• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.3
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• pp.29-34
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• 2019

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its large energy band gap and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, electric conductivity of porous n-type SiC semiconductors fabricated from ${\beta}-SiC$ powder at $2000^{\circ}C$ in $N_2$ atmosphere was comparable to or even larger than the reported values of SiC single crystals in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$, while thermal conductivity was kept as low as 1/10 to 1/30 of that for a dense SiC ceramics. In this work, for the purpose of decreasing sintering temperature, it was attempted to fabricate porous reaction-sintered bodies at low temperatures ($1400-1600^{\circ}C$) by thermal decomposition of polycarbosilane (PCS) impregnated in n-type ${\beta}-SiC$ powder. The repetition of the impregnation and sintering process ($N_2$ atmosphere, $1600^{\circ}C$, 3h) resulted in only a slight increase in the relative density but in a great improvement in the Seebeck coefficient and electrical conductivity. However the power factor which reflects the thermoelectric conversion efficiency of the present work is 1 to 2 orders of magnitude lower than that of the porous SiC semiconductors fabricated by conventional sintering at high temperature, it can be stated that thermoelectric properties of SiC semiconductors fabricated by the present reaction-sintering process could be further improved by precise control of microstructure and carrier density.

• Journal of IKEEE
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• v.23 no.1
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• pp.14-21
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• 2019

In this paper, we implemented an on-board miniaturization antenna operating 2.4 GHz using MZR(Mu Zero Resonator). It is must be operating under the constraint that the size of the small terminal PCB should be $78{\times}38{\times}0.8mm^3$ and the size of the system should be $63{\times}38{\times}0.8mm^3$ and the size of the radiating part should be $15{\times}38{\times}0.8mm^3$. The feeding structure uses a CPW structure for stable feeding and a feeding point at the upper left of the system board. A magnetic field coupling structure is used for coupling the feeding part and the antenna. The resonance frequency of the MZR is determined by the series inductance and capacitance of the cell, so the gap between the cells, the length of the cell, the length of the interdigital capacitor, and the spacing between the radiation part and the ground plane are analyzed. The antenna was designed and fabricated using the results. The total size of the antenna including the feed structure is $20.8{\times}9.0{\times}0.8mm^3$, and the electrical length is $0.1664{\lambda}_0{\times}0.072{\lambda}_0{\times}0.0064{\lambda}_0$. The measurement result for 10 dB bandwidth, gain and directivity are 440 MHz(18.3%), 0.4405 dB, and 2.722 dB respectively. It is confirmed that the radiation pattern has omnidirectional characteristics and it can be applied to ultra small terminal antenna.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.83-90
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• 2023

The β-Ga₂O₃ has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga₂O₃ has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga₂O₃ single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga₂O₃ single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga₂O₃ were prepared by adding different mole ratios of SnO₂ powder to Ga₂O₃ powder, and β-Ga₂O₃ single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga₂O₃ single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga₂O₃ single crystal according to the Sn doping were extensively investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.4
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• pp.109-116
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• 2024

β-Ga₂O₃ is a representative ultra-wide bandgap (UWBG) semiconductor that has attracted much attention for power device applications due to its wide-bandgap of 4.9 eV and high-breakdown voltage of 8 MV/cm. In addition, because solution growth is possible, it has advantages such as fast growth rate and lower production cost compared to SiC and GaN [1-2]. In this study, we have successfully grown Si-doped 10 mm thick Si-doped β-Ga₂O₃ single crystals by the EFG (Edge-defined Film-fed Growth) method. The growth direction and growth principal plane were set to [010] / (010), respectively, and the growth speed was 7~20 mm/h. The as-grown β-Ga₂O₃ single crystal was cut into various crystal planes (001, 100, ${\bar{2}}01$) and off-angles (1^o, 3^o, 4^o), and then surface processed. After processed, the homoepitaxial layer was grown on the epi-ready substrate using the HVPE (Halide vapor phase epitaxy) method. The processed samples and the epi-layer grown samples were analyzed by XRD, AFM, OM, and Etching to compare the surface properties according to the crystal plane and off-angle.

• Applied Chemistry for Engineering
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• v.22 no.1
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• pp.15-20
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• 2011

Poly[2,3-dimethyl-5,8-dithiophene-2-yl-quinoxaline-alt-9,9-dihexyl-9H-fluorene] (PFTQT) and poly[2,3-dimethyl-5,8-dithiophen-2-yl-quinoxaline-alt-10-hexyl-10H-phenothiazine (PPTTQT) based on 2,3-dimethyl-5,8-dithiophen-2-yl-quinoxaline weresynthesized by Suzuki coupling reaction. All polymers were soluble in common organic solvents such as chloroform, chlorobenzene, o-dichlorobenzene, tetrahydrofuran (THF) and toluene. The maximum absorption wavelength and band gap of PFTQT were 440 nm and 2.30 eV, and PPTTQT were 445 nm and 2.23 eV, respectively. The HOMO and LUMO energy level of PFTQT were -6.05 and -3.75 eV, and PPTTQT were -5,89 and -3.66 eV, respectively. The organic photovoltaic devices based on the blend of polymer and PCBM (1 : 2 by weight ratio) were fabricated. Efficiencies of devices were 0.24% (PFTQT) and 0.16% (PPTTQT), respectively. The short circuit current density ($J_{sc}$), fill factor (FF), and open circuit voltage ($V_{oc}$) of the device with PFTQT were $0.97mA/cm^2$, 29% and 0.86 V, and the device based on PPTTQT were $0.80mA/cm^2$, 28% and 0.71 V, 31% and 0.71 V, respectively, under air mass (AM) 1.5 G and 1 sun condition ($100mA/cm^2$).