• Journal of the Korean Vacuum Society
• /
• v.8 no.3B
• /
• pp.346-352
• /
• 1999

Diamond-like carbon (DLC) lims were deposited by using end hall type ion gun. Benzene gas was used for the generation of carbon ions. In order to systematically control the ion energy, we applied to the substrate DC, pulsed DC or 250 kHz medium frequency bias voltage, DLC films of superior mechanical properties of hardness 39$\pm$4 GPa and elastic mudulus 290$\pm$50GPa (2 to 6 times better than those of the films deposited by plasma assisted CVD method) could be obtained. Deposition rate was much higher than when using Kaufman type ion source, which results from higher ion beam current of end hall type ion gun. The mechanical properties and atomic bond structure were independent of the bias voltage type ion gun. The mechanical properties and atomic bond structure were independent of the bias voltage type but intimately related with the magnitude of the bias voltage. With increasing the negative bias voltage, the structure of the films changed to graphitic one resulting in decreased content of three dimensional inter-links. Degradation of the mechanical properties with increasing bias voltage could be thus understood in terms of the content odf three dimensional inter-links.

• Journal of environmental and Sanitary engineering
• /
• v.10 no.2
• /
• pp.79-88
• /
• 1995

The electrostatic precipitation of Auto- Bias has the advantages of a little of power consumption by the voltage to apply only at ionizer and the prevention of fire danger by current flow over. As this ionizer wire was used WXN- Pt material of diameter 90$\mu $m, that improved ion efficiency and safety, simplified a existing source of electric power by induced Auto- Bias voltage. Also, the new type collector used electric conductivity- film wag superior a electric safety and dust collection efficiency and was possible to wash it by water. As a experiment result of this Auto- Bias electrostatic collector, the induced Auto- Bias voltage by appling D.C 4.0∼6.0kV at ionizer was 1.3∼2.3kV and then the power consumption by applied voltage was 8- l8W. The pressure loss of collector by the amount of flowing was 6.1 OmmH$_{2}$O in 300m$^{3}$/hr and showed a safe state of the dust collection. The collection efficiency by particle size was 65.1-95.8% in 0.5∼5.0$\mu $m. After corona discharge of ionizer, the remains ozone concentration was found much lower than that of ACGIH or air pollution criteria in Korea.

• International journal of advanced smart convergence
• /
• v.8 no.3
• /
• pp.46-53
• /
• 2019

When a partitioned structure is derived from a data set using a clustering algorithm, it is not unusual to have a different set of outcomes when it runs with a different order of data. This problem is known as the order bias problem. Many algorithms in machine learning fields try to achieve optimized result from available training and test data. Optimization is determined by an evaluation function which has also a tendency toward a certain goal. It is inevitable to have a tendency in the evaluation function both for efficiency and for consistency in the result. But its preference for a specific goal in the evaluation function may sometimes lead to unfavorable consequences in the final result of the clustering. To overcome this bias problems, the first clustering process proceeds to construct an initial partition. The initial partition is expected to imply the possible range in the number of final clusters. We apply the data centric sorting to the data objects in the clusters of the partition to rearrange them in a new order. The same clustering procedure is reapplied to the newly arranged data set to build a new partition. We have developed an algorithm that reduces bias effect resulting from how data is fed into the algorithm. Experiment results have been presented to show that the algorithm helps minimize the order bias effects. We have also shown that the current evaluation measure used for the clustering algorithm is biased toward favoring a smaller number of clusters and a larger size of clusters as a result.

• Journal of the Korean Academy of Child and Adolescent Psychiatry
• /
• v.35 no.2
• /
• pp.101-106
• /
• 2024

Objectives: Difficulties in interpersonal relationships intensify negative emotions and act as risk and maintenance factors for eating pathology in eating disorders. Rejection sensitivity refers to the tendency to react sensitively to a rejection. Patients with eating disorders experience difficulties in interpersonal relationships because of their high sensitivity to rejection. Cognitive bias modification interpretation (CBM-I) is a treatment developed to correct interpretation bias for social and emotional stimuli. In this review, we searched for research characteristics and trends through a systematic literature analysis of CBM-I for eating disorders. Methods: Five papers that met the selection and exclusion criteria were included in the final literature review and analyzed according to detailed topics (participant characteristics, design, and results). Results: The literature supports the efficacy of the CBM-I in reducing negative interpretation bias and eating disorder psychopathology in patients with eating disorders. CBM-I targets emotional dysregulation in adolescent patients with eating disorders and serves as an additional strengthening psychotherapy to alleviate eating disorder symptoms. Conclusion: The current findings highlight the potential of CBM-I as an individualized adjunctive treatment for adolescents with eating disorders and social functioning problems.

