• Tribology and Lubricants
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• 제35권6호
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• pp.323-329
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• 2019

Sapphire is currently used as a substrate material for blue light-emitting diodes (LEDs). The market for sapphire substrates has expanded rapidly as the use of LEDs has extended into various industries. However, sapphire is classified as one of the most difficult materials to machine due to its hardness and brittleness. Recently, a lap-grinding process has been developed to combine the lapping and diamond mechanical polishing (DMP) steps in a single process. This paper studies, the effect of wafer surface roughness on the chemical mechanical polishing (CMP) process by pressure and abrasive concentration in the lap-grinding process of a sapphire wafer. In this experiment, the surface roughness of a sapphire wafer is measured after lap-grinding by varying the pressure and abrasive concentration of the slurry. CMP is carried out under pressure conditions of 4.27 psi, a plate rotation speed of 103 rpm, head rotation speed of 97 rpm, and slurry flow rate of 170 ml/min. The abrasive concentration of the CMP slurry was 20wt, implying that the higher the surface roughness after lapgrinding, the higher the material removal rate (MRR) in the CMP. This is likely due to the real contact area and actual contact pressure between the rough wafer and polishing pad during the CMP. In addition, wafers with low surface roughness after lap-grinding show lower surface roughness values in CMP processes than wafers with high surface roughness values; therefore, further research is needed to obtain sufficient surface roughness before performing CMP processes.

• Journal of Periodontal and Implant Science
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• 제48권3호
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• pp.164-173
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• 2018

Purpose: The aim of this study was to evaluate the antimicrobial effect of a newly devised toothbrush with light-emitting diodes (LEDs) on Porphyromonas gingivalis attached to sandblasted and acid-etched titanium surfaces. Methods: The study included a control group, a commercial photodynamic therapy (PDT) group, and 3 test groups (B, BL, and BLE). The disks in the PDT group were placed in methylene blue and then irradiated with a diode laser. The B disks were only brushed, the BL disks were brushed with an LED toothbrush, and the BLE disks were placed into erythrosine and then brushed with an LED toothbrush. After the different treatments, bacteria were detached from the disks and spread on selective agar. The number of viable bacteria and percentage of bacterial reduction were determined from colony counts. Scanning electron microscopy was performed to visualize bacterial alterations. Results: The number of viable bacteria in the BLE group was significantly lower than that in the other groups (P<0.05). Scanning electron microscopy showed that bacterial cell walls were intact in the control and B groups, but changed after commercial PDT and LED exposure. Conclusions: The findings suggest that an LED toothbrush with erythrosine treatment was more effective than a commercial PDT kit in reducing the number of P. gingivalis cells attached to surface-modified titanium in vitro.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.453-453
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• 2012

최근 디스플레이 시장에서는 저전력 자발광 소자인 OLED가 많은 관심 속에 연구 진행 되고 있다. 높은 효율과 투명, 플렉서블 디스플레이가 실현 가능한 OLED 소자는 초기 수명감소, 저전압구동 및 신뢰성에 대한 문제점을 개발 중에 있기에 많은 가능성을 현실화 하지 못하고 있다. 따라서 본 연구에서는 OLED소자의 역방향 반송자 회복 수명을 측정함으로써 스트레스에 의한 소자 열화를 전기적으로 분석하는 방법을 제시하고자 한다. 우선 5cm5cm의 면적에 네 개의 픽셀이 들어가는 후면 발광 Blue OLED를 제작하고 $-40^{\circ}C$부터 $100^{\circ}C$까지 $10^{\circ}C$간격으로 온도 스트레스를 주어 수명을 측정하였다. 전원공급기를 사용하여 직류 전압을 2V 인가하고 함수 발생기를 사용하여 +3V, -0.5V의 구형파를 500 kHz 주파수로 인가하였다. 이러한 조건으로 측정된 소자는 오실로스코프를 이용하여 전압 회복시간을 측정하고 온도 스트레스에 따른 수명을 산출하였다. $-40^{\circ}C$일 때 는 약 1.92E-7s이고 $100^{\circ}C$일 때 는 약 1.49E-7s로 약 0.43E-7s정도 감소하였다. 양의 전압이 인가되었을 때의 소자 내부의 전압은 온도가 증가함에 따라 꾸준히 감소하였고, 이에 따라 또한 꾸준히 감소하였다. 그러나 음의 전압이 인가되는 부분에서는 무설 전류에 의하여 음의 방향으로 흐르게 되는 전압의 절대값이 꾸준히 증가하였고 대체적으로 온도가 증가함에 따라 그래프가 아래로 이동하는 현상이 관찰되었다. 이러한 경향은 이상적인 다이오드의 반송자 축적 식을 통하여 온도가 증가함에 따라 가 증가하는 것과 관련이 있음을 확인하였다. 따라서 다수 층의 레이어로 이루어진 OLED소자의 열적 스트레스에 대한 수명 변화의 물리적 조건이 이상적인 다이오드 특성에 부합한다는 것을 확인하였다.

