• 제목/요약/키워드: basic research

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Novel GST/TiAlN 구조를 갖는 상변화 메모리 소자의 전기적 특성 (Electrical Properties of Phase Change Memory Device with Novel GST/TiAlN structure)

  • 이남열;최규정;윤성민;류상욱;박영삼;이승윤;유병곤
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.118-119
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    • 2005

  • PRAM (Phase Change Random Access Memory) is well known to use reversible phase transition between amorphous (high resistance) and crystalline (low resistance) states of chalcogenide thin film by electrical Joule heating. In this paper, we introduce a stack-type PRAM device with a novel GST/TiAlN structures (GST and a heating layer of TiAlN), and report its electrical switching properties. XRD analysis result of GST thin film indicates that the crystallization of the GST film start at about $200^{\circ}C$. Electrical property results such as I-V & R-V show that the phase change switching operation between set and reset states is observed, as various input electrical sources are applied.

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파장선택형 8채널 WDM 광원 (Wavelength Selectable 8 Channel WDM Transmitter)

  • Kim, Jeha;Chung, Yong-Duck;Ryu, Sang-Wan;Sim, Jae-Sik;Kim, Sung-Bock
    • 한국광학회:학술대회논문집
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    • 한국광학회 2003년도 하계학술발표회
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    • pp.96-97
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    • 2003

  • We developed a wavelength selectable 8-channel WDM otpical transmitter. The module consisted of two 4-channel DFB-LD arrays monolithically integrated with a 1x4 Power combiner and an SOA. It operated at 1550 nm and 200 GHz spacing.

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