• 제목/요약/키워드: application of M&V

검색결과 904건 처리시간 0.028초

CMOS를 이용한 Bluetooth용 이미지 제거 하향 주파수 변환기 설계 (Image-rejection down-conversion mixer for bluetooth application using CMOS)

  • 김대연;이진택;오승민;이상국
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 추계종합학술대회 논문집(1)
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    • pp.365-368
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    • 2000
  • This paper describes image-rejection down conversion mixer for bluetooth application using 0.35u CMOS process. the proposed architecture is composed of LO phase shifter, mixer core, IF buffer, and IF phase shifter. IF phase shifter is designed using polyphase fillet. Simulation results show conversion gain = l0㏈, input 1㏈ compression point = -15.7㏈m. input third-order intercept point(IIP3) = -4.4㏈m, and image-rejection ratio = 37.8㏈, respectively, at 3V supply voltage, and 15.7㎃ current.

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Study of the Application of Gel Electrolyte in the Reference Electrode of $Cu/CuSO_4$

  • Lin, Cunguo;Xu, Likun;Liu, Yang
    • Corrosion Science and Technology
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    • 제7권3호
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    • pp.179-181
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    • 2008
  • With nano-$SiO_2$ and sulphate acid, a kind of colloid electrolyte is synthesized by sol-gel method. It is placed outside the reference electrode as a layer of gel electrolyte so as to decrease the leaching of $Cu^{2+}$ and increase the life of the reference electrode. The performance of the gel electrode in simulating soil solution is measured as follows: the potential of the electrodes ranging from 60 mV to 80 mV (vs. SCE) with potential variation no more than $\pm10mV$, enough resistance to polarization. The $Cu^{2+}$ effusion rate of the reference electrode without gel electrolyte is 3 times that with colloid electrolyte, which means that gel electrolyte can extend the life of the reference electrode significantly.

고속 스위칭 Voltage Down Converter 회로 설계에 대한 연구 (Circuit Design of Voltage Down Converter for High Speed Application)

  • 이승욱;김명식
    • 전자공학회논문지SC
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    • 제38권2호
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    • pp.38-49
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    • 2001
  • 본 논문은 IC chip내에서 전압을 낮추는 목적으로 사용되는 VDC 회로의 주파수 특성을 향상시키기 위한 새로운 회로를 제안한다. 제안된 회로에는 적응 바이어싱 방법을 통해 저전력소모 및 고속동작을 동시에 만족하는 두 개의 센서와 이 센서로 구동되는 3개의 transistor가 부가적으로 첨가되어 구동 transistor의 gate 충.방진 전류를 보상하여 구동회로의 정상동작을 유지시켜준다. 본 연구에 사용된 회로는 $0.62{\mu}m$ N well CMOS 공정을 사용하였으며, H spice simulation 결과, 내부전압의 변화폭은 부하전류가 0에서 $200m{\Lambda}$까지 5ns동안 증가할 경우 약 1.0V로, $200m{\Lambda}$에서 0으로 감소할 경우 약 0.6V로, 내부전압 회복시간은 증가시 7ns, 감소시 10ns로, 일반적인 구동방식에 비해 성능이 향상되었으며 전체 회로에 소모하는 power는 약 1.2mW로 매우 작았다.

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Observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (VOFETs) with high leakage current

  • Sarjidan, M.A. Mohd;Shuhaimi, Ahmad;Majid, W.H. Abd.
    • Current Applied Physics
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    • 제18권11호
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    • pp.1415-1421
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    • 2018
  • Unlike ordinary organic field-effect transistors (OFETs), saturation current is hardly to be found in vertical OFETs (VOFETs). Moreover, the fabrication process of patterned sourced for VOFETs is quite complex. In this current work, a simple solution processed VOFET with directly deposited intermediate silver source electrode has been demonstrated. The VOFET exhibits a high leakage current that induces an inversion polarity of its transistor behavior. Interestingly, a well-defined saturation current was observed in the linear scale of transfer characteristic. The VOFET operated with high-current density > $280mA/cm^2$ at $V_d=5V$. Overview potential of the fabricated device in display application is also presented. This preliminary work does open-up a new direction in VOFET fabrication and their application.

A Study on the Application and Proposals of Safety Culture, New Public Management and Social Amplification of Risk Framework via Ship Accidents in Korea

  • Lee, Young-Chan;Park, Young-Soo;Yun, Yong-Sup;Kim, Jong-Su
    • 해양환경안전학회지
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    • 제21권3호
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    • pp.283-289
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    • 2015
  • This paper provides a study on the application and proposals of safety culture, new public management and social amplification of risk framework via ship accidents in Korea. This document analyzes what are the concept of safety culture, new public management as well as social amplification and risk framework and describes how 3 issues act, harmonize, interrelate through M/V Sewol accident. Korean government is needed to apply social amplification of risk framework to the in order to promote the safety culture in the maritime administration. Hence, this paper proposes safety framework in order to prevent and resolve future unexpected accident especially for maritime field.

