• Korean Journal of Metals and Materials
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• v.50 no.7
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• pp.545-548
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• 2012

The optical and electronic properties of Indium Tin Oxide (ITO) thin films deposited on a RF-plasma treated glass substrate were investigated by X-Ray Photoelectron Spectroscopy (XPS), Ultra-violet Photoelectron Spectroscopy (UPS), Reflected Electron Energy Loss Spectroscopy (REELS). The modification of glass substrates was carried out by varying the time of the plasma surface treatment in an oxygen atmosphere. The focus of this research was to examine how the optical and electronic properties of ITO thin films change with the plasma treatment time. The surface energy increased since the carbon bonds were removed from the surface after the glass substrate received the surface treatment. The ITO thin films produced on the glass substrate with surface treatment showed that the high optical transmittance was approximately 85%. The measured band gap energy was as high as 3.23 eV when the plasma treatment time was 60 s and the work function after the treatment was increased by 0.5 eV in comparison to that before the treatment of 60 s. The ITO thin film exhibited an excellent sheet resistance of $2.79{\Omega}/{\Box}$. We found that the optical and electronic properties of ITO thin films can be improved by RF-plasma surface treatment.

• Journal of Hydrogen and New Energy
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• v.29 no.6
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• pp.627-634
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• 2018

Gallium-based liquid metal, e.g., eutectic gallium-indium (EGaIn), is highly attractive as an electrode material for flexible and stretchable devices. On the liquid metal, oxide layer is spontaneously formed, which has a wide band-gap, and therefore is electrically insulating. In this paper, we fabricate a capacitor based on eutectic gallium-indium (EGaIn) liquid metal and investigate its cyclic voltammetry (CV) behavior. The EGaIn capacitor is composed of two EGaIn electrodes and electrolyte. CV curves reveal that the EGaIn capacitor shows the behavior of electric double-layer capacitors (EDLC), where the oxide layers on the EGaIn electrodes serves as the dielectric layer of EDLC. The oxide thicker than the spontaneously-formed native oxide decreases the capacitance of the EGaIn capacitor, due to increased voltage loss across the oxide layer. The EGaIn capacitor without oxide layer exhibits unstable CV curves during the repeated cycles, where self-repair characteristic of the oxide was observed. Finally, the electrolyte concentration is optimized by comparing the CV curves at various electrolyte concentrations.

• Korean Journal of Materials Research
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• v.30 no.12
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• pp.701-708
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• 2020

Irradiation of the metal nanoparticles causes local plasmon resonance in a specific wavelength band, which can improve the absorption and scattering properties of a structure. Since noble metal nanoparticles have better resonance effects than those of other metals, it is easy to identify plasmonic reactions and this is advantageous to find the optical tendency. Compared to having a particle gap or randomly arranged particle structures, densely and evenly packed structures can exhibit more uniform optical properties. Using the uniform properties, the structure can be applied to optical filtering applications. Therefore, in this paper, validation tests about metal nanoparticles and thin film structures are conducted for more accurate analysis. The optical properties of monolayer and bilayer noble metal nanoparticle structures with different diameters, packed in a uniform array, are investigated and their optical trends are analyzed. In addition, a thin film structure under identical conditions as metal nanoparticle structure is evaluated to confirm the improved optical characteristics.

• Prospectives of Industrial Chemistry
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• v.20 no.2
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• pp.13-24
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• 2017

태양전지는 온실 가스 감축에 효과가 큰 기후 변화 대응 기술이다. 현재 상업화에 성공한 실리콘 태양전지의 뒤를 이어 박막 태양전지, 페로브스카이트 태양전지 등 차세대 태양전지가 가격과 효율 등을 극복하기 위하여 매우 많이 연구되고 있다. CZT(S,Se) 박막 태양전지는 차세대 태양전지의 유력 후보군인 CIGS, CdTe, 페로브스카이트 태양전지 등에 비해 범용 무독성 원소를 광흡수층으로 사용한다는 장점을 가지고 있지만 아직까지는 이들보다 효율이 낮아 상용화하기에는 많은 문제를 가지고 있다. CZT(S,Se) 박막태양전지의 기본적인 물성, 공정 등을 알아보고 고효율을 달성하는 방법에 대하여 알아보고자 한다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.15-20
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• 2007

We fabricated ZnO thin films on quartz substrate using pulsed laser deposition method and investigated structural and optical properties of ZnO thin films with various substrate temperatures. Regardless of the substrate temperature variation, all ZnO thin films had grown to (002) and the thin film deposited at 400 $^{\circ}C$ exhibited an excellent crystallinity having 0.24$^{\circ}$ of Full-Width-Half-Maximum (FWHM). In the result of photoluminescence property, UV and deep-level emission peaks were observed in all ZnO films and the emission peaks were changed with various substrate temperatures. An highest UV emission was exhibited on the specimen deposited at 400 $^{\circ}C$ and the FWHM of UV peak was 14 nm. The optical transmittance was about 85 % in visible region regardless of the substrate temperature. The comparison result of the bandgap energies obtained from optical transmittance and UV emission centers, the two values were about the same. From these results, it is found that UV emission center has close relationship with near band edge emission of ZnO thin film.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.655-660
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• 2001

Surface photovoltage spectroscopy was used to study $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P/GaAs$ grown by metalorganic chemical vapor deposition(MOCVD). Energy gap related transition in GaAs and $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$ were observed. By measuring the frequency dependence of $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P/GaAs$, we observed that SPV line shape does not chance, whereas the amplitude change. This results is due to the difference in the lifetimes of the photocarriers in GaAs and in $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$. We also have evaluated the parameters that describe the temperature dependences of the band gap.

