• 한국재료학회지
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• 제16권4호
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• pp.225-230
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• 2006

Nanoimprint lithography (NIL) is a novel method of fabricating nanometer scale patterns. It is a simple process with low cost, high throughput and resolution. NIL creates patterns by mechanical deformation of an imprint resist and physical contact process. The imprint resist is typically a monomer or polymer formulation that is cured by heat or UV light during the imprinting process. Stiction between the resist and the stamp is resulted from this physical contact process. Stiction issue is more important in the stamps including narrow pattern size and wide area. Therefore, the antistiction layer coating is very effective to prevent this problem and ensure successful NIL. In this paper, an antistiction layer was deposited and characterized by PECVD (plasma enhanced chemical vapor deposition) method for metal stamps. Deposition rates of an antistiction layer on Si and Ni substrates were in proportion to deposited time and 3.4 nm/min and 2.5 nm/min, respectively. A 50 nm thick antistiction layer showed 90% relative transmittance at 365 nm wavelength. Contact angle result showed good hydrophobicity over 105 degree. $CF_2$ and $CF_3$ peaks were founded in ATR-FTIR analysis. The thicknesses and the contact angle of a 50 nm thick antistiction film were slightly changed during chemical resistance test using acetone and sulfuric acid. To evaluate the deposited antistiction layer, a 50 nm thick film was coated on a stainless steel stamp made by wet etching process. A PMMA substrate was successfully imprinting without pattern degradations by the stainless steel stamp with an antistiction layer. The test result shows that antistiction layer coating is very effective for NIL.

• 한국재료학회지
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• 제15권11호
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• pp.705-710
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• 2005

NIL (nanoimprint lithography) technique has demonstrated a high potential for wafer size definition of nanometer as well as micrometer size patterns. During the replication process by NIL, the stiction between the stamp and the polymer is one of major problems. This stiction problem is moi·e important in small sized patterns. An antistiction layer prevents this stiction ana insures a clean demolding process. In this paper, we were using a TCP (transfer coupled plasma) equipment and $C_4F_8$ as a precursor to make a Teflon-like antistiction layer. This antistiction layer was deposited on a 6 inch silicon wafer to have nanometer scale thicknesses. The thickness of deposited antistiction layer was measured by ellipsometry. To optimize the process factor such as table height (TH), substrate temperature (ST), working pressure (WP) and plasma power (PP), we were using a design of experimental (DOE) method. The table of full factorial arrays was set by the 4 factors and 2 levels. Using this table, experiments were organized to achieve 2 responses such as deposition rate and non-uniformity. It was investigated that the main effects and interaction effects between parameters. Deposition rate was in proportion to table height, working pressure and plasma power. Non-uniformity was in proportion to substrate temperature and working pressure. Using a response optimization, we were able to get the optimized deposition condition at desired deposition rate and an experimental deposition rate showed similar results.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2006년도 춘계학술대회 논문집
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• pp.86-90
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• 2006

Nanoimprint lithography (NIL) is a novel method to fabricate nanometer scale patterns. It is a simple process with low cost, high throughput and high resolution. NIL process creates patterns by the mechanical deformation of imprint resist and physical contact process. This physical contact process causes the stiction between the resist and the stamp. Stiction becomes a key issue especially in the stamps including narrow pattern size and wide area during NIL process development. The antistiction layer coating using fluorocarbon is very effective to prevent this problem and ensure successful NIL. In this paper, the concept of antistiction coating is explained and different preparation methods for nanoimprinting are briefly discussed.

• 한국재료학회지
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• 제17권1호
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• pp.31-36
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• 2007

