Electrical properties of metal-oxide-semiconductor structures containing Si nanocrystals fabricated by rapid thermal oxidation process
(급속열처리산화법으로 형성시킨 $SiO_2$ /나노결정 Si의 전기적 특성 연구)
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- Journal of the Korean Vacuum Society
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- v.10 no.1
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- pp.44-50
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- 2001