• 한국전기전자재료학회논문지
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• 제33권6호
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• pp.454-459
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• 2020

In this study, a TiO₂/TiO_2-x-based resistance variable memory was fabricated using a DC/RF magnetron sputtering system and ALD. In order to analyze the effect of oxygen plasma treatment on the performance of resistance random access memory (ReRAM), the TiO₂/TiO_2-x-based ReRAM was evaluated by applying RF power to the TiO_2-x oxygen-holding layer at 30, 60, 90, 120, and 150 W, respectively. The ReRAM was fabricated, and the electrical and surface area performances were compared and analyzed. In the case of ReRAM without oxygen plasma treatment, the I-V curve had a hysteresis curve shape, but the width was very small, with a relatively high surface roughness of the oxygen-retaining layer. However, in the case of oxygen plasma treatment, the HRS/LRS ratio for the I-V curve improved as the applied RF power increased; stable improvement was also noted in the surface roughness of the oxygen-retaining layer. It was confirmed that the low voltage drive was not smooth due to charge trapping in the oxygen diffusion barrier layer owing to the high intensity ReRAM applied with an RF power of approximately 150 W.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1345-1346
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• 2007

다양한 게이트 절연막의 펜타신 박막 트랜지스터의 전기적 특성을 atomic force microscope (AFM), X-선 회절을 사용하여 분석하였다. 펜타신 박막 트랜지스터는 thermal evaporator 방법을 사용하여 여러 폴리며 기판위에 제작하였다. Hexamethylsilasane (HMDS), polyvinyl acetate (PVA), polymethyl methacrylate (PMMA)등의 폴리머 기판을 사용하여 다양한 온도에서 증착시켰다. 이 때 PMMA위에 증착시킨 펜타신의 경우가 가장 큰 그레인 크기를 보였고, 가장 적은 트랩 농도를 보였다. 그리고 상부 전극 구조를 가진 박막 트랜지스터를 HMDS 처리를 한 $SiO_2$와 PMMA 절연막을 사용하여 제작하고 비교하였다. 이때 PMMA기판 위에 제작한 트랜지스터는 전계효과 이동도가 ${\mu}_{FET}=0.03cm^{2}/Vs$ 이고, 문턱이전 기울기 0.55V/dec, 문턱전압 $V_{th}=-6V$, on/off 전류비 $>10^5$의 전기적 특성을 보였고, $SiO_2$ 기판위에 제작한 트랜지스터는 전계효과 이동도 ${\mu}_{FET}=0.004cm^{2}/Vs$, 문턱이전 기울기 0.518 V/dec, 문턱전압 $V_{th}=5V$, on/off 전류비 $>10^4$의 전기적 특성을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.133-133
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• 2010

3-5족 화합물 반도체를 이용한 집광형 삼중 접합 태양전지는 35% 이상의 광변환 효율로 주목을 받고 있다. 일반적으로 삼중 접합 태양전지는 넓은 영역대의 파장을 흡수하기 위해 밴드갭이 다른 InGaP, GaAs, Ge이 사용된다. 그 중 하부셀은 기계적 강도가 높고 장파장을 흡수할 수 있는 Ge이 사용되는데, p-type Ge 기판위에 III-V 결정막 성장 시 5족 원소가 확산되어 pn접합을 형성하게 된다. 이러한 구조를 가진 Ge 하부셀이 효율적으로 홀-전자 쌍을 형성하기 위해서는 두꺼운 베이스와 얇은 에미터 접합이 필요하다. InGaP의 phosphorus는 낮은 확산계수로 인해 GaAs의 arsenic에 비해 얇은 접합이 형성 가능하며, Ge표면 에칭효과가 더 적다는 장점이 있다. 이를 고려해 우리 연구그룹에서는 metalorganic chemical vapor depostion(MOCVD)을 이용하여 Ge기판위에 성장한 InGaP layer의 특성을 관찰해 보았다. <111>로 $6^{\circ}$ 기울어진 p-type Ge(100) 기판위에 MOCVD를 통해 InGaP layer를 형성하였고, 성장된 layer를 atomic force microscope(AFM)와 high-resolution x-ray diffraction(HRXRD)을 이용하여 표면형상, 조성, 응력상태 등을 각각 관찰하였다. 또한 phosphorus 확산에 의해 형성되는 도핑농도는 electrochemical capacitance-voltage(ECV)을 이용하여 관찰하였다. 성장된 Ge기판위의 InGaP layer의 경우 특징적으로 높이 50 nm, 밑변 길이 $1\;{\mu}m$의 경사진 표면을 관찰할 수 있었으며, 이러한 구조는 TMIn과 TMGa의 비율이 증가 할수록 감소하였다. 따라서 이러한 경사진 형태의 구조는 격자 불일치 때문인 것으로 판단된다. 추가적으로 V/III ratio의 최적화를 통해 1.3 nm의 표면 거칠기를 갖는 InGaP layer를 얻을 수 있었다. ECV를 통해 Ge 하부셀의 pn접합 형성을 관찰한 결과 약 160 nm에서 접합이 형성되는 것을 관찰할 수 있었다. 또한, 같은 성장 조건의 샘플을 1000 초 열처리 후에 접합깊이의 변화를 관찰한 결과 180 nm에서 접합이 관찰되었지만, GaAs의 arsenic에 의한 pn접합은 열처리 후에 그 깊이가 170 nm에서 300 nm로 증가 하였다. 따라서 삼중접합 태양전지의 제작 공정을 고려할 경우 phosphorus에 의한 접합 형성이 Ge 하부셀의 동작 특성에 유리할 것으로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• 한국정밀공학회지
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• 제23권8호
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• pp.171-177
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• 2006

