• Bulletin of the Korean Chemical Society
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• v.18 no.11
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• pp.1175-1179
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• 1997

The adsorption of oxygen on ZnO was monitored by measuring the capacitance of two contacting crystals which have depletion layers originated from the interaction between oxygen and ZnO at 298 K-473 K. An admission of oxygen to the sample induced an irreversible increase in the depth and the amount of adsorbed oxygen was less than 0.001 monolayer in the experimental condition. The relation between pressure of oxygen and variation of the depth was tested from the view point of Langmuir or Freundlich isotherm. Using Hall effect measurement and kinetic experiment, a model equation on the adsorption process was proposed. From the results, it was suggested that oxygen adsorption depended on the rate of electron transfer from ZnO to oxygen while the amount of adsorbed oxygen was kinetically restricted by the height of surface potential barrier.

• Journal of the Korean Ceramic Society
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• v.56 no.1
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• pp.84-90
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• 2019

The varistor properties and stability against dc-accelerated stress of $V_2O_5-Mn_3O_4-Co_3O_4-Dy_2O_3-Nb_2O_5-Bi_2O_3$ (VMCDNB)-doped zinc oxide ceramics sintered at $850-925^{\circ}C$ were investigated. Increasing the sintering temperature increased the average grain size from 4.6 to 8.7 mm and decreased the density of the sintered pellet density from 5.54 to $5.42g/cm^3$. The breakdown field decreased from 5919 to 1465 V/cm because of the increase in the average grain size. Zinc oxide ceramics sintered at $875^{\circ}C$ showed the highest nonlinear coefficient (43.6) and the highest potential barrier height (0.96 eV). Zinc oxide ceramics sintered at $850^{\circ}C$ showed the highest stability: the variation rate of the breakdown field was -2.0% and the variation rate of the nonlinear coefficient was -23.3%, after application of the specified stress (applied voltage/temperature/time).

• Journal of Industrial and Engineering Chemistry
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• v.67
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• pp.486-496
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• 2018

Bimetallic Pd@Ni nanostructure exhibited enhanced co-catalytic activity for the selective hydrogenation of benzaldehyde compare to their monometallic counterparts. Impregnation of these mono/bimetallic nanostructures on mesoporous $TiO_2$ leads to several surface modifications. The bimetallic PNT-3 ($Pd_3@Ni_1/mTiO_2$) exhibited large surface area ($212m^2g^{-1}$), and low recombination rate of the charge carriers ($e^--h^+$). The hydrogenation reaction was analyzed under controlled experiments. It was observed that under UV-light irradiations and saturated hydrogen atmosphere the bimetallic PNT-3 photocatalyst display higher rate constant $k=5.31{\times}10^{-1}h^{-1}$ owing to reduction in the barrier height which leads to efficiently transfer of electron at bimetallic/$mTiO_2$ interface.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.814-819
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• 1986

In this work the electrical conduction and breakdown properties of thermal oxides grown on phosphorus-doped polysilicon have been investigated by using ramped I-V measurements. The oxide films, grown from phosphorus-doped polysilicon deposited at 560\ulcorner, have higher breakdown field(6.8MV/cm) and lower leakage current than those deposited at 625\ulcorner. Also the effective energy barrier height(\ulcorner)calculated from the Fowler-Nordheim curve of polyoxide was 0.76eV for 560\ulcorner deposited film and 0.64eV for 625\ulcorner deposited film.

• Korean Journal of Agricultural and Forest Meteorology
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• v.21 no.4
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• pp.277-285
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• 2019

This study was conducted to understand the growth characteristics of Picea jezoensis that was one of representative subalpine species in Korea, in the light of the effects of wind and micro-topography in its habitats on Mt. Deogyu, Korea. The prevailing wind directions were southwest and west at the study sites. We randomly selected P. jezoensis (height ≥ 1.5 m) on windward, intermediate, and leeward slopes and measured diameter at breast height (DBH), height, crown length by 8 directions in upper, middle and lower sectors of the crown. We examined the micro-topography of P. jezoensis stood on and classified it into 3 types: type 1 was mounded and fully exposed to surrounding environments without neighboring trees; type 2 was somewhat wind-protected by surrounding rocks, but no neighboring vegetation; type 3 was on gentle slope or flat where P. jezoensis grew with neighboring trees or shrubs. The ratios of height to DBH, and estimated crown growth to actual crown growth (hereafter crown growth ratio) were compared among the three types of micro-topography on windward, intermediate and leeward sites. The height growth per DBH and crown growth ratio in the upper and middle crowns were the smallest on the windward site, and the highest on the leeward site (p < 0.01). The crown growth ratio on type 1 on the windward site was only 46% of that on type 3 on the leeward site. Although on the same windward slope, trees on type 1 had more deformed crown shapes than that on Type 3, showing asymmetric crown cross-sectional areas. Wind and micro-topography played critical roles on the crown growth of P. jezoensis.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.799-804
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• 2016

