• Title/Summary/Keyword: bonding temperature

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A Study on Thermosonic Bonding Process and Its Reliability Evaluation of Joints (열초음파 접합 공정과 접합부의 신뢰성 평가에 관한 연구)

  • Shin, Young-Eui;Pak, Jin-Suk;Son, Sun-Eik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.8
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    • pp.625-631
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    • 2009
  • In this thesis, lateral thermosonic bonding with ACFs was investigated as a process to make high reliability joints for FPD fabrication. Conditions for thermosonic and thermocompression bonding with ACFs were determined and used to make specimens in a driving test jig for testing of bond reliability by thermal shock. The results showed that thermosonic bonding temperature of $199\;^{\circ}C$ and bonding time of 1s produced bonds with good reliability. Additionally, thermosonic bonding temperature and time were reduced and thermal shock test results compared to this proposed curing condition. It is concluded that theromosonic bonding with ACFs can be effectively applied to reduce bonding temperature and time compared with that of thermocompression bonding.

Trasient Liquid Phase bonding for Power Semiconductor (전력반도체 패키징을 위한 Transient liquid phase 접합 기술)

  • Roh, Myong-Hoon;Nishikawa, Hiroshi;Jung, Jae Pil;Kim, Wonjoong
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.1
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    • pp.27-34
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    • 2017
  • Recently, a demand in sustainable green technologies is requiring the lead free bonding for high power module packaging due to the environmental pollution. The Transient-liquid phase (TLP) bonding can be a good alternative to a high Pb-bearing soldering. Basically, TLP bonding is known as the combination of soldering and diffusion bonding. Since the low melting temperature material is fully consumed after TLP bonding, the remelting temperature of joint layer becomes higher than the operating temperature of the power module. Also, TLP bonding is cost-effective process than metal nanopaste bonding such as Ag. In this paper, various TLP bonding techniques for power semiconductor were described.

Low Temperature Bonding Process of Silicon and Glass using Spin-on Glass (Spin-on Glass를 이용한 실리콘과 유리의 저온 접합 공정)

  • Lee Jae-Hak;Yoo Choong-Don
    • Journal of Welding and Joining
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    • v.23 no.6
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    • pp.77-86
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    • 2005
  • Low temperature bonding of the silicon and glass using the Spin-on Glass (SOG) has been conducted experimentally to figure out the effects of the SOG solution composition and process variables on bond strength using the Design of Experiment method. In order to achieve the high quality bond interface without rack, sufficient reaction time of the optimal SOG solution composition is needed along with proper pressure and annealing temperature. The shear strength under the optimal SOG solution composition and process condition was higher than that of conventional anodic bonding and similar to that of wafer direct bonding.

Process Conditions for Low Bonding Strength in Pressure Welding of Cu-Al Plates at Cold and Warm Temperatures (Cu-Al 판재의 냉간 및 온간 압접에서 낮은 접합강도를 갖는 공정 조건에 관한 연구)

  • 심경섭;이용신
    • Transactions of Materials Processing
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    • v.13 no.7
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    • pp.623-628
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    • 2004
  • This paper is concerned with pressure welding, which has been known as a main bonding mechanism during the cold and warm forming such as clad extrusion or bundle extrusion/drawing. Bonding characteristics between the Cu and Al plates by pressure welding are investigated focusing on the weak bonding. Experiments are performed at the cold and warm temperatures ranging from the room temperature to $200^{\circ}C$. The important factors examined in this work are the welding pressure, pressure holding time, surface roughness, and temperature. A bonding map, which can identify the bonding criterion with a weak bonding strength of IMPa , is proposed in terms of welding pressure and surface roughness fur the cold and warm temperature ranges.

Bonding Method and Packaging of High Temperature RFID Tag (고온용 RFID 태그 패키징 및 접합 방법)

  • Choi, Eun-Jung;Yoo, Dea-Won;Byun, Jong-Hun;Ju, Dae-Keun;Sung, Bong-Gun;Cho, Byung-Lok
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.35 no.1B
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    • pp.62-67
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    • 2010
  • Our research group has investigated that RFID tag packaging development and RFID tag flip chip bonding method influences on the industry-environmental customized RFID tag development that has applications to various industry environmental conditions. RFID tag flip chip bonding is consisting with wire bonding, ultrasonic bonding, heat plate bonding, and laser bonding and those methods are also depending on the different RFID tag development. Our research data shows that, among the various industrial environments such as an extremely high temperature, cryogenic, high-humidity, flexible, high-durable, development of RFID tag in an extremely high temperature is inappropriate for laser bonding method, converting of heat energy as absorbing light energy or heat plate bonding method of straight heat transferring manner, on the other hand, is suitable for wire bonding method which directly connect bump to pattern using wire.

Measurement of Glass-Silicon Interfacial fracture Toughness and Experimental Evaluation of Anodic Bonding Process based on the Taguchi Method (다구찌 방법에 의한 유리-실리콘 양극접합 계면의 파괴인성치 측정 및 양극접합공정 조건에 따른 접합강도 분석)

  • Kang, Tae-Goo;Cho, Young-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.6
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    • pp.1187-1193
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    • 2002
  • Anodic bonding process has been quantitatively evaluated based on the Taguchi analysis of the interfacial fracture toughness, measured at the interface of anodically bonded silicon-glass bimorphs. A new test specimen with a pre-inserted blade has been devised for interfacial fracture toughness measurement. A set of 81 different anodic bonding conditions has been generated based on the three different conditions for four different process parameters of bonding load, bonding temperature, anodic voltage and voltage supply time. Taguchi method has been used to reduce the number of experiments required for the bonding strength evaluation, thus obtaining nine independent cases out of the 81 possible combinations. The interfacial fracture toughness has been measured for the nine cases in the range of 0.03∼6.12 J/㎡. Among the four process parameters, the bonding temperature causes the most dominant influence to the bonding strength with the influence factor of 67.7%. The influence factors of other process parameters, such as anodic voltage and voltage supply time, bonding load, are evaluated as 18%, 12% and 2.3%, respectively. The maximum bonding strength of 7.23 J/㎡ has been achieved at the bonding temperature of 460$\^{C}$ with the bonding load of 45gf/㎠, the applied voltage of 600v and the voltage supply time of 25minites.

