• Asian Pacific Journal of Cancer Prevention
• /
• v.14 no.3
• /
• pp.1697-1701
• /
• 2013

Background: Studies of associations between genetic polymorphism of glutathione S-transferase M1 (GSTM1) and glutathione S-transferase T1 (GSTT1) with risk of nasopharyngeal cancer (NPC) have generated conflicting results. Thus, a meta-analysis was performed to clarify the effects of GSTM1 and GSTT1 polymorphisms on the risk of developing NPC. Materials and Methods: A literature search in two electronic databases namely PubMed and EMBASE up to December 2012 was conducted and eligible papers were finally selected based on the inclusion and exclusion criteria. The pooled odds ratio (OR) and presence of heterogeneity and publication bias in those studies were evaluated. Results: A total of 9 studies concerning nasopharyngeal cancer were evaluated. Analyses of all relevant studies showed increased NPC risk to be significantly associated with the null genotypes of GSTMI (OR=1.43, 95%CI 1.24-1.66) and GSTT1 (OR=1.28, 95%CI=1.09-1.51). In addition, evidence of publication bias was detected among the studies on GSTM1 polymorphism. Conclusions: This meta-analysis demonstrated the GSTM1 and GSTT1 null genotypes are associated with an increased risk of NPC.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.3 no.1
• /
• pp.47-54
• /
• 2003

New efficiency enhancement techniques have been devised and implemented to InGaP/GaAs HBT MMIC power amplifiers for W-CDMA mobile terminals applications. Two different types of bias current control circuits that select the efficient quiescent currents in accordance with the required output power levels are proposed for overall power efficiency improvement. A dual chain power amplifier with single matching network composed of two different parallel-connected power amplifier is also introduced. With these efficiency enhancement techniques, the implemented MMIC power amplifiers presents power added efficiency (PAE) more than 14.8 % and adjacent channel leakage ratio(ACLR) lower than -39 dBc at 20 dBm output power and PAE more than 39.4% and ACLR lower than -33 dBc at 28 dBm output power. The average power usage efficiency of the power amplifier is improved by a factor of more than 1.415 with the bias current control circuits and even up to a factor of 3 with the dual chain power amplifier.

• International journal of advanced smart convergence
• /
• v.9 no.2
• /
• pp.20-27
• /
• 2020

Sound event detection in real-world environments suffers from the interference of non-stationary and time-varying noise. This paper presents an adaptive noise reduction method for sound event detection based on non-negative matrix factorization (NMF). In this paper, we proposed a deep learning model that integrates Convolution Neural Network (CNN) with Non-Negative Matrix Factorization (NMF). To improve the separation quality of the NMF, it includes noise update technique that learns and adapts the characteristics of the current noise in real time. The noise update technique analyzes the sparsity and activity of the noise bias at the present time and decides the update training based on the noise candidate group obtained every frame in the previous noise reduction stage. Noise bias ranks selected as candidates for update training are updated in real time with discrimination NMF training. This NMF was applied to CNN and Hidden Markov Model(HMM) to achieve improvement for performance of sound event detection. Since CNN has a more obvious performance improvement effect, it can be widely used in sound source based CNN algorithm.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.3
• /
• pp.106-109
• /
• 2011

We investigated the etching characteristics of titanium nitride (TiN) thin film in $BCl_3$/Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DC-bias voltage = -100 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to $Al_2O_3$ thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.19 no.8
• /
• pp.1571-1577
• /
• 1994

This paper is designed and implemented mixer of 12GHz/14GHz as up-conversion. Observation that harmonics and intermodulation power level varied by two signal power level and bias obtained operation points of mixer. Finally, optimum operation points shows that $P_{RF}$(radio signal frequency power level). $P_{LO}$(local oscillation power level) is below -30[dBm], -2[dBm] respectively. Simultaneously $V_{DS}$ is 2.7[V]and $V_{GS}$ is -0.2[V].

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.4
• /
• pp.166-169
• /
• 2010

In this study, we changed the etch parameters (gas mixing ratio, radio frequency [RF] power, direct current [DC]-bias voltage, and process pressure) and then monitored the effect on the $HfAlO_3$ thin film etch rate and the selectivity with $SiO_2$. A maximum etch rate of 108.7 nm/min was obtained in $Cl_2$ (3 sccm)/$BCl_3$ (4 sccm)/Ar (16 sccm) plasma. The etch selectivity of $HfAlO_3$ to $SiO_2$ reached 1.11. As the RF power and the DC-bias voltage increased, the etch rate of the $HfAlO_3$ thin film increased. As the process pressure increased, the etch rate of the $HfAlO_3$ thin films increased. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. According to the results, the etching of $HfAlO_3$ thin film follows the ion-assisted chemical etching.

• Journal of Magnetics
• /
• v.14 no.2
• /
• pp.66-70
• /
• 2009

The dynamic magneto-mechanical behaviors in a type of iron-nickel-based ferromagnetic alloy with constant elasticity were investigated as a function of both the DC bias magnetic field ($H_{dc}$) and the frequency. The rectangular plate-like samples were excited to vibrate at a half-wavelength, longitudinal resonance by an AC magnetic field superimposed with various $H_{dc}$. The experimental results found that the strain coefficient at resonance reached 819.34 nm/A and the effective mechanical quality factor ($Q_m$) was greater than 2000. The ratio of the maximum variation of the Young's modulus over $H_{dc}$ to the value of the Young's modulus at a zero bias field was only ${\sim}0.83%o$ because of the so-called constant elasticity. The resonant strain coefficients and $Q_m$ are strongly dependent on $H_{dc}$, which indicates a promising potential for use in DC and quasistatic magnetic field sensing.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.4
• /
• pp.144-147
• /
• 2011

In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a $N_2/BCl_3$/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the $SiO_2$ thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

• Journal of the Korean Vacuum Society
• /
• v.19 no.3
• /
• pp.230-235
• /
• 2010

In this paper, we controlled the deposition rate and reflective index with process conditions that are TCP power, gas flow ratio and bias for optical properties of $SiO_2$ thin film using TCP-CVD equipment. We obtained a excellent $SiO_2$ thin film which has a excellent uniformity (<1 [%]), deposition rate (0.28 [${\mu}m$/ min]) and reflective index (1.4610-1.4621) within 4" wafer with process conditions ($SiH_4:O_2$=50 : 100 [sccm], TCP power 1 [kW], bias 200 [W]) at [$300^{\circ}C$].

• Proceedings of the KIEE Conference
• /
• 2003.07c
• /
• pp.1571-1573
• /
• 2003

Diamond films including nanocystalline and graphite phase are grown by microwave plasma chemical vapor deposition using $N_2$ additives and negative substrate bias at growth step. The microstructure of the films is controlled by changing $N_2$ gas ratio and negative bias. Defects and grain boundaries between diamond and graphite are proposed to be crucial factors for forming the conducting path of electron emissions. The effect of growth parameters on the film microstructure are investigated by Raman spectroscopy and scanning electron microscopy(SEM). Electron emission characteristics are also examined in terms of the film growth conditions.