• Journal of IKEEE
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• v.21 no.1
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• pp.1-6
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• 2017

IGBT (Insulated Gate Bipolar Transistor) device is a device with excellent current conducting capability, it is widely used as a switching device power supplies, converters, solar inverter, household appliances or the like, designed to handle the large power. This research was proposed 1200 class dual gate IGBT for electrical vehicle. To compare the electrical characteristics, The planar gate IGBT and trench gate IGBT was designd with same design and process parameters. And we carried to compare electrical characteristics about three devices. As a result of analyzing electrical characteristics, The on state voltage drop charateristics of dual gate IGBT was superior to those of planar IGBT and trench IGBT. Therefore, Aspect to Energy Loss, dual gate IGBT was efficiency. The breakdown volgate and threshold voltage of planar, trench and dual gate IGBT were 1460V and 4V.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.951-954
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• 2005

This paper presents a study on the accuracy position Controller design for the Composite Smoke Bomb Rotational driving system using a BLDC servo motor. Function of Smoke Bomb is blind in the enermy's sight so that need to high response. The BLDC servo motor controller was designed with DSP(TMS320VC33), IGBT(Insulated Gate Bipolar. Transistor), IGBT gate driver and CPLD(EPM7128). This paper implements those control with vector control and MIN-MAX PWM. Vector control requires information about rotor positions, a resolver should be used to achieve that. The main controller is implemented with a TMS320VC33 high performance floating-point DSP(Digital Signal Process) and PWM Generator is embodied using EPM7128.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.262-266
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• 2011

A simulation study of a current-mode direct current (DC)-DC boost converter is presented in this paper. This converter, with a fully-integrated power module, is implemented by using bipolar complementary metal-oxide semiconductor (BiCMOS) technology. The current-sensing circuit has an op-amp to achieve high accuracy. With the sense metal-oxide semiconductor field-effect transistor (MOSFET) in the current sensor, the sensed inductor current with the internal ramp signal can be used for feedback control. In addition, BiCMOS technology is applied to the converter, for accurate current sensing and low power consumption. The DC-DC converter is designed with a standard 0.35 ${\mu}m$ BiCMOS process. The off-chip inductor-capacitor (LC) filter is operated with an inductance of 1 mH and a capacitance of 12.5 nF. Simulation results show the high performance of the current-sensing circuit and the validity of the BiCMOS converter. The output voltage is found to be 4.1 V with a ripple ratio of 1.5% at the duty ratio of 0.3. The sensing current is measured to be within 1 mA and follows to fit the order of the aspect ratio, between sensing and power FET.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.19 no.3
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• pp.135-140
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• 2019

In this paper, a frequency split type broadband drive amplifier operating in the L, S and C bands was designed and fabricated. Transistor is difficult to efficiently use when the fractional bandwidth of the drive amplifier is more than 100%, In particular, the characteristics of the driving amplifier are important for operating the power amplifier in which the characteristics of the output power and the efficiency are sensitively changed according to the frequency band. A frequency split methods was applied to maximize the bandwidth of a drive amplifier and to divide the output of the drive amplifier into low band and high band so that the transistor of the power amplifier located at the rear of the drive amplifier can be efficiently used. The designed drive amplifier was fabricated in GaAs HBT technology and 9-layer SiP, and verified by the measurements. The fabricated drive amplifier shows a gain of more than 8 dB and an output power of more than 15 dBm in the operating frequency range.

• Journal of the Korea Convergence Society
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• v.12 no.2
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• pp.193-200
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• 2021

As the degree of environmental pollution caused by the use of fossil fuels intensifies, many countries continue to invest in the development of alternative energy. PEMFC, one of the alternative energies, consists of four main components: bipolor plate, electrolyte, gas diffusion layer, and electrode. Among them, bipolor plate, the gas diffusion layer, and electrode are generally manufactured using carbon materials such as carbon black and carbon fiber. These carbon materials are expensive in manufacturing process or have disadvantages such as corrosion, and research is being conducted in many fields to improve this. This paper collects several research results conducted to improve the shortcomings of these three components and examines the trends of PEMFC by grasping what problems have been and how they have improved.

• Progress in Superconductivity and Cryogenics
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• v.10 no.4
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• pp.23-28
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• 2008

As a part of the plasma control system (PCS) for the first plasma campaign of KSTAR, seven sets of fast feedback control loop for the superconducting poloidal field magnet power supply (PF MPS) have been implemented. A special real-time digital communication interface has been developed for the simultaneous exchanges of the current/voltage data from the 7 sets of 12-thyristor power supplies in a 200 microsecond control cycle. Preliminary power supply tests have been performed before actual cooldown of the device. A $29mH/50m{\Omega}$ solenoid dummy has been fabricated for a series of single power supply tests. Connectivity and response speed of the plasma control system have been verified. By changing hardware cabling, this load was also used to estimate mutual inductance coupling effects of two geometrically adjacent solenoid coils on each power supply. After the cooldown was complete, each pair of the up/down symmetric PF coils has been serially connected and tested as part of the device commissioning process. Bipolar operation and longer pulse attempts have been investigated. The responses of the coils and power supplies corresponding to the plasma magnetic controls in plasma discharges are also analyzed for the future upgrades.

