• Title/Summary/Keyword: annealing.

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New Analysis Approach to the Characteristics of Excimer Laser Annealed Polycrystalline Si Thin Film by use of the Angle wrapping (엑시며 레이저에 의해 형성된 다결정 실리콘 박막의 Angle wrapping에 의한 깊이에 따른 특성변화)

  • Lee, Chang-U;Go, Seok-Jung
    • Korean Journal of Materials Research
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    • v.8 no.10
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    • pp.884-889
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    • 1998
  • Amorphous silicon films of large area have been crystallized by a line shape excimer laser beam of one dimensional scanning with a gaussian profile in the scanning direction. In order to characterize the crystalline phase transition of thickness variables in excimer laser annealing(ELA), angle wrapping method was used. And also to characterize the residual stresses of crystalline phase transition in the case of angle wrapped-crystalline silicon on corning 7059 glass, polarized raman spectroscopies were measured at various laser energy density and substrate temperature. The residual stress varies from $9.0{\times}10^9$ to $9.9{\times}10^9$, and from $9.9{\times}10^9$ to $1.2{\times}10^10$dyne/${cm}^2$ of the substrate temperature at room temperature and varies from $8.1{\times}10^9$ to $9.0{\times}10^9$, and from $9.0{\times}10^9$ to $9.9{\times}10^9$dyne/${cm}^2$ of the substrate temperature at $400^{\circ}C$ as a function of direction from surface to substrate. According to the direction from the surface in liquid phase to the interface and from the interface to near the substrate in solid phase of recrystallized Si thin film, respectively. Thus, the stress is increased from(Liquid phase to solid phase) with phase transition.

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Characteristics of Fe-6.5wt%Si Core Material by Chemical Vapor Deposition Method (화학기상증착에 의한 Fe-6.5wt%Si철심재료의 특성평가)

  • Yun, Jae-Sik;Kim, Byeong-Il;Park, Hyeong-Ho;Bae, In-Seong;Lee, Sang-Baek
    • Korean Journal of Materials Research
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    • v.11 no.6
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    • pp.512-518
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    • 2001
  • It has been well known that 6.5wt% Si steel sheets have excellent magnetic properties such as low core loss. high maximum permeability and low magnetostriction. In this work, we studied a method for producing 6.5wt% Si steel sheets using a chemical vapor deposition (CVD) method. The following is the procedure adopted in this work to produce 6.5wt% Si steel sheets; SiCl$_4$ gas is applied onto a low content-Si steel sheet placed in a tube furnace. Silicon atoms resulted from the decomposition of SiCl$_4$ are permeated through the surface of the steel sheet. Finally, by the diffusion process maintaining it under a high temperature the silicon atoms diffuse uniformly into the sheet. Through this process, 6.5wt% Si steel sheets can be obtained. The manufactured Fe-6.5wt% Si steel sheet with a thickness of 0.5mm exhibited a high frequency core loss (W$_{2}$1k/) of 8.92 W/kg. Its permeability increased from 37,100 to 53,300 at 1 tesular(T). The mechanical properties of the manufactured steel sheets were also estimated and the result showed that the workability was significantly improved by annealing in vacuum at 773k. Increased plastic deformation was also observed prior to fracture and the amount of grain boundary rupture was reduced.

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Fabrication of the Low Driving Voltage ZnS:Mn EL Device and Investigation of its Electro-optical Properties (저전압구동 ZnS:Mn EL device의 제작 및 전기 광학적 특성조사)

