• The Transactions of the Korean Institute of Electrical Engineers P
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• v.67 no.1
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• pp.33-36
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• 2018

The purpose of this study is to improve the efficiency of anti-pollution film for PV module. The anti-pollution coating process was performed on a glass substrate, which is the same material as the glass substrate for the PV module. We coated the anti-pollution film on the glass substrate by spray coating. After coating process, annealing process was performed during 1 hour at $200^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$. And then we analyzed the surface characteristics according to the annealing temperature of the film. Annealing process can also improve the durability of the coated film. And then we analyzed the anti-pollution characteristics, particle size of anti-pollution film, light transmittance. The particle size of anti-pollution film was analyzed with FE-SEM. The light transmittance was analyzed with UV-Visible spectroscopy including integrating sphere.

• Nuclear Engineering and Technology
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• v.6 no.1
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• pp.3-8
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• 1974

The annealing of natural beryl powder used for the thermoluminescent dosimetry was investigated in order to eliminate effect of previous exposure. Through the glow curve analysis, the optimal annealing treatment was found to be one hour annealing at 145$0^{\circ}C$, but annealing for one hour at 55$0^{\circ}C$ was sufficient for reuse of natural beryl powder. There are two distinguished glow peaks at $65^{\circ}C$ and 20$0^{\circ}C$ of heating temperature during readout process. The $65^{\circ}C$ glow peak fades away rapidly, but the 20$0^{\circ}C$ glow peak remains very stable. It is, therefore, quite feasible to use the 20$0^{\circ}C$ glow peak for thermoluminescent dosimetry.

• Journal of Magnetics
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• v.4 no.1
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• pp.5-9
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• 1999

Effect of sulfur segregation on tertiary recrystallization and magnetic induction during final annealing was investigated in a 3% Si-Fe electrical strip containing 6 ppm(LS) and 15 ppm(HS) sulfur. During final annealing, Auger peak height of segregated sulfur on the surface of the strips reached a maximum, and then decreased to low level with increasing annealing time, which is attributed to sulfur segregation and evaporation. The magnetic induction of the thin-gauged 3% Si strip was inversely proportional to the Auger peak height of segregated sulfur on the surface. The overall profile for surface segregation of sulfur and B10 was observed, irrespective of sulfur content in Si-Fe strips, but the peaks of LS strips appeared earlier than those of HS strips. The grain growth rate of the LS strips during final annealing was faster than that of the HS strips, which may be attributed to the pinning effects of segregated sulfur. With increasing final annealing temperature, B10 value increased rapidly and the saturation level in B10 increased.

• Journal of the Korean institute of surface engineering
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• v.40 no.6
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• pp.258-261
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• 2007

Relationships between the electrical resistivity and the growth characteristic of $SnO_2$ thin films were investigated. $SnO_2$ thin films with thickness from 64 nm to 91 nm were made by controlling the RF deposition energy from 80 to 150 W. These $SnO_2$ thin films were annealed at $200^{\circ}C{\sim}700^{\circ}C$ temperature range of $100^{\circ}C$ interval in the $O_2$ gas condition. After annealing treatments, the microstructures of the $SnO_2$ thin films were changed mixed structure(amorphous & crystalline) to lamina columnar crystalline structure. Both the film thickness and the grain size were increased with increasing the local crystallization of $SnO_2$ microstructure of thin films by annealing treatment. Their electrical resistivity increased up to the annealing temperature of $400^{\circ}C$, and then slowly decreased.

• Industry Promotion Research
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• v.1 no.1
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• pp.7-11
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• 2016

It was the electrical properties of IGZO prepared by the annealing in a vaccum and an atmosphere conditions to research the current-voltage characteristics. The IGZO film annealed in a vaccum became an amorphous structure but films annealed in an atmosphere condition had a crystal structure. Because of the content of oxygen vacancies during the annealing processes was changed, and the annealing in an atmosphere condition increased the oxygen vacancy in IGZO. Oxygen vacancy in IGZO increased the current and then it was observed the Ohmic contact at IGZO annealed in an atmosphere conditions. However, the IGZO prepared in a vaccum showed the Schottky contact.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.161-165
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• 2007

In this work, Ni thin films with different thickness from $1,523{\AA}\;to\;9,827{\AA}$ were deposited for the application of micro thermal flow sensors by a magnetron sputtering and oxidized through annealing at $450^{\circ}C$ with increasing annealing time. The initial variation of resistivity decreased radically with increasing films thickness, then gradually stabilizes as the thickness increases. The resistivity of Ni thin films with $3,075{\AA}$ increased suddenly with increasing annealing time at $450{\circ}C$, then gradually stabilizes as the thickness increases after the annealing time 9 h. In case of $3,075{\AA}\;and\;9,827{\AA}$ films, the average of TCR values, measured for the operating temperature range of $0^{\circ}C\;to\;180^{\circ}C$, were $2,413.1ppm/^{\circ}C\;and\;4,438.5ppm/^{\circ}C$, respectively. Because of their high resistivity and very linear TCR, Ni oxide thin films are superior to pure Ni and Pt thin films for flow and temperature sensor applications.