This study was performed as a part of the research on the development of a maskless and electroless process for fabricating metal micro/nanostructures by using a nanoindenter and an electroless deposition technique. $2-{\mu}m$-deep indentation tests on Ni and Cu samples were performed. The elastic recovery of the Ni and Cu was 9.30% and 9.53% of the maximum penetration depth, respectively. The hardness and the elastic modulus were 1.56 GPa and 120 GPa for Ni and 1.51 GPa and 104 GPa for Cu. The effect of single-point diamond machining conditions such as the Berkovich tip orientation (0, 45, and $90^{\circ}$ ) and the normal load (0.1, 0.3, 0.5, 1, 3, and 5 mN), on both the deformation behavior and the morphology of cutting traces (such as width and depth) was investigated by constant-load scratch tests. The tip orientation had a significant influence on the coefficient of friction, which varied from 0.52-0.66 for Ni and from 0.46- 0.61 for Cu. The crisscross-pattern sample showed that the tip orientation strongly affects the surface quality of the machined are a during scratching. A selective deposition of Cu at the pit-like defect on a p-type Si(111) surface was also investigated. Preferential deposition of the Cu occurred at the surface defect sites of silicon wafers, indicating that those defect sites act as active sites for the deposition reaction. The shape of the Cu-deposited area was almost the same as that of the residual stress field.

• Restorative Dentistry and Endodontics
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• 제44권2호
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• pp.19.1-19.9
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• 2019

Objectives: The purpose of this study was to evaluate the cyclic fatigue, bending resistance, and surface roughness of EdgeEvolve (EdgeEndo) and ProTaper Gold (Dentsply Tulsa Dental Specialties) nickel-titanium (NiTi) rotary files. Materials and Methods: The instruments (n = 15/each) were tested for cyclic fatigue in single- ($60^{\circ}$ curvature, 5-mm radius) and double-curved (coronal curvature $60^{\circ}$, 5-mm radius, and apical curvature of $30^{\circ}$ and 2-mm radius) artificial canals. The number of cycles to fracture was calculated. The bending resistance of both files were tested using a universal testing machine where the files were bent until reach $45^{\circ}$. Scanning electron microscopy and x-ray energy-dispersive spectrometric analysis were used for imaging the fractured segments, while the atomic force microscope was used to quantify the surface roughness average (Ra). Results: EdgeEvolve files exhibited higher cyclic fatigue resistance than ProTaper Gold files in single- and double-curved canals (p < 0.05) and both files were more resistant to cyclic fatigue in single-curved canals than double-curved canals (p < 0.05). EdgeEvolve files exhibited significantly more flexibility than did ProTaper Gold files (p < 0.05). Both files had approximately similar Ni and Ti contents (p > 0.05). EdgeEvolve files showed significantly lower Ra values than ProTaper Gold files (p < 0.05). Conclusions: Within the limitation of this study, EdgeEvolve files exhibited significantly higher cyclic fatigue resistance than ProTaper Gold files in both single- and double-curved canals.

• 대한금속재료학회지
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• 제49권4호
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• pp.342-347
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• 2011

We fabricated the silicon nanodots using the low pressure chemical vapor deposition technique to investigate their electron field emission characteristics. Atomic force microscope measurements performed for the silicon nanodot samples having various process parameters, such as, deposition time and deposition pressure, revealed that the silicon nanodots with an average size of 20 nm, height of 5 nm, and density of $1.3\;{\times}\;10^{11}\;cm^{-2}$ were easily formed. Electron field emission measurements were performed with the silicon nanodot layer as the cathode electrode. The current-voltage curves revealed that the threshold electric field was as low as $8.3\;V/{\mu}m$ and the field enhancement factor reached as large as 698, which is compatible with the silicon cathode tips fabricated by other techniques. These electron field emission results point to the possibility of using a silicon-based light source for display devices.

