• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.33-39
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• 2006

An empirical nonlinear model with intrinsic nonlinear elements has been newly developed to predict the RF nonlinear characteristics of nano-scale bulk MOSFET accurately over the wide bias range. Using an extraction method suitable for nano-scale MOSFET, the bias-dependent data of intrinsic model parameters have been accurately obtained from measured S-parameters. The intrinsic nonlinear capacitance and drain current equations have been empirically obtained through 3-dimensional curve-fitting to their bias-dependent curves. The modeled S-parameters of 60nm MOSFET have good agreements with measured ones up to 20GHz in the wide bias range, verifying the accuracy of the nano-scale MOSFET model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.104-110
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• 2008

In this paper we proposed a new source-drain structure for N-type MOSFET which can suppress the output resistance reduction of a device in saturation region due to soft break down leakage at high drain voltage when the gate is biased around relatively low voltage. When a device is generally used as a switch at high gate bias the current level is very important for the operation. but in electronic circuit like an amplifier we should mainly consider the output resistance for the stable voltage gain and the operation at low gate bias. Hence with T-SUPREM simulator we designed devices that operate at low gate bias and high gate bias respectively without a extra photo mask layer and ion-implantation steps. As a result the soft break down leakage due to impact ionization is reduced remarkably and the output resistance increases about 3 times in the device that operates at the low gate bias. Also it is expected that electronic circuit designers can easily design a circuit using the offered N-type MOSFET device with the better output resistance.

• The Journal of Information Systems
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• v.24 no.2
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• pp.189-208
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• 2015

Purpose While individuals have unique abilities for planned behavior, they also often act irrationally. In this study, we draw on myopic loss aversion perspective as a meta-theoretical lens to explain why mobile applications users have inertia from updating their applications, ultimately leading them to use current version of applications. Design/methodology/approach Based on a survey of 219 users, this study conducts its research model using partial least square analysis and also demonstrates that both subconscious triggers (habit and anxiety) of system 1 thinking and conscious triggers (sunk cost and transition cost) of system 2 thinking promotes user's inertia, thus leading to the willness to continue use current versions. Findings By grounding the research model in the combination of both status quo bias and dual information processing theory from the behavioral economics, this study provide an alternative theoretical lens to describe why mobile users hesitate to update their applications. The results of this research show that all triggers have significant impacts on inertia. This study also found that the relationship between inertia and willingness to continue to use current version was positively significant.

• Journal of Hydrogen and New Energy
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• v.12 no.4
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• pp.257-265
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• 2001

Placing a hydrogen conducting, methanol impermeable metallic barrier like palladium (Pd) is a well-known method for preventing methanol crossover through solid polymer electrolyte for direct methanol fuel cells (DMFC). Applying a bias potential between the anode and the barrier can further develop this concept so that the hydrogen transfer rate is enhanced. Since hydrogen diffuses in Pd as atomic form while it moves through nafion electrolyte as ion, it has to be reduced or oxidized whenever it passes the interface formed by Pd and the electrolyte. We performed experiments to measure the hydrogen transport through the Pd membrane placed in Nafion electrolyte of hydrogen/oxygen fuel cell (PEMFC). Applying a bias potential between the hydrogen electrode of the cell and the Pd membrane facilitated the hydrogen passage through the Pd membrane. The results show that the cell current measured with the Pd membrane placed reached almost 40 % the value measured with the cell without Pd membrane. It was found that the current flown through the bias path is only a few percent of the cell current.

• Korean Journal of Materials Research
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• v.33 no.6
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.11
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• pp.83-94
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• 2003

In this paper. a highly linear and low glitch CMOS current mode digital-to-analog converter (DAC) by self calibration bias circuit is proposed. The architecture of the DAC is based on a current steering 6＋4 segmented type and new switching scheme for the current cell matrix, which reduced non-linearity error and graded error. In order to achieve a high performance DAC . novel current cell with a low spurious deglitching circuit and a new inverse thermometer decoder are proposed. The prototype DAC was implemented in a 0.35${\mu}{\textrm}{m}$ n-well CMOS technology. Experimental result show that SFDR is 60 ㏈ when sampling frequency is 32MHz and DAC output frequency is 7.92MHz. The DAC dissipates 46 mW at a 3.3 Volt single power supply and occupies a chip area of 1350${\mu}{\textrm}{m}$ ${\times}$750${\mu}{\textrm}{m}$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.4
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• pp.11-17
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• 2015

While most switching devices are based on PN junctions, a single layer can realize a switching device in the case of vanadium dioxide($VO_2$) thin films. In this paper, bidirectional current triggering(switching) is demonstrated in a two-terminal planar device based on a $VO_2$ thin film by illuminating the film with an infrared laser at 1550nm. To begin with, a two-terminal planar device, which had a $30{\mu}m$-wide $VO_2$ conducting layer and an electrode separation of $10{\mu}m$, was fabricated. A specific bias voltage range for stable bidirectional laser triggering was experimentally obtained by measuring the current-voltage characteristics of the fabricated device in a current-controlled mode. Then, by constructing a test circuit composed of the device, a standard resistor, and a DC voltage source, connected in series, the transient response of laser-triggered current and its response time were investigated with a DC bias voltage, included in the above specific bias voltage range, applied to the device. In the test circuit with a DC voltage source of 3.35V and a $10{\Omega}$ resistor, bidirectional laser triggering could be realized with a maximum on-state current of 15mA and a switching contrast of ~78.95.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.11
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• pp.36-43
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• 2015

A pixel-level readout circuit is studied for 2-dimensional microbolometer focal plane arrays (FPAs). A current mirroring injection (CMI) input circuit with 2-step current-mode bias suppression is proposed for a pixel-level architecture with high responsivity and long integration time. The proposed circuit has been designed using a $0.35-{\mu}m$ 2-poly 4-metal CMOS process for a $320{\times}240$ microbolometer array with a pixel size of $50{\mu}m{\times}50{\mu}m$. The proposed 2-step bias-current suppression has sufficiently low calibration error with wide calibration range, and the calibration range and error can be easily optimized by controlling some design parameters. Due to high responsivity and a long integration time of more than 1 ms, the noise equivalent temperature difference (NETD) of the proposed circuit can be improved to 26 mK, which is much better than that of the conventional circuits, 67 mK.

• ETRI Journal
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• v.37 no.5
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• pp.961-971
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• 2015

This paper proposes a 250 mV supply voltage digital low-dropout (LDO) regulator. The proposed LDO regulator reduces the supply voltage to 250 mV by implementing with all digital circuits in a$0.11{\mu}m$ CMOS process. The fast current tracking scheme achieves the fast settling time of the output voltage by eliminating the ringing problem. The over-voltage and under-voltage detection circuits decrease the overshoot and undershoot voltages by changing the switch array current rapidly. The switch bias circuit reduces the size of the current switch array to 1/3, which applies a forward body bias voltage at low supply voltage. The fabricated LDO regulator worked at 0.25 V to 1.2 V supply voltage. It achieved 250 mV supply voltage and 220 mV output voltage with 99.5% current efficiency and 8 mV ripple voltage at $20{\mu}A$ to $200{\mu}A$ load current.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.289-292
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• 2001

A Novel fully-differential bipolar current-controlled current amplifier(CCCA) for electrically tunable circuit design at current-mode signal processing were designed. The CCCA was consisted of fully-differential subtracter and fully-differential current gain amplifier. The simulation result shows that the CCCA has current input impedance of 0.5 Ω and a good linearity. The CCCA has 3-dB cutoff frequency of 20 MHz for the range over bias current 100$mutextrm{A}$ to 20 ㎃. The power dissipation is 3 mW.