• Nuclear Engineering and Technology
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• v.28 no.5
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• pp.467-481
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• 1996

An integrated framework of modeling the human operator cognitive behavior during nuclear power plant accident scenarios is presented. It incorporates both plant and operator models. The basic structure of the operator model is similar to that of existing cognitive models, however, this model differs from those existing ones largely in too aspects. First, using frame and membership function, the pattern matching behavior, which is identified as the dominant cognitive process of operators responding to an accident sequence, is explicitly implemented in this model. Second, the non-task-related human cognitive activities like effect of stress and cognitive biases such as confirmation bias and availability bias, are also considered. A computer code, OPEC is assembled to simulate this framework and is actually applied to an SGTR sequence, and the resultant simulated behaviors of operator are obtained.

• Journal of the Korean Vacuum Society
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• v.3 no.2
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• pp.179-185
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• 1994

음극에 DLC 필름이 놓여져 있는 용량결합형의 RF 플라즈마 장치에서 Ar가스에 의한 방전에서 발생된 입자의 분포를 레이져 산란에 의하여 관측하였다. 발생된 입자들은 플라즈마와 sheath의 경계면 에서 높은 밀도의 구름을 이루었으며 시간에 따라 주기적인 분포의 변화가 반복되었다, 입자 구름의 발 생은 플라즈마 물성의 변화를 야기하였으며 그 결과로 심한 self-bias 전위의 감소현상이 관측되었다. 입자 구름분포의 시간에 따른 변화와 같은 주기의 self-bias 플라즈마전위의 진동현상이 가열된 fast-scanning langmuir 탐침에 의하여 관측되었다. 이결과는 입자 표면에로의 음전하 누적에 따른 전체 음전하의 이동도 감소에 의한 것으로 해석된다. 또한 방출 분광법에 의하여 입자오염상태의 Ar 플라즈 마와 정상상태의 Ar 플라즈마의 방출 선세기의 변화를 관측하였는데 입자구름 오염시의 2차전자 차폐 현상에 의해 높은 문턱 에너지를 가진 Ar II 선의 세기 감소현상이 나타났다.

• Journal of Astronomy and Space Sciences
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• v.23 no.2
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• pp.161-166
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• 2006

In this paper, we describe the RLG current stabilizer circuit for attitude control in the satellite. The RLG makes use of the Sagnac effect within a resonant of a HeNe laser. The difference between two discharge currents causes one of the gyro bias errors. The theoretical background and current stabilizer are introduced. It is verified that the circuit designed is applicable to the test of input voltage and temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1185-1188
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• 2007

The address discharge characteristics by the various scan-low and common-bias voltages are investigated based on measured address discharge time lags and $V_t$ close-curve analysis. The scan-low voltages are changed under the same voltage difference between the X and Y electrodes during an address period. As the voltage difference between the scan and address electrodes is increased during an address period, the address discharge time lag is shortened but the background luminance is increased. It is found that the improved address discharge characteristics is caused by the effect of the higher external applied voltage during an address period than the accumulated wall charges during a reset period and the high background luminance can be prevented by applying an address-bias voltage during a rising-ramp period and low reset voltage.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.285-289
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• 2015

We prepared silver Schottky contacts to O-polar and nonpolar m-plane bulk ZnO wafers. Then, by considering various transport models, we performed a comparative analysis of the current transport properties of Ag/bulk ZnO Schottky diodes, which were measured at 300, 200, and 100 K. The fitting of the forward bias current-voltage (I-V) characteristics revealed that the tunneling current is dominant as the transport component in both the samples. Compared to thermionic emission (TE), a stronger contribution of tunneling current was observed at low temperature. The reverse bias I-V characteristics were well fitted with the thermionic field emission (TFE) in both the samples. The presence of acceptor-like adsorbates, such as O₂ and H₂O, modulated the surface conductive state of ZnO, thereby affecting the tunneling effect. The degree of activation/passivation of acceptor-like adsorbates might be different in both the samples owing to their different surface morphologies and surface defects (e.g., oxygen vacancies).

