• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.639-642
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• 2005

A new dual-slope ramp (DSR) reset waveform is proposed to improve the dark room contrast ratio in AC-PDPs. The proposed reset waveform has two different voltage slopes during a ramp-up period. The first voltage slope is lower than the conventional ramp voltage slope, causing a reduction in the background luminance, whereas the second voltage slope is higher than the conventional ramp voltage slope, causing an increase in the background luminance. Thus, a bias voltage is also applied during the second voltage-slope period to adjust the background luminance and address discharge characteristics. As a result, the proposed dual-slope reset waveform can lower the background luminance, thereby improving the high dark room contrast ratio of an AC-PDP without reducing the address voltage margin

• International Journal of Industrial Entomology and Biomaterials
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• v.4 no.2
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• pp.117-120
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• 2002

Scelionid eggParasitoids Play an important role in biological control of some economically important pentatomids. Stink bug (Canthecona furcellatta Wolff,) is an important predator of Tasar silkworm larvae (Antheraea mylitta D.) and causes 30-40 percent loss in tasar silk industry. Psix striaticeps (Scelionid: Hymenoptera) has been found to be an important egg parasitoid. The parasitization potential of f striaticeps is mere than 60 percent and the sex ratio is female oriented. Studies indicate that the maintenance of existing scelionid population by avoiding harmful practices and the augmentation of scelionids either directly releasing them in the field or by indirectly making the field environment more favorable for them is an important aspect to control the pentatomid population in sericulture. Female bias sex ratio is advantageous to increase the parasitoid population in the field. 24-hour-old egg of stink bug and one-day old parasitoid is suitable for producing maximum progeny. 1 : 30 of parasitoid: host ratio is needed to regulate the estimated population in silkworm rearing field.

• Communications for Statistical Applications and Methods
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• v.31 no.3
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• pp.291-308
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• 2024

The current article discusses ratio type exponential estimators for estimating the mean of a finite population in sample surveys. The estimators uses robust regression's Huber M-estimation function, and their bias as well as mean squared error expressions are derived. It was campared with Kadilar, Candan, and Cingi (Hacet J Math Stat, 36, 181-188, 2007) estimators. The circumstances under which the suggested estimators perform better than competing estimators are discussed. Five different population datasets with a well recognized outlier have been widely used in numerical and simulation-based research. These thorough studies seek to provide strong proof to back up our claims by carefully assessing and validating the theoretical results reported in our study. The estimators that have been proposed are intended to significantly improve both the efficiency and accuracy of estimating the mean of a finite population. As a result, the results that are obtained from statistical analyses will be more reliable and precise.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.196-202
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• 2000

Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P1)/Ru/CoFe(P2)/FeMn/Ta on Si(100) substrate with natural oxide were prepared by dc magnetron sputtering system, and investigated on the magnetoresistance properties and effective exchange bias field. As the thickness of FeMn increased above 150 $\AA$, MR ratio was decreased due to the current shunting effect. As the thickness of free layer decreased below 40$\AA$, MR ratio was reduced rapidly. In case of 40 $\AA$ thick of free layer, spin valve film with a structure Si(100)/Ta(50 $\AA$)/NiFe(27 $\AA$)/CoFe(13 $\AA$)/Cu(26 $\AA$)/CoFe(30 $\AA$)/Ru(7 $\AA$)/CoFe(15 $\AA$)/FeMn(100 $\AA$)/Ta(50 $\AA$) exhibited maximum MR ratio of 7.5 % and an effective exchange bias field of 600 Oe, respectively. Thickness difference dependence in this synthetic spin valve structure on effective exchange field was investigated and interpreted by the analytical method. It should be noted that thickness increase of CoFe(P 1) and decrease of CoFe(P2) in synthetic antiferromagnet leaded to the decrease in effective exchange bias field by experimentally and analytically.

