• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.153-153
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• 1999

platinum 유기착화합물을 사용하여 유리 기판 위에 Pt를 증착시켰다. Pt를 증착하기 위하여 Pt 착화합물을 용해 시킨 후, 유리 기판을 용액속에 담근 후 가열하여 Pt막을 증착하였다. 증착 후 Pt의 면저항은 200~75$\Omega$의 값을 나타내어 비교적 높은 저항값을 나타내었다. 높은 저항값을 낮추기 위해 진공 10-5Torr에서 50, 100, 150, 25$0^{\circ}C$로 열처리를 하였다. 이러한 저항값을 변화의 원인을 살펴보기 위하여 X-선 회절법을 이용하여 결정성의 변화를 살펴보았고, 화학적 조성의 변화는 X-ray 광전자 분광법을 이용하여 조사하였다. 열처리 전 Pt막은 비정질 상태를 나타내었으나, 6$0^{\circ}C$에서 30분간 열처리한 후에는 결정성이 증가하는 것으로 관찰되었다. 열처리 후 결정방향은 {111] 방향이 주 방향이였으며 [002] 방향의 피크도 관찰되었다. 따라서 성장된 막은 다결정 막임을 알 수 있었다. XPS를 이용하여 조성을 조사하여 본 결과 열처리하지 않은 시료의 경우 유기물과 반응하여 Pt의 피크가 넓게 나타나나 열처리 후에는 유기물이 분해되어 Pt의 고유한 피크를 관찰할 수 있었다. 따라서 전기전도도의 변화는 유기물의 분해를 통하여 순수한 Pt로 변해가면서 감소하는 것으로 생각되어 지며 결정성 또한 전기전도도 변화에 중요한 역할을 함을 알 수 있었다. 기존의 방법을 이용하여 Pt를 증착할 경우 기판과 쉽게 박리 되는 현상이 관찰되었으나 본 방법을 이용하여 증착된 Pt 박막의 경우 열처리 후에는 기판과의 접착력이 기존의 방법보다 뛰어나 박리되는 현상이 관찰되지 않았다.$ 이상에서 안정한 것을 볼 수 있었다. 텅스텐 박막은 $\alpha$ 및 $\beta$-W 구조를 가질 수 있으나 본 연구에서 성장된 텅스텐은 $\alpha$-W 구조를 가지는 것을 XRD 측정으로 확인하였다. 성장된 텅스텐 박막의 저항은 구조에 따라서 변화되는 것으로 알려져 있다. 증착조건에 따른 저항의 변화는 SiH4 대 WF6의 가스비, 증착온도에 따라서 변화하였다. 특히 온도가 40$0^{\circ}C$ 이상, SiH4/WF6의 비가 0.2일 경우 텅스텐을 증착시킨 후에 열처리를 거치지 않은 경우에도 기존에 발표된 저항률인 10$\mu$$\Omega$.cm 대의 값을 얻을 수 있었다. 본 연구를 통하여 산화막과의 접착성 문제를 해결하고 낮은 저항을 얻을 수 있었으나, 텅스텐 박막의 성장과정에 의한 게이트 산화막의 열화는 심각학 문제를 야기하였다. 즉, LPCVD 과정에서 발생한 불소 또는 불소 화합물이 게이트의 산화막에 결함을 발생시킴을 확인하였다. 향후, 불소에 의한 게이트 산화막의 열화를 최소화시킬 수 있는 공정 조건의 최저고하 또는 대체게이트 산화막이 적용될 경우, 개발된 연구 결과를 산업체로 이전할 수 있는 가능성이 높을 것을 기대된다.박막 형성 메카니즘에 큰 영향을 미침을 알 수 있었다. 또한 은의 전기화학적 다층박막 성장은 MSM (monolayer-simultaneous-multilayer) 메카니즘을 따름을 확인하였다. 마지막으로 구조 및 양이 규칙적으로 조절되는 전극의 응용가능성이 간단히 논의될 것이다.l 성장을 하였다는 것을 알 수 있었다. 결정성

• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.283-288
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• 2019

