• 대한금속재료학회지
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• 제49권8호
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• pp.657-663
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• 2011

This study represents the results of the peel strength and surface morphology according to the preprocessing times of polyimide (PI) in a Cu/Ni/PI structure flexible copper clad laminate production process based on the polyimide. Field emission scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy were used to analyze the surface morphology, crystal structure, and interface binding structure of sputtered Ni, Cu, and electrodeposited copper foil layers. The surface roughness of Ni, Cu deposition layers and the crystal structure of electrodeposited Cu layers were varied according to the preprocessing times. In the RF plasma times that were varied by 100-600 seconds in a preprocessing process, the preprocessing applied by about 300-400 seconds showed a homogeneous surface morphology in the metal layers and that also represented high peel strength for the polyimide. Considering the effect of peel strength on plastic deformation, preprocessing times can reasonably be at about 400 seconds.

• 한국동물학회지
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• 제38권4호
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• pp.523-530
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• 1995

돼지의 난소 조직내에 존재하는 심방이뇨 호르몬 수용체 분포를 알아 보기 위하여 자가방사법을 통해 125I로 표지한 rANP(1-28)의 특이적 결합 부위를 관찰하였다. 난소 조직 중 125I-rANP(1-28)의 강한 결합 부위는 난포의 과립막 세포층이었으며, 외난포막층에서도 125I-rANP(1-28)의 결합 부위가 관찰되었다. 그러나 내난포막층을 포함한 난소내의 다른 조직과 특히 황체에서는 125I-rANP(1-28)의 결합 부위가 나타나지 않았다. 난포의 과립막 세포층과 외난포막층에서의 이러한 125I-rANP(1-28)의 결합은 다량의 rANP(1-28)에 의하여 완전히 전위되었지만, 펩티드 호르몬인 angiotensin II 및 arginine vasopressin에 의해서는 과량의 농도에서도 전위되지 않아 125I-rANP(1-28)의 결합이 특이적임을 확인하였다. 또한 이러한 특이적 결하은 심방이뇨 호르몬의 생물학적 수용체 외에, 다른 기능을 담당하는 clearance 수용체의 특이적 ligand인 C-ANF에 의해서도 전이되었다. 이상의 결과는 돼지의 난소에 있어서 난포의 과립막 세포층 및 외난포막에 심방이뇨 호르몬의 생물학적 또는 coearance 수용체가 존재함을 보여주며, 이는 심방이뇨 호르몬의 수용체가 난자의 성숙에 관련된 난포의 발달과정에 관여할 수 있음을 시사한다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.163.2-163.2
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• 2010

We developed a simple method to synthesis a nitrogen doped graphene, nitrogen plasma treated graphene (NPG) sheets thought nitrogen plasma etching of graphene oxide (GO). X-ray photo electron spectroscopy (XPS) study of NPG sheets treated at various plasma conditions reveal that N-doping is classified to 3 kinds of binding configurations. The nitrogen doping concentration is at least 1.5 at % and up to 3 at% with changing of ratio of nitrogen configuration in NPG. Our group demonstrate ultracapacitor with high capacity and extremely durable using a NPG sheets that are comparable to pristine graphene supercapacitor, and pseudocapacitor using polymer and metal oxide with redox reaction, capacitance that are three-times higher, and a cycle life that are extremely stable. We also realized flexible capacitor by using the paper electrode that are coated by NPG sheets. NPG paper capacitor presented almost same performance compare with NPG on a metal substrate, and durability is much more enhanced than that. To additionally explain that how different kind of atoms in graphene layers can act as the ion absorption sites, we simulated the binding energy between nitrogen in graphene layer and ions in electrolyte. Increasing the energy density and long cycle life of ultracapacitor will enable them to compete with batteries and conventional capacitors in number of applications.

