• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.367-367
• /
• 2012

We investigate Landau level spectra of twisted bilayer graphene under a perpendicular magnetic field, showing that the layers provide rich electronic structure depending on misoriented angle. New types of excitations with Landau level sequences due to the reflection of interlayer coupling level are matter of interest in the present work. We calculate the electronic structure of bilayer systems with a relative small angle rotation of the two graphene layers. Calculated Landau level spectra for twisted bilayer graphene using a continuum formulation are in good agreement with existing experimental and theoretical studies. Twist angle dependent numerical simulations provide significant insights for the nature of the Landau level spectra in bilayer graphene, combining signals from both massive and massless Dirac fermions. We finally discuss the influence of the graphene layers in the experimental sample that related to the magneto-transport measurements including quantum Hall conductance.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.267-267
• /
• 2010

The continuous change in the electronic band structure of metal-adsorbed bilayer graphene was calculated as a function of metal coverage using first-principles calculations. Instead of modifying the unit cell size as a function of metal coverage, the distance between the metal atoms and bilayer graphene in the same $2{\times}2$ unit unit cell was controlled to change the total charges transferred from the metal atoms to bilayer graphene. The validity of the theoretical method was confirmed by reproducing the continuous change in the electronic band structure of K-adsorbed epitaxial bilayer graphene, as shown by Ohta et al. [Science 313, 951 (2006)]. In addition, the changes in the electronic band structures of undoped, n-type, and p-type bilayer graphene were studied schematically as a function of metal coverage using the theoretical method.

• Journal of the Korean Ceramic Society
• /
• v.36 no.6
• /
• pp.604-610
• /
• 1999

Silicide layer structures and morphology degradation of the surface and interface of the silicide layers for he Co/refractory metal bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The CoSi-CoSi2 phase transition temperature is lower an morphology degradation of the silcide layer occurs more severely for the Co/refractorymetal bilayer on the P-doped polycrystalline Si substrate than on the single Si substrate. Also the final layer structure and the morphology of the films after silicidation annealing was found to depend strongly upon the interlayer metal. The layer structure after silicidation annealing of Co/Hf/doped-poly Si is Co-Hf alloy/polycrystalline CoSi2/poly Si substrate while that of Co/Nb is polycrystalline CoSi2/NbSi2/polycrystalline CoSi2/poly Si.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.14 no.2
• /
• pp.63-67
• /
• 2004

The layered structure of cobalt dodecanesulfate was synthesized. A phase transition takes place at various temperature ranges and results in a drastic change of the layer distance. A monolayer structure of cobalt dodecanesulfate at room temperature transformed to a bilayer structure as a dehydrated form at high temperature.

• Proceedings of the KIEE Conference
• /
• 1992.07b
• /
• pp.835-838
• /
• 1992

The $TiN/TiSi_2$ bilayer has been studied for contact barrier layer at ULSI recently. The $TiN/TiSi_2$ bilayer was formed by RTA in $NH_3$ ambient simultaneously after the Ti film was deposited on silicon substrate. In this paper, properties of $TiN/TiSi_2$ bilayer was evaluated according to $BF_2$ dopant concentration and dopant redistribution in $TiN/TiSi_2$ bilayer was also analyzed. In this experiment, the composition and structure of $TiN/TiSi_2$ bilayer were constant even though dopant concentration increased but silicide growth rate decreased. Boron atoms were redistributed within TiN film and at $TiSi_2Si$ interface during the bilayer formation.