Nanoimprint lithography (NIL) is a new lithographic method that offers a sub-10nm feature size, high throughput, and low cost. One of the most serious problems of NIL is the stiction between mold and resist. The antistiction layer coating is very effective to prevent this stiction and ensure the successful NIL results. In this paper, an antistiction layer was deposited by VSAM (vapor self assembly monolayer) method on silicon samples with FOTS (perfluoroctyltrichlorosilane) as a precursor for making an antistiction layer. A specially designed LPCVD (low pressure chemical vapor deposition) was used for this experiment. All experiments were achieved after removing the humidity. First, the evaporation test of FOTS was performed for checking the evaporation temperature at low pressure. FOTS was evaporated at 5 Tow and $110^{\circ}C$. In order to evaluate the temperature effect on antistiction layer, chamber temperature was changed from 50 to $170^{\circ}C$ with 0.1ml of FOTS for 1 minute. Good hydrophobicity of all samples was shown at about $110^{\circ}$ of contact angle and under $20^{\circ}$ of hysteresis. The surface energies of all samples calculated by Lewis acid/base theory was shown to be about 15mN/m. The deposited thicknesses of all samples measured by ellipsometry were almost 1nm that was similar value of the calculated molecular length. The surface roughness of all samples was not changed after deposition but the friction force showed relatively high values and deviations deposited at under $110^{\circ}$. Also the white circles were founded in LFM images under $110^{\circ}$. High friction forces were guessed based on this irregular deposition. The optimized VSAM process for FOTS was achieved at $170^{\circ}C$, 5 Torr for 1 hour. The hot embossing process with 4 inch Si mold was successfully achieved after VSAM deposition.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 G
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• pp.3331-3333
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• 1999

A novel antistiction method using photo resist is proposed and verified to improve the yield of polysilicon micromachining process. $7.5{\mu}m-thick$ polysilicon is used as a structural layer. Residual stress and stress gradient originated from polysilicon deposition with LPCVD process is relaxed by doping and thermal treatment. The stress gradient of stress-free polysilicon layer is $-0.755MPa/{\mu}m$.

• 한국재료학회지
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• 제15권3호
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• pp.149-154
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• 2005

Teflon like fluorocarbon thin films have been deposited on silicon and oxide molds as an antistiction layer for the hot embossing process by an inductively coupled plasma (ICP) chemical vapor deposition (CVD) method. The process was performed at $C_4F_8$ gas flow rate of 2 sccm and 30 W of plasma power as a function of substrate temperature. The thickness of film was measured by a spectroscopic ellipsometry. These films were left in a vacuum oven of 100, 200 and $300^{\circ}C$ for a week. The change of film thickness, contact angle and adhesion and friction force was measured before and after the thermal test. No degradation of film was observed when films were treated at $100^{\circ}C$. The heat treatment of films at 200 and $300^{\circ}C$ caused the reduction of contact angles and film thickness in both silicon and oxide samples. Higher adhesion and friction forces of films were also measured on films treated at higher temperatures than $100^{\circ}C$. No differences on film properties were found when films were deposited on either silicon or oxide. A 100 nm silicon template with 1 to $500\;{\mu}m$ patterns was used for the hot embossing process on $4.5\;{\mu}m$ thick PMMA spun coated silicon wafers. The antistiction layer of 10 nm was deposited on the silicon mold. No stiction or damages were found on PMMA surfaces even after 30 times of hot embossing at $200^{\circ}C$ and 10 kN.

• 센서학회지
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• 제9권3호
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• pp.233-241
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• 2000

본 연구에서는 동일한 테스트 구조물을 사용하여 현재 다결정실리콘 표면 미세가공 기술에서 널리 사용되고 있는 여러 가지 점착 방지법들의 성능을 비교하였다. 테스트 구조물로는 다양한 폭과 길이를 갖는 일반적인 cantilever와 dimple, antistiction tip, plate를 가지는 cantilever를 사용하였으며 구조물 형태에 따른 점착 방지 결과를 관찰하였다. 희생층 제거 후 구조물과 기판의 점착을 결정하는 건조과정에서는 증발법과 승화건조법을 사용하였다. 증발법에서는 methanol, IPA, DI water 등을 여러 최종 세척액으로 사용하여 표면장력과 세척 온도에 따른 점착 방지 결과를 비교하였다. 승화건조법에서는 중간 세척액으로 methanol을 사용하였다. 그리고 동일한 실험조건으로 stress gradient가 있는 동일한 구조물을 사용하여 stress gradient에 의한 점착 방지 결과를 관찰하였다. 결론적으로 승화건조법이 여러 가지 증발법보다 우수한 결과를 보여주었고 다결정 실리콘 표면 미세가공 기술로 미세 구조물을 부양시킬 때 승화건조법이 가장 우수한 방법이라고 사료된다.