• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.20-21
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• 2003

Erbium doped fiber (EDF) sources are useful devices for characterization of optical components for wavelength division multiplexing (WDM) fiber optic communication system. Therefore, there are many efforts to extend the bandwidth and to increase the power of the light source. Especially, L-band ASE source uses the low inversion state of EDF. It makes the power efficiency very low and needs a lot of fiber as several times as the fiber needed in C-band ASE generation. (omitted)

• Journal of Pharmacopuncture
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• v.6 no.3
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• pp.91-106
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• 2003

Objectives : The aim of this study was to examine the effects of electroacupuncture(EA) at the PC6(Naegwan) and the TE5 (Oegwan) on nounal humans using power spectral analysis. Methods : EEG power spectrum exhibit site-specific and state-related differences in specific frequency bands. In this study, power spectrum was used as a measure of complexity. 30 channel EEG study was carried out in 30 subjects(30 males ; age=23.7 years). Results : In ${\alpha}$(alpha) band, the power values at F7 channels(p<0.05) during the PC6-acupoint treatment were significantly were decreased. In ${\beta}$(beta) band, the power values at Fp1, Fz, TT1, T5, P3, P4, Po1, P02, O1, Oz, O2 channels(p<0.05) during the non-acupoint treatment and at Fp1, F4, F8 channels(p<0.05) during the TE5-acupoint treatment significantly were increased. In ${\theta}$(theta) band, the power values at Fp1 channels(p<0.05) during the non-acupoint treatment and at Oz channels(p<0.05) the TE5-acupoint treatment significantly were increased. but, the power values at F7 channels(p<0.05) during the non-acupoint treatment were significantly were decreased. In ${\delta}$(delta) band, the power values at TCP1, TCP2, CP1, T5 channels(p<0.05) during PC6-acupoint treatment were increased and the power values at F7, TT2 channels(p<0.05) during non-acupoint treatment were increased. but, the power values at the TE5-acupoint treatment significantly was decreased than the before-acupuncture treatment.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.3
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• pp.264-272
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• 2009

In this paper, a Ka-band 10 W power amplifier module is designed and fabricated using MIC(Microwave Integrated Circuit) module technology which combines multiple power MMIC(Monolithic Microwave Integrated Circuit) chips on a thin film substrate. Modified Wilkinson power dividers/combiners are used for millimeter wave modules and CBFGC-PW-Microstrip transitions are utilized for reducing connection loss and suppressing resonance in the high-gain and high-power modules. The power amplifier module consists of seven MMIC chips and operates in a pulsed mode. for the pulsed mode operation, a gate pulse control circuit supplying the control voltage pulses to MMIC chips is designed and applied. The fabricated power amplifier module shows a power gain of about 58 dB and a saturated output power of 39.6 dBm at a center frequency of the interested frequency band.

• Journal of electromagnetic engineering and science
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• v.14 no.1
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• pp.15-24
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• 2014

A compact dual-band three-way metamaterial power divider is proposed that has three in-phase outputs. Fully printed composite rightand left-handed (CRLH) unequal and equal power dividers are first implemented for 900-MHz and 2.4-GHz bands with the power-division ratios of 2:1 and 1:1, respectively. An initial 1:1:1 power divider is then achieved by incorporating the input of the two-way equal block into an output of the unequal block, and trimming the interconnection parameters. The condition of an identical phase at the three outputs of the power divider is then met by devising a hybrid CRLH phase-shift line to compensate for the different phase errors at the two frequencies. This scheme is confirmed by predicting the performance of the power divider with circuit analysis and full-wave simulation and measuring the fabricated prototype. They results show agreement; the in-phase outputs as well as the desirable power-division are accomplished and outdo the conventional techniques.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.11
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• pp.49-54
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• 2001

In this work, we developed a Ka-band hybrid 4-stage power amplifier module using GaAs pHEMTs and waveguide to microstrip transitions. It has high gain and high output power characteristics. We used a 10 mil- thickness duroid substrate to fabricate this power amplifier and waveguide to microstrip transitions. The fabricated waveguide to microstrip transition showed about 1 dB insertion loss(back to back) at 32 40 GHz. The measured results of power amplifier module showed over 1W output power at 36.1 - 37.1 GHz. And it showed 31 dBm output power, 24 dB power gain and 15 % power-added efficiency(PAE) at 36.5 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.9
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• pp.685-697
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• 2017

In this paper, it is presented the result of design and fabrication for C-band solid state high power amplifier unit and components using in search radar. The solid state power amplifier(SSPA) assembly was fabricated using GaN(Gallium Nitride), which is semiconductor device, and the transmit signal output power of the solid state high power amplifier unit is generated by combining the transmit signal power of the solid state power amplifier configured in parallel through a design and fabricated waveguide type transmit signal combine assembler. Designed solid state high power amplifier unit demonstrated C-band 500 MHz bandwidth, maximum 10.5% duty cycle, transmit pulse width from $0.0{\mu}s{\sim}000{\mu}s$, and transmit signal power is 44.98 kW(76.53 dBm).

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.5
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• pp.51-56
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• 2020

Measurement accuracy and required time is important to make ATE(Automatic test equipment) system in Ka band, and SCPI commands of power meter which is a representative RF test equipment are studied in this paper. Comparison data between FETCH and MEASURE which are SCPI commands are measured in 30 G ~ 31 GHz and -70 ~ +20 dBm using two power sensor. The data show that FETCH which is the fastest SCPI is able to get reliable data in linear interval above noise level. MEASURE which is the best accurate command takes longer time than FETCH, and the longest time is 13.2 seconds. These results offer that measurement accuracy and required time of the two SCPI for power meter and would be used as a guideline for efficient ATE system in Ka band.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.11
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• pp.1311-1316
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• 2014

To be used in a transmitter of a satellite transponder of this paper, X band 25W power amplifier module, a part constituting of high-power amplifier is transmitted to the equipment for transmitting to geostationary communications satellites(36,000Km distance). PAM consisted a total of four power amplifier module has a high output characteristic of the high-output amplifier is used in the ground station. Used in conjunction with the structured type power amplifier module is composed of Serial Combining Structure. This PAM(Power Amplifier Module) configured by combining the circuit with the power amplifier, 10 MMIC chips and the Al2O3 thin film substrate using a Hybrid Technique of power amplifier module, was implemented at X band PAM(Power Amplifier Module) of 25W grade.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.99-104
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• 2020

In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.327-330
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• 1998

A 2watts MMIC(Monolithic Microwave Integrated Circuits) SSPA(Solid State Power Amplifiers) for 20GHz band communication systems has been designed, manufactured and measured. The 0.15um pHEMT technologywith the gate size of 400um for single device was used for the fabrication of MMIC Power Amplifier chips. The precision MIC patterns for the peripherals like power combiner/divider and microstrip lines were realized using hard substrate for gold wire/ribbon bonding. The measured data shows that this MMIC SSPA has the linear gain of 18dB, output power of 33.42dBm(2.2Watts)at 20~21GHz.