• Title/Summary/Keyword: barrier height

Search Result 413, Processing Time 0.032 seconds

Study on the Temperature Dependence of Schottky Barrier Height (Schottdy Barrier Height의 온도의존성에 관한 연구)

  • Sim, Seong-Yeop;Lee, Dong-Geon;Kim, Dong-Ryeol;Kim, In-Su;Kim, Mal-Mun;Bae, In-Ho;Han, Byeong-Guk;Lee, Sang-Yun
    • Korean Journal of Materials Research
    • /
    • v.5 no.8
    • /
    • pp.1020-1025
    • /
    • 1995
  • The Schottky barrier hieght(SBH) of Au/n-Si(100) were investigated by current-voltage(I-V) and capacitance voltage(C-V) measurement within a temperature range of l00K∼300K. The values of SBH at room temperature obtained from these two measurements were (0.79${\pm}$0.02)eV. The SBH obtained from the C-V measurement was temperature independent, while that obtained from the I-V measurement decreased linearly with decreasing temperature. This indicates that the Schottky diode has deviated from the thermionic emission theory at low-temperature, Thus, other current transport processes were considered and the contribution of recombination current was dominant at low temperature. We found that it leads to a lower SBH value. Thus, the conflicating results between C-V and I-V measurement were explained, C-V measurement is believed to yield mare reliable SBH values in present study since it is not affected by the current transport uncertainties.

  • PDF

The Effect of Dielectric Thickness and Barrier Rib Height on Addressing Time of Coplanar ac PDP

  • Lee, Sung-Hyun;Kim, Young-Dae;Shin, Joong-Hong;Cho, Jung-Soo;Park, Chung-Hoo
    • Journal of KIEE
    • /
    • v.11 no.1
    • /
    • pp.41-45
    • /
    • 2001
  • The addressing time should be reduced by modifying cell structure and/or driving method in order to replace the dual scan system by single scan and increase the luminance in large ac plasma display panel(PDP). In this paper, the effects of the dielectric layer thickness and the barrier rib height on the addressing time of ac PDP are investigated. It is found out that the addressing time was decreased with decreasing thickness of dielectric layer on the front glass and thickness of white dielectric layer on the rear glass. The decreasing rate were 160ns/10${\mu}{\textrm}{m}$ and 270nsd/10${\mu}{\textrm}{m}$, respectively. Also in case of decreasing the height of barrier rib, addressing time was decreased at the rate of 550ns/10${\mu}m$.

  • PDF

A Study on the Insertion Loss of Noise Barrier with the Variation of Top Shape (방음벽 상단부 형상에 따른 삽입손실 연구)

  • 정성수;김용태;이우섭
    • The Journal of the Acoustical Society of Korea
    • /
    • v.21 no.7
    • /
    • pp.624-631
    • /
    • 2002
  • The insertion loss of the noise barriers with several top shape is measured in an anechoic room by using a reduced scale model test. The insertion loss differences between a straight vertical barrier having 0.3 m height and several barriers with simple top shaped are compared. The results show that the latter is more effective than the former and absorptive barrier is more effective than the reflective one. Among the barrier types of 'T', 'Y', and '(equation omitted)', type 'Y' is the best one and the rest have similar effect. This result is well agree with Alfredson (PIOC. Inter-Noise 95, p. 381, 1995)'s but contradict to May (J. Sound Vb. 71, p. 73, 1980)'s. Therefore, it is difficult to determine which type is the best. In order to find out this discrepancy, boundary element method is adopted and the result shows one can have different result because each supposed different experimental conditions like height of noise barrier, positions of sound source and receiver, etc.

