• Title/Summary/Keyword: assisted ion transfer

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Removal of 2,4-D by an Fe(II)/persulfate/Electrochemical Oxidation Process (Fe(II)/과황산/전기화학적 산화 공정에 의한 2,4-D의 제거)

  • Hyun, Young Hwan;Choi, Jiyeon;Shin, Won Sik
    • Journal of Soil and Groundwater Environment
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    • v.26 no.1
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    • pp.45-53
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    • 2021
  • The removal of 2,4-dichlorophenoxyacetic acid (2,4-D) in aqueous solution by coupled electro-oxidation and Fe(II) activated persulfate oxidation process was investigated. The electrochemical oxidation was performed using carbon sheet electrode and persulfate using Fe(II) ion as an activator. The oxidation efficiency was investigated by varying current density (2 - 10 mA/㎠), electrolyte (Na2SO4) concentration (10 - 100 mM), persulfate concentration (5 - 20 mM), and Fe(II) concentration (10 - 20 mM). The 2,4-D removal efficiency was in the order of Fe(II) activated persulfate-assisted electrochemical oxidation (Fe(II)/PS/ECO, 91%) > persulfate-electrochemical oxidation (PS/ECO, 51%) > electro-oxidation (EO, 36%). The persulfate can be activated by electron transfer in PS/ECO system, however, the addition of Fe(II) as an activator enhanced 2,4-D degradation in the Fe(II)/PS/ECO system. The 2,4-D removal efficiency was not affected by the initial pHs (3 - 9). The presence of anions (Cl- and HCO3-) inhibited the 2,4-D removal in Fe(II)/PS/ECO system due to scavenging of sulfate radical. Scavenger experiment using tert-butyl alcohol (TBA) and methanol (MeOH) confirmed that although both sulfate (SO4•-) and hydroxyl (•OH) radicals existed in Fe(II)/PS/ECO system, hydroxyl radical (SO4•-) was the predominant radical.

Comparison of characteristics of silver-grid transparent conductive electrodes for display devices according to fabrication method (제조공법에 따른 디스플레이 소자용 silver-grid 투명전극층의 특성 비교)

  • Choi, Byoung Su;Choi, Seok Hwan;Ryu, Jeong Ho;Cho, Hyun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.27 no.2
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    • pp.75-79
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    • 2017
  • Honeycomb-shaped Ag-grid transparent conductive electrodes (TCEs) were fabricated using two different processes, high density plasma etching and lift-off, and the optical and electrical properties were compared according to the fabrication method. For the fabrication of the Ag-grid TCEs by plasma etching, etch characteristics of the Ag thin film in $10CF_4/5Ar$ inductively coupled plasma (ICP) discharges were studied. The Ag etch rate increased as the power increased at relatively low ICP source power or rf chuck power conditions, and then decreased at higher powers due to either decrease in $Ar^+$ ion energy or $Ar^+$ ion-assisted removal of the reactive F radicals. The Ag-grid TCEs fabricated by the $10CF_4/5Ar$ ICP etching process showed better grid pattern transfer efficiency without any distortion or breakage in the grid pattern and higher optical transmittance values of average 83.3 % (pixel size $30{\mu}m/line$ width $5{\mu}m$) and 71 % (pixel size $26{\mu}m/line$ width $8{\mu}m$) in the visible range of spectrum, respectively. On the other hand, the Ag-grid TCEs fabricated by the lift-off process showed lower sheet resistance values of $2.163{\Omega}/{\square}$ (pixel size $26{\mu}m/line$ width $18{\mu}m$) and $4.932{\Omega}/{\square}$ (pixel size $30{\mu}m/line$ width $5{\mu}m$), respectively.