• Fashion & Textile Research Journal
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• v.9 no.3
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• pp.347-350
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• 2007

To analyse basic properties for making packing batt according to doubling condition, packing batt yarn, of $300^D$, $900^D$, $3600^D$ made from DTY yarn $150^D$/48 were produced from KTDI. The results are as follows: The birefringence of the sample yarn increased with increasing the annealing temperature and denier. The initial modulus of the sample yarn decreased with increasing the annealing temperature and denier. The higher than annealing temperature of $160^{\circ}C$, initial modulus of the sample are equilibrated. The strain recovery ratio of samples decreased with increasing the annealing temperature and denier. The lower than annealing temperature of $140^{\circ}C$, strain recovery ratio of the sample are decreased Where the $900^D$, $3600^D$ yarns are at $100^{\circ}C$ the specific bending rigidity value obtained is 0.65kgf/d but the twisted yarn (3,600) obtained 0.006 ($gfcm^2/tex^2$). However, where the heat temperature is $160^{\circ}C$, specific bending rigidity value obtained 0.003($gfcm^2/tex^2$).

• Journal of Magnetics
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• v.12 no.3
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• pp.129-132
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• 2007

Bismuth-substituted yttrium iron garnet (Bi:YIG, $Bi_{0.5}Y_{2.5}Fe_5O_{12}$) films were deposited with aerosol deposition method and their magnetic and optical properties were investigated as a function of annealing temperature. Since the ceramic films deposited with aerosol deposition method have not a perfect crystal structure due to non-uniform internal stress occurred by mechanical collision during their deposition, the post annealing could be a key process to release its internal stress and to improve its micro structure for optimizing the magnetic and magneto-optic properties of films. The crystallinity of Bi: YIG film was improved with increase of annealing temperature, and the saturation magnetization increased up to 87 emu/cc at $800^{\circ}C$. The Faraday rotation increased up to $1.4deg/{\mu}m$ by annealing at $700^{\circ}C$ around the wavelength of $0.5{\mu}m$. The optical transmittance of the Bi:YIG film was also improved in visible region.

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.154-155
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• 2005

Multi-layer film of $MgO/(FePt-B)_{50nm}/ MgO$ was deposited on Si(100) substrates by RF magnetron sputtering. The boron chips were uniformly placed oil tile FePt target. The boron content of thin film was found to be about 5, 10, 15, 25 and $33 at\%$ by using a CAMECA SX-51 wavelength dispersive spectroscopy (WDX). It is observed that X-ray diffraction patterns of FePt-B film by post-annealing exhibited a transformation from disordered fcc structure to ordered $Ll_0$ phase with fct structure from around $400^{\circ}C$. By adding B, annealing temperature for ordering is about $200^{\circ}C$ lower than that of pure FePt. This remarkable decrease of the annealing temperature is closely related to the high diffusivities of Fe and Pt associated with the defects caused by movements of B atoms. The maximum coercivity(Hc) for FePt films was found to be ${\~}$13 kOe after annealing at $600^{\circ}C$ for 1hr.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.64-65
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• 1993

MPB 조성영역인 Zr/Ti=52/48의 composite ceramic target을 사용하여 RF magnetron sputtering 방법으로 기판온도 약 30$0^{\circ}C$에서 RZT 박막을 Pt/Ti/Si 기판위에 증착시켰다. 안정상인 perovskite 구조를 형성시키기 위하여 PbO분위기에서 furnace annealing 과 Repid thermal annealing을 실시하여 열처리 방법에 따른 상형성 및 계면반응과 그에 따른 전기적 특성을 고찰 하였다. Pt 의 두께가 250$\AA$인 경우 furnace annealing 시 $650^{\circ}C$에서 perouskite 상이 형성되었으나 Pt층이 산소의 확산을 방지하지 못하여 상부의 Ti 층이 TiOx로 변태하였으며 하부의 Ti는 Si 과 반응하여 Ti-silicide 롤 변태하였다. 또한 75$0^{\circ}C$,60sec 인 경우 Pt 층의 응집화가 관찰되어 하부전극으로서 적용이 적절하지 못하다. 급속열처리를 실시한 경우에도 마찬가지로 Ti 층이 TiOx 와 silicide 층으로 변태되었다. Pt의 두께가 1000$\AA$인 경우에도 250$\AA$와는 달리 RTA 시 (III)방향으로 Furace annealing 시(001)방향으로 우선 성장하였다. 이는 Ti(001), P(111),PZT(111)면의 lattic mismatch 가 매우 작은데다 RTA 시 계면반응이 거의발생하지 않아 PZT 박막이 (111) 방향으로 우선 성장한 것으로 보인다. Furnace annealing 경우는 심한 계면반응이 발생하여 Pt층에 어느 정도 영향을 주었기 때문에 우선성장 방향이 바뀌었다구 생각한다.