• Journal of dental hygiene science
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• v.14 no.1
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• pp.29-34
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• 2014

The purpose of this study was to evaluate the influence of low temperature degradation (LTD) on the bonding strength of yttria-stabilized tetragonal zirconia polycrystal (Y-TZP). The push-shear bond test method was used to investigate the core-veneer bonding strength of industrially manufactured Y-TZP core ceramic and manufacturer recommended veneering ceramic. Four groups from ceramic-zirconia specimens (n=28; n=7 per group) were assigned into four experimental aging conditions, namely storage in an autoclave at $134^{\circ}C$ for 0, 3, 5, 10 hours. Bonding strength was obtained using a universal testing machine with crosshead speed 0.5 mm/min. Data were statistically analyzed using one-way ANOVA and Tukey's test (${\alpha}=0.05$). In bonding strength test, the group which was treated with LTD showed lower bonding strength than no treated group. The ceramic-zirconia bonding strength was affected by LTD (p<0.05). Digital microscope examination of the fracture surface showed mixed failures with adhesive and cohesive types in LTD with treated Y-TZP groups.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.15-20
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• 2012

In electronics industry, the coming electronic devices will be expected to be high integration and convergence electronics. And also, it will be expected that the coming electronics will be flexible, bendable and wearable electronics. Therefore, the demands and interests of bonding technology between flexible substrate and chip for mobile electronics, e-paper etc. have been increased because of weight and flexibility of flexible substrate. Considering fine pitch for high density and thermal damage of flexible substrate during bonding process, the micro solder bump technology for high density and low temperature bonding process for reducing thermal damage will be required. In this study, we researched on bonding technology of chip and flexible substrate by using 25um Cu pillar bumps and Sn-Bi solder bumps were formed by electroplating. From the our study, we suggest technology on Cu pillar bump formation, Sn-Bi solder bump formation, and bonding process of chip and flexible substrate for the coming electronics.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1946-1949
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• 1996

We have performed silicon-to-silicon anodic bonding using glass layer deposited by electron beam evaporation. Wafers can be bonded at $135^{\circ}C$ with an applied voltage of $35V_{DC}$, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that the evaporated glass layer more than $1\;{\mu}$ m thick was suitable for anodic bonding. The role of sodium ions for anodic bonding was also investigated by theoretical bonding mechanism and experimental inspection.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1943-1945
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• 1996

In this paper, we developed a modified direct bonding method for the application of vacuum devices. By the proposed method, we successfully bonded the following materials: Si-Si, Si-$SiO_2$-Si, glass-Si, and glass-$SiO_2$-Si. In our experiments, we used corning #7070 wafer type glass and (100) or (110) single crystalline silicon wafers. In order to enhance the initial bonding strength we contacted the materials to be bonded as D. I. water wetted on the surfaces and evaporated the water under the room temperature and atmosphere environment. Finally we realized the glass bonding by simple direct bonding method which has been performed by electrostatic bonding method until now.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.138-140
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• 2001

Fluxless flip chip bonding using plasma & ultrasonic wave was investigated in order to evaluate the effect of plasma & ultrasonic treatment on the bondability of the Sn-3.5wt%Ag solder bumped die to TSM-coated glass substrate. The $Ar+10%H_2plasma$ was effective in removing tin oxide on solder surface. The die shear strength of the plasma-treated Si-chip is higher than that of non-treated specimen but lower than that of specimen bonded with flux. The die shear strength with the bonding load at 25W ultrasonic power increased to 0.8N/bump for all bonding temperature but decreased above 1.0N/bump.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.2
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• pp.106-111
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• 2007

In this research work attempts were made to study the bonding of thermo-plastics with adhesives using solar radiation. In order to study the curing behaviour necessary experiments were conducted under varying conditions of temperature, exposure time and power of solar energy. The cured samples were then studied under the optical microscope before subjecting to tensile testing in order to study their mechanical properties of thermo-plastics. The fracture surfaces were further studied under the Scanning Electron Microscopy(SEM) in order to research the microstructural changes that are taken place during curing. In order to measure the performance of solar energy cured joints the parameters such as; bond strength, surface morphology, the microstructual changes, variation in properties of adhesives bonded joints are compared to that of specimen cured at ambient conditions and specimen cured using microwave techniques.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1594-1597
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• 2008

Carbon nanotube (CNT) cathodes were fabricated using nano-sized silver powders as a bonding material. The effects of powder size on the field emission properties for the CNT cathode were investigated The better emission properties of CNT cathodes using smaller particles are due to a low sintering temperature of the bonding materials.

• Laser Solutions
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• v.11 no.3
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• pp.10-15
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• 2008

This study is aimed to analyse the laser glass bonding process numerically. Due to the viscoelastic behaviour of glass, the extremely large deformation of the frit seal is resulted continuously over the transition temperature, so that the thermal boundary condition be changed in the entire calculation process. The commercial FEM algorithm is restrictively able to remesh the large geometrical boundary shape and to adapt the boundary conditions simultaneously. According to our manual adaptation of increasing the laser line intensity to 700 mW/mm, it is possible to estimate the thermal glass bonding process under the fracture stress in principle. But it should be studied further in the case of high laser line intensity.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1995.03a
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• pp.90-106
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• 1995

The "O"S' BONDING make metallic and non-metalic crystal structures and form localized superconducting orbitals , which induce electrical conduction , semi-conduction, and superconduction. The orbitals are proced by Ampere's law, Faraday's law , Meissner effect, highcritical temperature of thecopper oxide layers. abnomal trans-membrane signal in cancer cell and plastic deformations bytwins and dislocations, In the case of alloying metals, the most deterimentla cases of electrical conduction are those of solid solution and intermetalic compound . The highest case for the hardness are also those of solid solution and intermetallic compound. It explains the contributions of the "O"S' BONDING for conduction bands and plastic deformation by twins and dislocations.ns and dislocations.

• Journal of the Korean Society for Heat Treatment
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• v.11 no.1
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• pp.17-26
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• 1998

Cladding of stainless steel on mild steel was prepared by diffusion bonding process. The bond strength increased with an increase of bonding temperature and time. It was also found that the bond strength increased as the surface roughness decreased. After the diffusion bonding of stainless steel-mild steel, the mild steel part near the bonded interface showed higher strength than the base steel due to the migration of chromium and nickel from stainless steel to mild steel. Carbon migration from mild steel gave effect on the formation of chromium carbides at grain boundaries of stainless steel, the fractograpohic features of the imperfectly bonded interface showed rather coarse dimples in the mild steel part and very fine dimples in the stainless steel part.