxygen ion in ZrO2 and liquid phase Ti2Ni. It is considered that compositional deviation from homogeneity and residual stress caused by thermal expansion mismatch are closely related with the formation of the Ti2Ni phase.

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SiO$_2$ 박막을 이용한 SOI 직접접합공정 및 특성 (Processing and Characterization of a Direct Bonded SOI using SiO$_2$ Thin Film)

  • 유연혁;최두진
    • 한국세라믹학회지
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    • 제36권8호
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    • pp.863-870
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    • 1999
  • SOI(silicon on insulafor) was fabricated through the direct bonding using (100) Si wafer and 4$^{\circ}$off (100) Si wafer to investigate the stacking faults in silicon at the Si/SiO2 oxidized and bonded interface. The treatment time of wafer surface using MSC-1 solution was varied in order to observe the effect of cleaning on bonding characteristics. As the MSC-1 treating time increased surface hydrophilicity was saturated and surface microroughness increased. A comparison of surface hydrophilicity and microroughness with MSC-1 treating time indicates that optimum surface modified condition for time was immersed in MSC-1 for 2 min. The SOI structure directly bonded using (100) Si wafer and 4$^{\circ}$off (100) Si wafer at the room temperature were annealed at 110$0^{\circ}C$ for 30 min. Then the stacking faults at the bonding and oxidation interface were examined after the debonding. The results show that there were anomalies in the gettering of the stacking faults at the bonded region.

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코팅층을 이용한 몰리브덴의 확산접합 (Diffusion Bonding of Mo with Coating Layer)

  • 박재현;권영각;장래웅
    • Journal of Welding and Joining
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    • 제10권3호
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    • pp.26-39
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    • 1992
  • Diffusion bonding of Mo was performed by using the metallic coating of Cu and Cr on the surface to be bonded. Joint characteristics of Mo with or without coating layer were compared in metallurgical and fractograpical aspects. The results showed that the diffusion bonding with coating layer, especially with Cu coating, increased the bending strength of joint. Variation of heating cycle(elevation of temperature for a moment) did not affect significantly the mechanical properties of joint. Fractographical analysis showed that the fracture of joint bonded with Cr coating occurred at the coating layer, while that with Cu coating occurred at the base metal.

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유리/실리콘 기판 직접 접합에서의 세정과 열처리 효과 (Effects of Wafer Cleaning and Heat Treatment in Glass/Silicon Wafer Direct Bonding)

  • 민홍석;주영창;송오성
    • 한국전기전자재료학회논문지
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    • 제15권6호
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    • pp.479-485
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    • 2002
  • We have investigated the effects of various wafers cleaning on glass/Si bonding using 4 inch Pyrex glass wafers and 4 inch silicon wafers. The various wafer cleaning methods were examined; SPM(sulfuric-peroxide mixture, $H_2SO_4:H_2O_2$ = 4 : 1, $120^{\circ}C$), RCA(company name, $NH_4OH:H_2O_2:H_2O$ = 1 : 1 : 5, $80^{\circ}C$), and combinations of those. The best room temperature bonding result was achieved when wafers were cleaned by SPM followed by RCA cleaning. The minimum increase in surface roughness measured by AFM(atomic force microscope) confirmed such results. During successive heat treatments, the bonding strength was improved with increased annealing temperatures up to $400^{\circ}C$, but debonding was observed at $450^{\circ}C$. The difference in thermal expansion coefficients between glass and Si wafer led debonding. When annealed at fixed temperatures(300 and $400^{\circ}C$), bonding strength was enhanced until 28 hours, but then decreased for further anneal. To find the cause of decrease in bonding strength in excessively long annealing time, the ion distribution at Si surface was investigated using SIMS(secondary ion mass spectrometry). tons such as sodium, which had been existed only in glass before annealing, were found at Si surface for long annealed samples. Decrease in bonding strength can be caused by the diffused sodium ions to pass the glass/si interface. Therefore, maximum bonding strength can be achieved when the cleaning procedure and the ion concentrations at interface are optimized in glass/Si wafer direct bonding.