  • Kim, Jae-Beom;Kim, Do-Hyeong;Jang, Gyeong-Dong;Bae, Jong-Gyu;Nam, Gyeong-Yeop;Lee, Sang-Yun;Jo, Gyeong-Je;Jang, Hun-Sik;Lee, Hyeon-Jeong;Lee, Dong-Uk
    • Korean Journal of Materials Research
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    • v.10 no.4
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    • pp.290-294
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    • 2000
  • ZnS:Mn TFEL devices were fabricated by electron-beam evaporation method and then the electro-optical properties were investigated. To investigate the capacitance which was due to oxygen vacancy at the $Ta_2O_5$ thin film, AES(Auger Electron Spectroscopy) and C-F(capacitance-frequency) measurements were used. It was found that the capacitance was decreased by annealing the $Ta_2O_5$ film in oxygen ambience. From EL emission measurement, we observed the EL emission spectrum which had the peak range from 550nm and 650nm. This emission is associated with the transition from $^4T_1(^4G)$ first excited state to $^6A_1(^6S)$ ground state in the $3d^5$ energy level configuration of $Mn^{2+}$ occurs. The threshold voltage of EL device with $Ta_2O_5$ insulator layer was found to be 24V~28V. The CIE color coordinates of these emission are X=0.5151, Y=0.4202 which is yellowish orange emitting. The EL device using $Ta_2O_5$ insulator layer can be driven with a low voltage which is beneficial to the practical application.

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A Nucleic Acid Amplification Tests for Reliable HCV RNA Detection Method for Plasma-Derived Products (핵산증폭시험을 이용한 혈장분획물질에서 HCV RNA 검출)

  • Hong, Seung-Hee
    • Korean Journal of Microbiology
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    • v.44 no.4
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    • pp.293-298
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    • 2008
  • HCV is transmitted via various plasma derived products. Current methods to detect hepatitis C virus (HCV) are based on its antibody detection in the donated blood and plasma. Viral contamination can potentially escape such detection during the window period of infection, when no antibody is present or the level of antibody is too low to detect. It is trying to application of nucleic acid amplification tests (NAT) for the direct detection of HCV. The objective of this study was to develop a reliable NAT for the HCV RNA detection from plasma-derived products. The most useful primers was selected for NAT among 5 sets of primers. We have also found that QIAamp viral RNA isolation kit was the most efficient for HCV RNA isolation. The highest sensitivity and specificity was appeared in $48^{\circ}C$ annealing temperature and 30 pmol of primers. With a spiking of HCV to albumin, immunoglobulins and coagulation factors, NAT can detect up to 100 IU/ml. Meanwhile, COBAS amplicor HCV 2.0 afforded a lower sensitivity in high concentrated intramuscular immunoglobulins to below 500 IU/ml. Our results suggested that NAT appears to be a highly sensitive and specific method for HCV RNA detection in plasma-derived products.

Effect of ${Y_2}{O_3}$Buffer Layer on the Characteristics of Pt/$YMnO_3$/$Y_2$$O_3$/Si(MFIS) Structure (Pt/$YMnO_3$/$Y_2$$O_3$/Si(MFIS) 구조의 특성에 미치는 ${Y_2}{O_3}$층의 영향)

  • Yang, Jeong-Hwan;Sin, Ung-Cheol;Choe, Gyu-Jeong;Choe, Yeong-Sim;Yun, Sun-Gil
    • Korean Journal of Materials Research
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    • v.10 no.4
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    • pp.270-275
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    • 2000
  • The Pt/YMnO$_3$/Y$_2$O$_3$/Si structure for metal/ferroelectric/insulator/semiconductor(MFIS)-FET was fabricated and effect of $Y_2$O$_3$layer on the properties of MFIS structure was investigated. The $Y_2$O$_3$ thin films on p-type Si(111) substrate deposited by Pulsed Laser Deposition were crystallized along (111) orientation irrespective of the deposition temperatures. Ferroelectric YMnO$_3$ thin films deposited directly on p-type Si (111) by MOCVD resulted in Mn deficient layer between Si and YMnO$_3$. However, YMnO$_3$ thin films having good quality and stoichiometric composition can be obtained by adopting $Y_2$O$_3$ buffer layer. The memory window of the $Y_2$O$_3$thin films with YMnO$_3$ film is greater than that of the YMnO$_3$ thin films without $Y_2$O$_3$ film after the annealing at 85$0^{\circ}C$ in vacuum ambient(100mtorr). The memory window is 1.3V at an applied voltage of 5V.