• 한국전기전자재료학회논문지
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• 제27권6호
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• pp.350-355
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• 2014

Bottom-gate tin oxide ($SnO_2$) thin film transistors (TFTs) were fabricated on $N^+$ Si wafers used as gate electrodes. 60-nm-thick $SnO_2$ thin films acting as active layers were sputtered on $SiO_2/Al_2O_3$ films. The $SiO_2/Al_2O_3$ films deposited on the Si wafers were employed for gate dielectrics. In order to increase the resistivity of the $SnO_2$ thin films, oxygen mixed with argon was introduced into the chamber during the sputtering. The mobility of $SnO_2$ TFTs was measured as a function of the flow ratio of oxygen to argon ($O_2/Ar$). The mobility variation with $O_2/Ar$ was analyzed through studies on crystallinity, oxygen binding state, optical properties. X-ray diffraction (XRD) and XPS (X-ray photoelectron spectroscopy) were carried out to observe the crystallinity and oxygen binding state of $SnO_2$ films. The mobility decreased with increasing $O_2/Ar$. It was found that the decrease of the mobility is mainly due to the decrease in the polarizability of $SnO_2$ films.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.43.1-43.1
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• 2018

Spatial distribution of binding state in depth direction is investigated in a hard skin layer on soft polydimethylsiloxane (PDMS) fabricated by Ar ion beam irradiations. The hard skin layer known as a silica-like homogenous layer was composed of two layers. Impinging Ar ions transfer energy to PDMS as a function of collisional energy transfer rate, which is the maximum at surface and decreases gradually as an ion penetrates. This formed the heterogeneous hard skin layer that consists of a top-most layer and an intermediate layer. XPS depth profiling showed the existence of the top-most layer and intermediate layer. In the top-most layer, scission and cross-linking were occurred simultaneously and Si-O bond showed dissociated status, SiOx (x = 1.25 - 1.5). Under the top-most layer, there was the intermediate layer in which cross-linking is mainly occurred and Si-O bond showed silica-like binding status, SiOx (x = 1.75 - 2). And theoretical analysis which calculates the collisional energy transfer and a displacement per atom explained the thickness variation of top-most layer according to Ar ion energy from 360 eV to 840 eV.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.340-340
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• 2010

Various structures of vacancy defects in graphene layers and carbon nanotubes have been reported by high resolution transmission electron microscope (HR-TEM) and those arouse an interest of reconstruction processes of vacancy defects. In this talk, we present reconstruction processes of vacancy defects in a graphene and a carbon nanotube by tight-binding molecular dynamics (TBMD) simulations and by first principles total energy calculations. We found that a structure of a dislocation defect with two pentagon-heptagon (5-7) pairs in graphene becomes more stable than other structures when the number of vacancy units is ten and over. The simulation study of scanning tunneling microscopy reveals that the pentagon-heptagon pair defects perturb the wavefunction of electrons near Fermi level to produce the $\sqrt{3}\;{\times}\;\sqrt{3}$ superlattice pattern, which is in excellent agreement with experiment. It is also observed in our tight-binding molecular dynamics simulation that 5-7 pair defects play a very important role in vacancy reconstruction in a graphene layer and carbon nanotubes.

• Bulletin of the Korean Chemical Society
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• 제24권3호
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• pp.325-333
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• 2003

