• Title/Summary/Keyword: bias dependence

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Magnetic Field Sensors using Co-base Amorphous Ribbon (Co계 아몰퍼스리본을 이용한 자계센서)

  • Shin, Kwang-Ho;Park, Kyung-Il;Song, Jae-Yeon;Kim, Young-Hak;SaGong, Geon
    • Journal of Sensor Science and Technology
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    • v.12 no.5
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    • pp.205-210
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    • 2003
  • To develop the highly sensitive Magneto-Impedance sensor, the amorphous ribbon was micro-processed to meander type sensor pattern, and its external magnetic field dependence of impedance was investigated. The impedance of the pattern had peak value at the magnetic field of 13 Oe and its changing ratio was about 170%. The impedance change per unit magnetic field was about 36% at bias field of 6 Oe, in which the output with high sensitivity and linearity could be obtained. The magnetic field resolution of the sensor module, which consist of the amorphous pattern and driving circuit, was about $10^{-3}$ Oe.

Studies on the Fruiting Phase of Rape Under the Different Cultural Conditions

  • Kae, B.M.
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.12
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    • pp.77-87
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    • 1972
  • The fruiting phase of rape under transplanting and direct-sowing conditions has been studied at Mokpo during the 2 years period from 1970 to 1971. Two varieties, Yudal and Miyuki were used in this study. The planting space and sowing time were also incorporated into this study. The results could be summarized as follows: 1. The plant tape of rape was nearly umbrella-shaped of all, but has changed to the laid elliptical-shaped, broadly ovate and spindle-shaped under different varieties and cultural conditions in the plant diagram(Fig. 2). 2. The length of the primary branches for each nodes had a tendency to the symmetric apical curve with the apex at the upper 10-12th node in the transplanting. but to the upper bias apical curve with the apex at the upper 5-7th node in the dense-sowing(Fig.3). 3. The ear of main stem was longer, more pods, heavier 1, 000 grains and more grain yield than ear of primary branches of all, Especially, as for that, the rate of yield constitution per plant in the direct-sowing was higher than in the transplanting(Fig. 4, 5, 6, 7, 8, 9). 4. The ear-length of the primary branches for each nodes had a tendency to the relatively slowly apical curve with the apex at the upper 3-4th node in the transplanting, but to the lower bias apical curve with the apex at the upper 2nd node in the dense-sowing. Especially, the possibility of growth at the lower ears was few in the early variety (Fig. 4). 5. The number of pod per ear on the primary branches for each nodes had a .tendency to the curve of ear-length with the apex at the upper 5-8thnode in the transplanting and at the upper 4-5th node in the dense-sowing (Fig. 5). Accordingly, a high positive correlation was found between the ear-length and number of pod per ear (Table 2) 6. In the transplanting, the high rate of effective ear was from the upper nods to the 12th node, but below the 16-17th nodes was ineffective. However, in the early dense-sowing the high rate of effective was to the 7th node. but below the 10th nodes was. ineffective. Especially, in the early variety has difficult to secure of poi-numbers for ineffective of the lower nodes(Fig. 6.). 7. The density of pod setting of the ear of main stem was the longest of all ears, and the lower nods were, the shorter it became. That had a tendency to the evidently apical growth. However. in the early variety, it was lengthened according to growth of ear-length(Fig.7). 8. The pod-length of the medium nodes was longer than the upper and lower, and the possitive correlation between pod-length and number of grain per poi was very high(Table 2.). 9. In the grain yield per node of primary branches, the most yielding node of transplanting was the upper 9th node, of dense-sowing 4-5th node(Fig 8.), and the possitive correlation between grain yield per node and ear-length or number of pod per ear was very high(Table 2). 10. The grain yield of ear of main stem was higher than that of primary branches in the percentage of dependence for grain yield per plant. The limint node of 50% of dependence to cumulative grain yield per plant was the upper 7-8th node in tranplanting, in the early dense-sowing 4-5th node, and in tke late dense-sowing-3th node(Fig. 9). 11. In the weight of 1, 000 grains the lower nodes were, the lighter it becames in dense-sowing. Therefore, this was also lighter than in the transplanting to the (Fig. 10.). 12. The oil content of grain at the medium nodes was low in the early variety, but at the ear of main stem and upper 1st node it was extremely high(Fig. 11.).

