• Proceedings of the Korean Magnestics Society Conference
• /
• 2008.12a
• /
• pp.306.1-306.1
• /
• 2008

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.1019-1022
• /
• 2004

High performance p-ch poly-Si TFTs with excellent stability were developed. By using a frequency doubled DPSS CW laser, the a-Si on glass could be crystallized into one dimensional single crystalline silicon named as a sequential lateral crystallization (SLC) region. We fabricated p-ch TFTs on SLC region and the typical characteristic values of the TFTs were $u_{fe}$ = 180 $cm^2$/Vs, $V_{th}$ = -3 V, S.S. = 0.5 V/dec, and $I_{off}$ = 1 pA/um@ $V_d$ = -10V. It is found that the TFTs are very stable after bias stresses such as negative and positive gate biases, hot carrier bias and high current bias. These results indicate that the poly-Si in SLC region is suitable for system on glass (SOG) application.

• Journal of Dairy Science and Biotechnology
• /
• v.16 no.2
• /
• pp.154-160
• /
• 1998

The purpose of consumer sensory tests is to assess the personal response by current or potential customers of a product or specific product characteristics. There are several sources of bias in obtaining consumer response than often lead to misleading results. These biases include the situational variables of the testing environment, the products and the subjects. This paper discusses the sources of bias in consumer testing, need to be controlled when conducting consumer test.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.58 no.8
• /
• pp.1519-1525
• /
• 2009

This paper presents a novel passive converter for single phase SRM. The proposed passive converter has additional passive power circuit which is consisted by three diodes and one capacitor in the front-end of conventional asymmetric converter to supply a high negative bias during demagnetization. The high negative bias can reduce the demagnetization time and negative torque from tail current in single phase SRM. So, It can extend positive torque region by the extended turn-off position. In this paper, the structure and operating modes of a novel passive converter are introduced with mathematical model. The proposed single phase SRM using passive converter is verified by the computer simulation and experimental results.

• Journal of Sensor Science and Technology
• /
• v.18 no.4
• /
• pp.280-285
• /
• 2009

In this paper, we designed a 2-stage CMOS operational amplifier with temperature compensation function using 2-poly 4-metal 0.35 $\mu$m standard CMOS technology. Using two bias circuits, the positive temperature coefficient(PTC) and the negative temperature coefficient(NTC) of the bias circuit are canceled out each other. When reference current circuit is simulated that it has a temperature coefficient of -150 ppm/$^{\circ}C$ with a temperature change from 0 $^{\circ}C$ to 120 $^{\circ}C$. Also the proposed circuit has a temperature coefficient of -0.011 dB/$^{\circ}C$ of DC open loop gain with the same temperature range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.4
• /
• pp.263-268
• /
• 2001

This paper describes the effects of applied bias conditions on electrochemical etch-stop characteristics. THere are a number of key issues such as diode leakage and ohmic losses which arise when applying the conventional 3-electrochemical etch-stop to fabricated some of he MEMS(microelectro mechanical system) and SOI(Si-on-insulator) structures which employ SDB(Si-wafer direct bonding). This work allows to perform anin situ diagnostic to predict whether or not an electrochemical etch-stop would fail due to diode-leakage-induced premature passivation. In addition, it presents technology which takes into account the effects of ohmic losses and allows to calculate the appropriate bias necessary to obtain a successful electrochemical etch-stop.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.357-358
• /
• 2013

The non-linear characteristics of ON states are important for the application to the high density cross-point memory industry because the sneak current in neighbor cells occurred during reading, erasing, and writing process. Kw of above 20 in ON states, which is the writing current @ Vwrite/the current @ 1/2Vwrite, was required in cross-point ReRAM memory industry. The high current density non-linear IV curve of ZnSe selector was shown and the ALD HfO2 switching device has the linear properties of ON states and the compliance current of 100 uA. To evaluate the performance of the selection device, we connected itto HfO2 switching device in series. The bottom electrode of the selection device was connected to the top electrode of the RRAM. All of the bias was applied with respect to the top electrode of the selection device, whereas the bottom electrode of the RRAM was grounded. In the cross-point application, 1/2Vwrite and -1/2Vwrite were applied to the word-line and bit-line, respectively, which were connected to the selected cell, and a zero bias was applied to the unselected word-lines and bit-lines. The current @ 1/2Vwrite of the unselected cells was blocked by the selection device, thus eliminating the sneak path and obtaining a writing voltage margin. Using this method, the writing voltage margin was analyzed on the basis of the memory size.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.12
• /
• pp.2173-2178
• /
• 2007

Dynamics of plasma sheath was analyzed using simple ion fluid model with poison equation. Incident ion current, energy, potential distribution and space charge density profile were calculated as a function of time. The effects of initial floating sheath on the evolution of biased sheath were compared with ideal matrix sheath. The effects of finite rising time of pulse bias voltage on the ion current and energy was studied. The influence of surface charging on the evolution of sheath was also investigated

• Proceedings of the IEEK Conference
• /
• 2007.07a
• /
• pp.475-476
• /
• 2007

The stress induced leakage currents will affect data retention in synapse transistors and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor made by thin silicon oxides has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhibitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhibitory state.

• Journal of Surface Science and Engineering
• /
• v.36 no.1
• /
• pp.27-33
• /
• 2003

Pulsed magnetron sputtering of graphite target was employed for deposition of diamond-like carbon (DLC) films. Time-resolved probe measurements of magnetron discharge plasma have been performed. It was shown that the pulsed magnetron discharge plasma density ($∼10^{17}$ $m^{-3}$ ) is close to that of vacuum arc cathode sputtering of graphite. Raman spectroscopy was sed to examine DLC films produced at low ( $U_{sub}$ / < 1 kV) pulsed bias voltages applied to the substrate. It has been shown that maximum content of diamond-like carbon in the coating (50-60%) is achieved at energy per deposited carbon atom of $E_{c}$ =100 eV. In spite of rather high percentage of $sp^3$-bonded carbon atoms and good scratch-resistance, the films showed poor adhesion because of absence of ion mixing between the film and the substrates. Electric breakdowns occurring during the deposition of the insulating DLC film also thought to decrease its adhesion.