• Journal of the korean academy of Pediatric Dentistry
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• v.23 no.2
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• pp.450-460
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• 1996

The purpose of this study was to compare shear bond strength of composite resin using several dentin bonding agents and light cured glass ionomer cement(Fuji II LC). 40 Bovine primary anterior teeth were used for this experiment. Labial surface of teeth were flattened. It were divided into four groups. Each group was composed of 10 teeth. The material used for this experiment were Scotchbond Multipurpose-Z-100, Allbond 2-Aelitefil, Gluma-Pekalux, light cured glass ionomer cement(Fuji II LC). Each of the materials was applied to the exposed surfaces of 10 teeth by insertion into a cylindrical shaped matrix which is 3mm diameter and 3mm in height. The completed specimens were stored at $37^{\circ}C$ under 100% humidity for 24 hours : the shear bond strength of each material to dentin surface were measured with INSTRON universal testing machine. The results were as follows : 1. Shear bond strength to dentin surface increased in order of light cured glass ionomer cement(Fuji II LC), Gluma, Allbond 2, Scotchbond Multipurpose. 2. Between shear bond strength of light cured glass ionomer cement(Fuji II LC) and Allbond 2, there was statistical significace(p<0.05) 3. Between shear bond strength of light cured glass ionomer cement(Fuji II LC) and Scotchbond Multipurpose, between shear bond strength of Gluma and Scotchbond Multipurpose, there was statistical significance.(p<0.01) The shear bond strength of dentin bonding agents were higher than light cured glass ionomer cement. The reason is that materials and quality of dentin bonding agent were enhanced. Further investigation is necessary to improve shear bond strength of light cured glass ionomer cement.

• Restorative Dentistry and Endodontics
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• v.20 no.2
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• pp.487-507
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• 1995

Composite resin repair requires strong bond strength between the new and old materials. The objective of the current study was to identify the optimal treatments for sufficient bond strengths. Bondings between same kinds of materials and cross bondings using chemical curing composites and light curing composites were tested. Surface treatments included the methods of sand-blasting, acid etching and coating of bonding agent. Seven kinds cases of combinations from three kinds of methods were experimented and compared with a control group of which surfaces were highly polished. Measurements of shear bond strength and observations of surface morphologic changes using a scanning electron microscope were done. Following conclusions were drawn : 1. The highest bond strength among composite resins were exhibited by the treatment of the sand-blasting and the coating of bonding agent. 2. Acid etched surfaces showed the lowest bond strength. Bond strengths obtained from experimental groups including acid etching were lower than those obtained from same kinds of experimental groups without acid etching. 3. Simple method of the coating of bonding agent produced the slightly increased bond strength on chemical curing composite and reduced bond strength on light curing composite. 4. Bonding surfaces of chemical curing composite resin showed slightly higher bond strengths than light curing composite resin, however significant differences were not confirmed statistically. 5. More significant irregular surfaces were created by sand-blasting method than acid etching method. 6. A principal component of fillers of both resins was silicon. Acid etching method produced the seperations and degradations of fillers, these were significant on light curing composite resins which containing barium fillers.

• Korean Journal of Metals and Materials
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• v.47 no.1
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• pp.26-31
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• 2009

The effects of $Ar/O_2$ ion-beam pre-treatment conditions on the interfacial adhesion energy of sputterdeposited Cu thin film to FR-4 substrate were systematically investigated in order to understand the interfacial bonding mechanism for practical application to advanced chip-in-substrate package systems. Measured peel strength increases from $45.8{\pm}5.7g/mm$ to $61.3{\pm}2.4g/mm$ by $Ar/O_2$ ion-beam pre-treatment with anode voltage of 64 V. Interfacial bonding mechanism between sputter-deposited Cu film and FR-4 substrate seems to be dominated by chemical bonding effect rather than mechanical interlocking effect. It is found that chemical bonding intensity between carbon and oxygen at FR-4 surface increases due to $Ar/O_2$ ion-beam pretreatment, which seems to be related to the strong adhesion energy between sputter-deposited Cu film and FR-4 substrate.

• Restorative Dentistry and Endodontics
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• v.20 no.1
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• pp.97-112
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• 1995

