• 제목/요약/키워드: bias dependence

검색결과 194건 처리시간 0.03초

Metal-Insulator-Metal 터널접합의 산탄잡음을 이용한 일차 온도계 구현 (Realization of Primary Thermometer from Electrical Shot Noise in a Metal-Insulator-Metal Tunnel Junction)

  • 박정환;;최정숙;김정구;류상완;송운;정연욱
    • Progress in Superconductivity
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    • 제11권2호
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    • pp.96-99
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    • 2010
  • We measured electrical shot noise in a metal-insulator-metal tunnel junction, which was made by using electron-beam lithography and double-angle evaporation technique. Since the dependence of the shot noise on bias voltage and temperature is theoretically well known, we can determine the temperature of the junction by measuring the noise as the voltage across the junction is changed. A cryogenic low noise amplifier was used to amplify the noise signal in the frequency range of 600-800 MHz, which enabled fast measurement of noise signal and thus temperature. With further study, this method could be useful for primary thermometry in cryogenic temperatures.

The properties of diamond-like carbon(DLC) films prepared using ECR-PECVD and its dependence on deposition parameers

  • 손영호;박노길;박형국;정재인;김기홍;배인호;김인수;황도원
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.47-47
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    • 1999
  • 2.45 GHz 마이크로웨이브를 이용하는 electron cyclotron resonance plasma enhanced chemical vapor deposition(ECR-PECVD)방법으로 다이아몬드성 탄소박막(diamond-like carbon, DLC)을 증착하였다. DLC 박막의 산업 응용을 위해서는 높은 경도와 밀착력이 필요하다. 그래서 본 실험에서는 DLC 박막의 산업 응용을 위하여 ECR-PECVD 방법으로 증착된 DLC 박막의 분석결과로부터 DLC 박막의 물성과 증착조건의 관계를 조사하였다. 기판으로는 실리콘 웨이퍼와 실험용 SUS 판을 사용하였다. 아르곤 가스를 주입하여 ECR 마이크로 웨이브 플라즈마와 negative DC bias로 기판을 플라즈마 세척한 후, 수소와 메탄가스를 반응기체로 하여 DLC 박막을 증착하였다. 박막 증착시에 13.56MHz RF 전원 공급장치로 기판에 전원을 공급하였다. DLC 박막 증착의 변수는 반응기체의 호합율, 마이크로웨이브 파워, 프로세스 압력 및 RF 전원공급장치에서 유도되는 negative self DC bias 등이다. 이때 사용된 반응기체의 혼합율(메탄/수소)은 10~50%이고, 수소 가스 흐름율은 100sccm, 메탄은 10~50sccm이다. 마이크로웨이브의 크기는 360~900W, negative self DC bias는 -500~-10 V였다. 그리고 본 실험에서는 높은 증착율을 고려하여 프로세스 압력을 10~30mTorr까지 조절하였다. ER-PECVD 방법으로 증착된 DLC 박막은 SEM으로 단면, $\alpha$-Step으로 두께, Raman 분광계로 탄소 결합구조, FTIR 분광계로 탄소와 수소 결합구조, Micro-Hardness로 경도 그리고 Scratch Tester로 밀착력 등을 분석하였다.

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Post-reionization Kinetic Sunyaev-Zel'dovich Effect in Illustris Simulation

  • Park, Hyunbae;Sabiu, Cristiano;Li, Xiao-dong;Park, Changbom;Kim, Juhan
    • 천문학회보
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    • 제42권1호
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    • pp.52.2-53
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    • 2017
  • We develop a methodology to use the redshift dependence of the galaxy 2-point correlation function (2pCF) as a probe of cosmological parameters. The positions of galaxies in comoving Cartesian space varies under different cosmological parameter choices, inducing a redshift-dependent scaling in the galaxy distribution. This geometrical distortion can be observed as a redshift-dependent rescaling in the measured 2pCF. The shape of the 2pCF exhibits a significant redshift evolution when the galaxy sample is analyzed under a cosmology differing from the true, simulated one. Other contributions, including the gravitational growth of structure, galaxy bias, and the redshift space distortions, do not produce large redshift evolution in the shape. We show that one can make use of this geometrical distortion to constrain the values of cosmological parameters governing the expansion history of the universe. This method could be applicable to future large scale structure surveys, especially photometric surveys such as DES, LSST, to derive tight cosmological constraints. This work is a continuation of our previous works as a strategy to constrain cosmological parameters using redshift-invariant physical quantities.