• 한국태양에너지학회:학술대회논문집
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• 2008.04a
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• pp.241-246
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• 2008

In this paper, we analyze the I-V curve and hot-spot phenomenon caused by solar cells' serial and parallel connected circuit. The mis-match loss of parallel interconnection with low Isc string decrease lower than serially interconnected one and temperature caused by hot-spot does. Also, mis-match loss of parallel interconnection with low Voc string increase more than serially interconnected one. The string having low Voc happened hot-spot phenomenon when open circuit. The bad solar cell in string gives revere bias to good solar cell and make hot-spot phenomenon. If we consider the mis-match loss, when designing PV module and array. the efficiency of PV system might increase.

• Tribology and Lubricants
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• v.11 no.1
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• pp.37-43
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• 1995

Sputtering parameters such as N$_{2}$ flow percentage and bias voltage in reactive TiN film deposition by RF magnetron sputtering system were selected to investigate the effects of sputtering deposition conditions on tribological characteristics of TiN films. Wear scar of the steel ball damaged by TiN films was measured by SEM to understand wear behavior of deposited TiN films. Crystallization and induced strain of TiN were detected by XRD. Wear mode changed from plastic to brittle with increasing N$_{2}$ ratio. Wear scar by sliding with TiN film deposited at around 27% N$_{2}$ ratio was maximum. The results indicate that bias voltage affects tribological behavior by formation of high density film and internal stress.

• Journal of Positioning, Navigation, and Timing
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• v.9 no.3
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• pp.221-227
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• 2020

In this paper, the Iterated Consider Extended Kalman Filter (ICEKF) is proposed for bearing-only localization of GNSS interference to improve the estimation performance and filter consistency. The ICEKF is an extended version of Consider KF (CKF) for Iterated EKF (IEKF) to consider an effect of bearing measurement bias error to filter covariance. The ICEKF can mitigate the EKF divergence problem which can occur when linearizing the nonlinear bearing measurement by a large initial state error. Also, it can mitigate filter inconsistency problem of EKF and IEKF which can occur when a weakly observable bearing measurement bias error state is not included in filter state vector. The simulation result shows that the localization error of the ICEKF is smaller than the EKF and IEKF, and the Root Mean Square (RMS) estimation error of ICEKF matches the covariance of filter.

• Journal of Institute of Control, Robotics and Systems
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• v.16 no.12
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• pp.1137-1142
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• 2010

This paper studied the speech parameters less affected by the human emotion for the development of the robust speech recognition system. For this purpose, the effect of emotion on the speech recognition system and robust speech parameters of speech recognition system were studied using speech database containing various emotions. In this study, mel-cepstral coefficient, delta-cepstral coefficient, RASTA mel-cepstral coefficient and frequency warped mel-cepstral coefficient were used as feature parameters. And CMS (Cepstral Mean Subtraction) method were used as a signal bias removal technique. Experimental results showed that the HMM based speaker independent word recognizer using vocal tract length normalized mel-cepstral coefficient, its derivatives and CMS as a signal bias removal showed the best performance of 0.78% word error rate. This corresponds to about a 50% word error reduction as compare to the performance of baseline system using mel-cepstral coefficient, its derivatives and CMS.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.10
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• pp.71-78
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• 1994

We have developed GaAs power metal semiconductor field effect transistors (MESFETs) for 4.7V operation under 900 MHz using a low-high deped structures grown by molecular beam epitaxy (MBE). The fabricted MESFETs with a gate widty of 7.5 mm and a gate length of 1.0.mu.m show a saturated drain current (Idss) of 1.7A and an uniform transconductance (Gm) of around 600mS, for gate bias ranged from -2.4 V to 0.5 V. The gate-drain breakdown voltage is measured to be higher than 25 V. The measured rf characteristics of the MESFETs at a frequency of 900 MHz are the output power of 31.4 dBm and the power added efficiency of 63% at a drain bias of 4.7 V.