• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.276-276
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• 2010

Large-area micropatterned array of Co/Ni bilayer anti-dots was fabricated using photolithography and wet etching process. The surface morphology as well as the surface topography was checked by scanning electron microscopy and atomic force microscopy, whereas the magnetic properties were studied by magneto-optical Kerr effect (MOKE) and magnetic force microscopy (MFM). Systematic studies of the magnetic-reversal mechanism, the in-plane anisotropy and the switching field properties were carried out. To get a comprehensive knowledge about the domain configuration, we also employed OOMMF simulations. It was found from the MOKE measurements that a combined effect of configurational and the magneto-crystalline anisotropy simultaneously works in such micropatterned bilayer structures. In addition, the inclusion of holes in the uniform magnetic film drastically affected the switching field. The MFM images show well-defined domain structures which are periodic in nature. The micromagnetic simulations indicate that the magnetization reversal of such a structure proceeds by formation and annihilation of domain walls, which were equally manifested by the field-dependent MFM images. The observed changes in the magnetic properties are strongly related to both the patterning that hinders the domain-wall motion and to the magneto-anisotropic bilayered structure.

• Korean Journal of Veterinary Research
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• v.32 no.4
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• pp.543-553
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• 1992

Properties of unitary ATP-sensitive $K^+$ channels were studied using planar lipid bilayer technique. Vesicles were prepared from bullfrog (Rana catesbeiana) skeletal muscle. ATP-sensitive $K^+$ (K (ATP)) channels were identified by their unitary conductance and sensitivity to ATP. In the symmetrical solution containing 200mM KCI, 10mM Hepes, 1mM EGTA and pH 7.2, single K (ATP) channels showed a linear current-voltage relations with slight inward rectification. Slope conductance at reversal potential was $60.1{\pm}0.43$ pS(n=3)). Micromolar ATP reversibly inhibited the channel activity when applied to the cytoplasmic side. In the range of -50~＋50 mV, the channel activity was not voltage-dependent, but the channel gating within a burst was more frequent at negative voltage range. Varying the concentrations of external/internal KCl(mM) to 40/200, 200/200, 200/100 and 200/40 shifted reversal potentials to $-30.8{\pm}2.9$(n=3), $-1.1{\pm}2.7$(n=3), 10.5 and 30.6(mV), respecrivety. These reversal potentials were close to the expected values by the Nernst equation, indicating nearly ideal selectivity for $K^+$ over $Cl^-$. Under bi-ionic conditions of 200mM external test ions and 200mM internal $K^+$, the reversal potentials for each test ion/K pair were measured. The measured reversal potentials were used for the calculation of the releative permeability of alkali cations to $K^+$ ions using the Goldman-Hodgkin-Katz equation. The permeability sequence of 5 cations relative to $K^+$ was $K^+$(1), $Rb^+$(0.49), $Cs^+$(0.27), $Na^+$(0.027) and $Li^+$(0.021). This sequence was recognized as Eisenman's selectivity sequence IV. In addition, modelling the permeation of $K^+$ ion through ATP-sensitive $K^+$ channel revealed that a 3-barrier 2-site multiple occupancy model can reasonably predict the observed current-voltage relations.

• Korean Journal of Materials Research
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• v.28 no.5
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• pp.268-272
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• 2018

An $Al_2O_3/AlN$ bilayer deposited on GaN by atomic layer deposition (ALD) is employed to prepare $Al_2O_3/AlN/GaN$ metal-insulator-semiconductor (MIS) diodes, and their interfacial properties are investigated using X-ray photoelectron spectroscopy (XPS) with sputter etch treatment and current-voltage (I-V) measurements. XPS analyses reveal that the native oxides on the GaN surface are reduced significantly during the early ALD stage, indicating that AlN deposition effectively clelans up the GaN surface. In addition, the suppression of Al-OH bonds is observed through the ALD process. This result may be related to the improved device performance because Al-OH bonds act as interface defects. Finally, temperature dependent I-V analyses show that the barrier height increases and the ideality factor decreases with an increase in temperature, which is associated with the barrier inhomogeneity. A Modified Richardson plot produces the Richardson constant of $A^{**}$ as $30.45Acm^{-2}K^{-2}$, which is similar to the theoretical value of $26.4Acm^{-2}K^{-2}$ for n-GaN. This indicates that the barrier inhomogeneity appropriately explains the forward current transport across the $Au/Al_2O_3/AlN/GaN$ interface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.318-323
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• 2000

The intercalated compounds of alkylsulfonates into hydrated zinc were synthesized. From the high temperature powder X-ray diffraction (HTXRD), FT-IR, and molecular size, the temperature dependence of orientation for the intercalated alkylsulfonates were determined. In the temperatures range 1, alkylsulfonates were intercalated into hexa aqua zinc layer with the bilayer structure of $32.9^{\circ}$angle for ${Zn(H_2O_4]^{2+}[C_nH_{2n+1}SO_3]_2\;^-$. In the temperatures range 2, alkylsulfonates were intercalated into tetra aqua zinc layer with the bilayer structure of $55.2^{\circ}$angle for ${Zn(C_nH_{2n+1}SO_3)_2$. In the temperatures range 3, alkylsulfonates were directly bonded to zinc ion with the bilayer structure of $76.5^{\circ}$angle for ${Zn(C_nH_{2n+1}SO_3)_2$.

