• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.293-293
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• 2014

Over last decade InGaN alloy structures have become the one of the most promising materials among the numerous compound semiconductors for high efficiency light sources because of their direct band-gap and a wide spectral region (ultraviolet to infrared). The primary cause for the high quantum efficiency of the InGaN alloy in spite of high threading dislocation density caused by lattice misfit between GaN and sapphire substrate and severe built-in electric field of a few MV/cm due to the spontaneous and piezoelectric polarizations is generally known as the strong exciton localization trapped by lattice-parameter-scale In-N clusters in the random InGaN alloy. Nonetheless, violet-emitting (390 nm) conventional low-In-content InGaN/GaN multi-quantum wells (MQWs) show the degradation in internal quantum efficiency compared to blue-emitting (450 nm) MQWs owing higher In-content due to the less localization of carrier and the smaller band offset. We expected that an improvement of internal quantum efficiency in the violet region can be achieved by replacing the conventional low-In-content InGaN/GaN MQWs with ultra-thin, high-In-content (UTHI) InGaN/GaN MQWs because of better localization of carriers and smaller quantum-confined Stark effect (QCSE). We successfully obtain the UTHI InGaN/GaN MQWs grown via employing the GI technique by using the metal-organic chemical vapor deposition. In this work, 1 the optical and structural properties of the violet-light-emitting UTHI InGaN/GaN MQWs grown by employing the GI technique in comparison with conventional low-In-content InGaN/GaN MQWs were investigated. Stronger localization of carriers and smaller QCSE were observed in UTHI MQWs as a result of enlarged potential fluctuation and thinner QW thickness compared to those in conventional low-In-content MQWs. We hope that these strong carrier localization and reduced QCSE can turn the UTHI InGaN/GaN MQWs into an attractive candidate for high efficient violet emitter. Detailed structural and optical characteristics of UTHI InGaN/GaN MQWs compared to the conventional InGaN/GaN MQWs will be given.

• Journal of the Korean Electrochemical Society
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• v.2 no.1
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• pp.17-22
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• 1999

Since the use of porous silicon for microsensors and microactuators is in the euly stage of study, only several application devices, such as light-emitting diodes and chemical sensors have so far been demonstrated. In this paper we present an overview of the present status of porous silicon sensors and actuators research with special emphasis on the applications of chemical sensors and optical devices. The capacitive type porous silicon humidity sensors had a nonlinear capacitance-humidity characteristic and a good sensitivity at higher humidity above $40\%RH$. The porous silicon $n^+-p-n^+$ device showed a sharp increase in current when exposed to an ethanol vapor. The $p^+-PSi-n^+$ diode fabricated on porous silicon diaphragm exhibited an optical switching characteristic, opening up its utility as an optical sensor or switch. The photoluminescence (PL) spectrum, taken from porous silicon under 365 nm excitation, had a broad emission, peaked at -610 nm. The electroluminescence(EL) from ITO/PSi/In LED had a broader spectrum with a blue shifted peak at around 535nm than that of the PL.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.16-16
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• 2010

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

• Korean Journal of Microbiology
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• v.45 no.4
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• pp.419-424
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• 2009

To provide the basis of biosensor based on the lux genes from bioluminescent bacteria of Photobacterium leiognathi and Vibrio harveyi, we test the expression of lux genes in several strains of Escherichia coli. The expression of the recombinant plasmid of PlXba.pT7-3, containing all lux genes requiring for light emission without adding substrate, in E. coli 43R was so strong to see the blue-green light in single colony as well as in the alginate immobilized cell. In addition, the light intensity was decreased by adding heavy metal ion such as cadmium and zinc ions. These result raise the possibility that a biosensor can be developed using the lux genes system.

• Korean Journal of Materials Research
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• v.12 no.7
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• pp.555-559
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• 2002

Blue-emitting $Sr_{10}$($PO$)$_{6}$ $Cl_2$:$Eu^{2+}$ and $_{(Sr,Mg) }$ 10/($PO_4$)$_{6}$ $Cl_2$:$Eu^{2+}$ phosphor particles for application of long-wavelength UV LED were prepared by ultrasonic spray pyrolysis. The luminescence characteristics under long- wave-length ultraviolet of the $Sr_{10}$ ($PO_4$)$_{6}$ $Cl_2$:$Eu^{2+}$ and (Sr,Mg)$_{10}$ ($PO_4$)$_{6}$ $Cl_2$:$^Eu{2+}$ phosphor particles prepared by the spray pyrolysis were compared with that of the commercial product. The PL intensity of the $Sr_{10}$ ($PO_4$)$_{6}$ $Cl_2$:$Eu^{2+}$ particles prepared by the spray pyrolysis was lower than that of the commercial $Sr_{10}$ ($PO_4$)$_{6}$ $Cl_2$:$Eu^{2+}$ particles because prepared $Sr_{10}$ ($PO_4$)$_{6}$ $Cl_2$:$Eu^{2+}$ phosphor particles had porous structure and hollow morphology. However, the PL intensity of the (Sr,Mg)$_{10}$($PO_4$)$_{6}$ $Cl_2$:$Eu^{2+}$ phosphor particles prepared by the spray pyrolysis was 8% higher than that of the commercial one. The high brightness of $(Sr,Mg)_{10}$ ($PO_4$)$_{6}$ $Cl_2$:Eu$^{2+}$ phosphor particles prepared by spray pyrolysis is due to the dense structure and high crystallinity of particles. The TEX>$(Sr,Mg)<_{10}$ ($PO_4$)$_{6}$ /$Cl_2$:$Eu^{ 2+}$ phosphor particles had main emission peak t 448 nm under long- wavelength ultraviolet.

• Applied Chemistry for Engineering
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• v.33 no.3
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• pp.309-314
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• 2022

Carbon dots (CDs) are few nanometer-sized carbon-based nanoparticles and emerging candidate materials in various fields such as biosensors and bioimaging due to their excellent optical properties and high biocompatibility. However, most CDs, emitting blue light, have limited their application in biomedical fields due to the low penetration of short-wavelength lights into the biological system. Therefore, there has been enormous need to develop long-wavelength emitting CDs. In this study, red-emitting CDs were successfully synthesized through the hydrothermal reaction of p-phenylenediamine with hydrochloric acid. In addition, the effect of the amount of hydrochloric acid on the formation of carbon dots, resulting in the variation of the chemical structures of CDs, were investigated, which was confirmed with the intensive structural analyses using infrared and X-ray photoelectron spectroscopy. It was found that the chemical structure of CDs governed their optical properties and quantum yield. Therefore, this study provides an insight into the role of acid in forming red-emitting CDs as the optimal probe for biomedical application.