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1720-1725
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• 2015

The performance of the AlGaN/GaN MSM-2DEG varactor with different dielectric films deposited by the E-beam deposition is investigated in detail. The capacitance swing and the capacitance ratio of the varactor without dielectric film as well as with, SiO₂, Gd₂O₃, and Si₃N₄ films, respectively, are determined by electrodes of varying areas. The maximum capacitance, the minimum capacitance and the capacitance ratios are proportional to the increasing of the electrode areas. The capacitance ratio determined by the maximum and the minimum capacitance is found to be 18.35 (with Si₃N₄ dielectric film) and 149.51 (without dielectric film), respectively. The transition voltages of the fabricated varactors are almost the same for a bias voltage of about ±5 V and leakage current can be lower three orders of magnitude while the varactors with dielectric films. The tunability of the capacitance ratio makes the AlGaN/GaN MSM-2DEG varactor with a dielectric film highly useful in multirange applications of a surge free preamplier.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.24-24
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• 2003

Metallic magnetoelectronic devices have studied intensively and extensively for last decade because of the scientific interest as well as great technological importance. Recently, the scientific activity in spintronics field is extending to the hybrid devices using ferromagnetic/semiconductor heterostructures and to new ferromagnetic semiconductor materials for future devices. In case of the hybrid device, conductivity mismatch problem for metal/semiconductor interface will be able to circumvent when the device operates in ballistic regime. In this respect, spin-valve transistor, first reported by Monsma, is based on spin dependent transport of hot electrons rather than electron near the Fermi energy. Although the spin-valve transistor showed large magnetocurrent ratio more than 300%, but low transfer ratio of the order of 10$\^$-5/ prevents the potential applications. In order to enhance the collector current, we have prepared magnetic tunneling transistor (MTT) with single ferromagnetic base on Si(100) collector by magnetron sputtering process. We have changed the resistance of tunneling emitter and the thickness of baser layer in the MTT structure to increase collector current. The high transfer ratio of 10$\^$-4/ range at bias voltage of more than 1.8 V, collector current of near l ${\mu}$A, and magnetocurrent ratio or 55% in Si-based MTT are obtained at 77K. These results suggest a promising candidate for future spintronic applications.

• 제어로봇시스템학회:학술대회논문집
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• 2004.08a
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• pp.1561-1564
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• 2004

A CMOS-based Electronically Tunable Capacitance Multipliers, which can be magnified the value of a grounded unit capacitance, is presented in this article. The multiplication factor is varied by the ratio of the bias currents. The proposed circuit is simple, small in size and suitable for implementing in standard CMOS process. PSPICE simulation results demonstrating the characteristics of the proposed circuit are included.

• Corrosion Science and Technology
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• v.2 no.5
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• pp.238-242
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• 2003

The characteristics of Ru etching using $O_2/Cl_2$ plasmas were investigated by employing inductively coupled plasma (ICP) etcher. The changes of Ru etch rate, Ru to $SiO_2$ etch selectivity and Ru electrode etching slope with the gas flow ratio, bias power, total gas flow rate, and source power were scrutinized. A high etching slope (${\sim}86^{\circ}$) and a smooth surface after etching was attained using $O_2/Cl_2$ inductively coupled plasma.

• Communications for Statistical Applications and Methods
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• v.6 no.2
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• pp.621-634
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• 1999

Consider the several methods of constructing interval for relative ration from two independent binomial samples. The special interests are gives in the cases of low rates and small samples. bias-corrected and accelerated bootstrap method is proposed to overcome are the non-efficiency of current methods based on asymptotic resuts. Simulation studies are presented to demonstrate the performance of the proposed method.

• 제어로봇시스템학회:학술대회논문집
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• 2002.10a
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• pp.32.3-32
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• 2002

We analyze the effect of main inertial sensor errors such as, misalignment, scale factor error and bias on the performance of modified sequential probability ratio test (SPRT) for sequential fault detection and isolation (FDI). The inertial sensor errors cause the modified SPRT method to give false alarm. We use a two-stage KF to obtain a modified parity vector with which the inertial sensor errors can be removed and thus modified SPRT method can be used regardless of inertial sensor errors.