• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09a
• /
• pp.306-307
• /
• 2006

The sinter-bonding behavior of iron based powder mixtures was investigated. To produce the green compacts to be joined the following powders based on $H{\ddot{o}}gan{\ddot{a}}s$ AB grade NC 100.24 plain iron powder were used: NC 100.24 as delivered, PNC 30, PNC 60 and NC 100.24 + 4%Cu powder mixtures. Dimensional behaviour of all those materials during the sintering cycle was monitored by dilatometry. Simple ring shaped specimens as the outer parts and cylindrical as the inner parts were pressed. The influence of parts' composition on joining strength was established. Diffusion of alloying elements: copper and phosphorous, across the bonding surface was controlled by metallography, SEM and microanalysis.

• Journal of the Semiconductor & Display Technology
• /
• v.23 no.2
• /
• pp.135-142
• /
• 2024

Cu-Cu bonding, one of the key technologies in advanced packaging, enhances semiconductor chip performance, miniaturization, and energy efficiency by facilitating rapid data transfer and low power consumption. However, the quality of the interface bonding can significantly impact overall bond quality, necessitating strategies to quickly detect and classify in-process defects. This study presents a methodology for detecting defects in wafer junction areas from Scanning Acoustic Microscopy images using a ResNet-50 based deep learning model. Additionally, the use of the defect map is proposed to rapidly inspect and categorize defects occurring during the Cu-Cu bonding process, thereby improving yield and productivity in semiconductor manufacturing.

• Journal of Sensor Science and Technology
• /
• v.9 no.2
• /
• pp.134-140
• /
• 2000

Si wafer direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electronic devices and MEMS applications. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration and applied pressure. The bonding strength was evaluated by tensile strength method. A bond characteristic on the interface was analyzed by using FT-IR, and surface roughness according to HF concentration was analyzed by AFM. Si-F bonds on Si surface after HF pre-treatment are replaced by Si-OH during a DI water rinse. Consequently, hydrophobic wafer was bonded by hydrogen bonding of Si-OH$\cdots$(HOH$\cdots$HOH$\cdots$HOH)$\cdots$OH-Si. The pre-bonding strength depends on the HF pre-treatment condition before pre-bonding. (Min : $2.4kgf/cm^2{\sim}$Max : $14.9kgf/cm^2$)

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.15 no.4
• /
• pp.1879-1884
• /
• 2014

Recently, the micro bonding technology comes into the spotlight as the miniaturization of the electronic product. The micro bonding technique can classify by way of laser welding and ultrasonic bonding and etc. However, the research on the micro bonding is much lacks. In this paper, carried out the cooling analysis of the 60 [kHz] ultrasonic bonding equipment to know heat effect of the piezoelectric element when the ultrasonic bonding equipment was operated. The ultrasonic horn having the natural frequency with 60 [kHz] for the dissimilar material bonding of the glass and solder tried to be designed. The parameters and response was set through the basic experiment. The dissimilar material bonding strength analysis using the 60 [kHz] ultrasonic bonding equipment was done. We carried out the bonding for improving bonding strength to using the silver paste. air thightness of bonding surface was confirmed by analysis of bonding interfaces.

• Laser Solutions
• /
• v.11 no.3
• /
• pp.10-15
• /
• 2008

This study is aimed to analyse the laser glass bonding process numerically. Due to the viscoelastic behaviour of glass, the extremely large deformation of the frit seal is resulted continuously over the transition temperature, so that the thermal boundary condition be changed in the entire calculation process. The commercial FEM algorithm is restrictively able to remesh the large geometrical boundary shape and to adapt the boundary conditions simultaneously. According to our manual adaptation of increasing the laser line intensity to 700 mW/mm, it is possible to estimate the thermal glass bonding process under the fracture stress in principle. But it should be studied further in the case of high laser line intensity.

• Journal of the Semiconductor & Display Technology
• /
• v.16 no.1
• /
• pp.29-33
• /
• 2017

This paper presents a development of vision aligner with three channels for the wafer and plate bonding machine in manufacturing of LED. The developed vision aligner consists of three cameras and performs wafer alignment of rotation and translation, flipped wafer detection, and UV Tape detection on the target wafer and plate. Normally the process step of wafer bonding is not defined by standards in semiconductor's manufacturing which steps are used depends on the wafer types so, a lot of processing steps has many unexpected problems by the workers and environment of manufacturing such as the above mentioned. For the mass production, the machine operation related to production time and worker's safety so the operation process should be operated at one time with considering of unexpected problem. The developed system solved the 4 kinds of unexpected problems and it will apply on the massproduction environment.

• Journal of Welding and Joining
• /
• v.23 no.2
• /
• pp.52-58
• /
• 2005

This study was carried out to investigate the effect of bonding temperature and heating rate on transient liquid phase diffusion bonding of Ni-base superalloy. The heating rate was varied by $0.1^{\circ}C$/sec, $1^{\circ}C$/sec, $10^{\circ}C$/sec to the bonding temperatures $1100^{\circ}C,\;1150^{\circ}C,\;1200^{\circ}C$ under vacuum. As bonding temperature increased, maximum dissolution width of base metal increased, but a dissolution finishing time decreased. The eutectic width of insert metal in the bonded interlayer decreased linearly in proportion to the square root of holding time during isothermal solidification stage. The bonding temperature was raised, isothermal solidification rate slightly increased. As the heating rate decreased and the bonding temperature increased, the completion time of dissolution after reaching bonding temperature decreased. When the heating rate was very slow, the solidification proceeded before reaching bonding temperature and the time required for the completion of isothermal solidification became reduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.387-390
• /
• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.1
• /
• pp.7-13
• /
• 2013

3D stacked IC is one of the promising candidates which can keep Moore's law valid for next decades. IC can be stacked through various bonding technologies and they were reviewed in this report, for example, wafer direct bonding and atomic diffusion bonding, etc. As an effort to reduce the high temperature and pressure which were required for high bonding strength in conventional Cu-Cu thermo-compression bonding, surface activated bonding, solid liquid inter-diffusion and direct bonding interface technologies are actively being developed.

• Journal of the Microelectronics and Packaging Society
• /
• v.22 no.4
• /
• pp.15-23
• /
• 2015

Lead-free bonding has attracted significant attention for automotive power device packaging due to the upcoming environmental regulations. Silver (Ag) is one of the prime candidates for alternative of high Pb soldering owing to its superior electrical and thermal conductivity, low temperature sinterability, and high melting temperature after bonding. In this paper, the bonding technology by Ag paste was introduced. We classified into two Ag paste bonding according to applied pressure, and each bonding described in detail including recent studies.