• Title/Summary/Keyword: bi-layered

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Study on Low Temperature Formation of Ferroelectric $Sr_{0.9}4$Bi_{2.1}$$Ta_2$$O_9$ Thin Films by Sol-Gel Process and Rapid Thermal Annealing (솔-젤법 및 급속열처리에 의한 $Sr_{0.9}4$Bi_{2.1}$$Ta_2$$O_9$ 박막의 저온형성에 관한 연구)

  • 장현호;송석표;김병호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.4
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    • pp.312-317
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    • 2000
  • Ferroelectric S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions were synthesized using sol-gel process in which strontinum ethoxide bismuth ethoxide trantalum ethoxide were used a s startring materials. SBT thin films were coated on Pt/Ti/ $SiO_2$/Si substrates by spin-coating. rapid thermal annealing (RTA) was used to promote crystallization. Thin films were annealed at $700^{\circ}C$ for 1 hr in an oxygen atmosphere. This temperature is about 10$0^{\circ}C$ lower than the usual annealing temperature for SBT thin films. Pt top-electrode was deposited by sputtering and thin films were post-annealed at $700^{\circ}C$ for 30 min. to enhance electrical properties. As the RTA temperature increased the higher 2 $P_{r}$ values were obtained. At RTA temperature being 78$0^{\circ}C$ remanent polarization of S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ thin film was 7.73 $\mu$C/cm $_2$ and the leakage current density was 1.14$\times$10$^{-7}$ A/c $m^2$ at 3 V. As RTA temperature increased the breakdown voltage was decreased. It is considered that the low-field breadown is caused by the rough surface of SBT films and forming bismuth metal in SBT thin films.films.lms.

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The Epithelial-Mesenchymal Transition During Tooth Root Development

  • Kang, Jee-Hae;Park, Jin-Ho;Moon, Yeon-Hee;Moon, Jung-Sun;Kim, Sun-Hun;Kim, Min-Seok
    • International Journal of Oral Biology
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    • v.36 no.3
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    • pp.135-141
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    • 2011
  • Hertwig's epithelial root sheath (HERS) consists of bi-layered cells derived from the inner and outer dental epithelia and plays important roles in tooth root formation as well as in the maintenance and regeneration of periodontal tissues. With regards to the fate of HERS, and although previous reports have suggested that this entails the formation of epithelial rests of Malassez, apoptosis or an epithelial-mesenchymal transformation (EMT), it is unclear what changes occur in the epithelial cells in this structure. This study examined whether HERS cells undergo EMT using a keratin-14 (K14) cre:ROSA 26 transgenic reporter mouse. The K14 transgene is expressed by many epithelial tissues, including the oral epithelium and the enamel organ. A distinct K14 expression pattern was found in the continuous HERS bi-layer and the epithelial diaphragm were visualized by detecting the ${\beta}$-galactosidase (lacZ) activity in 1 week postnatal mice. The 2 and 4 week old mice showed a fragmented HERS with cell aggregation along the root surface. However, some of the lacZ-positive dissociated cells along the root surface were not positive for pan-cytokeratin. These results suggest that the K14 transgene is a valuable marker of HERS. In addition, the current data suggest that some of the HERS cells may lose their epithelial properties after fragmentation and subsequently undergo EMT.

Effects of a Au-Cu Back Layer on the Properties of Spin Valves

  • In, Jang-Sik;Kim, Sang-Hoon;Kang, Jae-Yong;Tiwari, Ajay;Hong, Jong-Ill
    • Journal of Magnetics
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    • v.12 no.3
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    • pp.118-123
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    • 2007
  • We have studied the effect of Au-Cu back layer system ${\sim}10{\AA}$ thick on the properties of a spin valve. The back layers were Cu, Au, co-sputtered $Cu_xAu_{1-x}$, laminated $[Au/Cu]_n$. and bi-layer [Au/Cu]. When Au was added to the Cu, the resistance of the spin valve abruptly increased most likely due to impurity scattering. The GMR values were not increased significantly for all the structures. In the case of co-sputtered $Cu_xAu_{1-x}$, the changes in the resistance, ${\Delta}R$, was increased at a composition of ${\sim}Au_{0.5}Cu_{0.5}$. This increase in ${\Delta}R$ is due to increase in the resistance and not from the enhanced spin-dependent scattering. The structural analyses showed that the orthorhombic $Au_{0.5}Cu_{0.5}$ was formed in the back layer instead of the face-centered tetragonal $Au_{0.5}Cu_{0.5}$ as we expected. Thermal annealing over $400^{\circ}C$ may be required to have face-centered tetragonal in the $10{\AA}$ thick ultra-thin film. In the case of a laminated or bi-layered back layer, the properties of the spin valve were improved, which may be attributed to the increase in the mean free path of conduction electrons.