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The Effects of Substrate Bias Voltage on the Formation of $(ZnS)_{1-x}-(SiO_2)_x$ Protective Films in Phase Change Optical Disk by R.F. Sputtering Method. (R.F. 스퍼터링법에 의한 상변화형 광디스크의 $(ZnS)_{1-x}-(SiO_2)_x$ 보호막 제조시 기판 바이어스전압의 영향)

  • Lee, Tae-Yun;Kim, Do-Hun
    • Korean Journal of Materials Research
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    • v.8 no.10
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    • pp.961-968
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    • 1998
  • In order to investigate the effects of substrate bias voltage on the formation of$ZnS-SiO_2$ protective film in phase change optical disk by R.F. magnetron sputtering method, thin dielectric film was formed on Si wafer and Corning glass by using ZnS(80mol%)-$SiO_2$(20mol%)t arget under argon gas. In this study, the Taguchi experimental method was applied in order to obtain optimum conditions with reduced number of experiments and to control numerous variables effectively. At the same time this method can assure the reproducibility of experiments. Optimum conditions for film formation obtained by above method were target RF power of 200 W. substrate RF power of 20 W, Ar pressure of 5 mTorr. sputtering time of 20 min.. respectively. The phase of specimen was determined by using XRD and TEM. The compositional analysis of specimen was performed by XPS test. In order to measure the thermal resistivity of deposited specimen, annealing test was carried out at $300^{\circ}C$ and $600^{\circ}C$. For the account of void fraction in thin film, the Bruggeman EMA(Effective Medium Approximation) method was applied using the optical data obtained by Spectroscopic Ellipsometry. According to the results of this work, the existence of strong interaction between bias voltage and sputtering time was confirmed for refractive index value. According to XRD and TEM analysis of specimen, the film structure formed in bias voltage resulted in more refined structures than that formed without bias voltage. But excess bias voltage resulted in grain growth in thin film. It was confirmed that the application of optimum bias voltage increased film density by reduction of void fraction of about 3.7%.

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Ferroelectric Properties of ErMnO3 Thin Film Prepared by Sol-gel Method (졸겔법으로 제조한 ErMnO3 박막의 강유전 특성)

  • Kim, Yoo-Taek;Kim, Eung-Soo;Chae, Jung-Hoon;Ryu, Jae-Ho
    • Journal of the Korean Ceramic Society
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    • v.39 no.9
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    • pp.829-834
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    • 2002
  • Ferroelectric properties of $ErMnO_3$ thin films deposited on Si(100) substrate using Sol-gel process with metal salts were investigated. $ErMnO_3$ thin films with a (001) preferred orientation were crystallized at 800$^{\circ}C$. The $ErMnO_3$ thin film post-annealed at 800$^{\circ}C$ for 1 h showed the dielectric constant(k) of 26 and the dielectric loss(tan ${\delta}$) of 0.032 at the frequency range from 1 to 100 KHz. The grain size of $ErMnO_3$ thin film post-annealed at 800 for 1 h was 10∼30 nm. The remanent polarization($P_r$) of the $ErMnO_3$ thin films increased with increasing (001) preferred orientation. The $ErMnO_3$ thin films post-annealed at 800$^{\circ}C$ for 1 h showed the remanent polarization($P_r$) of 400 nC/$cm^2$, with the increase of post-annealing time at 800$^{\circ}C$, the coercive field($E_c$) of thin films was lowered because the dense and homogeneous thin films were obtained.

Removal of Residual Stress and In-vitro Recording Test in Polymer-based 3D Neural Probe (폴리머 기반 3차원 뉴런 프로브의 잔류 스트레스 제거 및 생체 외 신호 측정)

  • Nam, Min-Woo;Lim, Chun-Bae;Lee, Kee-Keun
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.2
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    • pp.33-42
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    • 2009
  • A polymer-based flexible neural probe was fabricated for monitoring of neural activities from a brain. To improve the insertion stiffness, a 5 ${\mu}m$ thick biocompatible Au layer was electroplated between the top and bottom polymer layers. The developed neural probe penetrated a gel whose elastic modulus is similar to that of a live brain tissue without any fracture, To minimize mechanical residual stress and bending from the probe, two new methods were employed: (1) use of a thermal annealing process after completing the device and (2) incorporation of multiple different layers to compensate the residual stress between top and bottom layers. Mechanical bending around the probe tip was clearly removed after employing the two processes. In electrical test, the developed probe showed a proper impedance value to record neural signals from a brain and the result remained the same for 72 hours. In simple in-vitro probe characterization, the probe showed a great removal of residual stress and an excellent recording performance. The in-vitro recording results did not change even after 1 week, suggesting that this electrode has the potential for great recording from neuron firing and long-term implant performance.

