• Korean Journal of Adult Nursing
• /
• v.28 no.1
• /
• pp.13-29
• /
• 2016

Purpose: This study was performed to evaluate the effects of non-pharmacological interventions on sleep disturbance amongst adults aged 55 and above. Methods: PubMed, Cochrane Library, EMBASE, CINAHL and several Korean databases were searched. The main search strategy combined terms including non-pharmacological interventions and presence of insomnia. Non-pharmacological interventions included cognitive behavioral therapy, auricular acupuncture, aromatherapy, and emotional freedom techniques. Methodological quality was assessed using Cochrane's Risk of Bias for randomized studies and Risk of Bias Assessment tool for non randomized studies. Data were analyzed by the RevMan 5.3 program of Cochrane Library. Results: Sixteen clinical trials met the inclusion criteria with a total of 962 participants. Non-pharmacological interventions was conducted for a mean of 5.5 weeks, 7.7 sessions, and an average of 70 minutes per session. The effects of non-pharmacological interventions on sleep quality (ES=-1.18), sleep efficiency (ES=-1.14), sleep onset latency (ES=-0.88), awakening time after sleep onset (ES=-0.87), and sleep belief (ES=-0.71) were significant, and their effect sizes were ranged from moderate to large. However, the effects on total sleep time and insomnia severity were not significant. Conclusion: The findings of the current study suggest that non-pharmacological interventions have a positive impact on attitudes and beliefs about sleep, sleep quality, sleep duration, and sleep efficiency. Therefore, the findings of the study provide an evidence to incorporate various non-pharmacological interventions into nursing practice to improve both sleep quality and quantity in patients with insomnia.

• Asian Pacific Journal of Cancer Prevention
• /
• v.16 no.8
• /
• pp.3233-3239
• /
• 2015

Background: Whether depression causes increased risk of the development of breast cancer has long been debated. We conducted an updated meta-analysis of cohort studies to assess the association between depression and risk of breast cancer. Materials and Methods: Relevant literature was searched from Medline, Embase, Web of Science (up to April 2014) as well as manual searches of reference lists of selected publications. Cohort studies on the association between depression and breast cancer were included. Data abstraction and quality assessment were conducted independently by two authors. Random-effect model was used to compute the pooled risk estimate. Visual inspection of a funnel plot, Begg rank correlation test and Egger linear regression test were used to evaluate the publication bias. Results: We identified eleven cohort studies (182,241 participants, 2,353 cases) with a follow-up duration ranging from 5 to 38 years. The pooled adjusted RR was 1.13(95% CI: 0.94 to 1.36; $I^2=67.2%$, p=0.001). The association between the risk of breast cancer and depression was consistent across subgroups. Visual inspection of funnel plot and Begg's and Egger's tests indicated no evidence of publication bias. Regarding limitations, a one-time assessment of depression with no measure of duration weakens the test of hypothesis. In addition, 8 different scales were used for the measurement of depression, potentially adding to the multiple conceptual problems concerned with the definition of depression. Conclusions: Available epidemiological evidence is insufficient to support a positive association between depression and breast cancer.

• Journal of Surface Science and Engineering
• /
• v.46 no.4
• /
• pp.139-144
• /
• 2013

c-BN(cubic boron nitride) is known to have extremely high hardness next to diamond, as well as very high thermal and chemical stability. The c-BN in the form of film is useful for wear resistant coatings where the application of diamond film is restricted. However, there is less practical application because of difficult control of processing variables for synthesis of c-BN film as well as unclear mechanism on formation of c-BN. Therefore, in the present study, the structural characterization of c-BN thin film were investigated using $B_4C$ target in r.f. magnetron sputtering system as a function of processing variables. c-BN films were coated on Si(100) substrate using $B_4C$ (99.5% purity). The mixture of nitrogen and argon was used for carrier gas. The deposition processing conditions were changed with substrate bias voltage, substrate temperature and base pressure. Fourier transform infrared microscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used to analyze crystal structures and chemical binding energy of the films. In the case of the BN film deposited at room temperature, c-BN was formed in the substrate bias voltage range of -400 V~ -600 V. Less c-BN fraction was observed as deposition temperature increased and more c-BN fraction was observed as base pressure increased.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.110-110
• /
• 2010

