• 연구논문집
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• 통권28호
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• pp.219-227
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• 1998

In order to investigate the interfacial structure between TiN and iron nitride, an AISI 4140 steel was nitrided to form a layer of thickness 15$\mum$ by DC ion nitriding, then the surface was bombarded with Ti ions and subsequently coated a TiN film of 5$\mum$ by arc ion plating method. The interfacial microstructure between TiN and iron nitride was characterized by optical microscope, SEM and XRD. So called black layer was observed in the duplex treatment. It was resulted from the decomposition of iron nitride during the bombardment. Its thickness was increased with increasing bombardment time at high bias voltage. But the thickness was greatly decreased when the iron nitride was bombarded with a nitrogen gas or at a reduced bias voltage. The adhesion strength of the top TiN coating was decreased with increasing thickness of the black layer. Furthermore, the reduced adhesion strength in this system was discussed in view of the interfacial structural relationship between TiN and iron nitride.

• 한국초전도ㆍ저온공학회논문지
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• 제14권1호
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• pp.1-3
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• 2012

LMO($LaMnO_3$) buffer layer of superconducting coated conductor was deposited on IBAD-MgO template in the plasma atmosphere at $650^{\circ}C$ which is relatively low compared with conventional deposition temperature of more than $800^{\circ}C$. Deposition method of LMO was DC sputtering, and target and deposition chamber were connected to the cathode and anode respectively. When DC voltage was applied between target and chamber, plasma was formed on the surface of target. The tape substrate was located with the distance of 10 cm between target and tape substrate. When anode bias was connected to the tape substrate, electrons were attracted from plasma in target surface to the tape substrate, and only tape substrate was heated by electron bombardment without heating any other zone. The effect of electron bombardment on the surface of substrate was investigated by increasing bias voltage to the substrate. We found out that the sample of electron bombardment had the effect of surface heating and had good texturing at low controlling temperature.

• 한국표면공학회지
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• 제43권2호
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• pp.80-85
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• 2010

The surfaces of WC-Co and SCM415 were etched to form a micro size protrusion for oil based ultra low friction applications using an ion bombardment process in a filtered vacuum arc plasma. WC-Co species showed that a self-patterned surface was available by the ion bombarding process due to the difference of sputtering yield of WC and Co. And the increasing rate of roughness was 0.6 nm/min at -600 V substrate bias voltage. The increasing rate of roughness of SCM415 species was 1.5 nm/min at -800 V, but the selfpatterning effect as shown in WC-Co was not appeared. When the SCM415 species pretreated by electrical discharge machining is etched, the increasing rate of roughness increased from 1.5 nm/min to 40 nm/min at -800 V substrate bias voltage and the uniform surface treatment was available.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.356-356
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• 2007

Plasma immersion ion beam deposition (PIIBD) technique is a cost-effective process for the deposition of diamond like carbon thin film, the possible solid lubricant on large surface and a complex shape. We used PIIB process for the preparation of DLC thin film on $Al_2O_3$ with deposition conditions of deposition temperature range $200^{\circ}C$, working gas pressure of 1.310-1Pa. DLC thin films were coated by $C_2H_2$ ion beam deposition on $Al_2O_3$ after the ion bombardment of SiH4 as the bonding layer. Energetic bombardment of $C_2H_2$ ions during the DLC deposition to ceramic materials generated mixed layers at the DLC-Si interface which enhanced the interface to be highly bonded. Wear test showed that the low coefficient of friction of around 0.05 with normal load 2.9N and proved the advantage of the low energy ion bombardment in PIIBD process which improved the tribological properties of DLC thin film coated alumina ceramic. Furthermore, PIIBD was recognized as a useful surface modification technique for the deposition of DLC thin film on the irregular shape components, such as molds, and for the improvement of wear and adhesion problems of the DLC thin film, high temperature solid lubricant.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.95.1-95.1
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• 2010