MCrAlY overaly coatings are used as oxidation barrier coatings to prevent degradation of the underlying substrate in high temperature and oxidizing environment of the hot section of gas turbines. Therefore, oxidation resistance in high temperature is important property of MCrAlY coatings. Also, coefficients of thermal expansion (CTE) of MCrAlY have middle value of that of Ni-based superalloys and oxides, which have the effect of preventing the delamination of the surface oxides. Cyclic oxidation test is one of the most useful methods for evaluating the high temperature durability of coatings used in gas turbines. In this study, NiCoCrAlY overlay coatings were formed on Inconel 792(IN 792) substrates by vacuum plasma spraying process. Vacuum plasma sprayed NiCoCrAlY coatings and IN 792 susbstrates were exposed to 1000℃ one-hour cyclic oxidation environment. NiCoCrAlY coatings showed lower weight gain in short-term oxidation. In long-term oxidation, IN 792 substrates showed higher weight loss due to delamination of surface oxide but NiCoCrAlY coatings showed lower weight loss. X-ray diffraction (XRD) analysis showed α-Al2O3 and NiCr₂O₄ was formed during the cyclic oxidation test. Through cross-section observation using scanning electron microscopy (SEM) and electron back scatter diffraction (EBSD) analysis, thermally grown oxide (TGO) layer composed of α-Al₂O₃ and NiCr₂O₄ was formed and the thickness of TGO increased during 1000℃ cyclic oxidation test. β phase in upper side of NiCoCrAlY coating was depleted due to oxidation of Al and outer beta depletion zone thickness also increased as the cyclic oxidation time increased.

• Bulletin of the Korean Chemical Society
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• v.22 no.1
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• pp.30-36
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• 2001

The crystal structures of fully dehydrated $Pd^{2+}$ - and $TI^{+}$ -exchanged zeolite X, $Pd_{18}TI_{56}Si_{100}Al_{92}O_{384}(Pd_{18}TI_{50-}X$, a = $24.935(4)\AA$ and $Pd_{21}TI_{50}Si_{100}Al_{92}O_{384}(Pd_{21}TI_{50-}X$ a = $24.914(4)\AA)$, have been determined by single-crystal X-ray diffraction methods in the cubic space group Fd3 at $21(1)^{\circ}C.$ The crystals were prepared using an exchange solution that had a $Pd(NH_3)_4Cl_2\;:TINO_3$ mole ratio of 50 : 1 and 200 : 1, respectively, with a total concentration of 0.05M for 4 days. After dehydration at $360^{\circ}C$ and 2 ${\times}$$10^{-6}$ Torr in flowing oxygen for 2 days, the crystals were evacuated at $21(1)^{\circ}C$ for 2 hours. They were refined to the final error indices $R_1$ = 0.045 and $R_2$ = 0.038 with 344 reflections for $Pd_{18}Tl_{56-}X$, and $R_1$ = 0.043 and $R_2$ = 0.045 with 280 reflections for $Pd_{21}Tl_{50-}X$; I > $3\sigma(I).$ In the structure of dehydrated $Pd_{18}Tl_{56-}X$, eighteen $Pd^{2+}$ ions and fourteen $TI^{+}$ ions are located at site I'. About twenty-seven $TI^{+}$ ions occupy site II recessed $1.74\AA$ into a supercage from the plane of three oxygens. The remaining fifteen $TI^{+}$ ions are distributed over two non-equivalent III' sites, with occupancies of 11 and 4, respectively. In the structure of $Pd_{21}Tl_{50-}X$, twenty $Pd^{2+}$ and ten $TI^{+}$ ions occupy site I', and one $Pd^{2+}$ ion is at site I. About twenty-three $TI^{+}$ ions occupy site II, and the remaining seventeen $TI^{+}$ ions are distributed over two different III' sites. $Pd^{2+}$ ions show a limit of exchange (ca. 39% and 46%), though their concentration of exchange was much higher than that of $TI^{+}$ ions. $Pd^{2+}$ ions tend to occupy site I', where they fit the double six-ring plane as nearly ideal trigonal planar. $TI^{+}$ ions fill the remaining I' sites, then occupy site II and two different III' sites. The two crystal structures show that approximately two and one-half I' sites per sodalite cage may be occupied by $Pd^{2+}$ ions. The remaining I' sites are occupied by $TI^{+}$ ions with Tl-O bond distance that is shorter than the sum of their ionic radii. The electrostatic repulsion between two large $TI^{+}$ ions and between $TI^{+}$ and $Pd^{2+}$ ions in the same $\beta-cage$ pushes each other to the charged six-ring planes. It causes the Tl-O bond to have some covalent character. However, $TI^{+}$ ions at site II form ionic bonds with three oxygens because the super-cage has the available space to obtain the reliable ionic bonds.

