• Applied Science and Convergence Technology
• /
• v.25 no.4
• /
• pp.73-76
• /
• 2016

Multi-layer films of $SiN_x/SiO_x$/InSnO with anti-reflective effect were grown by new-concept plasma enhanced chemical vapor deposition system (PECVD) with hybrid plasma source (HPS). Anti-reflective effect of $SiN_x/SiO_x$/InSnO was investigated as a function of ratio of $SiN_x$ and $SiO_x$ thickness. Multi-layers deposited by PECVD with HPS represents the enhancement of anti-reflective effect with high transmittance, comparing to the layers by conventional radio frequency (RF) sputtering system. This change is strongly related to the optical and physical properties of each layer, such as refractive index, composition, film density, and surface roughness depending on the deposition system.

• Journal of the Korean Vacuum Society
• /
• v.17 no.2
• /
• pp.138-147
• /
• 2008

$SiO_2/TiO_2/ZrO_2$ broadband anti-reflective multi-layer thin films were prepared at room temperature by RF sputtering system. Optical constants and structural properties on each layer of films were analyzed by spectroscopic ellipsometer and transmittance spectra of the films were measured by $UV-V_{is}$ spectrophotometer in the range of 300$\sim$900 nm. To evaluate the films, we compared the measured and analyzed spectra with designed spectra. We investigated influence of discrepancy of thickness and refractive indices of each layer on changes of the transmittance spectra. It was found that refractive indices and shape of dispersion of deposition materials are more contributed to changes of the transmittance spectra than thickness of layer.

• Journal of Korean Ophthalmic Optics Society
• /
• v.1 no.1
• /
• pp.93-102
• /
• 1996

The optical system of lens must be designed to tramsmit light over wide wavelength range and to have lower reflectivity in order to obtain higher spectral transmittance. However, the reflection color light appears due to the remain-reflection light in any optical system of lens. The wavelength of the reflection color light can be controlled by the structure of the number of layers, thickness of layer, reflective index, wavelength of incidence, and substrate etc. In the optical systems of the single layer and the double layers, the reflection color light appears in the condition of the anti-reflection of ${\lambda}s/{\lambda}$ = 1.0 by the color mixture of the remain-reflection lights in the ranges of the longer wavelength side and the shorter one of the ${\lambda}s/{\lambda}$ = 1.0, and of the double layers and triple layers, the reflection color light positioned at P1 < ${\lambda}s/{\lambda}$ < P2 appears in the condition of the antireflection of ${\lambda}s/{\lambda}$ = $PI{\ll}1$ and $P2{\gg}1$. In the optical system of the multi-layers, many antireflection points are existed at the various s/ values, and the reflection color light by the color mixture of the remain-reflection lights in the ranges except for the antireflection points.

• Proceedings of the KSME Conference
• /
• 2008.11a
• /
• pp.1825-1828
• /
• 2008

A simple method for the fabrication of porous nano-master for antireflective surface is presented. In conventional fabrication methods for antireflective surface, coating method with low refractive index has usually been used. However, it is required to have high cost and long times for mass production. In this paper, we suggested the fabrication method of antireflective surface by the hot embossing process using the porous nano patterned master on silicon wafer fabricated by low-temperature anodic aluminum oxidation. Through multi-AAO and etching processes, nano patterned master with high aspect ratio was fabricated at the large area. Pore diameter and inter-pore distance are about 150nm and from 150 to 200nm. In order to replicate anti-reflective structure, hot embossing process was performed by varying the processing parameters such as temperature, pressure and embossing time etc. Finally, antireflective surface can be successfully obtained after etching process to remove selectively silicon layer of AAO master.