Transparent conducting ZnO films were deposited to apply DSSC Substrate on glass substrates at $500^{\circ}C$ by ionbeam-assisted deposition. Crystallinity, microstructure, surface roughness, chemical composition, electrical and optical properties of the films were investigated as a function of deposition parameters such as ion energy, and substrate temperature. The microstructure of the polycrystalline ZnO films on the glass substrate were closely related to the oxygen ion energy, arrival ratio of oxygen to Zinc Ion bombarded on the growing surface. The main effect of energetic ion bombardment on the growing surface of the film may be divided into two categories; 1) the enhancement of adatom mobility at low energetic ion bombardment and 2) the surface damage by radiation damage at high energetic ion bombardment. The domain structure was obtained in the films deposited at 300 eV. With increasing the ion energy to 600 eV, the domain structure was changed into the grain structure. In case of the low energy ion bombardment of 300 eV, the microstructure of the film was changed from the grain structure to the domain structure with increasing arrival ratio. At the high energy ion bombardment of 600 eV, however, the only grain structure was observed. The electrical properties of the deposited films were significantly related to the change of microstructure. The films with the domain structure had larger carrier concentration and mobility than those with the grain structure, because the grain boundary scattering was reduced in the large size domains compared with the small size grains. The optical transmittance of ZnO films was dependent on a surface roughness. The ZnO films with small surface roughness, represented high transmittance in the visible range because of a decreased light surface scattering. By varying the ion energy and arrival ratio, the resistivity and optical transmittance of the films were varied from $1.1{\times}10^{-4}$ to $2.3{\times}10^{-2}{\Omega}cm$ and from 80 to 87%, respectively. The ZnO film deposited at 300 eV, and substrate temperature of $500^{\circ}C$ had the resistivity of $1.1{\times}10^{-4}{\Omega}cm$ and optical transmittance of 85% in visible range. As a result of experiments, we provides a suggestition that ZnO thin Films can be effectively used as the DSSC substrate Materials.

• 한국재료학회지
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• 제4권1호
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• pp.9-23
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• 1994

Multitarget bias cosputter deposition(MBCD)에 의해 저온($200^{\circ}C$)에서 NaCI(100)상에 정합$CoSi_2$를 성장시켰다. X-선회절과 투과전자현미경에 의해 증착온도와 기판 bias전압에 따른 각각 silicide의 상전이와 결정성을 관찰하였다. Metal induced crystallization(MIC) 과 self bias 효과에 의해 $200^{\circ}C$에서 기판전압을 인가하지 않은 경우에도 결정질 Si이 성장하였다. MIC현상을 이론 및 실험적으로 고찰하였다. 관찰된 상전이는 $Co_2Si \to CoSi \to Cosi_2$로서 유효생성열법칙에 의해 예측된 상전이와 일치하였다. 기판 bias전압 인가시 발생한 이온충돌에 의한 충돌연쇄혼합(collisional cascade mixing), 성장박막 표면의 in situ cleaning, 핵생성처(nucleation site)이 증가로 인하여 상전이, CoSi(111)우선방위, 결정성은 증착온도에 비해 기판bias전압에 더 큰 영향을 받았다. $200^{\circ}C$에서 기판 bias전압을 증가시킴에 따라 이온충돌에 의한 결정입성장이 관찰되었으며, 이를 이온충독파괴(ion bombardment dissociation)모델에 의해 해석하였다. $200^{\circ}C$에서의 기판 bias전압증가에 따른 결정성변화를 정량적으로 고찰하기 위해 Langmuir탐침을 이용하여 $E_{Ar},\; \alpha(V_s)$를 계산하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1993년도 제4회 학술발표회 논문개요집
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• pp.81-81
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• 1993

• Bulletin of the Korean Chemical Society
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• 제17권7호
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• pp.575-577
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• 1996

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.229-229
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• 2012

Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

• 대한화학회지
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• 제42권3호
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• pp.297-301
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• 1998

올리고당의 구조중 연결위치(linkage position)는 충돌 탄뎀 질량분석법(FAB CAD MS/MS: Fast Atom Bombardment Collision Activated Dissociation Mass Spectrometry/Mass Spectrometry)을 이용하여 알 수 있다. 연결위치-이성질체 올리고당을 아세틸화시키면 자유올리고당보다 연결위치의 구별이 쉽고 독특한 분절이온 패턴을 얻을 수 있다. 그 이유는 연결위치에 따라 각 올리고당이 충돌에너지(collision energy)를 흡수하여 glycosidic 결합 주위를 회전하는 회전운동의 자유도가 달라지기 때문이다.