Annealing Time Properties of SBT Capacitors by RF Sputtering method (RF 스퍼터링법에 의한 SBT 커패시터의 열처리 시간 특성)

  • Cho, Choon-Nam;Oh, Yong-Cheul;Kim, Jin-Sa;Shin, Cheol-Gi;Lee, Dong-Gu;Choi, Woon-Shick;Lee, Sung-Ill;Lee, Joon-Ung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.817-820
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    • 2004
  • The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using a RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing time were studied. In the SEM images, Bi-layered perovskite phase was crystallized at 10min and grains largely grew with annealing tune. SBT thin films are transformed from initial amorphous phase to the fully formed layer-structured perovskite. During the annealing process at $750^{\circ}C$, we found that an fluorite-like stage is formed after 3min. In the XRD pattern, the SBT thin films after 3min annealing time had (105) orientation. The ferroelectric properties of SBT capacitor with annealing time represent a favorable properties at 60 min. The maximum remanent polarization and the coercive electric field with 60 min are $12.40C/cm^2$ and 30kV/cm, respectively. The leakage current density with 60min is $6.81{\times}10^{-10}A/cm^2$.

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A Study on the Restoration of a Low-Resoltuion Iris Image into a High-Resolution One Based on Multiple Multi-Layered Perceptrons (다중 다층 퍼셉트론을 이용한 저해상도 홍채 영상의 고해상도 복원 연구)

  • Shin, Kwang-Yong;Kang, Byung-Jun;Park, Kang-Ryoung;Shin, Jae-Ho
    • Journal of Korea Multimedia Society
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    • v.13 no.3
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    • pp.438-456
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    • 2010
  • Iris recognition uses a unique iris pattern of user to identify person. In order to enhance the performance of iris recognition, it is reported that the diameter of iris region should be greater than 200 pixels in the captured iris image. So, the previous iris system used zoom lens camera, which can increase the size and cost of system. To overcome these problems, we propose a new method of enhancing the accuracy of iris recognition on low-resolution iris images which are captured without a zoom lens. This research is novel in the following two ways compared to previous works. First, this research is the first one to analyze the performance degradation of iris recognition according to the decrease of the image resolution by excluding other factors such as image blurring and the occlusion of eyelid and eyelash. Second, in order to restore a high-resolution iris image from single low-resolution one, we propose a new method based on multiple multi-layered perceptrons (MLPs) which are trained according to the edge direction of iris patterns. From that, the accuracy of iris recognition with the restored images was much enhanced. Experimental results showed that when the iris images down-sampled by 6% compared to the original image were restored into the high resolution ones by using the proposed method, the EER of iris recognition was reduced as much as 0.133% (1.485% - 1.352%) in comparison with that by using bi-linear interpolation

Schottky Barrier Free Contacts in Graphene/MoS2 Field-Effect-Transistor

  • Qiu, Dongri;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.209.2-209.2
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    • 2015
  • Two dimensional layered materials, such as transition metal dichalcogenides (TMDs) family have been attracted significant attention due to novel physical and chemical properties. Among them, molybdenum disulfide ($MoS_2$) has novel physical phenomena such as absence of dangling bonds, lack of inversion symmetry, valley degrees of freedom. Previous studies have shown that the interface of metal/$MoS_2$ contacts significantly affects device performance due to presence of a scalable Schottky barrier height at their interface, resulting voltage drops and restricting carrier injection. In this study, we report a new device structure by using few-layer graphene as the bottom interconnections, in order to offer Schottky barrier free contact to bi-layer $MoS_2$. The fabrication of process start with mechanically exfoliates bulk graphite that served as the source/drain electrodes. The semiconducting $MoS_2$ flake was deposited onto a $SiO_2$ (280 nm-thick)/Si substrate in which graphene electrodes were pre-deposited. To evaluate the barrier height of contact, we employed thermionic-emission theory to describe our experimental findings. We demonstrate that, the Schottky barrier height dramatically decreases from 300 to 0 meV as function of gate voltages, and further becomes negative values. Our findings suggested that, few-layer graphene could be able to realize ohmic contact and to provide new opportunities in ohmic formations.