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Electrical Characteristics of InAlAs/InGaAs/InAlAs Pseudomorphic High Electron Mobility Transistors under Sub-Bandgap Photonic Excitation

  • Kim, H.T.;Kim, D.M.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제3권3호
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    • pp.145-152
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    • 2003
  • Electrical gate and drain characteristics of double heterostructure InAlAs/InGaAs pseudomorphic HEMTs have been investigated under sub-bandgap photonic excitation ($hv). Drain $(V_{DS})-,{\;}gate($V_{DS})-$, and optical power($P_{opt}$)-dependent variation of the abnormal gate leakage current and associated physical mechanisms in the PHEMTs have been characterized. Peak gate voltage ($V_{GS,P}$) and the onset voltage for the impact ionization ($V_{GS.II}$) have been extracted and empirical model for their dependence on the $V_{DS}$ and $P_{opt} have been proposed. Anomalous gate and drain current, both under dark and under sub-bandgap photonic excitation, have been modeled as a parallel connection of high performance PHEMT with a poor satellite FET as a parasitic channel. Sub-bandgap photonic characterization, as a function of the optical power with $h\nu=0.799eV$, has been comparatively combined with those under dark condition for characterizing the bell-shaped negative humps in the gate current and subthreshold drain leakage under a large drain bias.

광전극으로서 TiO2 부동태 피막의 반도체 성질에 대한 연구 (Semiconductive Properties of Passivating TiO2 Film as Photoanode)

  • 김창하;변수일
    • 한국수소및신에너지학회논문집
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    • 제1권1호
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    • pp.48-54
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    • 1989
  • Semiconductive property of the passivating $TiO_2$ film was investigated by measuring the impedance of passivated titanium electrode in a 0.1 N NaOH solution. The passive film was prepared galvanostatically with $10mA/cm^2$ at formation potential of 50 V in a 1 N $H_2SO_4$ solution. The impedance measurement was conducted by superimposing an ac voltage of 5 m V amplitude with the frequency ranging from 5 to 10000 Hz on a dc bias (applied potential). The donor distribution in the film was depicted from the analysis of the non-linear slope of Mott-Schottky plot. The region with nearly constant concentration of donors near the electrolyte/film interface amounts at about 60 percent of the total film thickness and donor concentration increases largely with distance from the surface in an inner region near the film/metal interface. In a region of the film/metal interface the donor concentration showed a frequency dependence greater than in a region of the electrolyte/film interface. The result of donor concentration against frequency suggests a transition from crystalline to amorphous state with distance from the electrolyte/film interface in the passivating $TiO_2$ films. This is also confirmed by the ac conductivity measurement.

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초경량성 박용기관을 위한 마그네슘 표면처리 (A Study on the Surface Treatment of Magnesium for marine engine systems)

  • 윤용섭
    • Journal of Advanced Marine Engineering and Technology
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    • 제35권2호
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    • pp.252-257
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    • 2011
  • 본 연구에서는 초경량성 마그네슘 재료를 엔진 블록, 실린더 헤드커버 등과 같은 박용기관에 적용하기 위한 환경 친화적 표면처리의 개발에 대하여 고찰하였다. 또한 이온플레이팅법에 의해 마그네슘 박막을 제작하고, 그 제작조건에 따라 변화하는 막의 결정배향성과 몰포로지가 경도특성에 미치는 영향을 해명하고자 하였다. 마그네슘 박막의 경도측정 결과, 아르곤 가스압의 증가에 따라 그 경도값이 상승하였 는데, 그 원인은 결정립계에 의한 강화와 성분 외 가스입자의 흡장효과에 의한 것으로 사료된다.