An analysis of the Wi-Ni Carbide Alloy Diffusion Bonding technique in its application for DME Engine Fuel Pump

  • Chun, Dong-Joon
    • International Journal of Advanced Culture Technology
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    • v.8 no.2
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    • pp.246-251
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    • 2020
  • Dimethyl Ether(DME) engine use a highly efficient alternative fuel having a great quantity of oxygen and has a advantage no polluting PM gas. The existing DME fuel cam material is a highly expensive carbide alloy, and it is difficult to take a price advantage. Therefore the study of replacing body area with inexpensive steel material excluding piston shoe and contact area which demands high characteristics is needed. The development of WC-Ni base carbide alloy optimal bonding composition technique was accomplished in this study. To check out the influence of bonding temperature and time, bonding characteristics of sintering temperature was experimented. The hardness of specimen and bonding rate were measured using ultrasound equipment. The bonding state of each condition was excellent, and the thickness of mid-layer, temperature and maintaining time were measured. The mid-layer thickness according to bonding temperature and maintaining time were observed with optical microscope. We analyzed the micro-structural analysis, formation of bonding specimen, wafer fabrication and fuel cam abrasion test. Throughout this study, we confirmed that the fuel cam for DME engine which demands high durability against velocity and pressure is excellent.

BONDING PHENOMENON IN TRANSIENT LIQUID PHASE BONDING OF NI BASE SUPERALLOY GTD-111

  • Kang, Chung-Yun;Kim, Dae-Up;Woo, In-Soo
    • Proceedings of the KWS Conference
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    • 2002.10a
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    • pp.798-802
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    • 2002
  • Metallurgical studies on the bonded interlayer of directionally solidified Ni-base superalloy GTD111 joints were carried out during transient liquid phase bonding. The formation mechanism of solid during solidification process was also investigated. Microstructures at the bonded interlayer of joints were characterized with bonding temperature. In the bonding process held at 1403K, liquid insert metal was eliminated by well known mechanism of isothermal solidification process and formation of the solid from the liquid at the bonded interlayer were achieved by epitaxial growth. In addition, grain boundary formed at bonded interlayer is consistent with those of base metal. However, in the bonding process held at 1453K, extensive formation of the liquid phase was found to have taken place along dendrite boundaries and grain boundaries adjacent to bonded interlayer. Liquid phases were also observed at grain boundaries far from the bonding interface. This phenomenon results in liquation of grain boundaries. With prolonged holding, liquid phases decreased gradually and changed to isolated granules, but did not disappeared after holding for 7.2ks at 1473K. This isothermal solidification occurs by diffusion of Ti to be result in liquation. In addition, grain boundaries formed at bonded interlayer were corresponded with those of base metal. In the GTD-ll1 alloy, bonding mechanism differs with bonding temperature.

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Bonding process parameter optimization of flip-chip bonder (Flip-chip 본딩 장비 제작 및 공정조건 최적화)

  • Shim H.Y.;Kang H.S.;Jeong H.;Cho Y.J.;Kim W.S.;Kang S.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.763-768
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    • 2005
  • Bare-chip packaging becomes more popular along with the miniaturization of IT components. In this paper, we have studied flip-chip process, and developed automated bonding system. Among the several bonding method, NCP bonding is chosen and batch-type equipment is manufactured. The dual optics and vision system aligns the chip with the substrate. The bonding head equipped with temperature and force controllers bonds the chip. The system can be easily modified for other bonding methods such as ACF In bonding process, the bonding forte and temperature are known as the most dominant bonding parameters. A parametric study is performed for these two parameters. For the test sample, we used standard flip-chip test kit which consists of FR4 boards and dummy flip-chips. The bonding test was performed fur two types of flip-chips with different chip size and lead pitch. The bonding temperatures are chosen between $25^{\circ}C\;to\;300^{\circ}C$. The bonding forces are chosen between 5N and 300N. The bonding strength is checked using bonding force tester. After the bonding force test, the samples are examined by microscope to determine the failure mode. The relations between the bonding strength and the bonding parameters are analyzed and compared with bonding models. Finally, the most suitable bonding condition is suggested in terms of temperature and force.

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The Temperature Dependence of the Diffusion Bonding Between Tungsten Carbides for Micro WC-PCD Tool Fabrication (초소형 초경 PCD Tool 제작을 위한 초경합금간 확산접합의 온도 의존성 연구)

  • Jeong, B.W.;Park, J.W.
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.22 no.5
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    • pp.812-817
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    • 2013
  • This study demonstrates the diffusion bonding process between a tungsten carbide shank (K30) and tungsten carbide (DX5) for micro WC-PCD tool fabrication. A type of nickel alloy was used as the filler met alto improve the bond ability between K30 and DX5. The bonding pressure, time, and surrounding conditions were kept constant. In particular, the normal pressure was controlled precisely under buckling analysis. Diffusion bonding was performed at various operation temperatures (1170-1770 K) by using a specially designed jig. The microstructure on the localized bonded surface was analyzed using scanning electron microscopy and optical microscopy. In the case of diffusion bonding of WCat 1370-1770K, the filler metal melted completely and diffused between the two base metals, and they were bonded more tightly on both sides than at temperatures below 1370 K. Our results demonstrated the importance of sensitive temperature dependence of diffusion bonding.