• Title/Summary/Keyword: array surface temperature

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Reflow Behavior and Board Level BGA Solder Joint Properties of Epoxy Curable No-clean SAC305 Solder Paste (에폭시 경화형 무세정 SAC305 솔더 페이스트의 리플로우 공정성과 보드레벨 BGA 솔더 접합부 특성)

  • Choi, Han;Lee, So-Jeong;Ko, Yong-Ho;Bang, Jung-Hwan;Kim, Jun-Ki
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.1
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    • pp.69-74
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    • 2015
  • With difficulties during the cleaning of reflow flux residues due to the decrease of the part size and interconnection pitch in the advanced electronic devices, the need for the no-clean solder paste is increasing. In this study, an epoxy curable solder paste was made with SAC305 solder powder and the curable flux of which the main ingredient is epoxy resin and its reflow solderability, flux residue corrosivity and solder joint mechanical properties was investigated with comparison to the commercial rosin type solder paste. The fillet shape of the cured product around the reflowed solder joint revealed that the curing reaction occurred following the fluxing reaction and solder joint formation. The copper plate solderability test result also revealed that the wettability of the epoxy curable solder paste was comparable to those of the commercial rosin type solder pastes. In the highly accelerated temperature and humidity test, the cured product residue of the curable solder paste showed no corrosion of copper plate. From FT-IR analysis, it was considered to be resulted from the formation of tight bond through epoxy curing reaction. Ball shear, ball pull and die shear tests revealed that the adhesive bonding was formed with the solder surface and the increase of die shear strength of about 15~40% was achieved. It was considered that the epoxy curable solder paste could contribute to the improvement of the package reliability as well as the removal of the flux residue cleaning process.

미세금형 가공을 위한 전기화학식각공정의 유한요소 해석 및 실험 결과 비교

  • Ryu, Heon-Yeol;Im, Hyeon-Seung;Jo, Si-Hyeong;Hwang, Byeong-Jun;Lee, Seong-Ho;Park, Jin-Gu
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.81.2-81.2
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    • 2012
  • To fabricate a metal mold for injection molding, hot-embossing and imprinting process, mechanical machining, electro discharge machining (EDM), electrochemical machining (ECM), laser process and wet etching ($FeCl_3$ process) have been widely used. However it is hard to get precise structure with these processes. Electrochemical etching has been also employed to fabricate a micro structure in metal mold. A through mask electrochemical micro machining (TMEMM) is one of the electrochemical etching processes which can obtain finely precise structure. In this process, many parameters such as current density, process time, temperature of electrolyte and distance between electrodes should be controlled. Therefore, it is difficult to predict the result because it has low reliability and reproducibility. To improve it, we investigated this process numerically and experimentally. To search the relation between processing parameters and the results, we used finite element simulation and the commercial finite element method (FEM) software ANSYS was used to analyze the electric field. In this study, it was supposed that the anodic dissolution process is predicted depending on the current density which is one of major parameters with finite element method. In experiment, we used stainless steel (SS304) substrate with various sized square and circular array patterns as an anode and copper (Cu) plate as a cathode. A mixture of $H_2SO_4$, $H_3PO_4$ and DIW was used as an electrolyte. After electrochemical etching process, we compared the results of experiment and simulation. As a result, we got the current distribution in the electrolyte and line profile of current density of the patterns from simulation. And etching profile and surface morphologies were characterized by 3D-profiler(${\mu}$-surf, Nanofocus, Germany) and FE-SEM(S-4800, Hitachi, Japan) measurement. From comparison of these data, it was confirmed that current distribution and line profile of the patterns from simulation are similar to surface morphology and etching profile of the sample from the process, respectively. Then we concluded that current density is more concentrated at the edge of pattern and the depth of etched area is proportional to current density.

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Adsorption Characteristics of Hydrogen in Regular Single-Walled Carbon Nanotube Arrays at Low Temperature (저온에서 규칙적인 단일벽 탄소나노튜브 배열의 수소 흡착 특성)

  • Yang Gon Seo
    • Clean Technology
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    • v.29 no.3
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    • pp.217-226
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    • 2023
  • The amount of hydrogen adsorbed in arrays of single walled carbon nanotubes (SWNTs) was studied as a function of nanotube diameter and distance between the nearest-neighbor nanotubes on square arrangements using a grand canonical Monte Carlo simulation. The influence of the geometry of a triangle array with the same diameters and distances was also studied. Hydrogen-carbon and hydrogen-hydrogen interactions were modeled with Lennard-Jones potentials for short range interactions and electrostatic interactions were added for hydrogen-hydrogen pairs to consider quantum contributions at low temperatures. At 194.5 K, Type I isotherms for large-diameter SWNTs and Type IV isotherms without hysteresis between adsorption and desorption processes for wider tube separations were observed. At 200 bars, the gravimetric hydrogen storage capacity of the SWNTs was reached or exceeded the US Department of Energy (DOE) target, but the volumetric capacity was about 70% of the DOE target. At 77 K, a two-step adsorption was observed, corresponding to a monolayer formation step followed by a condensation step. Hydrogen was adsorbed first to the inner surface of the nanotubes, then to the outer surface, intratubular space and the interstitial channels between the nanotube bundles. The simulation indicated that SWNTs of various diameters and distances in a wide range of configurations exceeded the DOE gravimetric and volumetric targets at under 1 bar.

