• Advances in nano research
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• v.10 no.5
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• pp.415-422
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• 2021

Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi₃NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi₃NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi₃NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.

• Journal of information and communication convergence engineering
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• v.7 no.2
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• pp.215-218
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• 2009

In this paper, temperature stable current and voltage references using simple CMOS bias circuit are proposed. To obtain temperature stable characteristics of bias circuit a bandgap reference concept is used in a conventional circuit. The parasitic bipolar transistors or MOS transistors having different threshold voltage are required in a bandgap reference. Thereby the chip area increase or the extra CMOS process is required compared to a standard CMOS process. The proposed reference circuit can be integrated on a single chip by a standard CMOS process without the extra CMOS process. From the simulation results, the reference current variation is less than ${\pm}$0.44% over a temperature range from - $20^{\circ}C$ to $80^{\circ}C$. And the voltage variation is from - 0.02% to 0.1%.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.1
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• pp.65-68
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• 2004

The performances of millimeter wave Power amplifier have been improved by using PBG (photonic bandgap structure) in this paper. The PBG structure has been optimized to obtain the lowpass characteristics in Ka band and employed at output port of Ka band power amplifier. The harmonics of the power amplifier have been suppressed by the PBG of output port and the proposed PBG has suppressed the second harmonic to 40dBc around 50 GHz. The improvements of IMD and PAE of the amplifier employing the PBG structure are obtained $15\%$ and $25\%$, compared with those of the conventional Ka band power amplifier, respectively.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.2-3
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• 2001

Characteristics of two-dimensional slab photonic crystal lasers will be summarized. Room temperature c.w operation is demonstrated at 1.6 $\mu\textrm{m}$ by using InGaAsP slab-waveguide triangular photonic crystal on top of wet-oxidized aluminum oxide. Recently, 2-D PBG structures have attracted a great deal of attention due to their simplicity in fabrication and theoretical study as compared to the three-dimensional counterparts [1]. Air-guided 2-D slab PBG lasers were reported by Caltech group (2). However, this air-slab structure is mechanically fragile and thermally unforgiving. Therefore, a new structure that can remove this thermal limitation is dearly sought after for 2-D PBG laser to have practical meaning. In this talk, we report room-temperature continuous operation of 2-D photonic bandgap lasers that are thermally and mechanically stable.(omitted)

• ETRI Journal
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• v.38 no.5
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• pp.903-910
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• 2016

We propose a novel multi-stack (MS) technique for a compact and wideband electromagnetic bandgap (EBG) structure in high-speed multilayer printed circuit boards. The proposed MS technique efficiently converts planar EBG arrays into a vertical structure, thus substantially miniaturizing the EBG area and reducing the distance between the noise source and the victim. A dispersion method is presented to examine the effects of the MS technique on the stopband characteristics. Enhanced features of the proposed MS-EBG structure were experimentally verified using test vehicles. It was experimentally demonstrated that the proposed MS-EBG structure efficiently suppresses the power/ground noise over a wideband frequency range with a shorter port-to-port spacing than the unit-cell length, thus overcoming a limitation of previous EBG structures.

• ETRI Journal
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• v.29 no.5
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• pp.614-618
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• 2007

A miniaturized bandstop filter (BSF) is introduced in this paper. The filter consists of one meander spurline and a pair of capacitively loaded stubs. The meander spurline with low resonant frequency and improved slow-wave factor exhibits excellent resonant bandgap characteristics which can be modeled by a longitudinally coupled resonator. The design of the proposed microstrip BSF is presented, and its performance is measured. Measurements show that there is a stopband from 2.3 to 5.6 GHz with $S_{21}$ less than -20 dB. The total length of this BSF equals 23 mm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.186-187
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• 2007

In this work, a temperature stable PWM(Pulse width modulation) circuit is proposed. The designed PWM circuit has a temperature dependent current source and a temperature independent voltage to compensate electrical characteristics with operating temperature. The variation of driving current is from about 4% to -6% in the temperature range $0^{\circ}C\;to\;70^{\circ}C$ compared to the current at the room temperature. The variation of bandgap voltage reference is from about 1.3% to -0.2% with temperature when the supply voltage is 3.3 volts. From simulation results, the variation of output pulse width is less than from 0.86% to -0.38% in the temperature range $0^{\circ}C\;to\;70^{\circ}C$.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.164-165
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• 2003

A cholesteric liquid crystal (CLC) system exhibits one-dimensional (1-D) Photonic bandgap (PBG) characteristics in the transmission spectrum through a selective Bragg reflection. Related to the nonlinear optical (NLO) processes in a PBG structure of CLC, the inherent periodicity has been exploited to Phase-match the fundamental and the harmonic waves through the umklapp Processes. Near bandgap edges of a CLC, harmonic generations have been shown to be enhanced significantly through the field localization. (omitted)

• Proceedings of the IEEK Conference
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• 2003.07a
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• pp.358-361
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• 2003

In this paper, a new technique to reduce the phase noise in microwave oscillators is proposed using the resonant characteristics of the Photonic Bandgap(PBG). Microstrip line resonator has the low Q(Qaulity factor). Therefore, as PBG structure was applied, we examined that the phase noise of the oscillator has been reduced.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.1
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• pp.107-111
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• 2009

In this paper, the power added efficiency(PAE) of a Doherty amplifier has been improved by applying Photonic Bandgap(PBG) characteristics on the output of amplifier. As a result of the high order harmonics termination, excellent improvement in PAE, maximum output power as well as linearity is obtained. The PAE is improved as much as relatively 35% compared with a conventional Doherty amplifier. Moreover, size of LPF is reduced by PBG characteristics. Therefore the whole amplifier circuit size is considerably reduced by diminishing in size of the LPF as compared with a Doherty amplifier using conventional LPFs.