현재 박막 트랜지스터는 비정질 실리콘 기반의 개발이 주를 이루고 있으며, 이 비정질 실리콘은 성막공정이 간단하고 대면적에 용이하지만 전기적인 특성이 우수하지 않기 때문에 디스플레이의 적용에 어려움을 겪고 있다. 이에 따라 poly-Si을 이용한 박막 트랜지스터의 연구가 진행되고 있는데, 이는 공정온도가 높고, 대면적에의 응용이 어렵다. 따라서 앞으로 저온 공정이 가능하며 대면적 응용이 용이한 박막 트랜지스터의 연구가 필수적이다. 한편 최근 박막 트랜지스터의 채널층으로 사용되는 물질에는 oxide 기반의 ZnO, SnO2, In2O3 등이 주로 사용되고 있고, 보다 적합한 채널층을 찾기 위한 연구가 많이 진행되어 왔다. 최근 Hosono 연구팀에서 IGZO를 채널층으로 사용하여 high mobility, 우수한 on/off ratio의 특성을 가진 소자 제작에 성공함으로써 이를 시작으로 IGZO의 연구 또한 세계적으로 활발한 연구가 이루어지고 있다. 특히, ZnO는 wide band gap (3.37eV)을 가지고 있어 적외선 및 가시광선의 투과율이 좋고, 전기 전도성과 플라즈마에 대한 내구성이 우수하며, 낮은 온도에서도 성막이 가능하다는 특징을 가지고 있다. 그러나 intrinsic ZnO 박막은 bias stress 같은 외부 환경이 변했을 경우 전기적인 성질의 변화를 가져올 뿐만 아니라 고온에서의 공정이 불안정하다는 요인을 가지고 있다. ZnO의 전기적인 특성을 개선하기 위해 본 연구에서는 hafnium을 doping한 ZnO을 channel layer로 소자를 제작하고 전기적 특성을 평가하였다. 이를 위해 DC magnetron sputtering을 이용하여 ZnO 기반의 박막 트랜지스터를 제작하였다. Staggered bottom gate 구조로 ITO 물질을 전극으로 사용하였으며, 제작된 소자는 semiconductor analyzer를 이용하여 출력특성과 전이 특성을 평가하였으며, ZnO channel layer 증착시 hafnium이 도핑 되는 양을 조절하여 소자를 제작한 후 intrinsic ZnO의 소자 특성과 비교 분석하였다. 그 결과 hafnium을 doping 시킨 소자의 field effect mobility가 $6.42cm^2/Vs$에서 $3.59cm^2/Vs$로 낮아졌지만, subthreshold swing 측면에서는 1.464V/decade에서 0.581V/decade로 intrinsic ZnO 보다 좋은 특성을 나타냄을 알 수 있었다. 그리고 intrinsic ZnO의 경우 외부환경에 대한 안정성 문제가 대두되고 있는데, hafnium을 도핑한 ZnO의 경우 temperature, bias temperature stability, 경시변화 등의 다양한 조건에서의 안정성이 확보된다면 intrinsic ZnO 박막트랜지스터의 문제점을 해결할 수 있는 물질로 될 것이라고 기대된다.

• Fashion & Textile Research Journal
• /
• v.10 no.6
• /
• pp.989-996
• /
• 2008

The purpose of this study is to provide the basic knowledge for the pattern development of a flared skirt. Two flat pattern (FP) methods, the concentric circle method and the corrected concentric circle method, and a draping were used for pattern making. Using these patterns, skirts were made with lengthwise grain in the centerline. The influence of pattern making method on the silhouette of the flared skirt was evaluated by the hemlines formed at the skirt worn in a dress form. Moreover, the combined influence of pattern making method and cutting direction on the silhouette of the flared skirt was examined with the draping pattern (DP) skirt and a FP skirt with $45^{\circ}$ bias grain in the centerline. The DP skirt had more uniform nodes and formed a stable wave form than the FP skirts throughout the whole hemlines. The number of nodes was reduced with lining in the two FP skirts, whereas the number of nodes was not changed in the DP skirt. The unit wave form of all the skirts by three patterns showed long loop form, and the slope angles of the unit wave form of the two FP skirts were higher than that of the DP skirt. The silhouette of the flared skirt was highly influenced by the shape of the waist circumference line in patterns. The DP skirt with lengthwise grain in the centerline showed good silhouette with uniform nodes and high marking efficiency, compared to the FP skirt with $45^{\circ}$ bias grain in the centerline.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.199-199
• /
• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.170-170
• /
• 2012

최근 주목받고 있는 amorphous InGaZnO (a-IGZO) thin film transistors (TFTs)는 수소가 첨가된 비정질 실리콘 TFT (a-Si;H)에 비해 비정질 상태에서도 높은 이동도와 뛰어난 전기적, 광학적 특성에 의해 큰 주목을 받고 있다. 또한 넓은 밴드갭에 의해 가시광 영역에서 투명한 특성을 보이고, 플라스틱 기판 위에서 구부러지는 성질에 의해 플랫 패널 디스플레이나 능동 유기 발광 소자 (AM-OLED), 투명 디스플레이에 응용되고 있다. 하지만, 실제 디스플레이가 동작하는 동안 스위칭 TFT는 백라이트 또는 외부에서 들어오는 빛에 지속적으로 노출되게 되고, 이 빛에 의해서 TFT 소자의 신뢰성에 악영향을 끼친다. 또한, 디스플레이가 장시간 동안 동작 하면 내부 온도가 상승하게 되고 이에 따른 온도에 의한 신뢰성 문제도 동시에 고려되어야 한다. 특히, 실제 AM-LCD에서 스위칭 TFT는 양의 게이트 전압보다 음의 게이트 전압에 의해서 약 500 배 가량 더 긴 시간의 스트레스를 받기 때문에 음의 게이트 전압에 대한 신뢰성 평가는 대단히 중요한 이슈이다. 스트레스에 의한 문턱 전압의 변화는 게이트 절연막과 반도체 채널 사이의 계면 또는 게이트 절연막의 벌크 트랩에 의한 것으로 게이트 절연막의 선택에 따라서 신뢰성을 효과적으로 개선시킬 수 있다. 본 연구에서는 적층된 $Si_3N_4/SiO_2$ (NO 구조) 이중층 구조를 게이트 절연막으로 사용하고, 완충층의 역할을 하는 $SiO_2$막의 두께에 따른 소자의 전기적 특성 및 신뢰성을 평가하였다. a-IGZO TFT 소자의 전기적 특성과 신뢰성 평가를 위하여 간단한 구조의 pseudo-MOS field effect transistor (${\Psi}$-MOSFET) 방법을 이용하였다. 제작된 소자의 최적화된 $SiO_2$ 완충층의 두께는 20 nm이고 $12.3cm^2/V{\cdot}s$의 유효 전계 이동도, 148 mV/dec의 subthreshold swing, $4.52{\times}10^{11}cm^{-2}$의 계면 트랩, negative bias illumination stress에서 1.23 V의 문턱 전압 변화율, negative bias temperature illumination stress에서 2.06 V의 문턱 전압 변화율을 보여 뛰어난 전기적, 신뢰성 특성을 확인하였다.