To analyze the phenomenon of drain induced barrier lowering(DIBL) for top and bottom gate oxide thickness of asymmetric double gate MOSFET, the deviation of threshold voltage is investigated for drain voltage to have an effect on barrier height. The asymmetric double gate MOSFET has the characteristic to be able to fabricate differently top and bottom gate oxide thickness. DIBL is, therefore, analyzed for the change of top and bottom gate oxide thickness in this study, using the analytical potential distribution derived from Poisson equation. As a results, DIBL is greatly influenced by top and bottom gate oxide thickness. DIBL is linearly decreased in case top and bottom gate oxide thickness become smaller. The relation of channel length and DIBL is nonlinear. Top gate oxide thickness more influenced on DIBL than bottom gate oxide thickness in the case of high doping concentration in channel.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.27 no.1
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• pp.85-92
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• 2005

Reconstruction of defect in the anterior part of the maxilla to enable implant placement or prothesis is a complicated treatment due to the anatomical position and lack of soft tissues. Two cases are presented in which autogenous iliac PMCB(particulate marrow and cancellous bone) with titanium mesh were used for premaxilla reconstruction and alveolar bone repair of the anterior maxillas prior to denture and implants fixation respectively. Cancellous bone from the anterior iliac crest was compressed and placed against a titanium mesh fixed to the bone of palate in a patient with severe defect of the anterior maxilla. There were no problem in the healing, and the anterior maxillas of two patients had increased height and width during the initial healing and remodeling. The clinical reports describe the use of titanium mesh for reconstruction of premaxilla. Autogenous bone grafts were harvested from the iliac crest and were loaded on a titanium mesh that were left in the patient's maxilla for 6 months before they were removed respectively. The radiographic analysis demonstrated that a 10mm vertical ridge augmentation had been achieved. In guided bone regeneration, the quantity of bone regenerated under the barrier has been demonstrated to be directly related to the amount of the space under the membrane. This space can diminish as a result of membrane collapse. To avoid this problem which involved the use of a titanium mesh barrier to protect the regenerating tissues and to achieve a rigid fixation of the bone segments, were used in association with autologous bone in 2 cases. The aim of this study was to evaluate the capability of a configured titanium mesh to serve as a mechanical and biologic device for restoring a vertically defected premaxilla.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.186-193
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• 2000

Effects of 1.0 mol% CoO addition on sintering and the electrical properties of ZnO-Bi2O3-Sb2O3(ZBS) varistor system with 3.0 mol% co-addition of Sb2O3 and Bi2O3 at various Sb/Bi ratio (0.5, 1.0, and 2.0) were investigated. Cobalt had little influence on the liquid-phase formation and the pyrochlore decomposition temepratures of ZBS, while densification was mainly dependent on Sb/Bi ratio: when Sb/Bi=0.5, excess Bi2O3 irrelevant to the formation of pyrochore(Zn2Sb3Bi3O14) forms eutectic liquid at ~75$0^{\circ}C$ which promotes densification and grain growth; with Sb/Bi=2.0, the second phase Zn7Sb2O12 formed by excess Sb2O3 irrelevant to the formation of the pyrochlore retards densification up to ~100$0^{\circ}C$. These phases caused the coarsening and uneven distribution of the second phase particles on the grain boundaries of ZnO above the pyrochlore decomposition temperature(~105$0^{\circ}C$), which led to broad size dist-ribution of ZnO; the specimen with Sb/Bi=1.0 showed homogeneous microstructure compared with the others, which enabled improved varistor characteristics. Doping of Co increased the nonlinearity and the potential barrier height of ZBS, which is thought to stem from improved sintering behavior such as homogenized microstructure due to size reduction and even distribution of the second phase and suppressed volatility of Bi2O3, as well as the improvement in the potential barrier structure via increased donor and interface electron trap densities.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.7
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• pp.1463-1469
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• 2012

This paper has presented the influence of scaling theory on short channel effects of double gate(DG) MOSFET in subthreshold region. In the case of conventional MOSFET, to preserve constantly output characteristics,current and switching frequency have been analyzed based on scaling theory. To analyze the results of application of scaling theory for short channel effects of DGMOSFET, the changes of threshold voltage, drain induced barrier height and subthreshold swing have been observed according to scaling factor. The analytical potential distribution of Poisson equation already verified has been used. As a result, it has been observed that threshold voltage among short channel effects is grealty changed according to scaling factor. The best scaling theory for DGMOSFET has been explained as using modified scaling theory, applying weighting factor reflected the influence of two gates when scaling theory has been applied for channel length.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.123-129
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• 2003

Thin transparent Cu films in the thickness range of 10 ~ 40 nm are deposited by rf-magnetron sputtering on porous silicon (PS) anodized on p-type silicon in dark. Microstructural features of the Cu films are investigated using SEM, AFM and XRD techniques. The RMS roughness of the Cu films is found to be around 1.47 nm and the grain growth is columnar with a (111) preferred orientation and follows the Volmer-Weber mode. The photoluminescence studies showed that a broad luminiscence peak of PS near the blue-green region gets blue shifted (~0.05 eV) with a small reduction in intensity and therefore, Cu-related PL quenching is absent. The FTIR absorption spectra on the PS/Cu structure revealed no major change of the native PS peaks but only a reduction in the relative intensity. The I-V characteristic curves further establish the Schottky nature of the diode with an ideality factor of 2.77 and a barrier height of 0.678 eV. An electroluminiscence (EL) signal of small intensity could be detected for the above diode.