• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.25-30
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• 2000

Ion mass doping method has been implemented for the fabrication of large area electronic devices such as TFT-LCD. In this work, the effect of ion mass doping on the velocity and the behavior of MILC was investigated. When amorphous silicon was either doped or bombarded by accelerated ions, MILC velocity was reduced by over 50% and the front edge of MILC became coarse. In order to analyze the dependence of silicon film's properties on ion mass doping, ultraviolet reflectance and sulfate roughness were investigated. Both the velocity and the behavior of MILC were found to be related with the increase of surface roughness by ion bombardment.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.254.1-254.1
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• 2014

Atmospheric plasma's electron temperature is less than thermal plasma, so it is useful at bio experiment. We have investigated the optical emission spectroscopy (OES) lines by spectrometer during Atmospheric plasma bombardment onto the PBS surface by using an Ar gas flow. Also we have measured the OH radical density inside the solution induced by the Atmospheric plasma bombardment. OH radical species are appeared at 308 nm and 309 nm. Densities of OH radical species has been found to be significantly decreased versus depth of the solution from 2 mm to 6 mm. OH radical density inside the PBS is measured to be about $1.87{\times}1016cm-3$ downstream at 2 mm from the surface under optimized Ar gas flow of 200 sccm in Atmospheric plasma. Also we have investigated cell viability of lung cancer and normal cell after Atmospheric plasma treatment for fixed exposure time in 60 seconds, but different depths. We used SEM, we observed change of cell morphorogy, did experiment about FDA & PI Staining method. It is found that there is selectivity between the lung cancer and lung normal cell, in which cancer cell definitely has higher cell death ratio more than normal cell. We have investigated change of bond structure in FT-IR spectroscopy, the following peaks were observed: and intense O-H peak at 3422 cm-1 and at 2925 cm-1 corresponds to C-H stretch vibrations of methylene group.

• Korean Journal of Materials Research
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• v.8 no.11
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• pp.977-981
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• 1998

Controlling the wafer temperatures from 200 to$500^{\circ}C$, low resistive tungsten thin films used for VLSI metallization are deposited by PECVD method. Resistivities of plasma deposited tungsten thin films are very sensitive to the $H_2/WF_6 $ partial pressure ratios. Residual stress behaviors of the films as a function of plasma power density were also studied. At the power density under the $0.7W/\textrm{cm}^2$, residual stress of W film is about $2.4\times10^9dyne/\textrm{cm}^2$. When the power density is. however, increased from 1.8 to $2.7W/\textrm{cm}^2$, residual stress is suddenly increased from $8.1\times10^9$ to $1.24\times10^{10}dyne/\textrm{cm}^2$ ue to the ion or radical bombardment at high power density.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.135-136
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• 1998

By the ion bombardment the original discrete layered structure is damaged and a uniformly mixed layer is formed by the intermixing of the films. Immediately after this dynamic cascade mixing a structure of this mixed layer is likely to be a mixture of randomly distributed atoms. Subsequently the mixed layered structure becomes a non-equilibrium structure such as the metastable pphase because the kinetic energies of the incident ions rappidly dissippate and host atoms within the collision cascade region are quenched from a highly energetic state. The formation of the metastable transition metal alloys using ion-beam-mixing has been extensively studied for many years because of their sppecific ppropperties that differ from those of bulk materials. in ion-beam-mixing the alloy or comppound is formed due to the atomic interaction between different sppecies during ion bombardment. in this study the metastable pphase formed by ion-beam-mixing pprocess is comppared with equilibrium one by arc-melting method by GXRD and XAS. Therfore we studied the fundamental characteristics of charge redistribution uppon alloying and formation of intermetallic comppounds. The multi-layer films were depposited on a wet-oxidized Si(100) substrate by sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr during depposition. These compprise 4 ppairs of Co and ppt layers where thicknesses of each layer were varied in order to change the alloy compposition.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.328-334
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• 2000

DLC (Diamond-Like Carbon) films were deposited by ECR-PECVD (electron cyclotron resonance plasma-enhanced chemical vapor deposition) method with the variation of substrate bias voltage under the others are constant except it. We have investigated the ion bombardment effect induced by the substrate bias voltage on films during the deposition of film. The characteristics of the film were analyzed using the Dektak surface profiler, SEM, FTIR spectroscopy, Raman spectroscopy and Nano Indentation tester. FTIR spectroscopy analysis shows that the amount of dehydrogenation in films was increased with the increase of substrate bias voltage and films thickness was decreased. Raman scattering analysis shows that integrated intensity ratio $(I_D /I_G)$ of the D and G peak was increased as the substrate bias voltage increased, and films hardness was increased. From these results, it can be concluded that films deposited at this experimental have the enhanced characteristics of DLC because of the ion bombardment effect on films during the deposition of film.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.466-468
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• 2012

Amorphous InGaZnO (${\alpha}$-IGZO) thin-film transistors (TFTs) are are very promising due to their potential use in thin film electronics and display drivers [1]. However, the stability of AOS-TFTs under the various stresses has been issued for the practical AOSs applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the ${\alpha}$-IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of ${\alpha}$-IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of ${\alpha}$-IGZO thin film. In this paper, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in ${\alpha}$-IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of ${\alpha}$-IGZO TFTs by this new deposition method.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.523-523
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• 2012