• ETRI Journal
• /
• v.15 no.3
• /
• pp.61-69
• /
• 1994

A new analytical model for the base current of Si/SiGe/Si heterojunction bipolar transistors(HBTs) has been developed. This model includes the hole injection current from the base to the emitter, and the recombination components in the space charge region(SCR) and the neutral base. Distinctly different from other models, this model includes the following effects on each base current component by using the boundary condition of the excess minority carrier concentration at SCR boundaries: the first is the effect of the parasitic potential barrier which is formed at the Si/SiGe collector-base heterojunction due to the dopant outdiffusion from the SiGe base to the adjacent Si collector, and the second is the Ge composition grading effect. The effectiveness of this model is confirmed by comparing the calculated result with the measured plot of the base current vs. the collector-base bias voltage for the ungraded HBT. The decreasing base current with the increasing the collector-base reverse bias voltage is successfully explained by this model without assuming the short-lifetime region close to the SiGe/Si collector-base junction, where a complete absence of dislocations is confirmed by transmission electron microscopy (TEM)[1].The recombination component in the neutral base region is shown to dominate other components even for HBTs with a thin base, due to the increased carrier storage in the vicinity of the parasitic potential barrier at collector-base heterojunction.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.4
• /
• pp.177-181
• /
• 2013

In this paper, silicon solar cells are analyzed regarding power conversion efficiency by changed capacitance in the depletion region. For the capacitance control in the depletion region of silicon solar cell was applied for 10, 20, 40, 80, 160 and 320 Hz frequency band character and alternating current(AC) voltage with square wave of 0.2~1.4 V. Academically, symmetry formation of positive and negative change of the p-n junction is similar to the physical effect of capacitance. According to the experiment result, because input of square wave with alternating current(AC) voltage could be observed to changed capacitance effect by indirectly method through non-linear power conversion (Voltage-Current) output. In addition, when input alternating current(AC) voltage in the silicon solar cell, changed capacitance of depletion region with the forward bias condition and reverse bias condition gave a direct effect to the charge mobility.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.5 no.2
• /
• pp.8-14
• /
• 1968

A linear current-pulse discriminator consisting: of a transistor monostable multivibrator and a Si tunnel diode is described. The input currant pulse range is about 50$\mu$A~5.23mA. The measured maximum linearity deviation is $\pm$0.75% in the input current pulse range mentioned above. The pulse resolving ability of the discriminator measured depends upon the bias current through the T, D. ; and, under the reverse bias current of 3mA, the resolving time is 2rs if allow the excess pulse amplitude of 5%. The threshold stability of the discriminator depends mainly upon the stability of the peak current Ip of the T. D. ; and, under the ambient temperature variation from $0^{\circ}C$ to 5$0^{\circ}C$, no bigger threshold variation than the maximum linearity deviation, i. e. $\pm$ 0.75%, was observed.

• Journal of the Korean Institute of Telematics and Electronics T
• /
• v.36T no.1
• /
• pp.13-18
• /
• 1999

The trap density by the stress bias in silicon oxides with different thicknesses has been investigated. The trap density by stress bias was shown to be composed of on time current and off time current. The on time trap density was composed of dc current. The off time trap density was caused by the tunneling charging and discharging of the trap in the interfaces. The on time trap density was used to estimate to the limitations on oxide thicknesses. The off time trap density was used to estimate the data retention in nonvolatile memory devices.

• Proceedings of the Korea Concrete Institute Conference
• /
• 1992.10a
• /
• pp.234-239
• /
• 1992

Design live load and girder distribution factors play an important role in the current design procedures. The fraction of vehicle load effect transferred to a single member may be selected in accordance with current KBDC. However, the specified values, both design load and distribution factors involve considerable inaccuracies, These inaccuracies relate to the uncertainties of the structural analysis, especially any bias and scatter which drives from the use of simplified load distribution factors. In this study , based on several field measurement and finite element analysis, live load distribution effects of current KBDC are evaluated. The final values of the bias and coefficient of variation of "g"according to bridge type are determined. The bridge types are reinforced concrete slab, prestressed concrete girder and steel l-beam.el l-beam.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1172-1175
• /
• 2007

We have investigated the threshold voltage shifts(${\Delta}Vth$) and drain current level shift (${\Delta}Ids$) in subthreshold region of a-Si:H TFTs induced by DC Bias (Vgs and Vds) - Temperature stress (BTS) condition. We plotted the transfer curves and the ${\Delta}Vth$ contour maps as Vds-Vds stress bias and Temperature to examine the severe damage cases on TFTs. Also, by drawing out the time-dependent transfer curve (Ids-Vgs) in the region of $10^{-8}\;{\sim}\;10^{-13}$ (A) current level, we can estimate the failure time of TFTs in a operating condition.