Electrochemical Potentiostatic Activation & Its Application for Enhancing blue LED Efficiency

  • 김봉준;김학준;이영곤;백광선;이준기;김진혁
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2010년도 춘계학술발표대회
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    • pp.56.1-56.1
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    • 2010
  • A novel electrochemical potentiostatic method has been examined in order to enhance the hole concentration of p-type GaN thin films using KOH and HCl electrolyte. The hole concentration was increased more than 2 times by the electric voltge apply with the mobility of $10{\sim}12cm^2/V.s$. At optimum condition of 3V apply, hole concentration was enhanced more than reference sample from $1.7{\times}10^{-17}cm^{-3}$ to $4.1{\times}10^{-17}cm^{-3}$. Application of this activation method to blue-LED fabrication improved optical output from 18.4mW to 20.6mW, that is ~12% increase. SIMS analysis indicates that nearly 70% of hydrogen atoms could be removed by this method.

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저전압 고선형 바이폴라 OTA와 이를 이용한 IF 대역통과 필터 (Low-voltage high-linear bipolar OTA and its application to IF bandpass Filter)

  • 정원섭;손상희
    • 대한전자공학회논문지SD
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    • 제44권7호통권361호
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    • pp.37-44
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    • 2007
  • GSM 셀룰러폰을 위한 저전압 고선형 바이폴라 OTA와 이룡 이용한 IF bandpass filter(BPF)를 제안하였다. OTA는 저전압 선형 transconductor, translinear 전류이득 셀, 그리고 3개의 전류 미러로 구성 되어있다. BPF는 2개의 동일한 2차 BPF를 직렬 연결한 형태인데, 2차 BPF는 저항과 커패시터 그리고 2개의 OTA와 커패시터로 된 ground simulated inductor로 구성되어 있다. 8GHz bipolar transistor-array를 사용한 SPICE 시뮬레이션에서는 1mS의 transconductance의 OTA가 ${\pm}2%$ 이하의 선형 오차와 ${\pm}2\;V$에서 ${\pm}0.65\;V$이상의 선형범위를 가짐을 보여준다. transconductor의 온도계수는 $-90ppm/^{\circ}C$이하이다. BPF는 중심 주파수는 $85MHz\;Q$값은 80이 되도록 설계하였다. 중심주파수에서의 온도계수는 $-182ppm/^{\circ}C$이고, BPF의 소비전력은 128mW 이다.

New CMOS Fully-Differential Transconductor and Application to a Fully-Differential Gm-C Filter

  • Shaker, Mohamed O.;Mahmoud, Soliman A.;Soliman, Ahmed M.
    • ETRI Journal
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    • 제28권2호
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    • pp.175-181
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    • 2006
  • A new CMOS voltage-controlled fully-differential transconductor is presented. The basic structure of the proposed transconductor is based on a four-MOS transistor cell operating in the triode or saturation region. It achieves a high linearity range of ${\pm}\;1\;V$ at a 1.5 V supply voltage. The proposed transconductor is used to realize a new fully-differential Gm-C low-pass filter with a minimum number of transconductors and grounded capacitors. PSpice simulation results for the transconductor circuit and its filter application indicating the linearity range and verifying the analytical results using $0.35\;{\mu}m$ technology are also given.

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A Study on the VME-Based Application for Integrated Control of PEFP Linac Machine Components

  • Song, Young-Gi;An, Eun-Mi;Kwon, Hyeok-Jung;Cho, Yong-Sub
    • 한국정보처리학회:학술대회논문집
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    • 한국정보처리학회 2009년도 추계학술발표대회
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    • pp.141-142
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    • 2009
  • The PEFP (Proton Engineering Frontier Project) is constructing a 100MeV proton Linac (Linear Accelerator). The 20 MeV 20 mA proton beam has been serviced for an application in the fields of material, biological, information technology and medical sciences. For a stable and efficient acceleration of a proton beam, the control requirements must be optimized by studying various control methods. We propose that the integrated control system for the Linac machine components must be based on a distribution control method to improve a centralized control system. Based on EPICS (Experimental Physics and Industrial Control System) real-time software, the VME (Versa Module European package format) IOC (Input Output Controller) was developed under cross development environment with a RISC (Reduced Instruction Set Computer) PowerPC system. In this paper, we describe the design and implementation of distributed control system using the VME-based EPICS middleware for various components of the large proton accelerator.