• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.57-57
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• 2009

In this work, we carried out the variation of surface characteristics of organic polymer films by O2 plasma. The plasma diagnostics were performed by DLP(Double Langmuir Probe) and OES(Optical Emission Spectroscopy) measurements. Moreover, variation of surface characteristics were measured by AFM(Atomic Force Microscope), XPS(X-ray Photoelectron Spectroscopy), and contact angle goniometer. It was found that the etch rate of organic films was controlled by O radicals flux and dc bias voltage. And O radical density and dc bias voltage increased with increasing bias power. So, it was changed surface energy as a function of surface roughness and O/C ratio in organic films.

• 한국전기전자재료학회논문지
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• 제25권6호
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• pp.409-413
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• 2012

In this study, a substrate-bias assisted 2-step pulse programming method is proposed for realizing 4-bit/1-cell operation of the SONOS memory. The programming voltage and time are considerably reduced by this programming method than a gate-bias assisted 2-step pulse programming method and CHEI method. It is confirmed that the difference of 4-states in the threshold voltage is maintained to more than 0.5 V at least for 10-year for the multi-level characteristics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.58-58
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• 2010

Reactive or unstable adsorbates are often difficult to study spectroscopically. They may have, for instance, resonance states lying close to the Fermi level, inducing them to desorb or decompose by the probe itself, low-energy tunneling electrons. In order to overcome this limitation, we developed a novel method, which we call x-ramp scan. The method sweeps the bias voltage, with the simutaneous scan along the imaging direction, in a constant current mode. This mapping yields the tip-height variation as a function of bias, or Z(V), at nominally always fresh surface. We applied this method to the investigation of methanol-induced molecular features, attributed to methoxy, found on NiAl(110) surface. These were produced by methanol molecules deposited by a pulse injection method onto the metallic surface. Our study shows adsorbed methoxy are very reactive to the bias voltage, rendering the standard spectroscopy useless. Our new x-ramp scan shows that the decomposition of adsorbates occurs at the sample bias of 3.63 V, and proceeds with the lifetime of a few milliseconds. The details of the method will be provided at the discussion.

• The Korean Journal of Ceramics
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• 제3권3호
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• pp.159-162
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• 1997

Diamond was uniformly nucleated on large area Si(001) substrate (3cm$\times$4cm) using the low pressure magnetoactive microwave plasma chemical vapor deposition. $CH_4/He$ gas mixture was used as source gas in order to obtain high radical density in the nucleation enhancement step. $CH_3$radical density was measured by means of infrared laser absorption spectroscopy. The effect of substrate bias voltage on diamond nucleation was examined. The results showed that a suitable positive bias voltage appled to the substrate with respect to the chamber could enhance diamond nucleation while a negative bias voltages leaded to deposition of only non-diamond phase carbon.

• Journal of Magnetics
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• 제9권1호
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• pp.23-26
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• 2004

A magneto-current (MC) was investigated for magnetic tunnel transistor (MTT) with amorphous n-type Si film. A relative MC (more than 49.6%) was observed at an emitter-base bias voltage ($V_{EB}$) of 0.65 V at room temperature. Above a $V_{EB}$ of 0.70 V, however, a rapid decrease in MC was observed in the amorphous Si-based MTT. The collector current increasing and transfer ratio as emitter-base voltage were mainly due to the rapid creation electrons of conduction band states in the Si collector. This approach would make integration in various components and systems easier than a MTT grown on a semiconductor wafer.

• ETRI Journal
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• 제24권6호
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• pp.455-461
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• 2002

This paper reports on estimating the Schottky barrier height of small contacts using a thermionic-field emission model. Our results indicate that the logarithmic plot of the current as a function of bias voltage across the Schottky diode gives a linear relationship, while the plot as a function of the total applied voltage across a metal-silicon contact gives a parabolic relationship. The Schottky barrier height is extracted from the slope of the linear line resulting from the logarithmic plot of current versus bias voltage across the Schottky diode. The result reveals that the barrier height decreases from 0.6 eV to 0.49 eV when the thickness of the barrier metal is increased from 500 ${\AA}$ to 900 ${\AA}$. The extracted impurity concentration at the contact interface changes slightly with different Ti thicknesses with its maximum value at about $2.9{\times}10^{20}\;cm^{-3}$, which agrees well with the results from secondary ion mass spectroscopy (SIMS) measurements.

• Journal of Information Display
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• 제9권2호
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• pp.1-4
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• 2008

In this study, we investigate the capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor (MIS) capacitors consisting of pentacene, as an organic semiconductor, and polymeric insulators such as poly(4-vinylphenol) (PVP) orpolystyrene (PS) prepared by spin-coating process, to analyze the interfacial characteristics between pentacene and polymeric insulators. Compared with the device with PS, the MIS capacitor with PVP exhibited a pronounced shift in the flat-band voltage according to the bias sweep direction. This hysteric feature in the C-V characteristics is thought to be attributed to the trapped charges at the interface between pentacene and PVP owing to the hydrophilicity of PVP. From the experimental results, we can conclude that surface polarity of polymeric insulator has a critical effect on the interfacial properties, thereby affecting the bias stability of organic thin-film transistors.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
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• pp.370-374
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• 2002

This paper describes the design and fabrication of distributed analog phase shifter circuit. The phase shifter consist of coplanar waveguide(CPW) lines that are periodically loaded with voltage tunable (Ba,Sr)TiO$_3$ thin film interdigital(IDT) capacitors deposited by the pulsed laser deposition(PLD) on (001) MgO single crystals. The phase velocity on these IDT loaded CPW lines is a function of applied bias voltage, thus resulting in analog phase shifting circuits. The measured differential phase shift is 48$^{\circ}$ and the insertion loss decreases from -5㏈ to -3㏈ with increasing bias voltage from 0 to 40 V at 100㎐.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.55-58
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• 1996

A new type CuN/Cu/CuN thin film electrode material with high adhesion to glass was developed by the dc reactive planar magnetron sputtering system for the PDP(Plasma Display Panel). The adhesive force of the CuxN thin film was in the range of 20∼40(N) under the conditions of the N$_2$ partial pressure of 15%, discharge current of 70mA, discharge voltage of 450v and substrate bias voltage of -100V. The adhesive force was depended on the N$_2$ partial Pressure, discharge current and substrate bias voltage.

• 한국광학회지
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• 제7권2호
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• pp.167-173
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• 1996

본 논문에서 STN LCD의 구동전압에 따른 응답특성을 조사하였다. 네 가지 STN 액정 셀로써 여러 인가전압에 대한 스위칭 시간을 측정하였다. 또한 해석식으로 설명이 안되는 바이어스 전압의 스위칭 시간에 대한 영향을 실험을 통해 알아보았다. 그리고 수치해석적 방법으로 수한 계산결과와 비교하므로써, 계산결과가 바이어스 전압에 따른 실험결과와 비교적 잘 일치함을 알 수 있었다.