A Study on the Interference Effect of the Noise Barrier Edge for Railway Noise Reduction (철도소음 저감을 위한 방음벽 상단 간섭효과에 관한 연구)

  • 심상덕;장강석;김영찬;김두훈
    • Proceedings of the KSR Conference
    • /
    • 2002.05a
    • /
    • pp.577-583
    • /
    • 2002
  • We have made known the study of shape development of interference device for vehicle noise control. It's primary object greatly attenuate the noise due to transport vehicle by small products installed on the noise barrier edge. Also, it is able to improve the insertion loss of a noise barrier without increasing the height of noise barrier. The present time, we set up a newly manufactured products on the noise barrier edge and testify to it's the performance use of an experiment and evaluation for the reduction of railway noise. In this paper the frequency characteristic of interference device of noise barriers with attached newly developed products in terms of shape, absorptive material and split panel, are examined using field test around of railroad.

  • PDF

Effects of Polyethylene Net Barrier on the Control of Aphid - borne Potato Virus Y in Tobacco (폴리에칠렌 차단망 설치에 의한 연초의 진딧물 전염 PVY 방제효과)

  • Chae, S.Y.;Kim, S.S.;Park, E.K.
    • Journal of the Korean Society of Tobacco Science
    • /
    • v.16 no.1
    • /
    • pp.84-89
    • /
    • 1994
  • Potato virus Y (PVY) is an important viral disease in burley tobacco in Korea and is mostly transmitted by green peach aphid, Myzus penicae, in nature. Effects of barrier nets on the immigration of the aphid population into tobacco fields and on the control of PVY were investigated in 3 tobacco fields with 1.8 m - height polyethylene (PE) nets on their outer - sides in Iseo - Myeon, Wanju - Kun, Cheonbuk. Immigration of aphids to the tobacco yields started at late April and reached maximum at early June. The immigrating aphid population was apparently blocked by the barrier nets to be reduced by 54-73%. PVY severity was also reduced by the barrier nets. However, the control value was variable, ranging 24-67%, which suggests that effect of the PE net barrier on the prevention of aphid-borne virus might be variable depending on the location and slope of the fields.

  • PDF

Self-Consistent Calculation of Electronic Subband Structure at GaInAs/InP Heterojunction (Self-Consistent 방법에 의한 GaInAs/InP 이종접합에서의 전자 부밴드 구조계산)

  • Kong, Joon-Jin;Park, Seong-Ho;Kim, Choon-Won;Han, Baik-Hyung;,
    • Journal of the Korean Institute of Telematics and Electronics
    • /
    • v.26 no.1
    • /
    • pp.38-47
    • /
    • 1989
  • Calculated results for subband structures of electrons in GaInAs/InP hegerojunctions are presented, and their sensitivity to two parameters background impurity concentrations in the GaInAs, heterojunction barrier height-is examined. Energy levels, Fermi level and population of the ground energy level are increased with background impurity concentrations. The difference of the ground and first-excited energy levels is also increased with the increase of barrier height. However, the difference of the energy levels is almost invariable with barier height. But, population of the ground energy level decreases, but that of the first-excited energy level shows a slight increase.

  • PDF

Evaluation of Reduction in Reflection Sound bound from a Shaped Noise Barrier Panel (형상 방음벽 패널의 반사음 저감효과 평가)

  • Lee, Jaiyeop;Kim, Ilho
    • International Journal of Highway Engineering
    • /
    • v.17 no.5
    • /
    • pp.19-24
    • /
    • 2015
  • PURPOSES : The noise, which is typically generated by fast moving vehicles, can be intercepted by installing a noise barrier with a soundproof panel. However, reflections from the panels cause secondary noise, and hence lower the effectiveness of the panels. In this study, the reduction of reflection noise by considering the shape, especially zigzag one, of the soundproof panel have been evaluated. METHODS : The simulation model used in this study was Nord2000, which simulates real-road situations effectively. Based on the simulation results, the joining angle of $133^{\circ}$ with the pattern width (a) equal to 2 m and the projection height (b) equal to 0.5 m was adapted in the zigzag shape as the best profit designing factors. RESULTS: The measuring results at middle height, 15 m showed reduction at all points except the point with average -1.6 dB. At a greater height of 30 m, 2 points showed reduction. A real-sized facility was constructed to investigate the reflected sound from a zigzag shaped panel up to the height of 5 m. CONCLUSIONS: The reduction effects were detected in all the receive points in the range of 2-6 m distances and 1-5 m heights comparing the plane panel. Compared to plane panel, the noises are reduced at an average of 2.4 dBA.