• 열처리공학회지
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• 제36권5호
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• pp.298-302
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• 2023

Transparent and conducting tungsten (W) doped indium oxide (IWO) thin films were deposited on the glass substrate by using RF magnetron sputtering and then electron irradiation was conducted to investigate the effect of electron irradiation on the optical and electrical properties of the films. The electron irradiated films showed three x-ray diffraction peaks of the In₂O₃ (222), (431) and (046) planes and the full width at half maximum values are decreased as increased electron irradiation energy. In the atomic force microscope analysis, the surface roughness of as deposited films was 1.70 nm, while the films electron irradiated at 700 eV, show a lower roughness of 1.28 nm. In this study, the figure of merit (FOM) of as deposited films is 2.07 × 10^-3 Ω^-1, while the films electron irradiated at 700 eV show the higher FOM value of 5.53 × 10^-3 Ω^-1. Thus, it is concluded that the post-deposition electron beam irradiation is the one of effective methods to enhance optical and electrical performance of IWO thin films.

• Composites Research
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• 제19권6호
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• pp.23-31
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• 2006

나노허니컴 구조물의 영률, 굽힘 탄성 계수. 공칭파괴강도를 구하였다. 양극산화 알루미늄은 잘 정렬된 나노허니컴 구조물의 일종으로서 공정이 간단하고, 높은 종횡비, 자가 정렬된 기공구조를 가지고 있고, 기공의 크기를 조절할 수 있다. 원자현미경으로 외팔보 굽힘 시험을 수행하였고 나노-UTM을 이용한 3점 굽힘 실험결과와 비교하였다. 또한 나노-UTM으로 인장시험을 수행하였다. 나노허니컴 구조물의 한쪽 면은 막혀 있어서, 일반적인 샌드위치 구조물의 면재에 비유될 수 있다. 하지만 이러한 막힌 면은 굽힘 강도 증가에 영향을 끼치지 못하고 균열선단으로 작용한다는 것을 알 수 있었다. 본 연구로 나노허니컴 구조물을 설계하는데 기초적인 물성을 제공하고자 한다.

• 대한치과보철학회지
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• 제54권2호
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• pp.120-125
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• 2016

목적: 본 연구는 in-vitro 상에서 recombinant human transforming growth factor-beta (rhTGF-${\beta}2$)와 poly(D,L-lactide-co-glycolide) (PLGA) 의 복합체를 티타늄 디스크 표면에 코팅하여, 생물학적으로 간엽줄기세포 증식에 미치는 영향을 조사하기 위해 시행되었다. 재료 및 방법: 양극산화 디스크에 일렉트로스프레이 코팅법을 이용하여 anodized 된 티타늄 디스크를 대조군으로 설정하고, rhTGF-${\beta}2$를 125 ng/ml와 500 ng/ml 농도로 코팅한 것을 실험군으로 하였다. 티타늄 디스크 표면에 분사된 복합체가 균일하게 분사되었는지 field-emission scanning electron microscopy (FE-SEM)을 통해 확인하였으며, atomic force microscope (AFM) test를 이용하여 rhTGF-${\beta}2$로 코팅한 디스크와 양극산화 디스크의 거칠기 차이를 확인하였다. 디스크 위에 간엽줄기세포 배양 후 1, 4, 7일에 세포증식 양상을 MTT (3-(4,5-dimethylthiazol-2-yl)-2,5 diphenyl-tetrazolium bromide) assay 검사를 통해 확인하였다. 결과: AFM 결과 대조군과 실험군에서 거칠기의 유의할만한 차이가 없었다 (P>.05). MTT 결과 7일차 배양 결과에서 125 ng/ml와 500 ng/ml PLGA/TGF-${\beta}2$처리된 그룹은 각각 평균 0.45와 0.48이였으며, 대조군은 평균 0.33으로 PLGA/TGF-${\beta}2$처리된 그룹에서 세포 증식이 더 활성화 되는 것을 확인할 수 있었다 (P<.05). 결론: rhTGF-${\beta}2$ 복합체를 electrospray법으로 코팅한 티타늄 표면에서 7일차에서 줄기간엽세포의 빠른 증식을 확인하였다. 또한 복합체 처리군의 농도가 증가할수록 높은 세포 성장 수치를 보였다.