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Effect of a TiO2 Buffer Layer on the Properties of ITO Films Prepared by RF Magnetron Sputtering

  • Kim, Daeil
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.5
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    • pp.242-245
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    • 2013
  • Sn-doped $In_2O_3$ (ITO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on bare glass and $TiO_2$-deposited glass substrates to investigate the effect of a $TiO_2$ buffer layer on the electrical and optical properties of ITO films. The thicknesses of $TiO_2$ and ITO films were kept constant at 5 and 100 nm, respectively. As-deposited ITO single layer films show an optical transmittance of 75.9%, while $ITO/TiO_2$ bi-layered films show a lower transmittance of 76.1%. However, as-deposited $ITO/TiO_2$ films show a lower resistivity ($9.87{\times}10^{-4}{\Omega}cm$) than that of ITO single layer films. In addition, the work function of the ITO film is affected by the $TiO_2$ buffer layer, with the $ITO/TiO_2$ films having a higher work-function (5.0 eV) than that of the ITO single layer films. The experimental results indicate that a 5-nm-thick $TiO_2$ buffer layer on the $ITO/TiO_2$ films results in better performance than conventional ITO single layer films.

Ferroelectric and Leakage current Properteis of SBT Capacitor with post-annealing Temperature (후속 열처리에 따른 SBT 캐패시터의 강유전 특성과 누설전류 특성)

  • 오용철;조춘남;김진사;신철기;박건호;최운식;김충혁;이준웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.668-671
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    • 2001
  • The Sr$\_$0.8/Si$\_$2.4/Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. With increasing post-annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], Bi-layered perovskite phase was crystallized above 650[$^{\circ}C$]. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}$C/$\textrm{cm}^2$], 48[kV/cm] respectively. The leakage current density of SBT capacitor at post-annealing temperature of 750[$^{\circ}C$] is 1.01${\times}$10$\^$-8/ A/$\textrm{cm}^2$ at 100[kV/cm]. The fatigue characteristics of SBT thin films did not change up to 10$\^$10/ switching cycles.

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A Case of Eucoleus aerophilus Infection in Jeju Weasel (Mustela sibirica quelpartis)

  • Han, Jeong-Hee;Yoon, Young-Min;Yang, Hyoung-Seok;Kim, Jae-Hoon
    • Journal of Veterinary Clinics
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    • v.34 no.5
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    • pp.384-387
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    • 2017
  • A dead male Jeju weasel with clinical signs of severe dehydration and moribund was submitted for the necropsy. Grossly, purple-red ecchymoses were scattered in the surface of the entire lungs. Milky-white mucoid materials occupied in the left bronchial lumens. Histopathologically, an adult worm with thick cuticle layer surrounded by chronic inflammatory cells was embedded in the left caudal lung lobe. Numerous oval or barrel-shaped parasitic eggs with muco-purulent exudates were observed in the dilated bronchus of another section of left caudal lobe. Operculate parasitic eggs showed typical morphologic characteristics such as barrel shape with asymmetry bipolar plugs and thick bi-layered wall. Based on the histopathologic findings and morphological characteristics of parasitic eggs in the pulmonary tissue section, this case was diagnosed as verminous pneumonia associated Eucoleus aerophilus infection in Jeju weasel.

Properties of $Sr_{0.8}Bi_{2.3}{(Ta_{1-x}Nb_{x})}_{2}O_{9+{\alpha}}$ Thin Films

  • Park, Sang-Jun;Jang, Gun-Eik
    • Transactions on Electrical and Electronic Materials
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    • v.1 no.1
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    • pp.22-25
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    • 2000
  • Polycrystalline SBTN layered ferroelectric thin film with various Nb mole ratios were prepared by sol-gel method Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperature and characterized in terms of phase and microstructure. The films were crystallized with a high (105) diffraction intensity and had rodike structure, SBTN films fired at 800$^{circ}C$ revealed standard hysteresis loops with no fatigue for up to 10$^{10}$ cycles. At an applied voltage of 5V the dielectric constant($varepsilon$) , dissipation factor (tan $delta$), remanent polarization(ZPr) and coercive field(Ec) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$) $O_{9+}$$alpha$/ thin film(x=0.1) prepared on Pt/ $SiO_2$/Si (100) were about 277.7, 0.042, 3.74$mu$C/$textrm{cm}^2$, and 24.8kv/cm respectively.ly.y. respectively.ly.y.y..

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