• 폴리머
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• 제30권5호
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• pp.426-431
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• 2006

Azacrown ether를 포함하는 청색발광 형광체, 9,10-bis [p-(1-aza-18-crown-6)methyl phenyl] anthracene (3)과 N,N-bis [9-(p-methylphenyl)anthracenylmethyl] -1,5-diaza-18-crown-6 (4)를 안트라센 유도체 1과 2를 mono- 및 diaza-18-crown-6와 반응시켜 합성하였다. 역시 azacrown ether를 포함하는 형광체 공중합체(5)를 1,6-diaza-18-crown-6와 1을 반응시켜 합성하였다. 제 1족, 2족 그리고 여러 가지금속 양이온을 결합시킴으로써 형광 발광세기 변화에 대한 연구를 진행하였다. 형광체는 ${\lambda}_{max}$=372nm에서 최대흡수를 그리고 ${\lambda}_{max}$=430 nm에서 최대 발광을 보여주었다. 형광체들의 최적 PH 조건을 조사하기 위해 형광 발광 세기의 pH 의존성도 측정하여 하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.144-144
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• 2008

Blue light emitting diode structures consisting of the InGaN/GaN multiple quantum wells were grown by metalorganic chemical vapor deposition at different growth temperatures for the p-GaN contact layers and the influence of growth temperature on the emission and microstructural properties was investigated. The I-V and electroluminescence measurements showed that the sample with a p-GaN layer grown at $1084^{\circ}C$ had a lower electrical turn-on voltage and series resistance, andenhanced output power despite the low photoluminescence intensity. Transmission electron microscopy (TEM) revealed that the intense electro luminescence was due to the formation of a p-GaN layer with an even distribution of Mg dopants, which was confirmed by TEM image contrast and strain evaluations. These results suggest that the growth temperature should be optimized carefully to ensurethe homogeneous distribution of Mg as well as the total Mg contents in the growth of the p-type layer.

• 한국재료학회지
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• 제24권7호
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• pp.351-356
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• 2014

A spherical $Sr_4Al_{14}O_{25}:Eu^{2+}$ phosphor for use in white-light-emitting diodes was synthesized using a liquid-state reaction with two precipitation stages. For the formation of phosphor from a precursor, the calcination temperature was $1,100^{\circ}C$. The particle morphology of the phosphor was changed by controlling the processing conditions. The synthesized phosphor particles were spherical with a narrow size-distribution and had mono-dispersity. Upon excitation at 395 nm, the phosphor exhibited an emission band centered at 497 nm, corresponding to the $4f^65d{\rightarrow}4f^7$ electronic transitions of $Eu^{2+}$. The critical quenching-concentration of $Eu^{2+}$ in the synthesized $Sr_4Al_{14}O_{25}:Eu^{2+}$ phosphor was 5 mol%. A phosphor-converted LED was fabricated by the combination of the optimized spherical phosphor and a near-UV 390 nm LED chip. When this pc-LED was operated under various forward-bias currents at room temperature, the pc-LED exhibited a bright blue-green emission band, and high color-stability against changes in input power. Accordingly, the prepared spherical phosphor appears to be an excellent candidate for white LED applications.

• 한국재료학회지
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• 제12권1호
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• pp.36-43
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• 2002

In this study, the nanosized ZnS thin films that can be used for fabrication of blue light-emitting diodes, electro-optic modulators, and n-window layers of solar cells were grown by the solution growth technique (SGT), and their surface morphology and film thickness and grain size dependence on the growth conditions were examined. Based on these results, the quantum size effects of ZnS were systematically investigated. Governing factors related to the growth condition were the concentration of precursor solution, growth temperature, concentration of aq. ammonia, and growth duration. X-ray diffraction patterns showed that the ZnS thin film obtained in this study had the cubic structure ($\beta$-ZnS). With decreasing growth temperature and decreasing concentration of precursor solution, the surface morphology of film was found to be improved. Also, the film thickness depends largely on the ammonia concentration. In particular, this is the first time that the surface morphology dependence of ZnS film grown by SGT on the ammonia concentration is reported. The energy band gaps of samples were determined from the optical transmittance values, and were shown to vary from 3.69 eV to 3.91 eV. These values were substantially higher than 3.65 eV of bulk ZnS. It was also shown that the quantum size effect of SGT grown ZnS is larger than that of the ZnS films grown by most other growth techniques.

• 한국세라믹학회지
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• 제44권5호
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• pp.155-159
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• 2007

Blue light-emitting phosphors having the excitation spectrum range of the medium-long ultraviolet ($280nm{\sim}400nm$) have been prepared by solid state reaction method. As a starting material the natural alkaline feldspar powder produced from the domestic mine field in Buyeo, Chungnam-do. The photoluminescence characteristics and crystal structures have been analyzed for the phosphor samples. The powder mixture of the natural alkaline feldspar and the rare-earth oxide was calcined at $800{\sim}1000^{\circ}C\;for\;3{\sim}4h$ in air. The calcined samples we fully ground at room temperature and then heat-treated in the mild reducing gas atmosphere of $5%H_2-95%N_2$ mixture at $1100{\sim}1150^{\circ}C\;for\;3{\sim}4h$. The natural alkaline feldspar material consists of the monoclinic orthoclase ($KAlSi_3O_8$) and the triclinic albite ($NaAlSi_3O_8$) phases. At the $0.5wt%Eu_2O_3$ addition the PL spectrum showed the maximum intensity and with further increase of $Eu_2O_3$ the PL intensity decreased. The albite phase disappeared in the $Eu_2O_3$ doped phosphors. The effect of the co-doped activator on the PL characteristics have been also discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.204.2-204.2
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• 2013

Wide band gap II-VI semiconductors have attracted the interest of many research groups during the past few years due to the possibility of their applications in light-emitting diodes and laser diodes. Among the II-VI semiconductors, ZnO is an important optoelectronic device material for use in the violet and blue regions because of its wide direct band gap (Eg ~3.37 eV) and large exciton binding energy (60 meV). F-doped ZnO (FZO) and undoped ZnO thin films were grown onto quartz substrate by the sol-gel spin-coating method. The doping level in the solution, designated by F/Zn atomic ratio of was varied from 0 to 5 in 1 steps. To investigate the effects of the structure and optical properties of FZO thin films were investigated using X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL). In the XRD, the residual stress, FWHM, bond length, and average grain size were changed with increasing the doping concentration. For the PL spectra, the high INBE/IDLE ratio of the FZO thin films doping concentration at 1 at.% than the other samples.