• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.266-269
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• 2012

The most recently IGBT (insulated gate bipolar mode transistor) devices are in the most current conduction capable devices and designed to the big switching power device. Use this number of the devices are need to high voltage and low on-state voltage drop. And then in this paper design of field stop IGBT is insert N buffer layer structure in NPT planar IGBT and optimization design of field stop IGBT and trench field stop IGBT, both devices have a comparative analysis and reflection of the electrical characteristics. As a simulation result, trench field stop IGBT is electrical characteristics better than field stop IGBT.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.261-265
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• 2012

IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.105-108
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• 2020

In this study, experiments and simulations were conducted for a 1,200-V-class trench Si insulated-gate bipolar transistor (IGBT) with a small cell pitch below 2.5 ㎛. Presently, as a power device, the 1,200-V-class trench Si IGBT is used for automotives including electric vehicles, hybrid electric vehicles, and industrial motors. We obtained a breakdown voltage of 1,440 V, threshold of 6 V, and state voltage drop of 1.75 V. This device is superior to conventional IGBTs featuring a planar gate. To derive its electrical characteristics, we extracted design and process parameters. The cell pitch was 0.95 ㎛ and total wafer thickness was 140 ㎛ with a resistivity of 60 Ω·cm. We will apply these results to achieve fine-pitch gate power devices suitable for electrical automotive industries.

• 한국컴퓨터산업교육학회:학술대회논문집
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• 한국컴퓨터산업교육학회 2003년도 제4회 종합학술대회 논문집
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• pp.79-82
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• 2003

The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with $SiO_2$ and $Al_2O_3$ at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with $Al_2O_3$ insulator had good thermal conductivity and reliability.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2005년도 전기학술대회논문집
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• pp.1011-1015
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• 2005

Fully digital controlled 20-bit magnet power supplies have been developed and successfully tested for closed orbit correction of PLS(Pohang Light Source). The new digital power supply has used fiber optics for 25kHz switching of IGBT drivers, and implemented DSP, ADC, Interlock, DCCT cards in a compact 3U-sized 19" chassis. Input/Output low-pass filters suppress harmonics of 60Hz line frequency and switching frequency noise effectively. Overall performance of the power supplies have been demonstrated as +/- 2ppm short-term stability(<1 min), and +/- 10ppm long-term stability(<36 hours). All the existing 12-bit 70 power supplies for vertical correction magnets will be replaced with new digital power supplies during 2005 summer shutdown period. In this paper, we will describe the hardware structure and control method of the digital power supply and the experimental results will be shown.

• Journal of Power Electronics
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• 제16권2호
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• pp.522-531
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• 2016

This paper proposes a new NLC (Nearest Level Control) scheme for MMCs (Modular Multilevel Converters), which offers voltage ripple reductions in the DC capacitor of the SM (Sub-Module), the output voltage harmonics, and the switching losses. The feasibility of the proposed NLC was verified through computer simulations. Based on these simulation results, a hardware prototype of a 10kVA, DC-1000V MMC was manufactured in the lab. Experiments were conducted to verify the feasibility of the proposed NLC in an actual hardware environment. The experimental results were consistent with the results obtained from the computer simulations.

• Journal of Power Electronics
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• 제16권2호
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• pp.532-541
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• 2016

A single-phase asymmetrical cascaded multilevel inverter is introduced with the goal of increasing power quality with the reduction of power in insulated-gate bipolar transistor (IGBT) switches. In the present work, the proposed inverter topology is analyzed and generalized with respect to different proposed algorithms for choosing different voltage source values. To prove the advantages of the proposed inverter, a case study involving a 17-level inverter is conducted. The simulation and experimental results with reduced THD are also presented and compared with the MATLAB/SIMULINK simulation results. Finally, the proposed topology is compared with different multilevel inverter topologies available in the literature in terms of the number of IGBT switches required with respect to the number of levels generated in the output of inverter topologies.

• Journal of Power Electronics
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• 제16권2호
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• pp.778-785
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• 2016

An excess carrier lifetime extraction method is derived for physics-based insulated gate bipolar transistor (IGBT) models with consideration of the latest development in IGBT modeling. On the basis of the 2D mixed-mode Sentaurus simulation, the clamp turn-off test is simulated to obtain the tail current. The proposed excess carrier lifetime extraction method is then performed using the simulated data. The comparison between the extracted results and actual lifetime directly obtained from the numerical device model precisely demonstrates the accuracy of the proposed method.

• Journal of Power Electronics
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• 제16권2호
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• pp.769-777
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• 2016

This work focuses on current sharing between punch-through insulated gate bipolar transistors (IGBTs) connected in parallel and evaluates the mechanisms that allow overall current balancing. Two different control strategies are presented. These strategies are based on the modification of transistor gate-emitter control voltage V_GE by using an active gate driver circuit. The first strategy relies on the calculation of the average value of the current flowing through all parallel-connected IGBTs. The second strategy is proposed by the authors on the basis of a current cross reference control scheme. Finally, the simulation and experimental results of the application of the two current sharing control algorithms are presented.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.374-377
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• 2003

In this paper, turn on characteristics of (Punch-Through Insulated Gate Bipolar Transistor) PT-IGBT has been studied. Based on the transient power loss, turn on charges first base to collector capacitance. Furthermore we present the charge variation in the base including n+ buffer layer to express the transient turn-on characteristics of the device.