• Journal of Magnetics
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• v.14 no.3
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• pp.108-113
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• 2009

High-coercive garnet films have certain parameters suitable for creating reconfigurable magnetic atomic chips with visible geometry. However, the inner stresses and morphological properties, namely, networks of dislocations, layering and surface relief, and dependence of coercivity on thickness must be taken into account. Select features of films important for atomic trap creation have been studied experimentally and the supposed traps concept provided.

• Journal of the Korean Ceramic Society
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• v.28 no.2
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• pp.141-145
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• 1991

The effects of the melt stoichiometry on the concentration of electron and hole traps formed by intrinsic defects of LEC GaAs were studied employing DLTS measurement technique. The concentration of EL2 were varied from $10^{16}cm^{-3}$ to $10^{11}cm^{-3}$ when the arsenic atomic fraction in the melt ([As]/{[As]+[Ga]} varied from 0.5 to 0.42. Specifically, when the fraction falls below 0.46, the 띠2 concentration start to decrease sharply. For 68meV and 77/200meV traps, their concentration increase inversely with the arsenic atomic fraction and have the values in the range of TEX>$10^{15}cm^{-3}$ and $10^{14}cm^{-3}$, respectively. It is, therefore, concluded that these hole traps originated from the intrinsic acceptor defects including $GS^{AS}$.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.173.2-173.2
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• 2008

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.64-66
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• 2000

Theoretical foundations of atom dynamics in laser fields are reviewed in relation with applications to laser spectroscopy, control of atomic motion, atom traps and frequency standards. Quasiclassical kinetic equations are applied to multilevel atomic schemes interacting with counter-propagating laser waves to describe the properties of atomic populations and coherence and the time evolution of atomic distribution function. Basic types of the dipole radiation forces on atoms are discussed for the realistic cases of multilevel dipole interaction schemes such as 3(g)＋5(e), 3(g)＋3(e), 5(g)＋3(e), 5(g)＋7(e), 3(g)＋3(e)＋5(e) and 1(g)＋3(g)＋3(e)＋5(e).

• ETRI Journal
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• v.27 no.1
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• pp.118-121
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• 2005

Silicon dioxide ($SiO_2$) films prepared by plasma-enhanced atomic-layer deposition were successfully grown at temperatures of $100\;to\;250^{\circ}C$, showing self-limiting characteristics. The growth rate decreases with an increasing deposition temperature. The relative dielectric constants of $SiO_2$ films are ranged from 4.5 to 7.7 with the decrease of growth temperature. A $SiO_2$ film grown at $250^{\circ}C$ exhibits a much lower leakage current than that grown at $100^{\circ}C$ due to its high film density and the fact that it contains deeper electron traps.

• Preventive Nutrition and Food Science
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• v.3 no.2
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• pp.203-209
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• 1998

The development of methods for the identification of irradiated foods helps enforce national and international regulations on labelling to ensure the consumer's free choice to buy irradiated or unirradiated foods. and the availabilityof such methods may assist the promotion of international trade in irradiated food products and help prevent abuse of the technology. A number of approaches to determine the physical , chemical, microbiological and biological changes that occur in foods treated with ionizing radiation have been studied. However no single method is universally applicable. Among physical measurements, the leading methods of indentification are electron spin resonance (ESR) spectroscopy and thermoluminescence(TL). ESR is an established non-destructive method for the analysis of free radicals from their traps and TL is the emission of light from irradiated mineral extracts by heating. Viscosity of carbohydrate polymers by causing chain breaks by irradiation, measuring the impedance of potatoes and detection of gases produced radiolytically are promising techniques for identification purposes. Irradiated water-containing foods show significant supercooling when monitored with a differential scanning calorimeter (DSC), which can be applied to identifying irradiated ones.

• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.266-269
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• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

• Nuclear Engineering and Technology
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• v.4 no.1
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• pp.3-10
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• 1972

In order to verify the contribution of scattered photons in a restricted gamma-cell as a cause of the“before glow”on a thermoluminescent glow curve of natural quartz, the ratio of the scattered to primary radiation contributions (S/P) in the cell is measured and the relationship between the effective“before glow”height ( $h_{b}$) and S/P ratio is quantitatively investigated. The result shows quite good linear relationship between them with a correlation coefficient of ＋0.9, which possibly suggests that the electrons originally released by the photons of reduced energy are trapped in the shallower traps. Moreover, the ratios of $h_{b}$ to total glow area (At) and of effective “before glow”area (Ab) to At are also examined to see the relationships between S/P and each of them, respectively. The relationships are represented by exponential functions in the region of S/P greater than 0.035. Finally, the exposure limit for re-use of the natural quartz as a TLD was found to be approximately 10$^{5}$ R by analyzing total thermoluminescent output and corresponding exposure dose.ose.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.198-202
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• 2018

In this work, we have investigated the effect of a 30-min thermal anneal at $550^{\circ}C$ on the electrical characteristics of neutron-irradiated 4H-SiC MOSFETs. Thermal annealing can recover the on/off characteristics of neutron-irradiated 4H-SiC MOSFETs. After thermal annealing, the interface-trap density decreased and the effective mobility increased in terms of the on-characteristics. This finding could be due to the improvement of the interfacial state from thermal annealing and the reduction in Coulomb scattering due to the reduction in interface traps. Additionally, in terms of the off-characteristics, the thermal annealing resulted in the recovery of the breakdown voltage and leakage current. After the thermal annealing, the number of positive trapped charges at the MOSFET interface was decreased.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.3
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• pp.166-173
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• 2009

The reliability of hafnium oxide gate dielectrics incorporating lanthanum (La) is investigated. nMOSFETs with metal/La-doped high-k dielectric stack show lower $V_{th}$ and $I_{gate}$, which is attributed to the dipole formation at the high-k/$SiO_2$ interface. The reliability results well correlate with the dipole model. Due to lower trapping efficiency, the La-doping of the high-k gate stacks can provide better PBTI immunity, as well as lower charge trapping compared to the control HfSiO stacks. While the devices with La show better immunity to positive bias temperature instability (PBTI) under normal operating conditions, the threshold voltage shift (${\Delta}V_{th}$) at high field PBTI is significant. The results of a transconductance shift (${\Delta}G_m$) that traps are easily generated during high field stress because the La weakens atomic bonding in the interface layer.