An analysis of the electronic structure and bonding in the ternary silicide YNiSi₃is made, using extended Huckel tight-binding calculations. The YNiSi₃structure consists of Ni-capped Si₂dimer layers and Si zigzag chains. Significant bonding interactions are present between the silicon atoms in the structure. The oxidation state formalism of $(Y^{3+})(Ni^0)(Si^3)^{3-}$ for YNiSi₃constitutes a good starting point to describe its electronic structure. Si atoms receive electrons from the most electropositive Y in YNiSi₃, and Ni 3d and Si 3p states dominate below the Fermi level. There is an interesting electron balance between the two Si and Ni sublattices. Since the ${\pi}^*$ orbitals in the Si chain and the Ni d and s block levels are almost completely occupied, the charge balance for YNiSi₃can be rewritten as $(Y^{3+})(Ni^{2-})(Si^{2-})(Si-Si)^+$, making the Si₂layers oxidized. These results suggest that the Si zigzag chain contains single bonds and the Si₂double layer possesses single bonds within a dimer with a partial double bond character. Strong Si-Si and Ni-Si bonding interactions are important for giving stability to the structure, while essentially no metal-metal bonding exists at all. The 2D metallic behavior of this compound is due to the Si-Si interaction leading to dispersion of the several Si₂π bands crossing the Fermi level in the plane perpendicular to the crystallographic b axis.

• KSBB Journal
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• 제15권5호
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• pp.497-500
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• 2000

Avidin의 금속표변에 대한 강한 결합력과 avidin-biotin의 강한 결합력을 이용하여 금속 표면 위에 라포좀과 같은 유기 분자막의 다층 형성 과정을 수정진동자를 이용하여 분석하였다. 금속 표변위에 적층되는 유기 분자막에 대한 정보를 수 집하고 그 가능성을 검토하여 바이오 센서에서 감도를 향상 시킬 수 있는 새로운 방법을 제시하고자 하였다.

• Bulletin of the Korean Chemical Society
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• 제15권7호
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• pp.545-549
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• 1994

Using the extended Hackel molecular orbital method in connection with the tight binding model, we have studied electronic structure and related properties of the charged cluster models relating to superconducting $YBa_{2}Cu_{3}O_{7-x}$, crystals in which O-atoms in regular sites were selectively replaced with Se atoms. In analogy to the isomorphism problem with molecules, we discuss all possible combinations of Se-substitutions in O-sites with one, two, and four Se atoms. The calculations are carried out within charged cluster models for analogues of YBa-copper oxide. Our results suggest that the electronic structure of the symmetrically Se-substituted or Se-added compound is closer to that of the YBCO superconducting compound than that obtained from the unsymmetrical substitution. This applies in particular if O is replaced with Se around the Cu(1) site. Symmetrical substitutions in the $CuO_2$ layers give rise to large variations in the electronic structure of $YBa_{2}Cu_{3}O_{7}$. This is consistent with the fact that superconductivity is very sensitive to the electronic population of the $CuO_2$ layers.

• 인지과학
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• 제28권4호
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• pp.223-243
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• 2017

한글 입력 방식은 어떤 형태이건 기본 낱자들에 대한 글쇠배열과 결합 규칙이라는 두 요소를 반드시 가진다. 그런데 그 규칙을 토대로 입력 방식을 실제로 구현해 보면, 기본 낱자가 여럿 모인 복합 낱자를 입력할 때 모호성이 존재하거나 다음 글자의 연속 입력이 되지 않는 식의 문제가 발생할 수 있다. 한글은 모아쓰기라는 특성으로 인해 낱자 경계와 글자 경계라는 보이지 않는 정보가 입력 과정에서 추가로 고려되어야하기 때문이다. 초성과 종성을 문맥에 따라 구분해야 하는 두벌식, 글쇠가 매우 적은 모바일 환경, 수십 종류의 낱자들을 조합해야 하는 옛한글이라는 조건이 더해지면 입력 방식을 기술하고 분석하는 난이도가 더욱 높아진다. 본 논문에서는 한글 입력 방식에서 쓰이는 낱자의 결합 규칙을 대결합과 소결합으로 구분해서 기술하는 체계를 제안하며, 이를 토대로 어떤 입력 방식이 주어졌을 때 복합 낱자를 입력하는 세부 규칙을 생성하고 예상되는 문제점을 자동으로 분석해 주는 도구 프로그램을 소개하였다. 그리고 모바일용 삼성 천지인과 KT나랏글 한글 입력 방식을 실제로 분석한 결과를 제시하였다.