• Journal of Radiation Industry
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• v.10 no.4
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• pp.189-192
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• 2016

$^{68}Ga$ has emerged as a promising candidate for non-invasive diagnostic imaging within Positron Emission Tomography (PET) because of its advantageous radiochemical characteristics ($t_{1/2}=68min$, ${\beta}^+$ yield ~89%). $^{68}Ga$ forms a stable chelation with various ligands and it is possible to be quickly and easily study using a $^{68}Ge/^{68}Ga$ generator. Commercial $^{68}Ge/^{68}Ga$ generators are chromatographic system using the inorganic materials such as alumina and tin dioxide which are employed as column matrixes for $^{68}Ge$. In this study, we tried out to make $^{68}Ge/^{68}Ga$ generator system with the $^{68}GeO_2$ microstructures for column matrix. $^{68}Ge$ tends to have stable bond with oxide as $^{68}GeO_2$ microstructures. The $^{68}GeO_2$ has been synthesized by hydrolysis of $GeCl_4$ (sol-gel method) and characterized by X-ray diffraction and scanning electron microscope for geometrical analysis. The stability of $GeO_2$ was tested using eluents with diverse solvents(water, ethanol and 0.1 N HCl). The radioactivity of $^{68}Ga^{3+}$ in eluate through $GeO_2$ was measured to prove a function as column material for a generator.

• Journal of Convergence for Information Technology
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• v.11 no.8
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• pp.92-99
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• 2021

Light-scattering fine particulate matter monitors can measure particulate matter (PM) concentrations in every second and can be designed in a portable size. They can measure the concentrations of various PM sizes (PM_1.0, PM_2.5, PM_4.0 and PM₁₀) with a single sensor. They measure the number and size of particulate matters and convert them to weight per volume (concentration). These devices show a large error for asian dust. This paper proposes a scheme that compensates the PM_2.5 concenstration error for asian dust by multiple linear regression machine learning in light-scattering PM monitors. This scheme can be effective with only two or three types of PM sizes. The experimental results compare a beta-ray PM monitor of national institute of environmental research and a light-scattering PM monitor during a month. The correlation coefficient (R²) of theses two devices was 0.927 without asian dust, but it was 0.763 due to asian dust during the entire experimental period and improved to 0.944 by the proposed machine learning.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.4
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• pp.121-127
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• 2022

β-Gallium oxide (Ga₂O₃), an ultra-wide bandgap semiconductor, has attracted great attention due to its promising applications for high voltage power devices. The most stable phase among five different polytypes, β-Ga₂O₃ has the wider bandgap of 4.9 eV and higher breakdown electric field of 8 MV/cm. Furthermore, it can be grown from melt source, implying higher growth rate and lower fabrication cost than other wide bandgap semiconductors such as SiC, GaN and diamond for the power device applications. In this study, β-Ga₂O₃ bulk crystals were grown by the edge-defined film-fed growth (EFG) process. The growth direction and the principal surface were set to be the [010] direction and the (100) plane of the β-Ga₂O₃ crystal, respectively. The spectra measured by Raman an alysis could exhibit the crystal phase an d impurity dopin g in the β-Ga₂O₃ ingot, and the crystallinity quality and crystal direction were analyzed using high-resolution X-ray diffraction (HRXRD). The crystal quality and various properties of as-grown β-Ga₂O₃ ribbon was systematically analyzed in order to investigate the spatial variation in entire crystal grown by EFG method.

• Journal of the Korea institute for structural maintenance and inspection
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• v.27 no.4
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• pp.70-77
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• 2023

Fine dust is a cause of serious ecological problems, and fugitive dust generated from construction sites is a major source of fine dust in Korea. However, at construction sites, including concrete manufacturing industry sites, measurements are rarely made at the fugitive dust generation stage, and passive removal methods are the majority. Therefore, in this study, a fugitive dust measurement method suitable for managing fugitive dust generated during aggregate unloading in the concrete manufacturing industry sites was selected. In addition, the purpose was to analyze the amount of fugitive dust reduction according to the operation of the reduction system by applying the automatic fugitive dust reduction system to the aggregate unloading site. As a result, the reliability of the light scattering method was secured through the comparative measurement of the beta-ray absorption method and the light scattering method, and the light scattering method correction coefficient was calculated and applied to the measured value of the fugitive dust particle mass concentration at the concrete manufacturing industry sites. In addition, the fugitive dust reduction rate according to the operation of the automatic fugitive dust reduction system was derived.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4660-4670
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• 2022

