• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.32-35
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• 2003

Nonlinear parameterization of OLED device from measurements of bias dependence of impedance spectra and parameter extraction using Levenberg-Marquardt complex nonlinear least square regression algorithm based on resistor-capacitor equivalent circuit model enables computer simulation of OLED power driving characteristics in forms of square-wave or sinusoidal output signal at arbitrary conditions. We introduce developed OLED power driving simulation software and discuss transient responses in voltage-or current-controlled operations as well as nonlinear characteristics of OLED, by presenting both the simulation and experimental results. This OLED simulation technique using impedance spectroscopy is extremely useful in predicting performance of the nonlinear device, especially in time-domain analysis of device operation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.337-340
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• 2004

To develop the highly sensitive Magneto-Impedance sensor, the amorphous ribbon was micro-processed to meander type sensor pattern and the filter circuit was constructed with this pattern. Its external magnetic field dependence of impedance and the output properties of the filter circuit were investigated. The impedance of the pattern had a peak value at the magnetic field of 10 Oe and its changing ratio was about 280%. The impedance change per unit magnetic field was about 36%, in which the output with high sensitivity and linearity could be obtained. The output sensitivity was about 7%/Oe at bias field of 6 Oe..

• 전자공학회논문지A
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• 제32A권1호
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• pp.119-128
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• 1995

We report hybrid and passive mode-locking results of tilted-stripe AlGaAs semiconductor laser traveling wave amplifiers with saturable absorbers. Dependence ofthe pulse width on the mode locking frequency, the bandwidth of spectral filters, and the bias current of the laser amplifier are investigated. We generate 4 ps optical pulses by using the hybrid mode locking technique. The repetition rate and the peak power of generated pulses are 516 MHz and 170 mW, respectively. The tuning range of uor mode locked laser is 10 nm with the center wavelength of 780 nm. We also generate 2.6 ps optical pulses with peak power of 830 mW by using the passive mode locking technique.

• ETRI Journal
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• 제28권1호
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• pp.45-50
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• 2006

An RC oscillator using amorphous silicon thin film transistors was developed. The oscillation frequency and its dependence on resistance and bias voltage were studied. The frequency was controlled by adjusting the feedback resistance of the oscillator. The highest measured frequency of the oscillator was around 140 kHz, which is acceptable for low-end radio frequency identification (RFID). Since a low-end RFID circuit needs low cost and a simple process, an amorphous silicon oscillator is suitable.

• 천문학회보
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• 제37권1호
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• pp.35.1-35.1
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• 2012

Determining the virial factor of the broad-line region (BLR) gas is crucial in calibrating AGN black hole mass estimators, since the measured line-of-sight velocity needs to be converted into the representative velocity of the BLR gas. The unknown virial factor has been empirically calibrated based on the $M_{BH}-{\sigma}_*$ relation of non-AGN galaxies, but the claimed values are different by a factor of 2 in recent studies. We investigate the origin of the difference by measuring the $M_{BH}-{\sigma}_*$ relation using the most updated nearby galaxy sample, and explore the dependence of the virial factor on the various fitting methods. We find that the discrepancy is mostly caused by the sample bias while the difference stemming from various regression methods is marginal. Based on the best-determined virial factor, we present the updated $M_{BH}-{\sigma}_*$ relation of local active galaxies.

• Progress in Superconductivity
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• 제11권2호
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• pp.158-161
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• 2010

We measured the critical current of a Cooper pair transistor consisting of two Josephson junctions and a gate electrode. The Cooper pair transistors were fabricated by using electron-beam lithography and double-angle evaporation technique. The Gate voltage dependence of critical current was measured by observing voltage jumps at various gate voltages while sweeping bias current. The observed oscillation was 2e-periodic, which shows the Cooper pair transistor had low level of quasiparticle poisoning.

• Journal of Advanced Marine Engineering and Technology
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• 제30권8호
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• pp.927-933
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• 2006

The structural and electrical characteristics of PLZT thin films fabricated onto $Pt/IrO_2/Ir/Ti/SiO_2/Si$ substrates by a pulsed laser deposition were investigated to develop the high dielectric thin films for capacitor layer of semiconductor memory devices The slim region 14/50/50 PLZT thin films were fabricated by PLD and estimated the characteristics for memory application 14/50/50 PLZT thin films have crystallize into perovskite structure at the $600^{\circ}C$ deposition temperature, 200 mTorr of oxygen pressure, and 2 $J/cm^2$ of laser energy density. In this condition PLZT thin films had the dielectric constant as high as 985, storage charge density 8.17 ${\mu}C/cm^2$ and charging time 0.20 ns. Leakage current density was less than $10^{-10}A/cm^2$ up to 5 V bias voltage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.319.1-319.1
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• 2014

We present the results on the indium tin oxide (ITO) Schottky barrier solar cells (SBSCs) with InAs quantum dots (QDs). The dependence of external quantum efficiency on the external bias voltage has been studied to anlayze carrier extraction through tunneling at room temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.137-140
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• 2002

The frequency response analysis of complex impedance spectra using small perturbation ac impedance spectroscopy is an informative method of OLED performance characterization and lifetime analysis. Using simple RC equivalent circuit mode,l macroscopic nonliniear transport properties of semiconductive emission/transport layers can be analyzed and parameterized. We present the bias voltage dependence and aging effect in impedance spectra measured from an ITO/CuPC/TPD/$Alq_3$/LiF/Al OLED device, and discuss possible failure mechanism based on impedance model parameters.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.90-93
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• 1996

The conduction mechanisms of the off-current in low temperature ($\leq$600$^{\circ}C$) processed polycrystalline silicon thin film transistors (LTP poly-Si TFT's) has been systematically studied. Especially, the temperature and bias dependence of the off-current between unpassivated and passivated poly-Si TFT's was investigated and compared. The off-current of unpassivated poly-Si TFT's is due to a resistive current at low gate and drain voltage, thermal emission current at high gate, low drain voltage, and field enhanced thermal emission current in the depletion region near the drain at high gate and drain voltage. After hydrogenation, it was observed that the off-currents were remarkably reduced by plasma-hydrogenation. It was also observed that the off-currents of the passivated poly-Si TFT's are more critically dependent on temperature rather than electric field.