• 한국세라믹학회지
• /
• 제40권10호
• /
• pp.921-924
• /
• 2003

A current-voltage relation for Positive Temperature Coefficient of Resistance (PTCR) ceramic was derived and compared with the experimental data. The new current-voltage relation was developed based on Heywangs double Schottky barrier model and a bias distribution across the grain boundary. The voltage limitation V < 4${\Phi}$$\sub$b/ suggested by Heywang is no longer necessary in the new expression for the voltage dependence of the resistance. The pulsed voltages were applied to the PTCR ceramic specimen in order to avoid possible temperature variation during the measurement.

• Journal of Magnetics
• /
• 제16권2호
• /
• pp.97-100
• /
• 2011

Bilayers of soft NiFe (150 nm-420 nm) on hard Ni (150 nm) were prepared by electrodeposition. The process of magnetization reversal in the NiFe/Ni bilayers was then investigated. The hysteresis loop generated by a magnetization reversal of soft NiFe under a positive saturation state of a hard Ni layer shows a shift along the negative field axis, which is clear evidence for the exchange spring effect in the NiFe/Ni bilayers. The dependence of the coercive field $H_c$ and exchange bias field Hex on the thickness of the NiFe layer was also investigated. As the NiFe thickness increases from 150 nm to 420 nm, both $H_c$ and $H_{ex}$ decrease rapidly from $H_c$= 51.7 Oe and $H_{ex}$ = 12.2 Oe, and saturate to $H_c$ = 5.8 Oe and $H_{ex}$ = 3.5 Oe.

• 한국전기전자재료학회논문지
• /
• 제11권10호
• /
• pp.918-923
• /
• 1998

Poly-silicon thin film transistors were fabricated on quartz substrates by high temperature processes. Electrical characteristics were measured and compared for 3 transistor structures of Standard Inverted Gate(SIG), Lightly Doped Drain(LDD), and Dual Gate(DG). Leakage currents of DG and LDD TFT's were smaller that od SIG transistor, while ON-current of LDD transistor is much smaller than that of SIG and DG transistors. Temperature dependence of the leakage currents showed that SIG and DG TFT's had thermal generation current at small drian bias and Frenkel-Poole emission current at hight gate and drain biases, respectively. In case of LDD transistor, thermal generation was the dominant mechanism of leakage current at all bias conditions. It was found that the leakage current was closely related to the reduction of the electric field in the drain depletion region.

• Journal of Information Display
• /
• 제6권4호
• /
• pp.6-10
• /
• 2005

The dependence of hysteresis characteristics in low temperature poly-Si (LTPS) thin film transistors (TFTs) on the gate-source voltage (Vgs) or the drain-source voltage (Vds) bias is investigated and discussed. The hysteresis levels in both p-type and n-type LTPS TFTs are independent of Vds bias but increase as the sweep range of Vgs increases. It has been found that the hysteresis in both p-type and n-type LTPS TFTs originated from charge trapping and de-trapping in the channel region rather than at the source/drain edges.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.149-152
• /
• 2000

AC impedance measurements on poly-p-phenylenevinylene (PPV) LEDs in the frequency range between 10 Hz and 10$\^$6/ Hz were carried out. The complex-plane impedance spectra indicate that PPV devices can be represented by equivalent circuits that corresponds to the bulk and interfacial regions at high and low frequencies, respectively. As a result of complex impedance analysis through the separation of bulk and interfacial region impedances, increase of forward bias in Al/PPV/ITO devices gave rise to relative decrease of the interfacial region impedance. Above the electric field of 10$\^$6/ V/cm the PPV device showed a space charge limited current (SCLC) conduction. The dependence of the transport mechanism and dielectric properties on the applied bias voltage is discussed.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1995년도 하계학술대회 논문집 C
• /
• pp.1205-1208
• /
• 1995

The optically-gated p-i-n diode switches have been fabricated with gold-compensated silicon. The turn-on and turn-off delay times and the rise and fall times were measured as a function of optical power level, bias, and pulse width. The turn-on characteristics shows a strong dependence an optical pulse power and a delay time(${\delta}{\iota}$) between two pulses, but a weak dependence on the width of optical pulse. Actually there is no turn-off delay in gold-doped p-i-n switches and the fall time is negligible.

• 한국초전도ㆍ저온공학회논문지
• /
• 제19권1호
• /
• pp.26-29
• /
• 2017

We studied the distribution of the current density and its magnetic-field dependence in GdBCO coated conductors with AC bias currents using low temperature scanning Hall probe microscopy. We selectively measured magnetic field profiles from AC signal obtained by Lock-in technique and calculated current distributions by inversion calculation. In order to confirm the AC measurement results, we applied DC current corresponding to RMS value of AC current and compared distribution of AC and DC transport current. We carried out the same measurements at various external DC magnetic fields, and investigated field dependence of AC current distribution. We notice that the AC current distribution unaffected by external magnetic fields and preserved their own path on the contrary to DC current.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
• /
• pp.1108-1111
• /
• 2007

OLED driving voltage shift can reduce the OLED display lifetime, especially for digitally driven AMOLED. By operating OLED at high frequency, we were able to suppress OLED voltage shift degradation, expecting improved AMOLED lifetime. We describe frequency dependence of voltage shift obtained from bias stress test of OLED.

• 대한전기학회논문지
• /
• 제44권7호
• /
• pp.901-907
• /
• 1995

The switching characteristics of As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film were investigated under d.c. bias. And the frequency dependence of the conductivity was analysed with regard to the temperature dependence, in order to find the physical properties of the As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film ; a characteristic relaxation time (.tau.$_{0}$ ), the spatial density of defect states (N), and the localized wavefunction (.alpha.$^{-1}$ ). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively. The threshold voltage is increased as the thickness and the electrode distance is increased, while the threshold voltage is decreased in proportion to the increased annealing time and temperature.

• Journal of Electrochemical Science and Technology
• /
• 제4권4호
• /
• pp.153-156
• /
• 2013

Charge transfer between STM tip and Au(100) has been investigated by using a Scanning Tunneling Microscopy (STM) technique in dry, $H_2O$, and $D_2O$ atmospheres. Dry atmosphere was indicated by humidity as low as 5 % and high humidity as high as 98% was managed by injecting $H_2O$ and $D_2O$ to the chamber. The current decayed more slowly in high humidity than in dry atmosphere. The plateau currents were found to appear at separations larger than ca. $5{\AA}$ where the current decay stopped depending on applied bias voltages. The polarity dependence was observed at the STM junction between Pt-Ir tip and the gold. On the contrary, little dependence was seen at the one between Au tip and the substrate electrode.