• Carbon letters
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• v.28
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• pp.31-37
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• 2018

This paper examines a simple one-step and catalyst-free method for synthesizing carbon nanoparticles from aliphatic alcohols and n-hexane with linear molecule formations by using a stable solution plasma process with a bipolar pulse and an external resistor. When the external resistor is adopted, it is observed that the current spikes are dramatically decreased, which induced production of a more stable discharge. Six aliphatic linear alcohols (methanol-hexanol) containing carbon with oxygen sources are studied as possible precursors for the massive production of carbon nanoparticles. Additional study is also carried out with the use of n-hexane containing many carbons without an oxygen source in order to enhance the formation of carbon nanoparticles and to eliminate unwanted oxygen effects. The obtained carbon nanoparticles are characterized with field emission-scanning electron microscopy, energy dispersive X-ray spectroscopy, and Raman spectroscopy. The results show that with increasing carbon ratios in alcohol content, the synthesis rate of carbon nanoparticles is increased, whereas the size of the carbon nanoparticles is decreased. Moreover, the degree of graphitization of the carbon nanoparticles synthesized from 1-hexanol and n-hexane with a high carbon (C)/oxygen (O) ratio and low or no oxygen is observed to be greater than that of the carbon nanoparticles synthesized from the corresponding materials with a low C/O ratio.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.5
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• pp.71-79
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• 2010

This paper presents a design of a LLC resonant controller IC. LLC resonant controller IC controls the voltage of the 2nd side by adjusting frequency the input frequency of the external resonant circuit. The clock generator is integrated to provide the pulse to the resonant circuit and its frequency is controlled by the external resistor. Also, the frequency of the VCO is adjusted by the feedback voltage. The protection circuits such as UVLO(Under Voltage Lock Out), brown out, fault detector are implemented for the reliable and stable operation. The HVG, and LVG drivers can provide the high current and voltage to the IGBT. The designed LLC resonant controller IC is fabricated with the 0.35 um 2P3M BCD process. The overall die size is $1400um{\times}1450um$, and supply voltage is 5V, 15V.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.6
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• pp.34-42
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• 2002

In this paper, we propose a temperature independent the detective voltage source in voltage detector. The value of a detective voltage source is designed to become m times of silicon bandgap voltage at zero absolute temperature. By properly choosing the temperature coefficient of diode, the temperature coefficient of a concave voltage nonlinearities generated by the ${\Delta}V_{BE}$ section of diode between base and emitter of transistors with a different area can be summed with convex nonlinearities the $V_{BE}$ voltage to achieve the near zero temperature coefficient of the detective voltage source. We designed that the value of a detective voltage can be varied by ${\Delta}V_{BE}$, the $V_{BE}$multiplier circuit and resistor. In order to verify the performance of a proposed detective voltage source, we manufactured the voltage detector IC for 1.9V which is fabricated in $6{\mu}m$ Bipolar technology and measured the operating characteristics, the temperature coefficient of a detective voltage. To reduce the deviation of a detective voltage in the IC process step, we introduced a trimming technology, ion implantation and an isotropic etching. In manufactured IC, the detective voltage source could achieve the stable temperature coefficient of 29ppm/$^{\circ}C$ over the temperature range of -30$^{\circ}C$ to 70$^{\circ}C$. The current consumption of a voltage detector constituted by the proposed detective voltage source is $10{\mu}A$ from 1.9V-supply voltage at room temperature.

• Korean Journal of Biological Psychiatry
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• v.21 no.4
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• pp.168-174
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• 2014

Objectives Sensory gating dysfunctions in patients with schizophrenia and bipolar disorder have been investigated through two similar methods ; P50 suppression and prepulse inhibition paradigms. However, recent studies have demonstrated that the two measures are not correlated but rather constitute as distinct neural processes. Recent studies adopting spectral frequency analysis suggest that P50 suppression reflects the interaction between gamma and other frequency bands. The aim of the present study is to investigate which frequency component shows more significant interaction with gamma band. Methods A total of 108 mood disorder patients and 36 normal subjects were included in the study. The P50 responses to conditioning and test stimuli with an intra-pair interval of 500 msec were measured in the study population. According to P50 ratio (amplitude to the test stimulus/amplitude to the conditioning stimulus), the subjects with P50 ratio less than 0.2 were defined as suppressed group (SG) ; non-suppressed group (NSG) consisted of P50 ratio more than 0.8. Thirty-five and 25 subjects were included in SG and NSG, respectively. Point-to-point correlation coefficients (PPCCs) of both groups were calculated between two time-windows : the first window (S1) was defined as the time-window of one hundred millisecond after the conditioning auditory stimulus and the second window (S2) was defined as the time-window of 100 msec after the test auditory stimulus. Spectral frequency analysis was performed to investigate which frequency band results in the difference of PPCC between SG and NSG. Results Significant reduction of PPCC between S1 and S2 was observed in the SG (Pearson's r = 0.24), compared to PPCC of the NSG (r = 0.58, p < 0.05). In spectral frequency analysis, gamma band showed "phase-reset" and similar responses after the two auditory stimuli in suppressed and non-suppressed group. However in the case of alpha band, comparison showed significantly low PPCC in SG (r = -0.14) compared to NSG (r = 0.36, p < 0.05). This may be reflecting "phase-out" of alpha band against gamma band at approximately 50 msecs after the test stimulus in the SG. Conclusions Our study suggests that normal P50 suppression is caused by phase-out of alpha band against gamma band after the second auditory stimulus. Thus it is demonstrated that normal sensory gating process is constituted with attenuated alpha power, superimposed on consistent gamma response. Implications of preserved gamma and decreased alpha band in sensory gating function are discussed.