Modeling the tidal connection between in and around galaxy clusters

  • 송현미;이정훈
    • 천문학회보
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    • 제36권2호
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    • pp.53.1-53.1
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    • 2011
  • We analyze the halo and galaxy catalogs from the Millennium simulations at redshifts z=0, 0.5, 1 to determine the alignment profiles of cluster galaxies in terms of the matter density correlation coefficient and discuss a cosmological implication our result has for breaking parameter degeneracies. For each selected cluster, we measure the alignment between the major axes of the pseudo inertia tensors from all satellites within cluster's virial radius and from only those satellites within some smaller radius. Then we average the measured values over the similar-mass sample to determine the cluster galaxy alignment profile as a function of top-hat scale difference at each redshift. It is shown that the alignment profile of cluster galaxies is well approximated by a power-law of the nonlinear density correlation coefficient that is independent of the power spectrum normalization and bias factor. The alignment profile of cluster galaxies is found to have higher amplitude and lower power-law index when averaged over the larger-mass sample and to have rather weak redshift-dependence. This result is consistent with the picture that the satellite galaxies retain the memory of the external tidal fields right after merging and infalling into the clusters but they gradually lose the initial alignment tendency as the cluster's relaxation proceeds. Demonstrating that the nonlinear density correlation coefficient varies sensitively with the density parameter and neutrino mass fraction, we discuss a potential power of the cluster galaxy alignment profile as an independent probe of cosmology.

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휘스톤브리지형 MR 센서제작 및 특성 (Wheastone-bridge type MR sensors of Si(001)/NiO($300{\AA}$)/NiFe bilayer system)

  • 이원재;민복기;송재성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.260-263
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    • 2002
  • There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in $45^{\circ}$ Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ was shown in the range of about ${\leq}{\pm}5$ Oe.

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In0.27Ga0.73N/GaN 다중 양자우물 구조에 대한 광전기적 특성 (Optoelectronics Properties of In0.27Ga0.73N/GaN Multi-Quantum-Well Structure)

  • 박헌보;배인호;김기홍
    • 한국재료학회지
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    • 제17권9호
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    • pp.489-492
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    • 2007
  • Temperature and injection current dependence of elctroluminescence(EL) spectral intensity of the $In_{0.27}Ga_{0.73}N/GaN$ multi-quantum-well(MQW) have been studied over a wide temperature and as a function of injection current level. EL peaks also show significant broadening into higher photon energy region with the increase of injection current. This is explained by the band-filling effect. When temperature is slightly increased to 300 from 15 K, the EL emission peak showed red-blue-red shift. It can be explained by the carrier localization by potential fluctuation of multiple quantum well and band-gap shrinkage as temperature increase. It is found that a temperature-dependent variation pattern of the EL efficiency under very low and high injection currents show a drastic difference. This unique EL efficiency variation pattern with temperature and current is explained field effects due to the driving forward bias in presence of internal(piezo and spontaneous polarization) fields.

몰리브덴 팁 전계 방출 소자의 제조 및 다이아몬드 상 카본의 코팅효과 (Fabrication of Mo-tip Field Emitter Array and Diamond-like Carbon Coating Effects)

  • 주병권;정재훈;김훈;이상조;이윤희;차균현;오명환
    • 한국전기전자재료학회논문지
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    • 제11권7호
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    • pp.508-516
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    • 1998
  • Mo-tip field emitter arrays(FEAs) were fabricated by conventional Spindt process and their life time characteristics and failure mode were evaluated. The fabricated Mo-tip FEA could generate at least $0.35\{mu} A/tip$ emission current for about 320 persistently under a constant gate bias of 140 V and was finally destroyed through self-healing mode. Thin diamond-like carbon films were coated on the M-tip by plasma-enhanced CVD and the dependence of emission properties upon the DLC thickness was investigated. By DLC coating, the turn-on voltage and emission current were appeared to be improved whereas the current fluctuation was increased in the DLC thickness range of $0~1,000\{AA}$.

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