• Bulletin of the Korean Chemical Society
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• v.30 no.1
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• pp.205-213
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• 2009

This study reports on the geometry optimizations and electronic structure calculations for methyl pyropheophorbide (MPPa), tropolonyl methyl pyropheophorbides (TMPPa, ITMPPa), and cationic tropolonyl methyl pyropheophorbides ($TMPPa^+{{\cdot}BF_4}^-,\;ITMPPa^+{{\cdot}BF_4}^-,\;TMPPa^+,\;and\;ITMPPa^+$) using Local Spin Density Approximation (LSDA/ 6-31G*) and the Restricted Hatree-Fock (RHF/6-31G*) level theory. From the calculated results, we found that substituted cationic tropolonyl groups have larger structural effects than those of substituted neutral tropolonyl groups. The order of structural change effects is $ITMPPa^+ > ITMPPa^+{{\cdot}BF_4}^-$ > ITMPPa, as a result of the isopropyl group. Because it is an electron-releasing group, the substituted isopropyl group electronic effect on a 3-position tropolone increases the Highest Occupied Molecular Orbital and Lowest Unoccupied Molecular Orbital (HOMO-LUMO) energy gap. It was constituted that the larger the cationic characters of these photosensitizers, the smaller the HOMOLUMO band gaps are. The orbital energies of the cationic systems and the ions are stronger than those of a neutral system because of a strong electrostatic interaction. However, this stabilization of orbital energies are counteracted by the distortion of chlorin macrocycle, which results in a large destabilization of chlorin-based compound HOMOs and smaller destabilization of LUMOs as shown in TMPPa (ITMPPa), $TMPPa^+{{\cdot}BF_4}^- (ITMPPa^+{{\cdot}BF_4}^-),\;and\;TMPPa^+\;(ITMPPa^+)$ of Figure 6 and Table 6-7. These results are in reasonable agreement with normal-coordinate structural decomposition (NSD) results. The HOMO-LUMO gap is an important factor to consider in the development of photodynamic therapy (PDT).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.106-106
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• 2011

Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

• Nuclear Engineering and Technology
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• v.52 no.11
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• pp.2585-2593
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• 2020

Swift heavy ion (SHI) beam irradiation can generate desirable defects in materials by transferring sufficient energy to the lattice that favours huge possibilities in tailoring of materials. The effect of Ag¹⁵⁺ ion irradiation with energy 200 MeV on spray deposited V₂O₅ thin films of thickness 253 nm is studied at various ion doses from 5 × 10¹¹ to 1 × 10¹³ ions/㎠. The XRD results of pristine film confirmed orthorhombic structure of V₂O₅ and its average crystallite size was found to be 20 nm. The peak at 394 cm^-1 in Raman spectra confirmed O-V-O bonding of V₂O₅, whereas 917 cm^-1 arise because of distortion in stoichiometry by a loss of oxygen atoms. Raman peaks vanished completely above the ion fluence of 5 × 10¹² ions/㎠. Optical studies by UV-Vis spectroscopy shows decrement in transmittance with an increase in ion fluence up to 5 × 10¹² ions/㎠. The red shift is observed both in the direct and indirect band gaps until 5 × 10¹² ions/㎠. The surface topography of the pristine film revealed sheath like structure with randomly distributed spherical nano-particles. The roughness of film decreased and the density of spherical nanoparticles increased upon irradiation. Irradiation improved the conductivity significantly for fluence 5 × 10¹¹ ions/㎠ due to band gap reduction and grain growth.

• Korean Journal of Materials Research
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• v.2 no.5
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• pp.360-365
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• 1992

Ga-doped polycrystalline ZnO films on glass substrates were prepared by sputtering the targets, which had been prepared by sintering discs consisting of ZnO powder and various amounts of G$a_2O_3$, to investigate the effects of gallium doping and sputtering conditions on electrical properties. Optimizing the RF power density, argon gas pressure and gallium content, transparent Ga-doped ZnO films with resistivity less than 1$0^{-3}$ohm-cm are obtained. Electron concentration of undoped and Ga-doped ZnO films are order of $10^{18}$, $10^{21}$/c$m^2$respectively. After heat treatment in air and $N_2atmosphere, $ the resistivity of Ga-doped ZnO films increases by about two orders of magnitude. The optical transmission is above 80% in the visible range and the optical band widens as the Ga content increases.