• Journal of Sensor Science and Technology
• /
• v.24 no.3
• /
• pp.181-187
• /
• 2015

The magnetoelectric characteristics on layered $Fe_{78}B_{13}Si_9/PZT$ and $Fe_{78}B_{13}Si_9/PZT/Fe_{78}B_{13}Si_9$($t_m=0.017$, 0.034mm) composites by epoxy bonding for magnetic field sensor were investigated in the low-frequency range and resonance frequency range. The optimal bias magnetic field $H_{dc}$ of these samples was about 23~63 Oe range. The Me coefficient of $Fe_{78}B_{13}Si_9/PZT/Fe_{78}B_{13}Si_9(t_m=0.034mm)$ composites reaches a maximum of $186mV/cm{\cdot}Oe$ at $H_{dc}=63Oe$, f=50 Hz and a maximum of $1280mV/cm{\cdot}Oe$ at $H_{dc}=63Oe$, resonance frequency $f_r=95.5KHz$. The output voltage shows linearity proportional to ac fields $H_{ac}$ and is about U=0~130.6 mV at $H_{ac}=0{\sim}7Oe$, f=50 Hz, U=0~12.4 V at $H_{ac}=0{\sim}10Oe$, $f_r=95.5KHz$(resonance frequency). The optimal frequency(f=50 Hz) of this sample is around the utility ac frequency(f=60 Hz). Therefore, this sample will allow for ac magnetic field sensor at utility frequency and low bias magnetic fields $H_{dc}$.

• Journal of Ginseng Research
• /
• v.34 no.4
• /
• pp.342-347
• /
• 2010

Ginseng is one of the most-widely used herbal remedies. This systematic review evaluates the current evidence for its use in the reducing blood pressure (BP) in patients with hypertension. Systematic searches of 12 electronic databases were conducted without language restrictions. All randomized clinical trials (RCTs) of ginseng as a treatment for hypertension were candidates for inclusion. Methodological quality was assessed using the Cochrane risk of bias. Five RCTs met the inclusion criteria. The risk of bias was low in most of the trials. Four of the included RCTs compared the effectiveness of ginseng to placebo. The meta-analysis of these data failed to show a statistically significant acute effect on systolic BP (SBP) or diastolic BP (DBP). However, subgroup analyses showed beneficial effects of Korean red ginseng (KRG) on both SBP (n=54, mean difference [MD], -6.52; 95% confidence interval [CI], -9.99 to -3.04; p=0.0002) and DBP (n=54, MD, -5.21; 95% CI, -7.90 to -2.51; p=0.0001). Two RCTs tested the long-term effects of ginseng for BP for 24hours. One of these trials failed to show any benefits of KRG compared to no treatment, and the other failed to show superior effects of North American ginseng compared to placebo. Adverse events with ginseng were none in one trial or not assessed. Collectively, these RCTs provide limited evidence for the acute effectiveness of KRG in the treatment of high BP. The total number of RCTs included in the analysis and the total sample size were insufficient to draw definitive conclusions. More rigorous studies are warranted.

• Current Optics and Photonics
• /
• v.4 no.5
• /
• pp.434-440
• /
• 2020

Based on single-mode rate equations, we present an improved equivalent-circuit model for distributed-feedback (DFB) lasers that accounts for the effects of parasitic parameters and nonradiative recombination. This equivalent-circuit model is composed of a parasitic circuit, an electrical circuit, an optical circuit, and a phase circuit, modeling the circuit equations transformed from the rate equations. The validity of the proposed circuit model is verified by comparing simulation results to measured results. The results show that the slope efficiency and threshold current of the model are 0.22 W/A and 13 mA respectively. It is also shown that increasing bias current results in the increase of the relaxation-oscillation frequency. Moreover, we show that the larger the bias current, the lower the frequency chirp, increasing the possibility of extending the transmission distance of an optical-fiber communication system. The results indicate that the proposed circuit model can accurately predict a DFB laser's static and dynamic characteristics.