• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• 자원환경지질
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• 제39권1호
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• pp.27-38
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• 2006

국내 심부 암반지하수에서의 고농도 불소의 산출을 지배하는 지질 및 수리지구화학적 환경을 이해하고자, 온천 개발 목적으로 착정한 심부지하수 관정(평균 심도 약 600m)에서 취득된 총 367개의 지하수 분석 자료에 대하여 지구화학적 고찰을 수행하였다. 이들 지하수에서의 불소 농도는 매우 높아 평균 5.65mg/L에 이르며, 특히 연구 대상 지하수 중 $72\%$에서 먹는 물 수질기준(1.5mg/L)을 초과하였다. 불소 함량은 일차적으로 지질 조건의 지배를 강하게 나타냄을 확인하였는데 가장 높은 농도는 화강암류 및 화강편마암 지역에서 산출되는 반면 화산암 및 퇴적암 지역에서는 가장 낮았다. 지하수의 수리지구화학상과 관련하여 보면, 중성 내지 약알칼리성인 $Ca-HCO_3$형 지하수에 비하여 알칼리성의 $Na-HCO_3$형 지하수가 현저히 높은 불소 함량을 나타내었다. 화강암류 및 화강편마암 지역에서 지하수의 심부 순환에 수반되는 장기간의 물-암석 반응이 고농도 불소 산출의 가장 중요한 이유로 생각된다. 방해석 침전 또는 양이온교환에 의한 Ca 이온의 감소, 그리고 뒤따라 발생하는 사장석과 불소 함유 수산화광물(특히 흑운모)의 용해로 특징되는 일련의 수리지구화학 반응이 이러한 환경 하에서의 고불소 지하수 생성의 원인으로 해석된다. 따라서 불소과다에 의한 물 공급 문제의 발생 가능성은 높은 pH 및 매우 높은 Na/Ca농도비를 나타내는 화강암류 및 화강편마암 지역의 지하수에서 가장 높다고 볼 수 있다