• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.31-38
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• 2015

In order to achieve a high speed and high quality silicon wafer bonding, the room-temperature direct bonding using atmospheric pressure plasma and sprayed water vapor was developed. Effects of different plasma fabrication parameters, such as flow rate of $N_2$ gas, flow rate of CDA (clear dry air), gap between the plasma head and wafer surface, and plasma applied voltage, on plasma activation were investigated using the measurements of the contact angle. Influences of the annealing temperature and the annealing time on bonding strength were also investigated. The bonding strength of the bonded wafers was measured using a crack opening method. The optimized condition for the highest bonding strength was an annealing temperature of $400^{\circ}C$ and an annealing time of 2 hours. For the plasma activation conditions, the highest bonding strength was achieved at the plasma scan speed of 30 mm/sec and the number of plasma treatment of 4 times. After optimization of the plasma activation conditions and annealing conditions, the direct bonding of the silicon wafers was performed. The infrared transmission image and the cross sectional image of bonded interface indicated that there is no void and defects on the bonded wafers. The bonded wafer exhibited a bonding strength of average $2.3J/m^2$.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.150-154
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• 2003

Amorphous carbon nitride films were deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition technique (PECVD) using $CH_4$and $N_2$as reaction gases. The growth and film properties were investigated while the gas ratio and the working pressure were changed systematically. At 1 Torr working pressure, an increase in the $N_2$partial pressure results in a significant increase of the deposition rate as well as an apparent presence of C ≡N bonding, while little affecting the microstructure and amorphus nature of the films. In the case of changing the working pressure at a fixed $N_2$partial pressure of 98%, a film grown at a medium pressure of $1${\times}$10^{-2}$ Torr shows the most prominent C=N bonding nature and photoluminescent property.

• Journal of Advanced Marine Engineering and Technology
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• v.25 no.5
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• pp.1140-1147
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• 2001

This paper describes the effect of various molding pressure for Mode I. Mode II interlaminar fracture toughness of carbon fiber reinforced plastic composites by using double cantilever beam(DCB), end notched flexure(ENF) and end loaded split(ELS) Specimen. The value of $G_{IC}$, $G_{IIC}$ as a function of various molding pressure is almost same at 307, 431, 585 kPa, however it shows highest value under 307kPa molding pressure, The SEM photographs show good fiber distribution and interfacial bonding of composites when the molding pressure is the 307kPa.

• Journal of the Korean Society of Industry Convergence
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• v.12 no.4
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• pp.215-219
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• 2009

A packaging technology based on flip-chip bonding and Pb-free solder for silicon pressure sensors on printed circuit board (PCB) is presented. First, the bump formation process was conducted by Pb-free solder. Ag-Sn-Cu solder and the pressed-screen printing method were used to fabricate solder bumps. The fabricated solder bumps had $189-223{\mu}m$ width, $120-160{\mu}m$ thickness, and 5.4-6.9 standard deviation. Also, shear tests was conducted to measure the bump shear strength by a Dage 2400 PC shear tester; the average shear strength was 74 g at 0.125 mm/s of test speed and $5{\mu}m$ shear height. Then, silicon pressure sensor packaging was implemented using the Pb-free solder and bump formation process. The characteristics of the pressure sensor were analogous to the results obtained when the pressure sensor dice are assembled and packaged using the standard wire-bonding technique.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.10
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• pp.857-863
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• 2014

In this work, we introduce various bonding technologies for 3D package and suggest Insert-Bump bonding (ISB) process newly to stack multi-layer chips successively. Microstructure of Insert-Bump bonding (ISB) specimens is investigated with respect to bonding parameters. Through experiments, we study on find optimal bonding conditions such as bonding temperature and bonding pressure and also evaluate in the case of fluxing and no-fluxing condition. Although no-fluxing bonding process is applied to ISB bonding process, good bonding interface at $270^{\circ}C$ is formed due to the effect of oxide layer breakage.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.15-23
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• 2015

Lead-free bonding has attracted significant attention for automotive power device packaging due to the upcoming environmental regulations. Silver (Ag) is one of the prime candidates for alternative of high Pb soldering owing to its superior electrical and thermal conductivity, low temperature sinterability, and high melting temperature after bonding. In this paper, the bonding technology by Ag paste was introduced. We classified into two Ag paste bonding according to applied pressure, and each bonding described in detail including recent studies.

• Laser Solutions
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• v.8 no.3
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• pp.21-26
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• 2005

A bonding process between tape-carrier package and a glass panel with anisotropic conductive film (ACF) has been investigated by making use of high power diode laser as a heat source for cure. The results from modeling of process and from optical properties of layers showed that heat absorbed from polyimide film surface and ACF layer is dominant source of curing during laser illumination. Laser ACF bonding has better bonding quality than conventional bonding in view of peel strength, flatness, pressure unbalance and processing time. New ACF bonding processes by making use of high power diode laser are proposed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.164-167
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS applications because of its application possibility in harsh environments. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The 3C-SiC epitaxial films grown on Si(100) were characterized by AFM and XPS, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/$\textrm{cm}^2$∼Max : 15.5 kgf/$\textrm{cm}^2$).

• Journal of Welding and Joining
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• v.23 no.6
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• pp.77-86
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• 2005

Low temperature bonding of the silicon and glass using the Spin-on Glass (SOG) has been conducted experimentally to figure out the effects of the SOG solution composition and process variables on bond strength using the Design of Experiment method. In order to achieve the high quality bond interface without rack, sufficient reaction time of the optimal SOG solution composition is needed along with proper pressure and annealing temperature. The shear strength under the optimal SOG solution composition and process condition was higher than that of conventional anodic bonding and similar to that of wafer direct bonding.

• Journal of the Korean Society of Industry Convergence
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• v.24 no.4_2
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• pp.509-515
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• 2021

In this study, a pressure vessel for a heat pipe was fabricated by bonding a metal thin film using a polymer compound sheet. In order to confirm the applicability of the experimentally manufactured copper material thin heat pipe of 0.6 mm or less, the pressure resistance and effective thermal conductivity for pressure generated according to the type of the working fluid of the heat pipe were evaluated to suggest the commercialization potential of the thin heat pipe. As a result of evaluating the pressure resistance and effective thermal conductivity performance of the thin heat pipe, the following conclusions were drawn. 1) Using a PEEK-based polymer compound sheet, it was possible to fabricate a pressure vessel for a thin heat pipe with a pressure resistance of up to 1.0 MPa by bonding a copper thin film, and the possibility of commercialization was confirmed at a temperature below 120 ℃. 2) In the case of the effective thermal conductivity performance evaluation test, the effective thermal conductivity of ethanol was higher than that of FC72 and Novec7000, and in the case of ethanol, the maximum effective thermal conductivity was 2,851 W/mK at 3.0 W of heating.