• Journal of the Microelectronics and Packaging Society
• /
• v.27 no.1
• /
• pp.1-7
• /
• 2020

The backside metallization process is typically used to attach a chip to a lead frame for semiconductor packaging because it has excellent bond-line and good electrical and thermal conduction. In particular, the backside metal with the Ag/Sn/Ag sandwich structure has a low-temperature bonding process and high remelting temperature because the interfacial structure composed of intermetallic compounds with higher melting temperatures than pure metal layers after die attach process. Here, we introduce a die attach process with the Ag/Sn/Ag sandwich structure to apply commercial semiconductor packages. After the die attachment, we investigated the evolution of the interfacial structures and evaluated the shear strength of the Ag/Sn/Ag sandwich structure and compared to those of a commercial backside metal (Au-12Ge).

• Transactions of the Korean Society of Pressure Vessels and Piping
• /
• v.16 no.1
• /
• pp.37-41
• /
• 2020

The Nuclear containment building is a main safety-related structure that performs shielding and conservation functions to prevent highly radioactive materials from leakage to the outside environment in the case of various environmental conditions and postulated accidents. The containment building contains a reactor, steam generator, pressurizer, tank, reactor coolant system, auxiliary system and engineering safety system, and is designed so that highly radioactive materials above the limits specified in 10 CFR 100 do not escape to the outside environment in the case of LOCA(Loss of Coolant Accident) for instance. The containment metal liner plate(CLP) is a carbon steel plate with a nominal plate thickness of 6 mm, which functions as a mold for the wall and dome of the containment building when concrete is filled, fulfills airtightness to prevent leakage of seriously radioactive materials. In recent years, backside corrosion was found on the liner plate in some domestic nuclear power plants. The main cause of backside corrosion was unfilled concrete. In this paper, an inspection technique of assessing filling suitability for CLP backside concrete is developed. Results show that the validity of inspection technique for CLP backside concrete using vibration sensor is successfully verified.

• Corrosion Science and Technology
• /
• v.3 no.5
• /
• pp.194-197
• /
• 2004

The corrosion resistance of several kind of ME (Metal Evaporated) tape has been investigated both in mild sulfuric acid solution and NaCl solution by electrochemical impedance spectroscopy. It was found that the degradation of ME tapes was accelerated with increasing the concentration of sulfuric acid. There was no significant change in corrosion resistance when the concentration of NaCl was under 3.5 wt%. However, the impedance value decreased when the concentration of NaCl was up to 10 wt%. The degradation of backside of ME tapes was also investigated by AC impedance measurements. The results showed that the impedance behavior of backside plastic film changed with the concentration of sulfuric acid even at the beginning of immersion, implying the changing of the permeability for the backside of ME tapes. It was also found that the corrosion resistance of DVC (Digital Video Cassette) ME tape was better that that of Hi-8mm ME tapes in sulfuric acid solutions. Also, the backside of DVC ME tape showed better water resistance than that of Hi8 ME tapes.

• Korean Journal of Materials Research
• /
• v.34 no.3
• /
• pp.170-174
• /
• 2024

In this study, we report the microstructural evolution and shear strength of an Sn-Sb alloy, used for die attach process as a solder layer of backside metal (BSM). The Sb content in the binary system was less than 1 at%. A chip with the Sn-Sb BSM was attached to a Ag plated Cu lead frame. The microstructure evolution was investigated after die bonding at 330 ℃, die bonding and isothermal heat treatment at 330 ℃ for 5 min and wire bonding at 260 ℃, respectively. At the interface between the chip and lead frame, Ni₃Sn₄ and Ag₃Sn intermetallic compounds (IMCs) layers and pure Sn regions were confirmed after die bonding. When the isothermal heat treatment is conducted, pure Sn regions disappear at the interface because the Sn is consumed to form Ni₃Sn₄ and Ag₃Sn IMCs. After the wire bonding process, the interface is composed of Ni₃Sn₄, Ag₃Sn and (Ag,Cu)₃Sn IMCs. The Sn-Sb BSM had a high maximum shear strength of 78.2 MPa, which is higher than the required specification of 6.2 MPa. In addition, it showed good wetting flow.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2009.08a
• /
• pp.213-213
• /
• 2009