Width Control in the Photo patterning of PDP Barrier Ribs

  • Kim, Dong-Ju;Kim, Soon-Hak;Hur, Young-June;Kim, Duck-Gon;Lee, Sam-Jong;Jung, Sang-Kwon;Kim, Myeug-Chan;Park, Lee-Soon
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2006.08a
    • /
    • pp.910-912
    • /
    • 2006
  • Barrier ribs in plasma display panels (PDPs) function to maintain the discharge space between the glass plates as well as to prevent optical cross-talking. The barrier ribs currently employed are typically $300{\mu}m$ pitch, $110{\sim}120{\mu}m$ in height, with upper and lower widths of $50{\mu}m$ and $80{\mu}m$, respectively. It has been reported that barrier ribs can be fabricated by screen-printing, sand blasting, etching and photolithographic processes. In this study, photosensitive barrier rib pastes were formulated and systematically evaluated in terms of photolithographic process variables such as printing, drying, UV exposure, development and sintering. It was found that the use of UV absorbent, polymerization inhibitor and surfactant were very effective in controlling the width uniformity of barrier ribs in the photolithographic method of barrier rib patterning.

  • PDF

Tunnel Magnetoresistance with Top Layer Plasma Oxidation Time in Doubly Oxidized Barrier Process (이중 절연층 공정에서 상부절연층의 산화시간에 따른 터널자기저항 특성연구)

  • Lee, Ki-Yung;Song, Oh-Sung
    • Journal of the Korean Magnetics Society
    • /
    • v.12 no.3
    • /
    • pp.99-102
    • /
    • 2002
  • We fabricated TMR devices which have doubly oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it with oxidation time of 10 sec. Subsequent sputtering of 13 $\AA$-Al was performed and the metallic layer was oxidized for 50, 80, and 120 sec., respectively. The electrical resistance changed from 500 Ω to 2000 Ω with increase of oxidation time, while variation of MR ratio was little spreading 27∼31 % which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3∼1.8 eV sufficient for tunnel barrier, and the barrier width (<15.0 $\AA$) was smaller than physical thickness. Our results may be caused by insufficient oxidation of Al precursor into A1$_2$O$_3$. However, doubly oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. Our results imply that we were able to improve MR ratio and tune resistance by employing doubly oxidized tunnel barrier process.

Solution-Processed Quantum-Dots Light-Emitting Diodes with PVK/PANI:PSS/PEDOT:PSS Hole Transport Layers

  • Park, Young Ran;Shin, Koo;Hong, Young Joon
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2015.08a
    • /
    • pp.146-146
    • /
    • 2015
  • We report the enhanced performance of poly(N-vinylcarbozole) (PVK)/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)-based quantum-dot light-emitting diodes by inserting the polyaniline:poly (p-styrenesulfonic acid) (PANI:PSS) interlayer. The QD-LED with PANI:PSS interlayer exhibited a higher luminance and luminous current efficiency than that without PANI:PSS. Ultraviolet photoelectron spectroscopy results exhibited different electronic energy alignments of QD-LEDs with/without the PANI:PSS interlayer. By inserting the PANI:PSS interlayer, the hole-injection barrier at the QD layer/PVK interface was reduced from 1.45 to 1.23 eV via the energy level down-shift of the PVK layer. The reduced barrier height alleviated the interface carrier charging responsible for the deterioration of the current and luminance efficiency. This suggests that the insertion of PANI:PSS interlayer in QD-LEDs contributed to (i) increase the p-type conductivity and (ii) reduce the hole barrier height of QDs/PVK, which are critical factors leading to improve the efficiency of QD-LEDs.

  • PDF