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Graphoepitaxy of ZnO layers grown on periodic structured Si substrates (주기적 표면 구조의 SiO$_2$ 기판을 이용한 ZnO박막의 Graphoepitaxy)

  • Jung, Jin-U;Ahn, Hyeon-Cheol;Lee, Chang-Yong;Kim, Gwang-Hui;Choi, Seok-Cheol;Lee, Tae-Hun;Park, Seung-Hwan;Jung, Mi-Na;Jung, Myeong-Hun;Lee, Ho-Jun;Yang, Min;Yao, Takafumi;Chang, Ji-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.1
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    • pp.1042-1045
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    • 2005
  • The feasibility of graphoepitaxial growth of compound semiconductor has been studied. Two kinds of substrates were prepared; one is smooth substrate, the other one is a periodic structured substrate. ZnO film was deposited on both substrates by sputtering, and thermal treatment was performed to improve the crystal quality and investigate the effect of the periodic structure. Atomic force microscopy (AFM) and photoluminescence (PL) were used to characterize the samples. As a result, very similarchange, the improvement of crystallinity, has been observed from both samples, except the sample annealed at the highest temperature. It implies the periodic structure affects the crystallinity of the films, and the graphoepitaxy of compound semiconductors is possible by using appropriate surface structure.

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Computational Optimization of Bioanalytical Parameters for the Evaluation of the Toxicity of the Phytomarker 1,4 Napthoquinone and its Metabolite 1,2,4-trihydroxynapththalene

  • Gopal, Velmani;AL Rashid, Mohammad Harun;Majumder, Sayani;Maiti, Partha Pratim;Mandal, Subhash C
    • Journal of Pharmacopuncture
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    • v.18 no.2
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    • pp.7-18
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    • 2015
  • Objectives: Lawsone (1,4 naphthoquinone) is a non redox cycling compound that can be catalyzed by DT diaphorase (DTD) into 1,2,4-trihydroxynaphthalene (THN), which can generate reactive oxygen species by auto oxidation. The purpose of this study was to evaluate the toxicity of the phytomarker 1,4 naphthoquinone and its metabolite THN by using the molecular docking program AutoDock 4. Methods: The 3D structure of ligands such as hydrogen peroxide ($H_2O_2$), nitric oxide synthase (NOS), catalase (CAT), glutathione (GSH), glutathione reductase (GR), glucose 6-phosphate dehydrogenase (G6PDH) and nicotinamide adenine dinucleotide phosphate hydrogen (NADPH) were drawn using hyperchem drawing tools and minimizing the energy of all pdb files with the help of hyperchem by $MM^+$ followed by a semi-empirical (PM3) method. The docking process was studied with ligand molecules to identify suitable dockings at protein binding sites through annealing and genetic simulation algorithms. The program auto dock tools (ADT) was released as an extension suite to the python molecular viewer used to prepare proteins and ligands. Grids centered on active sites were obtained with spacings of $54{\times}55{\times}56$, and a grid spacing of 0.503 was calculated. Comparisons of Global and Local Search Methods in Drug Docking were adopted to determine parameters; a maximum number of 250,000 energy evaluations, a maximum number of generations of 27,000, and mutation and crossover rates of 0.02 and 0.8 were used. The number of docking runs was set to 10. Results: Lawsone and THN can be considered to efficiently bind with NOS, CAT, GSH, GR, G6PDH and NADPH, which has been confirmed through hydrogen bond affinity with the respective amino acids. Conclusion: Naphthoquinone derivatives of lawsone, which can be metabolized into THN by a catalyst DTD, were examined. Lawsone and THN were found to be identically potent molecules for their affinities for selected proteins.