• Bulletin of the Korean Chemical Society
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• 제18권6호
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• pp.567-573
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• 1997

Photoinduced electron transfer from the charge-transfer excited states of Ru(tpy)(bpy(COOH)₂)$CN^+$, Ru(tpy)(bpy(COOH)₂)$Cl^+$, Ru(tpy)(bpy(COOH)₂)H₂+O², and Ru(tpy)(bqu(COOH)₂)$Cl^+$ to the conduction band of TiO₂ has been studied through photoelectrochemical methods. Ru(tpy)(bpy(COOH)₂)$CN^+$ produced the highest current density and open-circuit photovoltage, whereas Ru(tpy)(bqy(COOH)₂)$Cl^+$ produced the lowest values. A potential barrier was employed to explain the experimental result that the rate of the electron transfer increases with increasing the energy difference between the donor and acceptor. A sensitizer with a high current density yielded a high photovoltage and a high conversion efficiency. The reduction rate of the oxidized sensitizer decreased with the increases in the reduction potential of the sensitizer, resulting in a poor stability of a photoelectrochemical cell.

• 한국세라믹학회지
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• 제32권11호
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• pp.1262-1268
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• 1995

Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively.

• 태양에너지
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• 제8권2호
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• pp.12-18
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• 1988

The effect of surface recombination current density on the saturation current density in Si solar cell has been studied. Theoretical model for surface recombination current was set up from emitter transparent model of M.A. Shibib, and saturation current of Si solar cell made by ion implantation method was also measured by digital electrometer. The theoretical surface recombination current density which is the same as saturation surface recombination current density in Shibib model was $10^{-11}[A/cm^2]$ and the measured value was ranged from $8{\times}10^{-10}$ to $2{\times}10^{-9}[A/cm^2]$. Comparing with the ideal p-n junction of Shockley, transparent emitter model shows improved result by $10^2$ order of saturation current density. But there still exists $10^2$ order of difference of saturation current density between theoretical and actual values, which are assumed to be caused by 1) leakage current through solar cell edge, 2) recombination of carriers in the depletion layer, 3) the series resistance effect and 4) the tunneling of carriers between states in the band gap.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.340-341
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• 2012

In this work, we investigated the effects of temperature stress on flatband voltage (VFB) shifts of HfO2-SiO2 double gate dielectrics devices. Fig. 1 shows a high frequency C-V of the device when a positive bias for 10 min and a subsequent negative bias for 10 min were applied at room temperature (300 K). Fig. 2 shows the corresponding plot when the same positive and negative biases were applied at a higher temperature (473.15 K). These measurements are based on the BTS (bias temperature stress) about mobile charge in the gate oxides. These results indicate that the positive bias stress makes no difference, whereas the negative bias stress produces a significant difference; that is, the VFB value increased from ${\Delta}0.51$ V (300 K, Fig. 1) to ${\Delta}14.45$ V (473.15 K, Fig. 2). To explain these differences, we propose a mechanism on the basis of oxygen vacancy in HfO2. It is well-known that the oxygen vacancy in the p-type MOS-Cap is located within 1 eV below the bottom of the HfO2 conduction band (Fig. 3). In addition, this oxygen vacancy can easily trap the electron. When heated at 473.15 K, the electron is excited to a higher energy level from the original level (Fig. 4). As a result, the electron has sufficient energy to readily cross over the oxide barrier. The probability of trap about oxygen vacancy becomes very higher at 473.15 K, and therefore the VFB shift value becomes considerably larger.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.179-179
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• 2016

A radio-frequency (RF) Inductively Coupled Plasma (ICP) torch system was used for boron-nitride nano-tube (BNNT) synthesis. Because of electrodeless plasma generation, no electrode pollution and effective heating transfer during nano-material synthesis can be realized. For stable plasma generation, argon and nitrogen gases were injected with 60 kW grid power in the difference pressure from 200 Torr to 630 Torr. Varying hydrogen gas flow rate from 0 to 20 slpm, the electrical and optical plasma properties were investigated. Through the spectroscopic analysis of atomic argon line, hydrogen line and nitrogen molecular band, we investigated the plasma electron excitation temperature, gas temperature and electron density. Based on the plasma characterization, we performed the synthesis of BNNT by inserting 0.5~1 um hexagonal-boron nitride (h-BN) powder into the plasma. We analysis the structure characterization of BNNT by SEM (Scanning Electron Microscopy) and TEM (Transmission Electron Microscopy), also grasp the ingredient of BNNT by EELS (Electron Energy Loss Spectroscopy) and Raman spectroscopy. We treated bundles of BNNT with the atmospheric pressure plasma, so that we grow the surface morphology in the water attachment of BNNT. We reduce the advancing contact angle to purity bundles of BNNT.