• Journal of Electrical Engineering and Technology
• /
• v.4 no.4
• /
• pp.546-551
• /
• 2009

In this paper, we describe a self-aligned fabrication method for a nano-patterned bottom electrode using flood exposure from the backside. Misalignments between layers could cause the final devices to fail after the fabrication of the nano-scale bottom electrodes. A self-alignment was exploited to embed the bottom electrode inside the glass substrate. Aluminum patterns act as a dry etching mask to fabricate glass trenches as well as a self-aligned photomask during the flood exposure from the backside. The patterned photoresist (PR) has a negative sidewall slope using the flood exposure. The sidewall slopes of the glass trench and the patterned PR were $54.00^{\circ}$ and $63.47^{\circ}$, respectively. The negative sidewall enables an embedment of a gold layer inside $0.7{\mu}m$ wide glass trenches. Gold residues on the trench edges were removed by the additional flood exposure with wet etching. The sidewall slopes of the patterned PR are related to the slopes of the glass trenches. Nano-scale bottom electrodes inside the glass trenches will be used in beam resonators operating at high resonant frequencies.

• Korean Journal of Materials Research
• /
• v.16 no.9
• /
• pp.550-556
• /
• 2006

Photosensitive carbon nanotube (CNT) pastes are explored to develop a CNT field emitter for field emission display (FED) application. We formulated a photosensitive paste including multi-walled CNTs (MWNTs) for screen printing. The photosensitive CNT paste was synthesized by mixing of MWNTs, inorganic fillers (nano metal), organic vehicle, monomers and photo initiator. The CNT paste films were patterned by using backside exposure technique. The CNTs were strongly fixed on a cathode by formation of carbon residue during firing process. For the CNT emitters, current-voltage(I-V) characteristics and images of field emission were evaluated. The emission properties of CNT emitters are dependent on the paste composition. A turn-on electric field for the CNT field emitters is measured to be 1 V/$\mu$m. Additionally, the effect of heat treatment parameter on field emission properties was discussed. The newly formulated photosensitive CNT paste can be potentially applicable to highly reliable CNT field emitters.

• Proceedings of the KIEE Conference
• /
• 2008.10a
• /
• pp.131-132
• /
• 2008

We describe a fabrication method of submicron glass trenches which have embedded metal lines for the future application of nano-scale RF MEMS devices. The glass wafer was etched using two different conditions to identify the relationship between the slope of glass trenches and the slope of photroresist. A self-aligned metal photomask and negative photroresist (PR) slope were used to insert metal lines inside the glass trenches. The PR slope patterned by backside photolithography was affected by the profile of preformed glass trenches. Gold was well fabricated in the $0.7{\mu}m$ wide trench thanks to the negative PR slope. Nano-scale glass trenches with embedded metal lines can be used as a bottom electrode in submicron beam resonators operating with a high resonant frequency.

• Journal of the Korean Vacuum Society
• /
• v.17 no.3
• /
• pp.211-214
• /
• 2008

GaN-based light-emitting diodes (LEDs) of a 405 nm wavelength have been fabricated on a sapphire substrate by metal organic chemical vapor deposition (MOCVD). In order to reflect the photons, which are generated in the InGaN active region and emitted to the backside, to the front surface, a reflection layer was deposited onto the back of the substrate. Aluminum was used as the reflection layer and Al was deposited on the sample followed by Ti evaporation for firm adhesion of the reflection layer to the substrate. The light extraction efficiency was enhanced 52 % by adoption of the Ti-Al reflection layer.

• Proceedings of the KIEE Conference
• /
• 1993.11a
• /
• pp.192-194
• /
• 1993

In this paper, a silicon piezoresistive accelerometer of which the cantilevers have uniform thickness is designed and fabricated with SOI wafer. The accelerometer consists of a seismic mass and four cantilevers, and is fabricated mainly by the anisotropic etching method using EPW etchant. The fabrication processes are that of the frontside processes including the etching of the cantilevers and the doubleside alignment holes, the diffusion of the piezoresisters and patterning of the contact windows, and the metal connection process, and that of the backside processes including the etching of the shallow cavity and the seismic mass. Because of the uniformity of thickness, the performance of the accelerometer fabricated with SOI wafer is expected to be better than that of accelerometer fabricated by the time-controlled etching method.