• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.87-91
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• 2004

We have investigated the effects of W-N/Pt bottom electrode on the ferroelectric degradation of $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)/Pt$ due to hydrogen annealing at $350^{\circ}C$ in $N_2$ gas atmosphere containing $5{\%}\;H_2$ gas for 1hr. As a result, inserting the W-N thin films between SBT and Pt, this W-N thin film prevents hydrogen molecules to be chemisorbed at the Pt electrode surface of at the electrode/ferroelectric interface during hydrogen annealing. These hydrogen atoms can diffuse into the SBT and react with the oxide causing the oxygen deficiency in the SBT film, which will result in the ferroelectric degradation. Experimental results show that W-N thin film is a good diffusion barrier during the hydrogen annealing.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.221-226
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• 2000

After manufacturing the electrochromic device (structure: ITO glass/$WO_3$/electrolyte/$V_2O_5$/ITO;glass) by using of sol-gel process and evaporation, optical properties and migration effect were investigated. The result shows that electrochromic device with heat treated (at water vapor ambient, $500^{\circ}C$, 1 hour) sol-gel coated $WO_3$ and $V_2O_5$ films had the highest transmittance variance. Electrochromic devices are based on the reversible insertion of guest atoms into structure of the host solid. But after cyclic operation, we find that the tungsten in $WO_3$ film and the indium in ITO film were migrated with each other. For the purpose of blocking migration, tungsten barrier film is inserted between ITO and $WO_3$ film. The result of cyclic voltamogram and the Auger depth profile show that the peak separation of cyclic voltamogram is reduced to below 1/10 and we could effectively block the indium and tungsten migration that is caused by flow of Li ions.

• Applied Chemistry for Engineering
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• v.30 no.1
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• pp.68-73
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• 2019

We prepared hydrophobic silica particles by a sol-gel process from tetraethyl orthosilicate (TEOS), followed by coupling the reaction with octyltrimethoxysilane (OTMS) or hexadecyltrimethoxysilane (HDTMS) under various reaction conditions. We confirmed the extent of silica surface modification with organic compounds by SEM-EDS, thermogravimetry and elemental analysis. The silica particles obtained after the hydrolysis reaction of TEOS in ethanol at $50^{\circ}C$ for 24 h and the coupling reaction with OTMS for 2 h at the same temperature displayed the optimum performance in terms of the dispersity in an organic solvent and the surface roughness of films composited with epoxy resins. The oxygen permeability of the composite film with modified-silica was 12% lower than that of using the film without modified-silica.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.77-77
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• 2011

These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.39-44
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• 2011

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under oxygen ambient gases (Ar, $Ar+O_2$) at room temperature. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $O_2$ under $Ar+O_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/a-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Applied Chemistry for Engineering
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• v.24 no.6
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• pp.621-627
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• 2013

In order to apply eco-friendly poly(propylene carbonate) (PPC) into barrier packaging materials, six different PPC/exfoliated graphite (EFG) nanocomposite films with different EFG were successfully prepared by a solution blending method. Their water sorption behavior was gravimetrically investigated as a function of the EFG content and interpreted with respect to their chemical structure and morphology. The water sorption isotherms were reasonably well fitted by Fickian diffusion model, regardless of morphological heterogeneities. With increasing the EFG content, the diffusion coefficient and water uptake decreased from $12.5{\times}10^{-10}cm^2sec^{-1}$ to $7.2{\times}10^{-10}cm^2sec^{-1}$ and from 8.9 wt% to 4.2 wt%, respectively, which indicates that the moisture resistance capacity of PPC was greatly enhanced by incorporating EFG into PPC. The enhanced water barrier property of the PPC/EFG nanocomposite films with the high aspect ratio EFG makes them potential candidates for versatile packaging applications. However, to maximize the performance of the nanocomposite films, further researches are required to increase the compatibility of EFG in the PPC matrix.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1129-1136
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• 1999

TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.

• KIEE International Transactions on Electrophysics and Applications
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• v.12C no.4
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• pp.208-213
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• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

• Polymer(Korea)
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• v.37 no.3
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• pp.373-378
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• 2013

The interfacial adhesion strength is very important in $SiO_x$ deposited PC film for the barrier enhanced polycarbonate (PC) flexible substrate. In this study, PC films were treated by undercoating, UV/$O_3$ and low temperature plasma and then the effect of physical and chemical surface modifications on the interfacial adhesion strength between PC film and $SiO_x$ barrier layer were studied. It was found that untreated PC film shows significantly low interfacial adhesion strength due to the smooth surface and low surface free energy of PC. Low temperature plasma treatments resulted in the increase of both surface roughness and surface free energy due to etching and the appearance of polar molecules on the PC surface. However, UV/$O_3$ treatment only shows the increase of surface free energy by developed polar molecules on the surface. These surface modifications caused the enhancement of surface interfacial strength between PC film and $SiO_x$ barrier. In the case of undercoating, it was found that the increase of surface interfacial strength was achieved by adhesion between various acrylic acid on acrylate coated surface and $SiO_x$ without increase of polar surface energy. In addition, the barrier property is also improved by organic-inorganic hybrid multilayer structure.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.1 no.1
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• pp.38-50
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• 1995

Tensile strength (TS) of ${\kappa}-carrageenan$ films without salt was 22-32 MPa and was the highest among ${\kappa},\;{\lambda}\;and\;{\iota}-carrageenan$ films. ${\kappa}-carrageenan$ films had high mechanical barrier properties as they are compared with TS of polyethylene films which are 13-28 MPa. TS of ${\iota}-carrageenan$ films without salt was 5-9 MPa and was the lowest among the films. Mechanical properties (TS and elongation) were affected by the concentration of plasticizers. Especially, elongation of ${\kappa}-carrageenan\;and\;{\iota}-carrageenan$ drastically increased as the concentration of plasticizer increased. Mechanical properties (TS and elongation) were greatly affected by various concentration and kind of salts. TS of Film-A (0.375 g plasticizer/g carrageenan) of ${\kappa}-carrageenan$ films which contains 0.1% (w/w) potassium chloride increased to 45 MPa which was the highest among the TS of biopolymer films which have been developed.