• Journal of the Korean Magnetics Society
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• v.13 no.4
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• pp.176-181
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• 2003

The magnetic domain walls at the edges of a large patterned and exchanged-biased NiO(10-60 nm)/NiFe(10 nm) bilayers and their motions with applied field were investigated by magnetic force microscopy. Three kinds of domain walls, namely, head-to-head zig-zag and tail-to-tail zig-zag Bloch walls and straight Neel walls were found at specific edges of the unidirectional biased NiO(30 nm)/NiFe(10 nm) bilayer having the exchange biasing field (H$\sub$ex/) of 21 Oe. No walls were observed for the strong exchange-biased bilayer (60 nm NiO, H$\sub$ex/ = 75 Oe), while the amplitude of the zig-zag domain increased with decreasing exchange biasing. This may be explained by mutual restraint between H$\sub$ex/ and the demagnetization field of edge. We similarly investigated the magnetization reversal process, the subsequent motion of the walls and identified the pinning and nucleation sites during reversal.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.956-960
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• 1998

The interfacial reaction between the CoINb bilayer and the $SiO_2$ substrate in the temperature range of $330^{\circ}C$-$800^{\circ}C$ in a vacuum has been investigated by X-ray photoelectron spectroscopy, glancing angle XRD, Auger Electron Spectroscopy and Atomic force microscopy. The Co and Nb were actively interdiffused at $600^{\circ}C$, and the layer inversion completed at $700^{\circ}C$. NbO was formed by interfacial reaction between the Nb interlayer and the $SiO_2$ substrate, while $Nb_20_5$ was formed on the surface by reaction of Nb with oxygen in the ambients. Free Si atoms obtained by the reaction between Nb and $SiO_2$ formed silicides like CoSi and $Nb_5Si_3$ by reacting with Co and Nb remnants. The sheet resistance of the Co/Nb bilayer increased substantially after annealing at $800^{\circ}C$. which is due to the agglomeration of the Co layer to reduce its surface energy.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.7-13
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• 2011

[ $L1_0$ ]phase FePd nano-dot structures were successfully fabricated on self-organized Fe/Au bilayers. With atomic force microscopy, it is determined that surface morphologies of initially flat Fe/Au bilayer films were agglomerated and transformed their shape into nano-dots structures with increasing annealing temperature. With this bilayer as a template, FePd multilayers were deposited at various temperatures, i.e. $300^{\circ}C$, $350^{\circ}C$, $400^{\circ}C$, and $450^{\circ}C$. Surface morphologies of FePd superlattice had a near resemblance to self-organized bilayer. According to X-ray diffraction results, it is confirmed that $L1_0$ superlattice structures of FePd were obtained from samples which were annealed above $350^{\circ}C$. Results of X-ray photoelectron spectroscopy depth-profile analysis showed that chemical composition is identical to deposition sequence. As a result, without additional etching processes, fabrication of chemically ordered FePd superlattice nano-dots was achieved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.6
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• pp.305-310
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• 2009

$TiO_2$ thin films consisting of positively charged poly (diallyldimethylammonium chloride) (PDDA) and negatively charged titanium (IV) bis (ammonium lactato) dihydroxide (TALH) were successfully fabricated on a poly (methyl methacrylate) (PMMA) by layer-by-layer (LBL) self-assembly method. By the measurement of quartz crystal microbalance (QCM), it was found that as the solution pH of TALH decreased, the deposition volume of TALH increased and the thickness of (PDDA/TALH) thin film coated on the surface of PMMA particles increased. The PMMA particles coated with the coating sequence of (PDDA/TALH)n showed the variation of color changes as a function of the number of bilayer. The number of bilayer (n) of (PDDA/TALH) thin films was 10 and 20, the values of $a^*$ and $b^*$ decreased from those of PMMA particles without coating films and the color changes was shifted to green and blue direction in the $a^*$, $b^*$ chromaticity diagram. And then, the number of n increased to 30 and 40, the values of $a^*$ and $b^*$ increased and the color changes was shifted to red and yellow direction, respectively. Finally the PMMA particles coated with $(PDDA/TALH)_{50}$ thin film showed a little same value of $a^*$ and $b^*$ with the PMMA particles without (PDDA/TALH) thin film.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1182-1189
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• 1998

High quality $TiN/TiSi_2$-bilayers were formed on the Si(100) substrate at room temperature and at $600^{\circ}C$ first by coevaporation of stoichiometric Si and Ti(Si:Ti = 2:1) fellowed by Ti reactive deposition in N, gas ambient, and in situ annealing in ultrahigh vacuum. Stoichiometric $Ti_{0.}N_{0.5}$, films with (111) texture and $C54-TiSi_2$ films were grown by annealing at temperatures above $700^{\circ}C$. $TiN/C54-TiSi_2$/Si(100) interface was clear and flat without agglomoration, and $CS4-TiSi_2$ film was epitxailly grown. The sheet resistance of the $TiN/TiSi_2$- bilayer decreased as the annealing temperature increased and about $2.5\omega/\textrm{cm}^2$ was obtained from the sample annealed over $700^{\circ}C$.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.159.2-159.2
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• 2007