As the wafer geometric requirements continuously complicated and minutes in tens of nanometers, the expectation of real-time add-on sensors for in-situ plasma process monitoring is rapidly increasing. Various industry applications, utilizing plasma impedance monitor (PIM) and optical emission spectroscopy (OES), on etch end point detection, etch chemistry investigation, health monitoring, fault detection and classification, and advanced process control are good examples. However, process monitoring in semiconductor manufacturing industry requires non-invasiveness. The hypothesis behind the optical monitoring of plasma induced ion current is for the monitoring of plasma induced charging damage in non-invasive optical way. In plasma dielectric via etching, the bombardment of reactive ions on exposed conductor patterns may induce electrical current. Induced electrical charge can further flow down to device level, and accumulated charges in the consecutive plasma processes during back-end metallization can create plasma induced charging damage to shift the threshold voltage of device. As a preliminary research for the hypothesis, we performed two phases experiment to measure the plasma induced current in etch environmental condition. We fabricated electrical test circuits to convert induced current to flickering frequency of LED output, and the flickering frequency was measured by high speed optical plasma monitoring system (OPMS) in 10 kHz. Current-frequency calibration was done in offline by applying stepwise current increase while LED flickering was measured. Once the performance of the test circuits was evaluated, a metal pad for collecting ion bombardment during plasma etch condition was placed inside etch chamber, and the LED output frequency was measured in real-time. It was successful to acquire high speed optical emission data acquisition in 10 kHz. Offline measurement with the test circuitry was satisfactory, and we are continuously investigating the potential of real-time in-situ plasma induce current measurement via OPMS.

• ETRI Journal
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• v.24 no.3
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• pp.211-220
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• 2002

This study characterizes an oxide etching process in a magnetically enhanced reactive ion etching (MERIE) reactor with a $CHF_3/CF_4$ gas chemistry. We use a statistical $2^{4-1}$ experimental design plus one center point to characterize the relationships between the process factors and etch responses. The factors that we varied in the design include RF power, pressure, and gas composition, and the modeled etch responses were the etch rate, etch selectivity to TiN, and uniformity. The developed models produced 3D response plots. Etching of $SiO_2$ mainly depends on F density and ion bombardment. $SiO_2$ etch selectivity to TiN sensitively depends on the F density in the plasma and the effects of ion bombardment. The process conditions for a high etch selectivity are a 0.3 to 0.5 $CF_4$ flow ratio and a -600 V to -650 V DC bias voltage according to the process pressure in our experiment. Etching uniformity was improved with an increase in the $CF_4$ flow ratio in the gas mixture, an increase in the source power, and a higher pressure. Our characterization of via etching in a $CHF_3/CF_4$ MERIE using neural networks was successful, economical, and effective. The results provide highly valuable information about etching mechanisms and optimum etching conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.425-430
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• 2009

$ZrO_2$ film was deposited by facing target sputtering (FTS) system on polyethylene naphthalate (PEN) substrate as a gas barrier layer for flexible organic light emitting devices (FOLEDs), In order to control the heat of the FTS system caused by the ion bombardment in the cathode compared with the conventional sputtering system, the process characteristics of the FTS apparatus are investigated under various sputtering conditions such as the distance between two targets ($d_{TT}$), the distance between the target and the substrate ($d_{TS}$), and the deposition time. The $ZrO_2$ film by the FTS system can reduce the damage on the films because the ion bombardment with high-energy particles like gamma-electrons, Moreover, the $ZrO_2$ film with optimized condition ($d_{TT}$=140 mm) as a function of the distance from center to edge showed a very uniform thickness below 5 % for a deposition time of 3 hours, which can improve the interface property between the anode and the plastics substrate for flexible displays, It is concluded that the $ZrO_2$ film prepared by the FTS system can be applied as a gas barrier layer or an interlayer between the anode and the plastic substrate with good properties of an uniform thickness and a low deposition-temperature.

• Journal of the Korean Ceramic Society
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• v.37 no.11
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• pp.1084-1090
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• 2000

(Bi$_2$O$_2$)$^{2+}$층 사이에 두 개의 Ta-O 팔면체로 연결된 Bi 계의 층상 페로브스카이트 구조인 SrBi$_2$Ta$_2$O$_{9}$ (SBT) 박막을 XPS를 이용하여 깊이별 화학 상태 변화를 분석하였다. 아르곤 이온으로 SBT 박막을 식각하면, SBT 박막의 각 구성물들은 가속 Ar$^{+}$ 이온의 에너지에 따라 변화한다. SBT 각 구성물 중 Sr 3d의 화학 상태는 Ar$^{+}$ 이온의 에너지변화에 따라 근소하게 변화한다. 반면에, Ta 4f와 Bi 4f의 화학 상태 변화는 인가되는 Ar$^{+}$ 이온 에너지에 확실하게 의존한다. 특히, Bi 4f는 Sr과 Ta에 비해 낮은 Ar$^{+}$ 이온 에너지에서도 Bi-O의 화학 상태가 금속 Bi 화학 상태로 현저하게 변화한다. 이러한 SBT 박막의 화학 상태 변화는 산호 원자의 선택적인 식각 때문에 발생하며 선택적인 식각은 SBT 박막 내에서 각 구성물과 산소간의 질량 차이와 각 구성물의 열적 안정성에 의존함을 알 수 있다.