• 대한원격탐사학회지
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• 제25권2호
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• pp.193-203
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• 2009

적설은 지표 에너지수지를 결정하는 중요한 변수중의 하나이다. 위성자료를 이용하여 지면 정보를 산출함에 있어서 적설과 구름을 구분하는 것은 매우 중요한 위성전처리 과정이다. 일반적으로 잘못된 적설과 구름의 분류는 위성자료를 이용한 지면 정보 산출에 있어서 직접적인 오차 요인이 된다. 따라서, 본 연구에서는 원격탐사 자료를 이용하여 적설 지역을 탐지하는 알고리즘에 대해서 연구하고자 한다. 적설역을 탐하지 하기 위해서, 가장 많이 사용되는 정규화 적설 지수(NDSI: Normalized Difference Snow Index)를 사용하지 않고 가시채널과 적외 채널을 이용한 방법을 제시하였다. COMS 기상영상기 (MI: Meteorological Imager) 채널에서는 정규적설 지수 산출 시 요구되는 근적외 채널을 탑재하지 않기 때문이다. 가시 채널을 이용한 적설 탐지는 구름이 혼재되어 있지 않은 지역에서는 잘 탐지하였으나 구름과 혼재되어 있는 지역에서는 어려움이 있다. 이러한 어려움을 보완하기 위해 적외채널 온도차 ($11{\mu}m\;-\;3.7{\mu}m$)를 이용하는 방법을 수행하였다. 온도차를 이용하는 방법은 가시채널만을 적용했을 때 보다는 향상된 탐지 능력을 보인다.

• Current Photovoltaic Research
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• 제8권1호
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• pp.27-32
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• 2020

CuS thin films were deposited on glass substrates at room temperature by RF magnetron sputtering. The structural and optical properties of CuS thin films grown by varying RF-power from 40 W to 100 W were studied. From the XRD analysis, we confirmed hexagonal crystal structures grown in the preferred orientation of the (110) plane in all CuS thin films, and the intensity of the main diffraction peak increased in proportion to the increase of RF-power. In the case of CuS thin film deposited at 40W, small-sized particles formed a thin and dense surface morphology with narrow pore spacing, relatively. As the power increased, the grain size and grain boundary spacing increased sequentially. The peaks for the binding energy of Cu 2p_3/2 and Cu 2p_1/2 were determined at 932.1 eV and 952.0 eV, respectively. The difference in binding energy for the Cu²⁺ states was the same at 19.9 eV regardless of process parameters. The transmittance and band gap energy in the visible region tended to decrease with increasing sputtering powers.

• 대한화학회지
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• 제30권1호
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• pp.47-50
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• 1986

산화아연에 흡착된 $O_2^-$의 광탈착이 ZnO-$O_2(N_2)$-rubrene-bromobenzene계에서 연구되었다. 산화아연의 금지대 에너지(3.2eV)보다 큰 에너지를 가진 빛을 계에 조사할 때, 산화아연의 양이 증가함에 따라 변화된 rubrene의 양도 증가하였다. 그러나 3.2eV보다 적은 에너지의 빛을 조사시켰을 때는 산화아연의 양이 증가함에 따라 변화된 rubrene의 양은 감소하였다. ZnO-$O_2$-rubrene-bromobenzene계와 ZnO-$N_2$-rubrene-bromobenze계에서의 변화된 rubrene의 양은 현저한 차이가 있었다. 이 사실들로 부터 산화아연에 흡착된 $O_2^-$가 광탈착 과정에서 단일항 산소로 변화하고 변화된 단일항 산소가 rubrene과 반응하는 것으로 생각되었다.

• 한국결정학회지
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• 제8권1호
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• pp.48-58
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• 1997

[ $CuInTe_2$ ] 다결정은 수평전기로에서 합성하고, $CuInTe_2$ 단결정은 수직 Bridgman 방법으로 성장시켰다. $CuInTe_2$ 단결정의 c축에 수직 및 평행한 시료의 광전도도와 광발광특성을 293K에서 20 K의 온도영역에서 측정하였다. 측정된 광전류 봉우리로부터 구한 c축에 수직 및 평행한 시료의 에너지 띠 간격은 상온에서 각각 0.948 eV와 0.952 eV였다. 광전류 봉우리와 광발광 봉우리의 에너지차는 포논에너지이며 상온에서 c축에 수직 및 평행한 시료의 에너지차는 각각 22.12 meV와 21.4 meV였다. 또한 광전류 스펙트럼으로부터 시료의 spin-orbit 상호작용과 결정장 상호작용에 의한 가전자대의 갈라짐 ${\Delta}cr$과 ${\Delta}so$는 각각 0.046, 0.014 eV였다.

• 한국산림과학회지
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• 제96권5호
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• pp.591-601
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• 2007

Spatial information on forest biomass is an important factor to evaluate the capability of forest as a carbon sequestrator and is a core independent variable required to drive models which describe ecological processes such as carbon budget, hydrological budget, and energy flow. The objective of this study is to understand the relationship between satellite image and field data, and to quantitatively estimate and map the spatial distribution of forest biomass. Landsat Enhanced Thematic Mapper (ETM+) derived vegetation indices and field survey data were applied to estimate the biomass distribution of mountainous forest located in Gwangneung Experimental Forest (230 ha). Field survey data collected from the ground plots were used as the dependent variable, forest biomass, while satellite image reflectance data (Band 1~5 and Band 7), Normalized Difference Vegetation Index (NDVI), Soil-Adjusted Vegetation Index (SAVI), and RVI (Ratio Vegetation Index) were used as the independent variables. The mean and total biomass of Gwangneung catchment area were estimated to be about 229.5 ton/ha and $52.8{\times}10^3$ tons respectively. Regression analysis revealed significant relationships between the measured biomass and Landsat derived variables in both of deciduous forest ($R^2=0.76$, P < 0.05) and coniferous forest ($R^2=0.75$, P < 0.05). However, there still exist many uncertainties in the estimation of forest ecosystem parameters based on vegetation remote sensing. Developing remote sensing techniques with adequate filed survey data over a long period are expected to increase the estimation accuracy of spatial information of the forest ecosystem.