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Bias Voltage Dependence of Magnetic Tunnel Junctions Comprising Double Barriers and CoFe/NiFeSiB/CoFe Free Layer (CoFe/NiFeSiB/CoFe 자유층을 갖는 이중장벽 자기터널접합의 바이어스전압 의존특성)

  • Lee, S.Y.;Rhee, J.R.
    • Journal of the Korean Magnetics Society
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    • v.17 no.3
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    • pp.120-123
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    • 2007
  • The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe7/$AlO_x$/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an $Ni_{16}Fe_{62}Si_8B_{14}$ 7 nm, $Co_{90}Fe_{10}$ (fcc) 7 nm, or CoFe $t_1$/NiFeSiB $t_2$/CoFe $t_1$ layer in which the thicknesses $t_1$ and $t_2$ are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of $86\;k{\Omega}{\mu}m^2$, a coercivity ($H_c$) of 11 Oe, and an interlayer coupling field ($H_i$) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of $68\;k{\Omega}{\mu}m^2$, and a of 11 Oe, but an increased of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and became large because of the magnetostatic $N{\acute{e}}el$ coupling.

Magnetic Properties of Fe-6.0 wt%Si Alloy Dust Cores Prepared with Phosphate-coated Powders (인산염 피막처리 분말을 사용한 Fe-6.0 wt%Si 합금 압분자심의 자기적 특성)

  • Jang, D.H.;Noh, T.H.;Kim, K.Y.;Choi, G.B.
    • Journal of the Korean Magnetics Society
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    • v.15 no.5
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    • pp.270-275
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    • 2005
  • Dust cores (compressed powder cores) of $Fe-6.0wt\%Si$ alloy with a size of $35\~180\;{\mu}m$ in diameter have been prepared by phosphate coatings and annealings at $600\~900^{\circ}C$ for 1 h in nitrogen atmosphere. Further the magnetic and mechanical properties of the powder cores were investigated. As a general trends, the compressive strength and core loss decreased with the increase in annealing temperature. When annealed at $800^{\circ}C$, the compressive strength was 15 kgf, the permeability and quality factor were 74 and 26, respectively. Moreover the core loss at 50 kHz and 0.1 T induction was $750\;mW/cm^3$, and the percent permeability under the static field of 50 Oe was estimated to be about 78. In addition, the cut-off frequency in the cure representing the frequency dependence of effective permeability was measured to be around 200 kHz. These properties of the $Fe-6.0wt\%Si$ alloy dust cores could be considered to be due to the good insulation effect of iron-phosphate coats, the decrease in magnetocrystalline anisotropy and saturation magnetostriction and the increase in electric resistivity.

The Cross-validation of Satellite OMI and OMPS Total Ozone with Pandora Measurement (지상 Pandora와 위성 OMI와 OMPS 오존관측 자료의 상호검증 방법에 대한 분석 연구)

  • Baek, Kanghyun;Kim, Jae-Hwan;Kim, Jhoon
    • Korean Journal of Remote Sensing
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    • v.36 no.3
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    • pp.461-474
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    • 2020
  • Korea launched Geostationary Environmental Monitoring Satellite (GEMS), a UV/visible spectrometer that measure pollution gases on 18 February 2020. Because satellite retrieval is an ill-posed inverse solving process, the validation with ground-based measurements or other satellite measurements is essential to obtain reliable products. For this purpose, satellite-based OMI and OMPS total column ozone (TCO), and ground-based Pandora TCO in Busan and Seoul were selected for future GEMS validation. First of all, the goal of this study is to validate the ground ozone data using characteristics that satellite data provide coherent ozone measurements on a global basis, although satellite data have a larger error than the ground-based measurements. In the cross validation between Pandora and OMI TCO, we have found abnormal deviation in ozone time series from Pandora #29 observed in Seoul. This shows that it is possible to perform inverse validation of ground data using satellite data. Then OMPS TCO was compared with verified Pandora TCO. Both data shows a correlation coefficient of 0.97, an RMSE of less than 2 DU and the OMPS-Pandora relative mean difference of >4%. The result also shows the OMPS-Pandora relative mean difference with SZA, TCO, cross-track position and season have insignificant dependence on those variables.In addition, we showed that appropriate thresholds depending on the spatial resolution of each satellite sensor are required to eliminate the impact of the cloud on Pandora TCO.