Vacuum Packaging of MEMS (Microelectromechanical System) Devices using LTCC (Low Temperature Co-fired Ceramic) Technology (LTCC 기술을 이용한 MEMS 소자 진공 패키징)

  • 전종인;최혜정;김광성;이영범;김무영;임채임;황건탁;문제도;최원재
    • Journal of the Microelectronics and Packaging Society
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    • v.10 no.1
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    • pp.31-38
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    • 2003
  • In the current electronic technology atmosphere, MEMS (Microelectromechanical System) technology is regarded as one of promising device manufacturing technologies to realize market-demanding device properties. In the packaging of MEMS devices, the packaged structure must maintain hermeticity to protect the devices from a hostile atmosphere during their operations. For such MEMS device vacuum packaging, we introduce the LTCC (Low temperature Cofired Ceramic) packaging technology, in which embedded passive components such as resistors, capacitors and inductors can be realized inside the package. The technology has also the advantages of the shortened length of inner and surface traces, reduced signal delay time due to the multilayer structure and cost reduction by more simplified packaging processes owing to the realization of embedded passives which in turn enhances the electrical performance and increases the reliability of the packages. In this paper, the leakage rate of the LTCC package having several interfaces was measured and the possibility of LTCC technology application to MEMS devices vacuum packaging was investigated and it was verified that improved hermetic sealing can be achieved for various model structures having different types of interfaces (leak rate: stacked via; $4.1{\pm}1.11{\times}10^{-12}$/ Torrl/sec, LTCC/AgPd/solder/Cu-tube; $3.4{\pm}0.33{\times}10^{-12}$/ Torrl/sec). In real application of the LTCC technology, the technology can be successfully applied to the vacuum packaging of the Infrared Sensor Array and the images of light-up lamp through the sensor way in LTCC package structure was presented.

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Characteristics of InGaAs/GaAs/AlGaAs Double Barrier Quantum Well Infrared Photodetectors

  • Park, Min-Su;Kim, Ho-Seong;Yang, Hyeon-Deok;Song, Jin-Dong;Kim, Sang-Hyeok;Yun, Ye-Seul;Choe, Won-Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.324-325
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    • 2014
  • Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

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STSAT-3 Main Payload, MIRIS Flight Model Developments

  • Han, Won-Yong;Lee, Dae-Hee;Park, Young-Sik;Jeong, Woong-Seob;Ree, Chang-Hee;Moon, Bong-Kon;Park, Sung-Joon;Cha, Sang-Mok;Nam, Uk-Won;Park, Jang-Hyun;Lee, Duk-Hang;Ka, Nung-Hyun;Seon, Kwang-Il;Yang, Sun-Choel;Park, Jong-Oh;Rhee, Seung-Wu;Lee, Hyung-Mok;Matsumoto, Toshio
    • The Bulletin of The Korean Astronomical Society
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    • v.35 no.1
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    • pp.40.1-40.1
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    • 2010
  • The Main payload of the STSAT-3 (Korea Science & Technology Satellite-3), MIRIS (Multipurpose Infra-Red Imaging System) has been developed for last 3 years by KASI, and its Flight Model (FM) is now being developed as the final stage. All optical lenses and the opto-mechanical components of the FM have been completely fabricated with slight modifications that have been made to some components based on the Engineering Qualification Model (EQM) performances. The components of the telescope have been assembled and the test results show its optical performances are acceptable for required specifications in visual wavelength (@633 nm) at room temperature. The ensuing focal plane integration and focus test will be made soon using the vacuum chamber. The MIRIS mechanical structure of the EQM has been modified to develop FM according to the performance and environment test results. The filter-wheel module in the cryostat was newly designed with Finite Element Analysis (FEM) in order to compensate for the vibration stress in the launching conditions. Surface finishing of all components were also modified to implement the thermal model for the passive cooling technique. The FM electronics design has been completed for final fabrication process. Some minor modifications of the electronics boards were made based on EQM test performances. The ground calibration tests of MIRIS FM will be made with the science grade Teledyne PICNIC IR-array.

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Application of Electrical Resistivity Measurement to an Evaluation of Saline Soil in Cropping Field (염류집적 농경지에서 전기비저항 탐사기법의 활용성)

  • Yoon, Sung-Won;Park, Sam-Gyu;Chun, Hyen-Jung;Han, Keung-Hwa;Kang, Seong-Soo;Kim, Myung-Suk;Kim, Yoo-Hak
    • Korean Journal of Soil Science and Fertilizer
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    • v.44 no.6
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    • pp.1035-1041
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    • 2011
  • Salinity of soil under the plastic film houses in Korea is known as a significant factor to lower the crop production and to hamper the sustainable agricultural land management. In this study we propose a field monitoring technique to examine the methods applied to minimize the adverse effect of salts in soil based on the relationship between soil electrical characteristics and soil properties. Field experiments for 4 different treatments (water only, fertilizer only, DTPA only, and DTPA and fertilizer together) were conducted on soils at the plastic film house built for cultivating a cucumber plant located at Chunan-si, Chungchungnam-do in Korea. The electrical resistivity was measured by both a dipole-dipole and wenner multi-electrodes array method. After the electrical resistivity measurement we also measured the soil water content, temperature, and electrical conductivity on surface soil. The resulted image of the interpreted resistivity by the inversion technique presented a unique spatial distribution depending on the treatment, implying the effect of the different chemical components. It was also highly suspected that resistivity response changed with the nutrients level, suggesting that our proposed technique could be the effective tool for the monitoring soil water as well as nutrient during the cropping period. Especially, subsoils under DTPA treatment at 40 to 60 cm depth typically presented lower soil water accumulation comparing to subsoils under non-DTPA treatment. It is considered that DTPA resulted in increase of a root water uptake. However, our demonstrated results were mainly based on qualitative comparison. Further experiments need to be conducted to monitor temporal changes of electrical resistivity using time lapse analysis, providing that a plant root activity difference based on changes of soil water and nutrients level in time.