Hydroxyurea (HU) is a novel salt-free reductant used potentially for the separation of U/Pu in the advanced PUREX process. In this work, the radiation stability of HU were systematically investigated in solution by examining the effects of the type of rays (α, β, and γ irradiations), the absorbed dose (10-50 kGy), and the HNO₃ concentration (0-3 mol L^-1). The influence degree on HU radiolysis rates followed the order of the absorbed dose > the ray type > the HNO₃ concentration, but the latter two had moderate effects on HU radiolysis products where NH₄⁺ and NO₂^- were found to be the most abundant ones, suggesting that the differences of α, β, and γ rays should be considered in the study of irradiation effects. The radiolysis mechanism was explored using density functional theory (DFT) calculations, and it proposed the dominant radiolysis paths of HU, indicating that the radiolysis of HU was mainly a free radical reaction among ·H, e_aq^-, H₂O, intermediates, and the radiolytic free radical fragments of HU. The results reported here provide valuable insights into the mechanistic understanding of HU radiolysis under α, β, and γ irradiations and reliable data support for the application of HU in the reprocessing of spent fuel.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.189-198
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• 2000

The stochiometric mixture of evaporating materials for the $CuGaSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0}$ and $c_0$ were 5.615 $\AA$ and 11.025 $\AA$, respectively. To obtains the single crystal thin films, $CuGaSe_2$mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5$\mu\textrm{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 150 K and by polar optical scattering in the temperature range 150 K to 293 K. The optical energy gaps were found to be 1.68 eV for CuGaSe$_2$sing1e crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by $\alpha$ = $9.615{\times}10^{-4}$eV/K, and $\beta$ = 335 K. From the photocurrent spectra by illumination of polarized light of the $CuGaSe_2$single crystal thin films. We have found that values of spin orbit coupling $\Delta$So and crystal field splitting $\Delta$Cr was 0.0900 eV and 0.2498 eV, respectively. From the PL spectra at 20 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626 eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352 eV, 0.0932 eV, respectively.

• Radiation Oncology Journal
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• v.14 no.4
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• pp.265-279
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• 1996

Damage produced by radiation elicits a complex response in mammalian cells, including growth rate changes and the induction of a variety of genes associated with growth control and apoptosis. At doses of 10,000 cGy or greater, the exposed individual was killed in a matter of minutes to a couple of days, with symptoms consistent with pathology of the central nervous system(CNS) including degenerative changes. The nature of the damage in irradiated cells underlies the unique hazards of ionizing radiation. Radiation injury to CNS is a rare event in clinical medicine, but it is catastrophic for the patient in whom it occurs. The incidence of cerebral necrosis has been reported as high as 16% for doses greater than 6,000 cGy. In this study, the effect of radiation on brain tissue was studied in vivo. Jun and p53 genes in the rat brain were induced by whole body irradiation of rat with 600Co in doses between 1 Gy and 100 Gy and analyzed for expression of jun and p53 genes at the postirradiation time up to 6 hours. Northern analyses were done using 1.8 Kb & 0.8 Kb-pGEM-2-JUN/Eco RI/Pst I fragments, 2.0 Kb-php53B/Bam HI fragment and ,1.1 Kb-pBluescript SK--ACTIN/Eco RI fragment as the digoxigenin or [${\alpha}^{32}P$] dCTPlabeled probes for Jun, p53 and ${\beta}$-actin genes, respectively. Jun gene seemed to be expressed near the threshold levels in 1 hour after irradiation of $^{60}$Co in dose less than 1 Gy and was expressed in maximum at 1 hour after irradiation of $^{60}$Co in dose of 30 Gy. Jun was expressed increasingly with time until 5 or 6 hours after irradiation of $^{60}$Co in doses of 1 Gy and 10 Gy. After irradiation of $^{60}$Co in dose between 20 Gr and 100 Gy, the expression of Jun was however increased to peak in 2 hours and decreased thereafter. p53 gene in this study also seemed to be expressed near the threshold levels in 1 hour after irradiation of $^{60}$Co in dose less than 1 Gy and was expressed in maximum at 6 hours after irradiation of $^{60}$Co in dose of 1 Gy, p53 was expressed increasingly with time until 5 or 6 hours after irradiation of $^{60}$Co in dose between 1 Gy and 40 Gy. After irradiation of $^{60}$Co in doses of 50 Gy and 100 Gy, the expression of p53 was however increased to peak in 2 hours and decreased thereafter. The expression of Jun and p53 genes was not correlative in the brain tissue from rats. It seemed to be very important for the establishment of the optimum conditions for the animal studies relevant to the responses of genes inducible on DNA damage to ionizing radiation in mammalian cells. But there are many limitations to the animal studies such as the ununiform patterns of gene expression from the tissue because of its complex compositions. It is necessary to overcome the limitations for development of in situ Northern analysis.