Temperature Dependence on Dry Etching of $ZrO_2$ Thin Films in $Cl_2/BCl_3$/Ar Inductively Coupled Plasma ($Cl_2/BCl_3$/Ar 유도 결합 플라즈마에서 온도에 따른 $ZrO_2$ 박막의 식각)

  • Yang, Xue;Kim, Dong-Pyo;Lee, Cheol-In;Um, Doo-Seung;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.145-145
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    • 2008
  • High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

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Investigation of field emission mechanism of undoped polyucrystalline diamond films

  • Shim, Jae-Yeob;Chi, Eung-Joon;Song, Kie-Moon;Baik, Hong-Koo
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.62-62
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    • 1999
  • Carbon based materials have many attractive properties such as a wide band gap, a low electron affinity, and a high chemical and mechanical stability. Therefore, researches on the carbon-based materials as field emitters have been drawn extensively to enhance the field emission properties. Especially, diamond gives high current density, high current stability high thermal conductivity durable for high temperature operation, and low field emission behaviors, Among these properties understanding the origin of low field emission is a key factor for the application of diamond to a filed emitter and the verification of the emission site and its distribution of diamond is helpful to clarify the origin of low field emission from diamond There have been many investigations on the origin of low field emission behavior of diamond crystal or chemical vapor deposition (CVD) diamond films that is intentionally doped or not. However, the origin of the low field emission behavior and the consequent field emission mechanism is still not converged and those may be different between diamond crystal and CVD diamond films as well as the diamond that is doped or not. In addition, there have been no systematic studies on the dependence of nondiamond carbon on the spatial distribution of emission sites and its uniformity. Thus, clarifying a possible mechanism for the low field emission covering the diamond with various properties might be indeed a difficult work. On the other hand, it is believed that electron emission mechanisms of diamond are closely related to the emission sites and its distributions. In this context, it will be helpful to compare the spatial distribution of emission sites and field emission properties of the diamond films prepared by systematic variations of structural property. In this study, we have focused on an understanding of the field emission variations of structural property. In this study, we have focused on an understanding of the field emission mechanism for the CVD grown undoped polycrystalline diamond films with significantly different structural properties. The structural properties of the films were systematically modified by varying the CH4/H2 ratio and/or applying positive substrate bias examined. It was confirmed from the present study that the field emission characteristics are strongly dependent on the nondiamond carbon contents of the undoped polycrystalline diamond films, and a possible field emission mechanism for the undoped polycrystalline diamond films is suggested.

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Characteristics of InGaAs/GaAs/AlGaAs Double Barrier Quantum Well Infrared Photodetectors

  • Park, Min-Su;Kim, Ho-Seong;Yang, Hyeon-Deok;Song, Jin-Dong;Kim, Sang-Hyeok;Yun, Ye-Seul;Choe, Won-Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.324-325
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    • 2014
  • Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

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Magnetoresistance of Single-type and Dual-type GMR-SV Multilayer Thin Films with Top and Bottom IrMn Layer (상부와 하부 IrMn층을 갖는 단일구조 및 이중구조 거대자기저항-스핀밸브 다층박막의 자기적 특성 비교 분석)

  • Choi, Jong-Gu;Kim, Su-Hee;Choi, Sang-Heon;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
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    • v.27 no.4
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    • pp.115-122
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    • 2017
  • The antiferromagnet IrMn based four different GMR-SV multilayers on Corning glass were prepared by using ion beam deposition and DC magnetron sputtering system. The magnetoresistance (MR) properties for single-type and dual-type GMR-SV multilayer films were investigated through the measured major and minor MR curves. The exchange bias coupling field ($H_{ex}$) and coercivity ($H_c$) of pinned layer, the $H_c$ and interlayer exchange coupling field ($H_{int}$) of free layer for the dual-type structure GMR-SV multilayer films consisted of top IrMn layer were 410 Oe, 60 Oe, 1.6 Oe, and 7.0 Oe, respectively. The minor MR curve of two free layers was performed the squarelike feature having a MR ratio of 8.7 % as the sum of 3.7 % and 5.0 %. The value of average magnetic field sensitivity (MS) was maintained at 2.0 %/Oe. Also, the magnetoresistance properties of the single-type and dual-type structure GMR-SV multilayer films consisted of bottom IrMn layer were decreased more than those of top IrMn layer. Two antiparallel states of magnetization spin arrays of the pinned and free layers in the dual-type GMR-SV multilayer films occurred the maximum MR value by the effect of spin dependence scattering.

Ordered Macropores Prepared in p-Type Silicon (P-형 실리콘에 형성된 정렬된 매크로 공극)

  • Kim, Jae-Hyun;Kim, Gang-Phil;Ryu, Hong-Keun;Suh, Hong-Suk;Lee, Jung-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.241-241
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    • 2008
  • Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.

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