The purpose of this study was to evaluate the effect of wetting condition made by drying time on bonding of resin cement to dentin. Freshly extracted bovine teeth were grinded to expose flat dentin surfaces. After the exposed dentin surfaces were treated with pretreatment agents and water rinse, each wetting condition of dentin surfaces was made according to drying times and methods including slight blow bry for I-second by air syringe, blow dry for 20-second by air syringe, and 12-hour dry in desiccator respectively. and then, previously made composite resin specimens were bonded onto each conditioned dentin surface of the specimen using Panavia-21(Kuraray Co.), Bistite(Tokuso Co.), and Choice(use with All bond-2, Bisco Inc.) resin cement according as manufacturer's instruction. Bonded specimens were stored in $37^{\circ}C$ distilled water for 24 hours, then the tensile bond strength was measured, cohesive failure rate was calculated, and fractured dentin surfaces and acrylic rod sides were examined under scanning electron microscope. The result were as follows ; In the group of bonding with Panavia-21 resin cement, higher tensile bond strength was seen in 12-hour dry group than in I-second and 20-second dry group(p<0.01). In the group of bonding with Bistite resin cement, higher tensile bond strength was seen in 1-second dry group than in 20-second and 12-hour dry group(p<0.01). In the group of bonding with Choice resin cement, no significant differences of bond strength under given drying time were seen. Cohesive failure rates derived from the groups of bonding with Panavia-21 and Choice resin cement were increased with the increase of tensile bond strength in each drying time. On SEM examination of fractured surface, adhesive failure mode with fractured resin tags was mostly seen in wet condition with I-second drying time in the group of bonding with Panavia-21 resin cement, mixed failure mode with shortened and fractured resin tag was seen in the group of bonding with Bistite resin cement, and regardless of drying time, and cohesive-adhesive mixed failure mode with fracture of 'Hollow' typed resin tags was mainly seen in the group of bonding with Choice resin cement.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.138-140
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• 2001

Fluxless flip chip bonding using plasma & ultrasonic wave was investigated in order to evaluate the effect of plasma & ultrasonic treatment on the bondability of the Sn-3.5wt%Ag solder bumped die to TSM-coated glass substrate. The $Ar+10%H_2plasma$ was effective in removing tin oxide on solder surface. The die shear strength of the plasma-treated Si-chip is higher than that of non-treated specimen but lower than that of specimen bonded with flux. The die shear strength with the bonding load at 25W ultrasonic power increased to 0.8N/bump for all bonding temperature but decreased above 1.0N/bump.

• Journal of Advanced Marine Engineering and Technology
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• v.24 no.1
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• pp.59-66
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• 2000

To investigate the optimum brazing condition, variation of bonded structure and mechanical properties of novel brazed pure Al with bonding condition (brazing temperature, time and Si/flux ratio) was studied. A basic study of the bonding mechanism was also examined. The optimum brazing condition was obtained at $590^{\circ}$ for 2 minutes and the bonded structure showed that it is composed of almost entirely eutectic Al-Si with near eutectic composition. At higher brazing temperature $630^{\circ}$, hypoeutectic Al-Si structure was observed in the bonded area and resulted in erosion of base metal. The thickness of eutectic layer formed in optimum brazing temperature increased linearly with the square root of time, showing a general diffusion controlled process. The ultimate tensile strength of bonded joint brazed at an optimum brazing condition was about 60% of base metal and its fracture surface showed a brittle mode.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.2
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• pp.106-111
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• 2007

In this research work attempts were made to study the bonding of thermo-plastics with adhesives using solar radiation. In order to study the curing behaviour necessary experiments were conducted under varying conditions of temperature, exposure time and power of solar energy. The cured samples were then studied under the optical microscope before subjecting to tensile testing in order to study their mechanical properties of thermo-plastics. The fracture surfaces were further studied under the Scanning Electron Microscopy(SEM) in order to research the microstructural changes that are taken place during curing. In order to measure the performance of solar energy cured joints the parameters such as; bond strength, surface morphology, the microstructual changes, variation in properties of adhesives bonded joints are compared to that of specimen cured at ambient conditions and specimen cured using microwave techniques.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.1 s.256
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• pp.113-120
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• 2007

Design optimization of layered plates bonding process is conducted by considering uncertainties in a manufacturing process, in order to reduce the crack failure arising due to the residual stress at the surface of the adherent which is caused by different thermal expansion coefficients. Robust optimization is peformed to minimize the mean as well as its variance of the residual stress, while constraining the distortion as well as the instantaneous maximum stress under the allowable reliability limits. In this optimization, the dimension reduction (DR) method is employed to quantify the reliability such as mean and variance of the layered plate bonding. It is expected that the DR method benefits the optimization from the perspectives of efficiency, accuracy, and simplicity. The obtained robust optimal solution is verified by the Monte Carlo simulation.

• Journal of Welding and Joining
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• v.20 no.4
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• pp.498-504
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• 2002

Fluxless flip chip bonding process using plasma treatment instead of flux was investigated. The effect of plasma process parameters on tin-oxide etching characteristics were estimated with Auger depth profile analysis. The die shear test was performed to evaluate the adhesion strength of the flip chip bonded after plasma treatment. The thickness of oxide layer on tin surface was reduced after Ar+H2 plasma treatment. The addition of H2 improved the oxide etching characteristics by plasma. The die shear strength of the plasma-treated Sn-Pb solder flip chip was higher than that of non-treated one but lower than that of fluxed one. The difference of the strength between plasma-treated specimen and non-treated one increased with increase in bonding temperature. The plasma-treated flip chip fractured at solder/TSM interface at low bonding temperature while the fracture occurred at solder/UBM interface at higher bonding temperature.