3중 접합 공정에 의한 MEMS 공진기의 웨이퍼레벨 진공 패키징 (Wafer-level Vacuum Packaging of a MEMS Resonator using the Three-layer Bonding Technique)

  • 양충모;김희연;박종철;나예은;김태현;노길선;심갑섭;김기훈
    • 센서학회지
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    • 제29권5호
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    • pp.354-359
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    • 2020
  • The high vacuum hermetic sealing technique ensures excellent performance of MEMS resonators. For the high vacuum hermetic sealing, the customization of anodic bonding equipment was conducted for the glass/Si/glass triple-stack anodic bonding process. Figure 1 presents the schematic of the MEMS resonator with triple-stack high-vacuum anodic bonding. The anodic bonding process for vacuum sealing was performed with the chamber pressure lower than 5 × 10-6 mbar, the piston pressure of 5 kN, and the applied voltage was 1 kV. The process temperature during anodic bonding was 400 ℃. To maintain the vacuum condition of the glass cavity, a getter material, such as a titanium thin film, was deposited. The getter materials was active at the 400 ℃ during the anodic bonding process. To read out the electrical signals from the Si resonator, a vertical feed-through was applied by using through glass via (TGV) which is formed by sandblasting technique of cap glass wafer. The aluminum electrodes was conformally deposited on the via-hole structure of cap glass. The TGV process provides reliable electrical interconnection between Si resonator and aluminum electrodes on the cap glass without leakage or electrical disconnection through the TGV. The fabricated MEMS resonator with proposed vacuum packaging using three-layer anodic bonding process has resonance frequency and quality factor of about 16 kHz and more than 40,000, respectively.

저온실링용 ZnO-V2O5-P2O5계 봉착재의 물성에 미치는 TiO2 의 영향 (Effect of TiO2 on the Properties of ZnO-V2O5-P2O5 Low Temperature Sealing Glasses)

  • 이헌석;황종희;임태영;김진호;이석화;김일원;김남석;김형순
    • 한국재료학회지
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    • 제19권11호
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    • pp.613-618
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    • 2009
  • We designed new compositions for lead free and low temperature sealing glass frit of $ZnO-V_2O_5-P_2O_5$ system, which can be used for PDP (Plasma Display Panel) or other electronic devices. The $ZnO-V_2O_5-P_2O_5$ system can be used as a sealing material at temperatures even lower than 430$^{\circ}C$. This system, however, showed lower bonding strength with glass substrate compared to commercialized Pb based sealing materials. So, we added $TiO_2$ as a promoter for bonding strength. We examined the effect of $TiO_2$ addition on sealing behaviors of $ZnO-V_2O_5-P_2O_5$ glasses with the data for flow button, wetting angle, temporary & permanent residual stress of glass substrate, EPMA analysis of interface between sealing materials and glass substrate, and bonding strength. As a result, sealing characteristics of $ZnO-V_2O_5-P_2O_5$ system glasses were improved with $TiO_2$ addition, but showed a maximum value at 5 mol% $TiO_2$ addition. The reason for improved bonding characteristics was considered to be the chemical interaction between glass substrate and sealing glass, and structural densification of sealing glass itself.

저온융착 폴리에스테르사 함유 팬시사 직물의 열처리 특성 및 염색성 (Heat Processing and Dyeing Properties of Fabrics by Using Composite Fancy Yarn Containing Low Melting PET Yarn)

  • 성우경
    • 한국의류산업학회지
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    • 제14권6호
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    • pp.1024-1031
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    • 2012
  • The thermal bonding PET fabrics were produced through high temperature steaming (HTS) of low melting PET yarn as warp and composite fancy yarn containing low melting PET yarn as weft. The low melting PET yarn of sheath-core structure consisted of a regular PET in core portion and low melting PET in sheath portion. The composite fancy yarn consisted of regular PET yarn as inner part and effect part and low melting PET yarn as binding part. This study was carried out to investigate the melting behavior of thermal bonded PET fabric, the effect of HTS on the thermal bonding, mechanical properties, and dyeing properties. The melting peak of low melting PET yarn showed two melting peaks caused by sheath-core structure. Almost the entire thermal bonding of the fancy PET fabrics containing low melting PET yarn has formed at $200^{\circ}C{\times}3min$ of HTS. The tensile strength in warp and weft direction of the fancy PET fabrics slightly decreased as temperature of HTS increased. The total K/S value of the fancy PET fabrics decreased slightly to $180^{\circ}C{\times}3min$ of HTS, while increased slightly above $200^{\circ}C{\times}3min$ of HTS. The changes in the hue angle ($H^{\circ}$) of the thermal bonded fancy PET fabrics dyed with disperse dyes hardly ever happened.