• Journal of the Korean Ceramic Society
• /
• v.41 no.7
• /
• pp.503-507
• /
• 2004

The importance of porous ceramics has been increasingly recognized and adequate strength of porous ceramics is now required for structural applications. Porosities of porous ceramics act as flaws in inner volume and outer surface which result in severe strength degradation. The effect of pore structure, however, on strength and reliability of porous ceramics has not been clearly understood. We investigate the relationship between pore structure and mechanical properties using a sphere indentation on bilayer structure, porous ceramic top layer with soft polymer substrate. Porous alumina and silica were prepared to characterize the isolated pore structure and interconnected pore structure, respectively. The porous ceramic with 1mm thickness were bonded to soft polycarbonate substrate and then fracture strengths were estimated from critical loads for radial cracking of porous ceramics during sphere indentation from top surface. This simple and reproducible technique provides Weibull modulus of strength of porous ceramics with different pore structure. It shows that the porous ceramics with isolated pore structure have higher strength and higher Weibull modulus as well, than those with interconnected pore structure even with the same porosity.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.4
• /
• pp.189-192
• /
• 2014

Yttria-stablized zirconia (YSZ) is the most commonly used electrolyte material, but the reduction in working temperature leads to insufficient ionic conductivity. Ceria based electrolytes (GDC) are more attractive in terms of conductivity at low temperature, but these materials are well known to be reducible at very low oxygen partial pressure. The reduction of electrolyte resistivity is necessary to overcome cell performance losses. So, thin YSZ/GDC bilayer technology seems suitable for decreasing the electrolyte resistance at lower operating temperatures. Bilayer electrolytes composed of a galdolinium-doped $CeO_2$ ($Ce_{0.9}Gd_{0.1}O_{1.95}$, GDC) layer and yttria-stabilized $ZrO_2$ (YSZ) layer with various thicknesses were deposited by RF sputtering and E-beam evaporation. The bilayer electrolytes were deposited between porous Ni-GDC anode and LSM cathode for anode-supported single cells. Thin film structure and surface morphology were investigated by X-ray diffraction (XRD), using $CuK{\alpha}$-radiation in the range of 2ce morphol$^{\circ}C$. The XRD patterns exhibit a well-formed cubic fluorite structure, and sharp lines of XRD peaks can be observed, which indicate a single solid solution. The morphology and size of the prepared particles were investigated by field-emission scanning electron microscopy (FE-SEM). The performance of the cells was evaluated over $500{\sim}800^{\circ}C$, using humidified hydrogen as fuel, and air as oxidant.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.41 no.8
• /
• pp.869-874
• /
• 1992

The physical and electrical properties of TiN/TiSiS12T bilayer were studied. The TiN/TiSiS12T bilayer was formed by rapid thermal anneal in NHS13T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NHS13T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T bilayer depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T bilayer occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer TiSiS12T layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T bilayer was increased as the thickness of deposited Ti film increased.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.239.2-239.2
• /
• 2015

Graphene is a most interesting material due to its unique and outstanding properties. However, semi-metallic properties of graphene along with zero bandgap energy structure limit further application to optoelectronic devices. Recently, many researchers have shown that band gap can be induced in the Bernal stacked bilayer graphene. Several methods have been used for the controlled growth of the Bernal staked bilayer graphene, but it is still challenging to control the growth process. In this paper, we synthesize the large area Bernal stacked bilayer graphene using multi heating zone low pressure chemical vapor deposition (LPCVD). The synthesized bilayer graphenes are characterized by Raman spectroscopy, optical microscope (OM), scanning electron microscopy (SEM). High resolution transmission electron microscopy (HRTEM) is used for the observation of atomic resolution image of the graphene layers.

• Proceedings of the Korean Society For Composite Materials Conference
• /
• 2004.10a
• /
• pp.23-26
• /
• 2004

Ag/Ni multilayers with different bilayer thickness between 3 and 100 nm produced by DC magnetron puttering have been studied by cross-sectional TEM and nanoindentation. The micrograph shows perfect layered structure with sharp interfaces between Ag and Ni layers. Absolute hardness is calculated as a reference value to compare hardness of specimens regardless of indent depth. A hardness enhancement of nearly $100\%$ over the rule-of-mixtures values, calculated from the measured hardness of single Ag and Ni thin films, is observed. The hardness increases with decreasing bilayer thickness until 8nm. This enhancement shows a good agreement with Hall-Petch relation using grain size (one half of the bilayer thickness) confined within a layer. The deformation behavior can be explained by dislocation pile-up in smaller grains.